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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT40SM120J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40sm120j-datasheets-3782.pdf | SOT-227-4, miniBLOC | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | UPPER | UNSPECIFIED | 1 | R-PUFM-X4 | 32A | SILICON CARBIDE | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 1200V | 165W Tc | 99A | 0.1Ohm | N-Channel | 2560pF @ 1000V | 100m Ω @ 20A, 20V | 3V @ 1mA (Typ) | 32A Tc | 130nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||
| IXTX8N150L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtk8n150l-datasheets-3766.pdf | TO-247-3 | Lead Free | 3 | 24 Weeks | 3 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 8A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 700W Tc | 8A | 20A | N-Channel | 8000pF @ 25V | 3.6 Ω @ 4A, 20V | 8V @ 250μA | 8A Tc | 250nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||||||
| IXFT140N10P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 1 Weeks | 100V | 600W Tc | N-Channel | 4700pF @ 25V | 11m Ω @ 70A, 10V | 5V @ 4mA | 140A Tc | 155nC @ 10V | 10V 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R070C6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK53S60 | Alpha & Omega Semiconductor Inc. | $1.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 16 Weeks | 53A | 600V | 520W Tc | N-Channel | 3034pF @ 100V | 70m Ω @ 26.5A, 10V | 3.8V @ 250μA | 53A Tc | 59nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA16N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa16n60p3-datasheets-3792.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 347W Tc | 40A | 0.44Ohm | 800 mJ | N-Channel | 1830pF @ 25V | 440m Ω @ 8A, 10V | 5V @ 1.5mA | 16A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT21M100J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt21m100j-datasheets-3756.pdf | 1kV | 21A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | 39 ns | 35ns | 33 ns | 130 ns | 21A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 462W Tc | 0.38Ohm | N-Channel | 8500pF @ 25V | 380m Ω @ 16A, 10V | 5V @ 2.5mA | 21A Tc | 260nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STB34N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sti34n65m5-datasheets-9735.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 17 Weeks | 110MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | STB34N | Single | 190W | 1 | R-PSSO-G2 | 59 ns | 59 ns | 28A | 25V | SILICON | SWITCHING | 190W Tc | 650V | N-Channel | 2700pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 62.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| IXFL132N50P3 | IXYS | $28.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfl132n50p3-datasheets-3725.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.31mm | 3 | 26 Weeks | 264 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | 44 ns | 72 ns | 63A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 520W Tc | 330A | 0.043Ohm | 3000 mJ | N-Channel | 18600pF @ 25V | 43m Ω @ 66A, 10V | 5V @ 8mA | 63A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFK64N50Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk64n50q3-datasheets-3727.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1kW | 1 | FET General Purpose Power | 36 ns | 250ns | 46 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 160A | 0.085Ohm | 4000 mJ | 500V | N-Channel | 6950pF @ 25V | 85m Ω @ 32A, 10V | 6.5V @ 4mA | 64A Tc | 145nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFR32N80Q3 | IXYS | $34.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfr32n80q3-datasheets-3730.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 500W | 1 | FET General Purpose Power | R-PSIP-T3 | 38 ns | 300ns | 45 ns | 24A | 30V | SILICON | ISOLATED | SWITCHING | 500W Tc | 84A | 0.3Ohm | 3000 mJ | 800V | N-Channel | 6940pF @ 25V | 300m Ω @ 16A, 10V | 6.5V @ 4mA | 24A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| STB12NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb12nm60n-datasheets-3049.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB12N | 3 | Single | 40 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 9ns | 10 ns | 60 ns | 10A | 25V | SILICON | SWITCHING | 90W Tc | 40A | 200 mJ | 600V | N-Channel | 960pF @ 50V | 410m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 30.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| IXTT110N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtt110n10l2-datasheets-3734.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130ns | 24 ns | 99 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 300A | 3000 mJ | 100V | N-Channel | 10500pF @ 25V | 18m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFN94N50P2 | IXYS | $26.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Chassis, Stud | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfn94n50p2-datasheets-3736.pdf | SOT-227-4, miniBLOC | 30 Weeks | compliant | 68A | 500V | 780W Tc | N-Channel | 13700pF @ 25V | 55m Ω @ 500mA, 10V | 5V @ 8mA | 68A Tc | 220nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK32N80Q3 | IXYS | $22.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n80q3-datasheets-3738.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1kW | 1 | FET General Purpose Power | 38 ns | 300ns | 45 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 80A | 0.27Ohm | 800V | N-Channel | 6940pF @ 25V | 270m Ω @ 16A, 10V | 6.5V @ 4mA | 32A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APT30F60J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30f60j-datasheets-3741.