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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AOW15S65 | Alpha & Omega Semiconductor Inc. | $1.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | TO-262 | 841pF | 15A | 650V | 208W Tc | N-Channel | 841pF @ 100V | 290mOhm @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17.2nC @ 10V | 290 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf5210lpbf-datasheets-8886.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.1W Ta 170W Tc | 38A | 140A | 0.06Ohm | 120 mJ | P-Channel | 2780pF @ 25V | 60m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S208AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp80n06s208aksa2-datasheets-9281.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | SINGLE | 1 | 14 ns | 15ns | 14 ns | 32 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 215W Tc | 0.008Ohm | 450 mJ | N-Channel | 2860pF @ 25V | 8m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N08S405ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd90n08s405atma1-datasheets-9361.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 12 ns | 7ns | 23 ns | 20 ns | 90A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 144W Tc | 240 mJ | N-Channel | 4800pF @ 25V | 5.3m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK160F10N1L,LQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | 175°C | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | AEC-Q101 | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 375W Tc | 160A | 480A | 0.0037Ohm | 466 mJ | N-Channel | 10100pF @ 10V | 2.4m Ω @ 80A, 10V | 3.5V @ 1mA | 160A Ta | 122nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF18N65 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | not_compliant | e3 | Matte Tin (Sn) | 18A | 650V | 50W Tc | N-Channel | 3785pF @ 25V | 390m Ω @ 9A, 10V | 4.5V @ 250μA | 18A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP190N65S3R0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fcp190n65s3r0-datasheets-9372.pdf | TO-220-3 | 12 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 144W Tc | N-Channel | 1350pF @ 400V | 190m Ω @ 8.5A, 10V | 4.5V @ 1.7mA | 17A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4890DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4890dyt1e3-datasheets-9379.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 13 ns | 8.5ns | 17 ns | 35 ns | 11A | 25V | SILICON | SWITCHING | 2.5W Ta | 50A | 30V | N-Channel | 800 mV | 12m Ω @ 11A, 10V | 800mV @ 250μA (Min) | 20nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||
| TK3A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 540pF | 18ns | 8 ns | 3A | 30V | 650V | 35W Tc | N-Channel | 540pF @ 25V | 2.25Ohm @ 1.5A, 10V | 4.4V @ 1mA | 3A Ta | 11nC @ 10V | 2.25 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP9N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcp9n60n-datasheets-9296.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | 3 | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 83.3W | 1 | FET General Purpose Power | 12.7 ns | 8.7ns | 10.2 ns | 36.9 ns | 9A | 30V | SILICON | SWITCHING | 2V | 83.3W Tc | TO-220AB | 9A | 27A | 600V | N-Channel | 1240pF @ 100V | 385m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TK8A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 700pF | 20ns | 11 ns | 8A | 30V | 450V | 35W Tc | N-Channel | 700pF @ 25V | 900mOhm @ 4A, 10V | 4.4V @ 1mA | 8A Ta | 16nC @ 10V | 900 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT2904 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-220-3 | 18 Weeks | 100V | 326W Tc | N-Channel | 7085pF @ 50V | 4.4m Ω @ 20A, 10V | 3.3V @ 250μA | 120A Tc | 135nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA320N20NM3SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa320n20nm3sxksa1-datasheets-9231.pdf | TO-220-3 Full Pack | 13 Weeks | 200V | 38W Tc | N-Channel | 2300pF @ 100V | 32m Ω @ 26A, 10V | 4V @ 89μA | 26A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A50DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | No | 35W | 20ns | 11 ns | 60 ns | 7.5A | 30V | 35W Tc | 500V | N-Channel | 700pF @ 25V | 1.04 Ω @ 3.8A, 10V | 4.4V @ 1mA | 7.5A Ta | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R210CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r210cfd7atma1-datasheets-9234.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 64W Tc | N-Channel | 1015pF @ 400V | 210m Ω @ 4.9A, 10V | 4.5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7788DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7788dpt1ge3-datasheets-9131.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 44 ns | 21ns | 18 ns | 45 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5V | 5.2W Ta 69W Tc | 29.5A | 70A | N-Channel | 5370pF @ 15V | 3.1m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 125nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FDB86366-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb86366f085-datasheets-9238.