Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFH30N60X | IXYS | $31.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfq30n60x-datasheets-3713.pdf | TO-247-3 | 19 Weeks | 30A | 600V | 500W Tc | N-Channel | 2270pF @ 25V | 155m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75852G3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75852g3-datasheets-3804.pdf | 150V | 74A | TO-247-3 | Lead Free | 3 | 10 Weeks | 16MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 75A | e3 | Tin (Sn) | 150V | Single | 500W | 1 | FET General Purpose Power | 22 ns | 151ns | 107 ns | 82 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 150V | N-Channel | 7690pF @ 25V | 16m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 480nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||
| PCFQ5P10W | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tray | 3 (168 Hours) | RoHS Compliant | Die | 4 Weeks | Die | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW80R290C3AXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw80r290c3axksa1-datasheets-3812.pdf | TO-247-3 | 18 Weeks | 800V | 227W Tc | N-Channel | 2300pF @ 100V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 117nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N150HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1500V | 250W Tc | N-Channel | 1375pF @ 25V | 7.3 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 38.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKH24N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkh24n60c5-datasheets-3813.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 32 Weeks | 165MOhm | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 24A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 24A Tc | 52nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPW80R290C3AFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH52P10P | IXYS | $7.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta52p10p-datasheets-2191.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 50MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 29ns | 22 ns | 38 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | 130A | 1500 mJ | -100V | P-Channel | 2845pF @ 25V | 50m Ω @ 500mA, 10V | 4.5V @ 250μA | 52A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFA8N85XHV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfa8n85xhv-datasheets-3817.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 850V | 200W Tc | N-Channel | 654pF @ 25V | 850m Ω @ 4A, 10V | 5.5V @ 250μA | 8A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH32N65X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth32n65x-datasheets-3818.pdf | TO-247-3 | 15 Weeks | 32A | 650V | 500W Tc | N-Channel | 2205pF @ 25V | 135m Ω @ 16A, 10V | 5.5V @ 250μA | 32A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5010JVRU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010jvru2-datasheets-3819.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 16 Weeks | 30.000004g | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 450W | 1 | FET General Purpose Power | 18 ns | 16ns | 5 ns | 54 ns | 44A | 30V | SILICON | ISOLATED | SWITCHING | 450W Tc | 2500 mJ | 500V | N-Channel | 7410pF @ 25V | 100m Ω @ 22A, 10V | 4V @ 2.5mA | 44A Tc | 312nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IPC65R070C6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP18N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp18n60x-datasheets-3822.pdf | TO-220-3 | 19 Weeks | 18A | 600V | 320W Tc | N-Channel | 1440pF @ 25V | 230m Ω @ 9A, 10V | 4.5V @ 1.5mA | 18A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT64N25P | IXYS | $44.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt64n25p-datasheets-3795.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 400W | 1 | R-PSSO-G2 | 23ns | 20 ns | 60 ns | 64A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 0.049Ohm | 250V | N-Channel | 3450pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 250μA | 64A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTH30N50P | IXYS | $7.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50p-datasheets-3823.pdf | 500V | 30A | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | TO-247AD | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFH22N60P | IXYS | $7.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh22n60p-datasheets-3796.pdf | 600V | 22A | TO-247-3 | 25.96mm | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 150°C | 20 ns | 20ns | 23 ns | 60 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 400W Tc | TO-247AD | 66A | 600V | N-Channel | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5.5V @ 4mA | 22A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXTT96N15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt96n15p-datasheets-3824.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 33ns | 18 ns | 66 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.024Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 250μA | 96A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA90N20X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12m Ω @ 45A, 10V | 4.5V @ 250μA | 90A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH72N30T | IXYS | $6.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 72A | 300V | N-Channel | 72A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH2N300P3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtt2n300p3hv-datasheets-2202.pdf | TO-247-3 Variant | 24 Weeks | 3000V | 520W Tc | N-Channel | 1890pF @ 25V | 21 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX27N80Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfk27n80q-datasheets-7167.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 28ns | 13 ns | 50 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFQ34N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfq34n50p3-datasheets-3778.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 26 Weeks | 3 | Single | 23 ns | 40 ns | 34A | 30V | 500V | 695W Tc | N-Channel | 3260pF @ 25V | 170m Ω @ 17A, 10V | 5V @ 4mA | 34A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK17N120L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtk17n120l-datasheets-3780.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 24 Weeks | 900MOhm | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 39ns | 63 ns | 75 ns | 17A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 700W Tc | 2500 mJ | 1.2kV | N-Channel | 8300pF @ 25V | 900m Ω @ 8.5A, 20V | 5V @ 250μA | 17A Tc | 155nC @ 15V | 20V | ±30V | |||||||||||||||||||||||||||
| APT40SM120J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40sm120j-datasheets-3782.pdf | SOT-227-4, miniBLOC | 4 | 22 Weeks | EAR99 | UL RECOGNIZED | UPPER | UNSPECIFIED | 1 | R-PUFM-X4 | 32A | SILICON CARBIDE | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 1200V | 165W Tc | 99A | 0.1Ohm | N-Channel | 2560pF @ 1000V | 100m Ω @ 20A, 20V | 3V @ 1mA (Typ) | 32A Tc | 130nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTX8N150L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtk8n150l-datasheets-3766.pdf | TO-247-3 | Lead Free | 3 | 24 Weeks | 3 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 8A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 700W Tc | 8A | 20A | N-Channel | 8000pF @ 25V | 3.6 Ω @ 4A, 20V | 8V @ 250μA | 8A Tc | 250nC @ 15V | 20V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFT140N10P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 1 Weeks | 100V | 600W Tc | N-Channel | 4700pF @ 25V | 11m Ω @ 70A, 10V | 5V @ 4mA | 140A Tc | 155nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R070C6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK53S60 | Alpha & Omega Semiconductor Inc. | $1.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 16 Weeks | 53A | 600V | 520W Tc | N-Channel | 3034pF @ 100V | 70m Ω @ 26.5A, 10V | 3.8V @ 250μA | 53A Tc | 59nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA16N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa16n60p3-datasheets-3792.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 347W Tc | 40A | 0.44Ohm | 800 mJ | N-Channel | 1830pF @ 25V | 440m Ω @ 8A, 10V | 5V @ 1.5mA | 16A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IPB60R055CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r055cfd7atma1-datasheets-3793.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 178W Tc | 38A | 153A | 0.055Ohm | 180 mJ | N-Channel | 3194pF @ 400V | 55m Ω @ 18A, 10V | 4.5V @ 900μA | 38A Tc | 79nC @ 10V | 10V | ±20V |
