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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFK55N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | 500V | 55A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 90MOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 560W | 1 | FET General Purpose Power | 60ns | 45 ns | 120 ns | 55A | 20V | SILICON | DRAIN | SWITCHING | 625W Tc | 220A | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 55A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFK220N20X3 | IXYS | $16.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft220n20x3hv-datasheets-2115.pdf | TO-264-3, TO-264AA | 19 Weeks | 200V | 960W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 220A Tc | 204nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX48N60Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n60q3-datasheets-3687.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1kW | 1 | FET General Purpose Power | R-PSIP-T3 | 37 ns | 300ns | 40 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 120A | 0.14Ohm | 2000 mJ | 600V | N-Channel | 7020pF @ 25V | 140m Ω @ 24A, 10V | 6.5V @ 4mA | 48A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFX32N100Q3 | IXYS | $112.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n100q3-datasheets-1617.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 20 Weeks | 247 | EAR99 | 3 | Single | 1.25kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 45 ns | 250ns | 54 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1250W Tc | 96A | 0.32Ohm | 1kV | N-Channel | 9940pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 8mA | 32A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| APT8024B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 800V | 31A | TO-247-3 Variant | Lead Free | 3 | 3 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 565W | 1 | 9 ns | 5ns | 4 ns | 23 ns | 31A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 565W Tc | 0.24Ohm | 2500 mJ | N-Channel | 4670pF @ 25V | 240m Ω @ 15.5A, 10V | 5V @ 2.5mA | 31A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHG73N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60aelge3-datasheets-3694.pdf | TO-247-3 | TO-247AC | 600V | 520W Tc | N-Channel | 6709pF @ 100V | 42mOhm @ 36.5A, 10V | 4V @ 250μA | 69A Tc | 342nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT140N20X3HV | IXYS | $12.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh140n20x3-datasheets-4865.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 200V | 520W Tc | N-Channel | 7660pF @ 25V | 9.6m Ω @ 70A, 10V | 4.5V @ 4mA | 140A Tc | 127nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH04N300P3HV | IXYS | $32.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixth04n300p3hv-datasheets-3649.pdf | TO-247-3 Variant | 17 Weeks | 400mA | 3000V | 104W Tc | N-Channel | 283pF @ 25V | 190 Ω @ 200mA, 10V | 4V @ 250μA | 400mA Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT6N100F | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n100f-datasheets-9071.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 10 Weeks | 3 | yes | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | R-PSSO-G2 | 8.6ns | 8.3 ns | 31 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 700 mJ | 1kV | N-Channel | 1770pF @ 25V | 1.9 Ω @ 3A, 10V | 5.5V @ 2.5mA | 6A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFR15N100Q3 | IXYS | $17.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr15n100q3-datasheets-3652.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | unknown | 3 | Single | 400W | 1 | FET General Purpose Power | R-PSIP-T3 | 28 ns | 250ns | 30 ns | 10A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 400W Tc | 45A | 1000 mJ | 1kV | N-Channel | 3250pF @ 25V | 1.2 Ω @ 7.5A, 10V | 6.5V @ 4mA | 10A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTX110N20L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx110n20l2-datasheets-3655.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 200V | 200V | 960W Tc | 275A | 0.024Ohm | 5000 mJ | N-Channel | 23000pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 110A Tc | 500nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTX20N150 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtx20n150-datasheets-3657.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | AVALANCHE RATED | unknown | SINGLE | 1 | FET General Purpose Power | R-PSIP-T3 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 1250W Tc | 50A | 1Ohm | 2500 mJ | N-Channel | 7800pF @ 25V | 1 Ω @ 10A, 10V | 4.5V @ 1mA | 20A Tc | 215nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFR44N50Q3 | IXYS | $21.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfr44n50q3-datasheets-3659.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | unknown | 3 | Single | 300W | 1 | FET General Purpose Power | R-PSIP-T3 | 30 ns | 250ns | 37 ns | 25A | 30V | SILICON | ISOLATED | SWITCHING | 300W Tc | 130A | 0.154Ohm | 1500 mJ | 500V | N-Channel | 4800pF @ 25V | 154m Ω @ 22A, 10V | 6.5V @ 4mA | 25A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTT60N20L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt60n20l2-datasheets-3662.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 200V | 200V | 540W Tc | 150A | 0.045Ohm | 2000 mJ | N-Channel | 10500pF @ 25V | 45m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTT30N50L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt30n50l2-datasheets-3664.