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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTTFS4H07NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nttfs4h07ntwg-datasheets-9943.pdf | 8-PowerWDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 66A | Single | 25V | 2.64W Ta 33.8W Tc | N-Channel | 771pF @ 12V | 4.8m Ω @ 30A, 10V | 2.1V @ 250μA | 18.5A Ta 66A Tc | 12.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK03M4DPA-00#J5A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk03m4dpa00j5a-datasheets-9945.pdf | 8-WFDFN Exposed Pad | 16 Weeks | yes | NOT SPECIFIED | 8 | NOT SPECIFIED | 35A | 30V | 30W Tc | N-Channel | 2170pF @ 10V | 4.6m Ω @ 17.5A, 10V | 35A Ta | 12nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD650P06NMATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 83W Tc | 22A | 88A | 0.065Ohm | 329 mJ | P-Channel | 1600pF @ 30V | 65m Ω @ 22A, 10V | 4V @ 1.04mA | 22A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT1608L | Alpha & Omega Semiconductor Inc. | $5.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 140A | 60V | 2.1W Ta 333W Tc | N-Channel | 3690pF @ 25V | 7.6m Ω @ 20A, 10V | 3.7V @ 250μA | 11A Ta 140A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EKI04027 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-eki04027-datasheets-9961.pdf | TO-220-3 | Lead Free | 12 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 85A | 40V | 135W Tc | N-Channel | 6200pF @ 25V | 3.2m Ω @ 82.5A, 10V | 2.5V @ 1.5mA | 85A Tc | 93.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6H836NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h836nt1g-datasheets-0853.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.7W Ta 89W Tc | N-Channel | 1640pF @ 40V | 6.7m Ω @ 15A, 10V | 4V @ 95μA | 15A Ta 74A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4264 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | yes | unknown | 12A | 60V | 3.1W Ta | N-Channel | 2007pF @ 30V | 11m Ω @ 12A, 10V | 2.5V @ 250μA | 12A Ta | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7290 | Alpha & Omega Semiconductor Inc. | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon7290-datasheets-8753.pdf | 8-PowerWDFN | 16 Weeks | 8 | not_compliant | 83W | 1 | 50A | 20V | 100V | 6.25W Ta 83W Tc | N-Channel | 2075pF @ 50V | 12.6m Ω @ 15A, 10V | 3.4V @ 250μA | 15A Ta 50A Tc | 38nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C430NLWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c430nlaft1g-datasheets-0686.pdf | 8-PowerTDFN, 5 Leads | 40V | 3.8W Ta 110W Tc | N-Channel | 4300pF @ 20V | 1.4m Ω @ 50A, 10V | 2V @ 250μA | 38A Ta 200A Tc | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP042N03LGHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp042n03lghksa1-datasheets-9897.pdf | TO-220-3 | PG-TO220-3-1 | 30V | 79W Tc | N-Channel | 3900pF @ 15V | 4.2mOhm @ 30A, 10V | 2.2V @ 250μA | 70A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ40S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $0.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 4.14nF | 46ns | 150 ns | 40A | 10V | 40V | 68W Tc | P-Channel | 4140pF @ 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 40A Ta | 83nC @ 10V | 9.1 mΩ | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLL024ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirll024ztr-datasheets-9900.pdf | TO-261-4, TO-261AA | 8 Weeks | 4 | EAR99 | No | 1W | 1 | FET General Purpose Power | 8.6 ns | 33ns | 15 ns | 20 ns | 5A | 16V | Single | 55V | 1W Ta | 5A | N-Channel | 380pF @ 25V | 60m Ω @ 3A, 10V | 3V @ 250μA | 5A Ta | 11nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6722MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf6722mtrpbf-datasheets-9984.pdf | DirectFET™ Isometric MP | 6.35mm | 506μm | 5.05mm | 3 | 12 Weeks | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 42W | 1 | R-XBCC-N3 | 11 ns | 7.8ns | 6.1 ns | 9.5 ns | 13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.3W Ta 42W Tc | 0.0077Ohm | 82 mJ | 30V | N-Channel | 1300pF @ 15V | 7.7m Ω @ 13A, 10V | 2.4V @ 50μA | 13A Ta 56A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AUIRF7732S2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf7732s2tr-datasheets-9905.pdf | DirectFET™ Isometric SC | 3 | 16 Weeks | No SVHC | 7 | EAR99 | No | BOTTOM | 41W | 1 | FET General Purpose Power | R-XBCC-N3 | 123ns | 37 ns | 14A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 2.5W Ta 41W Tc | 55A | 220A | 0.00695Ohm | 45 mJ | 40V | N-Channel | 1700pF @ 25V | 6.95m Ω @ 33A, 10V | 4V @ 50μA | 14A Ta | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FCPF600N65S3R0L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcpf600n65s3r0l-datasheets-9917.pdf | TO-220-3 Full Pack | 12 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | 650V | 24W Tc | N-Channel | 465pF @ 400V | 600m Ω @ 3A, 10V | 4.5V @ 600μA | 6A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU80R1K0CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80r1k0ceatma1-datasheets-3432.