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | 4 | 22 Weeks | 30.000004g | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 355W | 1 | 48 ns | 55ns | 44 ns | 145 ns | 31A | 30V | SILICON | ISOLATED | SWITCHING | 355W Tc | 600V | N-Channel | 8590pF @ 25V | 150m Ω @ 21A, 10V | 5V @ 2.5mA | 31A Tc | 215nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| APT47M60J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt47m60j-datasheets-3746.pdf | 600V | 47A | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 540W | 1 | 75 ns | 85ns | 70 ns | 225 ns | 49A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 540W Tc | 0.09Ohm | N-Channel | 13190pF @ 25V | 90m Ω @ 33A, 10V | 5V @ 2.5mA | 49A Tc | 330nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTQ60N20L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt60n20l2-datasheets-3662.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 90 ns | 60A | SILICON | DRAIN | AMPLIFIER | 540W Tc | 150A | 0.045Ohm | 2000 mJ | 200V | N-Channel | 10500pF @ 25V | 45m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 255nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFN44N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n100p-datasheets-3750.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 220MOhm | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 68ns | 54 ns | 90 ns | 37A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 890W Tc | 110A | 2000 mJ | 1kV | N-Channel | 19000pF @ 25V | 220m Ω @ 22A, 10V | 6.5V @ 1mA | 37A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFN210N30P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfn210n30p3-datasheets-3752.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 30 Weeks | 4 | Single | 1.5kW | FET General Purpose Power | 46 ns | 25ns | 13 ns | 94 ns | 192A | 20V | 1500W Tc | 300V | N-Channel | 16200pF @ 25V | 14.5m Ω @ 105A, 10V | 5V @ 8mA | 192A Tc | 268nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTH1N450HV | IXYS | $35.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n450hv-datasheets-9122.pdf | TO-247-3 Variant | 24 Weeks | 1A | 4500V | 520W Tc | N-Channel | 1700pF @ 25V | 80 Ω @ 50mA, 10V | 6V @ 250μA | 1A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT15N100Q3 | IXYS | $15.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n100q3-datasheets-1455.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 690W | 1 | FET General Purpose Power | R-PSSO-G2 | 28 ns | 250ns | 30 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 690W Tc | 45A | 1000 mJ | 1kV | N-Channel | 3250pF @ 25V | 1.05 Ω @ 7.5A, 10V | 6.5V @ 4mA | 15A Tc | 64nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFK55N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | 500V | 55A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 90MOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 560W | 1 | FET General Purpose Power | 60ns | 45 ns | 120 ns | 55A | 20V | SILICON | DRAIN | SWITCHING | 625W Tc | 220A | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 55A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFK220N20X3 | IXYS | $16.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft220n20x3hv-datasheets-2115.pdf | TO-264-3, TO-264AA | 19 Weeks | 200V | 960W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 220A Tc | 204nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX48N60Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n60q3-datasheets-3687.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1kW | 1 | FET General Purpose Power | R-PSIP-T3 | 37 ns | 300ns | 40 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 120A | 0.14Ohm | 2000 mJ | 600V | N-Channel | 7020pF @ 25V | 140m Ω @ 24A, 10V | 6.5V @ 4mA | 48A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFX32N100Q3 | IXYS | $112.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n100q3-datasheets-1617.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 20 Weeks | 247 | EAR99 | 3 | Single | 1.25kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 45 ns | 250ns | 54 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1250W Tc | 96A | 0.32Ohm | 1kV | N-Channel | 9940pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 8mA | 32A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| APT8024B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 800V | 31A | TO-247-3 Variant | Lead Free | 3 | 3 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 565W | 1 | 9 ns | 5ns | 4 ns | 23 ns | 31A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 565W Tc | 0.24Ohm | 2500 mJ | N-Channel | 4670pF @ 25V | 240m Ω @ 15.5A, 10V | 5V @ 2.5mA | 31A Tc | 160nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHG73N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60aelge3-datasheets-3694.pdf | TO-247-3 | TO-247AC | 600V | 520W Tc | N-Channel | 6709pF @ 100V | 42mOhm @ 36.5A, 10V | 4V @ 250μA | 69A Tc | 342nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT140N20X3HV | IXYS | $12.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh140n20x3-datasheets-4865.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 200V | 520W Tc | N-Channel | 7660pF @ 25V | 9.6m Ω @ 70A, 10V | 4.5V @ 4mA | 140A Tc | 127nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK140N30P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | TO-264-3, TO-264AA | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.04kW | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 140A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 0.024Ohm | 5000 mJ | N-Channel | 14800pF @ 25V | 24m Ω @ 70A, 10V | 5V @ 500μA | 140A Tc | 185nC @ 10V | 10V | ±20V |
