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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHB22N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EL | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60aelge3-datasheets-3379.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263) | 600V | 208W Tc | N-Channel | 1757pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60AEL-GE3 | Vishay Siliconix | $4.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60aelge3-datasheets-3407.pdf | TO-247-3 | TO-247AC | 600V | 208W Tc | N-Channel | 1757pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6515ENJTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6515enjtl-datasheets-3408.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 184W Tc | 15A | 45A | 0.315Ohm | 310 mJ | N-Channel | 910pF @ 25V | 315m Ω @ 6.5A, 10V | 4V @ 430μA | 15A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA110N12T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | /files/ixys-ixta110n12t2-datasheets-3419.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | 120V | 517W Tc | N-Channel | 6570pF @ 25V | 14m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH11N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh11n65et1ge3-datasheets-3399.pdf | 8-PowerTDFN | 18 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 12A | 650V | 130W Tc | N-Channel | 1257pF @ 100V | 363m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5H600NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ntmfs5h600nlt1g-datasheets-3412.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.3W Ta 160W Tc | N-Channel | 6680pF @ 30V | 1.3m Ω @ 50A, 10V | 2V @ 250μA | 35A Ta 250A Tc | 89nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA36P15P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixta36p15ptrl-datasheets-9545.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | 150V | 300W Tc | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL26N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl26n60dm6-datasheets-2880.pdf | 8-PowerVDFN | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 110W Tc | N-Channel | 940pF @ 100V | 215m Ω @ 7.5A, 10V | 4.75V @ 250μA | 15A Tc | 24nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH185N10F3-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F3 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth185n10f32-datasheets-3460.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15.8mm | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STH185 | Single | NOT SPECIFIED | FET General Purpose Power | 25.6 ns | 99.9 ns | 180A | 100V | 315W Tc | N-Channel | 6665pF @ 25V | 4.5m Ω @ 60A, 10V | 4V @ 250μA | 180A Tc | 114.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ450P2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth450p2-datasheets-0479.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 35A | 0.33Ohm | 750 mJ | 500V | N-Channel | 2530pF @ 25V | 330m Ω @ 8A, 10V | 4.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| FDB082N15A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb082n15a-datasheets-3451.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.31247g | 8.2MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | GULL WING | Single | 231W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 58ns | 26 ns | 61 ns | 105A | 20V | SILICON | DRAIN | SWITCHING | 294W Tc | 420A | 542 mJ | 150V | N-Channel | 6040pF @ 25V | 8.2m Ω @ 75A, 10V | 4V @ 250μA | 117A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHH14N65EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh14n65eft1ge3-datasheets-3508.pdf | 8-PowerTDFN | 4 | 21 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 156W Tc | 36A | 0.271Ohm | 226 mJ | N-Channel | 1749pF @ 100V | 271m Ω @ 7A, 10V | 4V @ 250μA | 15A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA460P2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtq460p2-datasheets-2745.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 480W Tc | 50A | 0.27Ohm | 750 mJ | N-Channel | 2890pF @ 25V | 270m Ω @ 12A, 10V | 4.5V @ 250μA | 24A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| R6015ENJTL | ROHM Semiconductor | $3.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | No SVHC | 83 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 40W Tc | 30A | 0.29Ohm | 284 mJ | N-Channel | 910pF @ 25V | 290m Ω @ 6.5A, 10V | 4V @ 1mA | 15A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQM40014EM_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40014emge3-datasheets-2848.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 14 Weeks | TO-263-7 | 40V | 375W Tc | 840μOhm | N-Channel | 15525pF @ 25V | 1mOhm @ 35A, 10V | 3.5V @ 250μA | 200A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA50N20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta50n20p-datasheets-3223.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 35ns | 30 ns | 70 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 120A | 0.06Ohm | 1000 mJ | 200V | N-Channel | 2720pF @ 25V | 60m Ω @ 50A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFQ20N50P3 | IXYS | $4.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 10 ns | 43 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 380W Tc | 40A | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 20A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| R6015FNJTL | ROHM Semiconductor | $4.