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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFB40N110Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfb40n110q3-datasheets-3846.pdf | TO-264-3, TO-264AA | 20 Weeks | 40A | 1100V | 1560W Tc | N-Channel | 14000pF @ 25V | 260m Ω @ 20A, 10V | 6.5V @ 8mA | 40A Tc | 300nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV16N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh16n80p-datasheets-7014.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 32ns | 29 ns | 75 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 0.6Ohm | 1000 mJ | 800V | N-Channel | 4600pF @ 25V | 600m Ω @ 500mA, 10V | 5V @ 4mA | 16A Tc | 71nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FCH47N60-F133 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fch47n60f133-datasheets-9724.pdf | 13 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | NO | 150°C | FET General Purpose Power | Single | N-CHANNEL | 417W | METAL-OXIDE SEMICONDUCTOR | 47A | 58mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKC20N60C | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkc20n60c-datasheets-3872.pdf | ISOPLUS220™ | 3 | 75 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | 5ns | 4.5 ns | 67 ns | 15A | 20V | SILICON | ISOLATED | SWITCHING | 14A | 0.19Ohm | 690 mJ | 600V | N-Channel | 2400pF @ 25V | 190m Ω @ 16A, 10V | 3.9V @ 1mA | 15A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| R6515KNJTL | ROHM Semiconductor | $8.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6515knjtl-datasheets-3417.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 184W Tc | 15A | 45A | 0.315Ohm | 310 mJ | N-Channel | 1050pF @ 25V | 315m Ω @ 6.5A, 10V | 5V @ 430μA | 15A Tc | 27.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| APT11F80B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt11f80b-datasheets-3873.pdf | 800V | 11A | TO-247-3 | Lead Free | 3 | 35 Weeks | yes | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 1 | R-PSFM-T3 | 14 ns | 20ns | 18 ns | 61 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 337W Tc | TO-247AD | 46A | 1Ohm | 524 mJ | N-Channel | 2471pF @ 25V | 900m Ω @ 6A, 10V | 5V @ 1mA | 12A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| SIHA30N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha30n60aelge3-datasheets-3857.pdf | TO-220-3 Full Pack | 44 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2565pF @ 100V | 120mOhm @ 15A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R045P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r045p7atma1-datasheets-3858.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 600V | 201W Tc | N-Channel | 3891pF @ 400V | 45m Ω @ 22.5A, 10V | 4V @ 1.08mA | 61A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N60P3-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 600V | 1.04kW Tc | N-Channel | 6300pF @ 25V | 145m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV60N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 60A | 300V | N-Channel | 60A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP16N60P3 | IXYS | $5.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa16n60p3-datasheets-3792.pdf | TO-220-3 | 3 | 26 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 347W Tc | TO-220AB | 40A | 0.44Ohm | 800 mJ | N-Channel | 1830pF @ 25V | 470m Ω @ 500mA, 10V | 5V @ 1.5mA | 16A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTV72N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 72A | 300V | N-Channel | 72A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ26N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixth26n60p-datasheets-3794.pdf | 600V | 26A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 250μA | 26A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| NTHL050N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nthl050n65s3hf-datasheets-3863.pdf | TO-247-3 | 15 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 378W Tc | N-Channel | 5017pF @ 400V | 50m Ω @ 29A, 10V | 5V @ 1.7mA | 58A Tc | 125nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV96N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtv96n25t-datasheets-3866.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | 22ns | 28 ns | 59 ns | 96A | 30V | SILICON | DRAIN | SWITCHING | 625W Tc | 250A | 0.029Ohm | 2000 mJ | 250V | N-Channel | 6100pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 96A Tc | 114nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTT110N10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt110n10p-datasheets-3867.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 480W Tc | 250A | 0.015Ohm | 1000 mJ | N-Channel | 3550pF @ 25V | 15m Ω @ 500mA, 10V | 5V @ 250μA | 110A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTQ120N15P | IXYS | $4.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt120n15p-datasheets-7098.