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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMNH6008SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh6008spsq13-datasheets-0546.pdf | 8-PowerTDFN | 5 | 17 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 88A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.6W Ta | 16.5A | 140A | 194 mJ | N-Channel | 2597pF @ 30V | 8m Ω @ 20A, 10V | 4V @ 250μA | 16.5A Ta 88A Tc | 40.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N03S4L03ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb120n03s4l03atma1-datasheets-0552.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 120A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 79W Tc | 480A | 0.003Ohm | 75 mJ | N-Channel | 5300pF @ 25V | 3m Ω @ 100A, 10V | 2.2V @ 40μA | 120A Tc | 72nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| TP0606N3-G-P003 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tp0606n3g-datasheets-9666.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | yes | BOTTOM | 1 | Single | 1 | 10 ns | 15ns | 15 ns | 20 ns | 320mA | 20V | SILICON | SWITCHING | 60V | 1W Tc | -60V | P-Channel | 150pF @ 25V | 3.5 Ω @ 750mA, 10V | 2.4V @ 1mA | 320mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT412 | Alpha & Omega Semiconductor Inc. | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | 150W | 1 | FET General Purpose Power | 60A | 25V | Single | 100V | 2.6W Ta 150W Tc | N-Channel | 3220pF @ 50V | 15.8m Ω @ 20A, 10V | 3.8V @ 250μA | 8.2A Ta 60A Tc | 54nC @ 10V | 7V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RZY200P01TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rzy200p01tl-datasheets-0432.pdf | 3-SMD, Flat Lead | 3 | 20W | TCPT3 | 20A | 12V | 20W Tc | -12V | P-Channel | 20A Ta | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS0300S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms0300s-datasheets-0536.pdf | 8-PowerTDFN | 5 | 18 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 22 ns | 12ns | 7 ns | 50 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 96W Tc | MO-240AA | 242 mJ | N-Channel | 8705pF @ 15V | 1.8m Ω @ 30A, 10V | 3V @ 1mA | 31A Ta 49A Tc | 133nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMT6004SPS-13 | Diodes Incorporated | $5.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6004sps13-datasheets-0587.pdf | 8-PowerTDFN | 22 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 2.5W Ta | N-Channel | 4556pF @ 30V | 3.1m Ω @ 50A, 10V | 4V @ 250μA | 23A Ta | 95.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A09KQTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn6a09kqtc-datasheets-0592.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 10.1W Ta | N-Channel | 1426pF @ 30V | 40m Ω @ 7.3A, 10V | 3V @ 250μA | 11.8A Ta | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU2905PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr2905trlpbf-datasheets-6372.pdf | 55V | 42A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 13 Weeks | No SVHC | 27mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 110W | SINGLE | 260 | 30 | 110W | 1 | FET General Purpose Power | 11 ns | 84ns | 15 ns | 26 ns | 42A | 16V | 55V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 20A | 55V | N-Channel | 1700pF @ 25V | 2 V | 27m Ω @ 25A, 10V | 2V @ 250μA | 42A Tc | 48nC @ 5V | |||||||||||||||||||||||||||||||||||
| NVMFS6H824NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h824nt1g-datasheets-6205.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.8W Ta 115W Tc | N-Channel | 2470pF @ 40V | 4.5m Ω @ 20A, 10V | 4V @ 140μA | 19A Ta 103A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF12N60 | Alpha & Omega Semiconductor Inc. | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 12A | 600V | 28W Tc | N-Channel | 2100pF @ 25V | 550m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60N600CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n600chc5g-datasheets-0498.pdf | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 600V | 83W Tc | N-Channel | 743pF @ 100V | 600mOhm @ 4A, 10V | 4V @ 250μA | 8A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C638NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvmfs5c638nlt1g-datasheets-7253.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 260 | 30 | 60V | 4W Ta 100W Tc | N-Channel | 2880pF @ 25V | 3m Ω @ 50A, 10V | 2V @ 250μA | 26A Ta 133A Tc | 40.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf3709zstrrpbf-datasheets-0502.