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | 1.31247g | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 110A | 80V | 176W Tj | N-Channel | 6280pF @ 40V | 3.6m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7537PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7537trlpbf-datasheets-5735.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.084002g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | 15 ns | 105ns | 84 ns | 82 ns | 173A | 20V | SILICON | DRAIN | SWITCHING | 3.7V | 230W Tc | 700A | 554 mJ | 60V | N-Channel | 7020pF @ 25V | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 173A Tc | 210nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOTF18N65L | Alpha & Omega Semiconductor Inc. | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | not_compliant | 18A | 650V | 50W Tc | N-Channel | 3785pF @ 25V | 390m Ω @ 9A, 10V | 4.5V @ 250μA | 18A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0550N3-G-P013 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vp0550n3g-datasheets-1554.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 10 ns | 15ns | 10 ns | 10 ns | 54mA | 20V | SILICON | SWITCHING | 500V | 1W Tc | 0.054A | -500V | P-Channel | 70pF @ 25V | 125 Ω @ 10mA, 10V | 4.5V @ 1mA | 54mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FCPF260N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/onsemiconductor-fcp260n60e-datasheets-5164.pdf | TO-220-3 | 10.36mm | 4.9mm | 16.07mm | Lead Free | 16 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 36W | NOT SPECIFIED | Single | NOT SPECIFIED | 36W | 1 | FET General Purpose Power | 2.5nF | 20 ns | 11ns | 13 ns | 13 ns | 15A | 20V | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 260mOhm | 650V | 260 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S208AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp80n06s208aksa2-datasheets-9281.pdf | TO-220-3 | 3 | 16 Weeks | 3 | yes | EAR99 | Tin | 80A | 55V | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 215W | 1 | 14 ns | 15ns | 14 ns | 32 ns | 80A | 20V | 55V | SILICON | 215W Tc | TO-220AB | 0.008Ohm | 450 mJ | 55V | N-Channel | 2860pF @ 25V | 8m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SQM100N04-2M7_GE3 | Vishay Siliconix | $9.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm100n042m7ge3-datasheets-9286.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 1.946308g | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 14 ns | 11ns | 9 ns | 48 ns | 100A | 20V | SILICON | 40V | 40V | 157W Tc | 400A | 0.0027Ohm | 245 mJ | N-Channel | 7910pF @ 25V | 2.7m Ω @ 30A, 10V | 3.5V @ 250μA | 100A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI7302DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7302dnt1e3-datasheets-9289.pdf | PowerPAK® 1212-8 | 49 Weeks | 8 | PowerPAK® 1212-8 | 645pF | 8.4A | 220V | 3.8W Ta 52W Tc | N-Channel | 645pF @ 15V | 320mOhm @ 2.3A, 10V | 4V @ 250μA | 8.4A Tc | 21nC @ 10V | 320 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK625R0-40C,118 | Nexperia USA Inc. | $4.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk625r040c118-datasheets-8817.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | Tin | No | 3 | Single | 158W | 1 | 23 ns | 52ns | 77 ns | 164 ns | 90A | 16V | 40V | 158W Tc | 40V | N-Channel | 5200pF @ 25V | 5m Ω @ 25A, 10V | 2.8V @ 1mA | 90A Tc | 88nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC18N50C3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC173N10N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc173n10n3x1sa1-datasheets-9222.pdf | Die | Lead Free | 18 Weeks | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 100V | N-Channel | 100m Ω @ 2A, 10V | 3.5V @ 150μA | 1A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK5A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | Single | 35W | 20ns | 11 ns | 60 ns | 5A | 30V | 35W Tc | 600V | N-Channel | 700pF @ 25V | 1.43 Ω @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5A160PLZT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs5a160plzwft3g-datasheets-8931.pdf | 8-PowerTDFN, 5 Leads | 5 | 38 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 30 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.8W Ta 200W Tc | 400A | 0.0105Ohm | 335 mJ | P-Channel | 7700pF @ 20V | 7.7m Ω @ 50A, 10V | 2.6V @ 1mA | 15A Ta 100A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR220DP-T1-GE3 | Vishay Siliconix | $2.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/siliconlabs-ezr32lg330f256r55gc0-datasheets-6189.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 25V | 6.25W Ta 125W Tc | N-Channel | 1085pF @ 10V | 5.8mOhm @ 20A, 10V | 2.1V @ 250μA | 87.7A Ta 100A Tc | 200nC @ 10V | 4.5V 10V | +16V, -12V |