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 83W Tc | 5.7A | 18A | 0.95Ohm | N-Channel | 785pF @ 100V | 950m Ω @ 3.6A, 10V | 3.9V @ 250μA | 5.7A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPLK80R600P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | MOSFET (Metal Oxide) | 8-PowerTDFN | 18 Weeks | 800V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80N04S306BATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7787TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh7787trpbf-datasheets-9820.pdf | 8-PowerTDFN | 6.15mm | 1.17mm | 5.1mm | Lead Free | 12 Weeks | 8 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 7.3 ns | 16ns | 12 ns | 53 ns | 68A | 20V | 75V | 83W Tc | N-Channel | 4030pF @ 25V | 8m Ω @ 41A, 10V | 3.7V @ 100μA | 68A Tc | 110nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfz46zstrlpbf-datasheets-9839.pdf | 55V | 51A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 13.6MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 82W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 63ns | 39 ns | 37 ns | 51A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 82W Tc | 200A | 97 mJ | 55V | N-Channel | 1460pF @ 25V | 4 V | 13.6m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| TPH4R10ANL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 100V | 2.5W Ta 67W Tc | N-Channel | 6.3nF @ 50V | 4.1m Ω @ 35A, 10V | 2.5V @ 1mA | 92A Ta 70A Tc | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C628NLAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c628nlwfaft3g-datasheets-0372.pdf | 8-PowerTDFN, 5 Leads | 34 Weeks | 60V | 3.7W Ta 110W Tc | N-Channel | 3600pF @ 25V | 2.4m Ω @ 50A, 10V | 2V @ 135μA | 28A Ta 150A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT4002LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmt4002lps13-datasheets-9867.pdf | 8-PowerTDFN | 24 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.3W | N-Channel | 6771pF @ 20V | 1.8m Ω @ 25A, 10V | 3V @ 250μA | 100A Ta | 116.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ037N06LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz037n06ls5atma1-datasheets-9870.pdf | 8-PowerTDFN | 18 Weeks | 60V | 2.1W Ta 69W Tc | N-Channel | 3100pF @ 30V | 3.7m Ω @ 20A, 10V | 2.3V @ 36μA | 18A Ta 40A Tc | 47nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120P04P404ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb120p04p404atma1-datasheets-9880.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 30 ns | 20ns | 52 ns | 49 ns | 120A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 136W Tc | 480A | 78 mJ | P-Channel | 14790pF @ 25V | 3.5m Ω @ 100A, 10V | 4V @ 340μA | 120A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD80N04S306ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipd80n04s306atma1-datasheets-9850.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3.949996g | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSSO-G2 | 90A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 0.0052Ohm | N-Channel | 3250pF @ 25V | 5.2m Ω @ 80A, 10V | 4V @ 52μA | 90A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD65R600E6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd65r600e6atma1-datasheets-9767.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.41mm | 6.22mm | 2 | 12 Weeks | 3 | no | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 63W | 1 | Not Qualified | R-PSSO-G2 | 10 ns | 8ns | 11 ns | 64 ns | 7.3A | 20V | SILICON | DRAIN | SWITCHING | 650V | 63W Tc | 18A | 0.6Ohm | 142 mJ | 700V | N-Channel | 440pF @ 100V | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPB80N04S4L04ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s4l04atma1-datasheets-9772.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 7 ns | 12ns | 31 ns | 22 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 71W Tc | 0.004Ohm | 100 mJ | N-Channel | 4690pF @ 25V | 4m Ω @ 80A, 10V | 2.2V @ 35μA | 80A Tc | 60nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||
| IPB80N04S404ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s404atma1-datasheets-9783.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 12ns | 9 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 71W Tc | 0.0042Ohm | 100 mJ | N-Channel | 3440pF @ 25V | 4.2m Ω @ 80A, 10V | 4V @ 35μA | 80A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRF7647S2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7647s2tr-datasheets-9789.pdf | DirectFET™ Isometric SC | Lead Free | 3 | 16 Weeks | No SVHC | 7 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 41W | 1 | FET General Purpose Power | R-XBCC-N3 | 5.5 ns | 8.4ns | 4.6 ns | 7.9 ns | 5.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | P-CHANNEL | 4V | 2.5W Ta 41W Tc | 24A | 95A | 0.031Ohm | 100V | N-Channel | 910pF @ 25V | 31m Ω @ 14A, 10V | 5V @ 50μA | 5.9A Ta 24A Tc | 21nC @ 10V | 10V | ±20V |