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 6.3MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 79W | 1 | R-PSSO-G2 | 13 ns | 41ns | 4.7 ns | 16 ns | 87A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 79W Tc | 42A | 60 mJ | 30V | N-Channel | 2130pF @ 15V | 6.3m Ω @ 21A, 10V | 2.25V @ 250μA | 87A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDPF7N60NZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdp7n60nz-datasheets-4185.pdf | TO-220-3 Full Pack | 4 Weeks | 2.27g | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 17.5 ns | 30ns | 25 ns | 40 ns | 6.5A | 30V | 600V | 33W Tc | N-Channel | 730pF @ 25V | 1.25 Ω @ 3.25A, 10V | 5V @ 250μA | 6.5A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR9024NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirfr9024ntrl-datasheets-0520.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 38W Tc | TO-252AA | 11A | 44A | 0.175Ohm | 62 mJ | P-Channel | 350pF @ 25V | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44ESTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfz44estrlpbf-datasheets-8378.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 110W Tc | 48A | 192A | 0.023Ohm | 220 mJ | N-Channel | 1360pF @ 25V | 23m Ω @ 29A, 10V | 4V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S214ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd50n06s214atma2-datasheets-0455.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | AEC-Q101 | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 136W | 1 | R-PSSO-G2 | 13 ns | 29ns | 19 ns | 30 ns | 50A | 20V | 55V | SILICON | DRAIN | 136W Tc | 200A | 0.0144Ohm | 240 mJ | 55V | N-Channel | 1485pF @ 25V | 14.4m Ω @ 32A, 10V | 4V @ 80μA | 50A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK46E08N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 80A | 80V | 103W Tc | N-Channel | 2500pF @ 40V | 8.4m Ω @ 23A, 10V | 4V @ 500μA | 80A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C430NWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c430naft1g-datasheets-1229.pdf | 8-PowerTDFN, 5 Leads | 44 Weeks | 40V | 3.8W Ta 106W Tc | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 250μA | 35A Ta 185A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R2K7C3AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | -40°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 800V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 2A | 6A | 2.7Ohm | 90 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB35N10S3L26ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb35n10s3l26atma1-datasheets-0472.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 71W Tc | 35A | 140A | 0.0322Ohm | 175 mJ | N-Channel | 2700pF @ 25V | 26.3m Ω @ 35A, 10V | 2.4V @ 39μA | 35A Tc | 39nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR800DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 20V | 69W Tc | N-Channel | 5125pF @ 10V | 2.3mOhm @ 15A, 10V | 1.5V @ 250μA | 50A Tc | 133nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | TO-220-3 Full Pack | 3 | 16 Weeks | 3 | No | SINGLE | 1 | 20ns | 12 ns | 8A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | 8A | 0.85Ohm | 165 mJ | N-Channel | 800pF @ 25V | 850m Ω @ 4A, 10V | 4V @ 1mA | 8A Ta | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF4N90CT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqpf4n90c-datasheets-8750.pdf | TO-220-3 Full Pack | Lead Free | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 47W | 1 | FET General Purpose Power | 25 ns | 50ns | 35 ns | 40 ns | 4A | 30V | 900V | 47W Tc | 4A | N-Channel | 960pF @ 25V | 4.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 22nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3709pbf-datasheets-7962.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 120W | 1 | R-PSSO-G2 | 11 ns | 171ns | 9.2 ns | 21 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 120W Tc | 75A | 0.009Ohm | 30V | N-Channel | 2672pF @ 16V | 20 V | 9m Ω @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| ZVP0545ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvp0545a-datasheets-3335.pdf | -450V | -45mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | R-PSIP-W3 | 10 ns | 15ns | 15 ns | 15 ns | 45mA | 20V | SILICON | SWITCHING | 450V | 700mW Ta | 0.045A | P-Channel | 120pF @ 25V | 150 Ω @ 50mA, 10V | 4.5V @ 1mA | 45mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRLR120TRRPBF | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 0.27Ohm | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| SIR638DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishay-sir638dpt1re3-datasheets-4627.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | S17-0173-Single | 1 | 6.25W | 150°C | PowerPAK® SO-8 | 20 ns | 52 ns | 62.8A | 40V | 104W Tc | 730μOhm | 40V | N-Channel | 10500pF @ 20V | 0.88mOhm @ 20A, 10V | 2.3V @ 250μA | 100A Tc | 204nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI7440GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | TO-220-3 Full Pack | 3 | 12 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 95A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40V | 40V | 42W Tc | TO-220AB | 380A | 0.0025Ohm | 407 mJ | N-Channel | 4549pF @ 25V | 2.5m Ω @ 57A, 10V | 3.9V @ 100μA | 95A Tc | 132nC @ 10V | 10V | ±20V |