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 2.5V | 400W Tc | 60A | 0.2Ohm | 1500 mJ | N-Channel | 8100pF @ 25V | 2.5 V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFK80N50Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n50q3-datasheets-3668.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 30 ns | 250ns | 43 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 240A | 0.065Ohm | 500V | N-Channel | 10000pF @ 25V | 65m Ω @ 40A, 10V | 6.5V @ 8mA | 80A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTT4N150HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtt4n150hv-datasheets-3671.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | 4A | 1500V | 280W Tc | N-Channel | 1576pF @ 25V | 6 Ω @ 500mA, 10V | 5V @ 250μA | 4A Tc | 44.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX150N30P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/ixys-ixfx150n30p3-datasheets-3641.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 30 Weeks | 247 | Single | 44 ns | 74 ns | 150A | 20V | 300V | 1300W Tc | N-Channel | 12100pF @ 25V | 19m Ω @ 75A, 10V | 5V @ 8mA | 150A Tc | 197nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTT360N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt360n055t2-datasheets-3643.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 360A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 935W Tc | 900A | 0.0024Ohm | 960 mJ | N-Channel | 20000pF @ 25V | 2.4m Ω @ 100A, 10V | 4V @ 250μA | 360A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SIHG47N60AEL-GE3 | Vishay Siliconix | $8.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg47n60aelge3-datasheets-3645.pdf | TO-247-3 | TO-247AC | 600V | 379W Tc | N-Channel | 4600pF @ 100V | 65mOhm @ 23.5A, 10V | 4V @ 250μA | 47A Tc | 222nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT24M120B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt24m120b2-datasheets-3646.pdf | 1.2kV | 24A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | 45 ns | 27ns | 42 ns | 145 ns | 24A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1040W Tc | 90A | N-Channel | 8370pF @ 25V | 630m Ω @ 12A, 10V | 5V @ 2.5mA | 24A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTT75N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtt75n10l2-datasheets-3647.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 75A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | AMPLIFIER | 100V | 100V | 400W Tc | 225A | 0.021Ohm | 2500 mJ | N-Channel | 8100pF @ 25V | 21m Ω @ 500mA, 10V | 4.5V @ 250μA | 75A Tc | 215nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFT50N50P3 | IXYS | $9.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixft50n50p3-datasheets-9577.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 26 Weeks | 3 | unknown | e3 | Matte Tin (Sn) | Single | 25 ns | 53 ns | 50A | 30V | 500V | 960W Tc | N-Channel | 4335pF @ 25V | 120m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFP60N25X3M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp60n25x3m-datasheets-3602.pdf | TO-220-3 | 19 Weeks | yes | 250V | 36W Tc | N-Channel | 3610pF @ 25V | 23m Ω @ 30A, 10V | 4.5V @ 1.5mA | 60A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT88N30P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq88n30p-datasheets-2251.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 600W | 1 | R-PSSO-G2 | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 220A | 0.04Ohm | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 250μA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| STB24N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb24n60m6-datasheets-3106.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | STB24N | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 17A | 52.5A | 0.19Ohm | 250 mJ | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||
| R6524ENJTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6524enjtl-datasheets-3579.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 245W Tc | 24A | 72A | 0.185Ohm | 654 mJ | N-Channel | 1650pF @ 25V | 185m Ω @ 11.3A, 10V | 4V @ 750μA | 24A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTA3N120HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta3n120hv-datasheets-3615.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | 3A | 1200V | 200W Tc | N-Channel | 1100pF @ 25V | 4.5 Ω @ 500mA, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK60S7DPP-E0#T2 | Renesas Electronics America | $14.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk60s7dppe0t2-datasheets-3618.pdf | TO-220-3 Full Pack | Lead Free | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Power | 27 ns | 28ns | 9 ns | 55 ns | 30A | 30V | Single | 600V | 34.7W Tc | N-Channel | 2300pF @ 25V | 125m Ω @ 15A, 10V | 30A Tc | 39nC @ 10V | Super Junction | 10V | +30V, -20V | |||||||||||||||||||||||||||||||||||||||||||
| R8008ANJFRGTL | ROHM Semiconductor | $4.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r8008anjfrgtl-datasheets-3401.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 23 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 195W Tc | 8A | 32A | 4.2 mJ | N-Channel | 1100pF @ 25V | 1.03 Ω @ 4A, 10V | 5V @ 1mA | 8A Tc | 38nC @ 10V | 10V | ±30V |