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 42ns | 26 ns | 85 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 260A | 0.016Ohm | 2000 mJ | 150V | N-Channel | 4900pF @ 25V | 16m Ω @ 500mA, 10V | 5V @ 250μA | 120A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTV98N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 98A | 200V | N-Channel | 98A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT74N20P | IXYS | $26.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt74n20p-datasheets-3845.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 34MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 21ns | 21 ns | 60 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 200A | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 34m Ω @ 37A, 10V | 5V @ 250μA | 74A Tc | 107nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFH30N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixfh30n50p-datasheets-3825.pdf | 500V | 30A | TO-247-3 | Lead Free | 3 | 24 Weeks | No SVHC | 200MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 460W | 1 | 24ns | 24 ns | 82 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 5V | 460W Tc | TO-247AD | 75A | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFH30N60X | IXYS | $31.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfq30n60x-datasheets-3713.pdf | TO-247-3 | 19 Weeks | 30A | 600V | 500W Tc | N-Channel | 2270pF @ 25V | 155m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT52N30P | IXYS | $35.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt52n30p-datasheets-3827.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 400W | 1 | FET General Purpose Power | R-PSSO-G2 | 22ns | 20 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 0.066Ohm | 300V | N-Channel | 3490pF @ 25V | 66m Ω @ 500mA, 10V | 5V @ 250μA | 52A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTH48N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth48n20-datasheets-3828.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 275W | 1 | Not Qualified | 19ns | 17 ns | 79 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 275W Tc | TO-247AD | 192A | 0.05Ohm | 1000 mJ | 200V | N-Channel | 3000pF @ 25V | 50m Ω @ 15A, 10V | 4V @ 250μA | 48A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA140P05T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp140p05t-datasheets-1699.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 298W | 1 | Other Transistors | R-PSSO-G2 | 140A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 298W Tc | 420A | 0.009Ohm | P-Channel | 13500pF @ 25V | 9m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 200nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||
| IXTV120N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 120A | 150V | N-Channel | 120A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX24N100Q3 | IXYS | $27.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk24n100q3-datasheets-1553.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | 3 | Single | 1kW | 1 | FET General Purpose Power | R-PSIP-T3 | 38 ns | 300ns | 45 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1000W Tc | 60A | 0.44Ohm | 2000 mJ | 1kV | N-Channel | 7200pF @ 25V | 440m Ω @ 12A, 10V | 6.5V @ 4mA | 24A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IPP60R074C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r074c6xksa1-datasheets-3834.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | 11 ns | 7ns | 4 ns | 56 ns | 57.7A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 480.8W Tc | TO-220AB | 0.074Ohm | 923 mJ | N-Channel | 3020pF @ 100V | 74m Ω @ 21A, 10V | 3.5V @ 1.4mA | 57.7A Tc | 138nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFH110N15T2 | IXYS | $2.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh110n15t2-datasheets-3838.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-T3 | 16ns | 18 ns | 33 ns | 110A | SILICON | DRAIN | SWITCHING | 150V | 150V | 480W Tc | TO-247AD | 300A | 0.013Ohm | 800 mJ | N-Channel | 8600pF @ 25V | 13m Ω @ 500mA, 10V | 4.5V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFB100N50Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfb100n50q3-datasheets-3839.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 20 Weeks | 49MOhm | 264 | EAR99 | No | 3 | Single | 1.56kW | 1 | FET General Purpose Power | R-PSIP-T3 | 40 ns | 250ns | 50 ns | 100A | 30V | SILICON | DRAIN | SWITCHING | 1560W Tc | 300A | 5000 mJ | 500V | N-Channel | 13800pF @ 25V | 49m Ω @ 50A, 10V | 6.5V @ 8mA | 100A Tc | 255nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTQ140N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq140n10p-datasheets-3842.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 11MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 600W | 1 | FET General Purpose Powers | 50ns | 26 ns | 85 ns | 140A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 2500 mJ | 100V | N-Channel | 4700pF @ 25V | 11m Ω @ 70A, 10V | 5V @ 250μA | 140A Tc | 155nC @ 10V | 10V | ±20V |