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | SC | 2 | 10 Weeks | 83 | not_compliant | 50W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 1.66nF | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 60A | 0.35Ohm | 15 mJ | 350 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB9NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf9nk90z-datasheets-1937.pdf | 900V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | GULL WING | 245 | STB9N | 3 | Single | 30 | 160W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 13ns | 11 ns | 55 ns | 8A | 30V | SILICON | SWITCHING | 160W Tc | 8A | 220 mJ | 900V | N-Channel | 2115pF @ 25V | 1.3 Ω @ 3.6A, 10V | 4.5V @ 100μA | 8A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| R6024ENJTL | ROHM Semiconductor | $15.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | No SVHC | 83 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 40W Tc | 72A | 0.165Ohm | 497 mJ | N-Channel | 1650pF @ 25V | 165m Ω @ 11.3A, 10V | 4V @ 1mA | 24A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RJ1G12BGNTLL | ROHM Semiconductor | $4.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rj1g12bgntll-datasheets-3255.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 178W Tc | 120A | 240A | 0.00208Ohm | 117 mJ | N-Channel | 12500pF @ 20V | 1.86m Ω @ 50A, 10V | 2.5V @ 2mA | 120A Tc | 165nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA19N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqa19n60-datasheets-3257.pdf | 600V | 18.5A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | 16A | 8541.29.00.95 | e3 | Tin (Sn) | 600V | Single | 300W | 1 | FET General Purpose Power | 65 ns | 210ns | 135 ns | 150 ns | 18.5A | 30V | SILICON | SWITCHING | 5V | 300W Tc | 1150 mJ | 600V | N-Channel | 3600pF @ 25V | 380m Ω @ 9.3A, 10V | 5V @ 250μA | 18.5A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STK22N6F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stk22n6f3-datasheets-3265.pdf | PolarPak® | 4 | No SVHC | 10 | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | MATTE TIN | DUAL | STK22 | 10 | Single | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 16 ns | 14ns | 5 ns | 28 ns | 22A | 20V | SILICON | SOURCE | SWITCHING | 5.2W Tc | 88A | 0.006Ohm | 800 mJ | 60V | N-Channel | 2500pF @ 25V | 4 V | 6m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| RJ1U330AAFRGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohm-rj1u330aafrgtl-datasheets-9523.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5mm | 2 | 16 Weeks | EAR99 | LPT(S) | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 211W | 1 | 150°C | R-PSSO-G2 | 50 ns | 120 ns | 33A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 211W Tc | 74.8 mJ | 250V | N-Channel | 4500pF @ 25V | 105m Ω @ 16.5A, 10V | 5V @ 1mA | 33A Ta | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| STB14NK50ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp14nk50zfp-datasheets-4082.pdf | 500V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 380MOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB14N | 3 | Single | 30 | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 16ns | 12 ns | 54 ns | 6A | 30V | 500V | SILICON | SWITCHING | 3.75V | 150W Tc | 48A | 400 mJ | 500V | N-Channel | 2000pF @ 25V | 3.75 V | 380m Ω @ 6A, 10V | 4.5V @ 100μA | 14A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| FDBL9406-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdbl9406f085-datasheets-2961.pdf | 8-PowerSFN | Lead Free | 22 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | 1 | Single | FET General Purpose Power | 33 ns | 40ns | 23 ns | 47 ns | 240A | 20V | 300W Tj | 40V | N-Channel | 7735pF @ 25V | 1.2m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB190CM2 RNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb190cm2rng-datasheets-3301.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 150.6W Tc | 18A | 54A | 0.19Ohm | 212.9 mJ | N-Channel | 1273pF @ 100V | 190m Ω @ 6A, 10V | 4V @ 250μA | 18A Tc | 31nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB80NF03L-04T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -60°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb80nf03l04t4-datasheets-3078.pdf | 30V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 4mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB80N | 4 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 270ns | 95 ns | 110 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 30V | N-Channel | 5500pF @ 25V | 4m Ω @ 40A, 10V | 1V @ 250μA | 80A Tc | 110nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| R6511ENJTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6511enjtl-datasheets-3152.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 124W Tc | 11A | 33A | 0.4Ohm | 223 mJ | N-Channel | 670pF @ 25V | 400m Ω @ 3.8A, 10V | 4V @ 320μA | 11A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA36N20X3 | IXYS | $4.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy36n20x3-datasheets-3750.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 176W Tc | 36A | 50A | 0.045Ohm | 300 mJ | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V |
