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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPH4R10ANL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 100V | 2.5W Ta 67W Tc | N-Channel | 6.3nF @ 50V | 4.1m Ω @ 35A, 10V | 2.5V @ 1mA | 92A Ta 70A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C628NLAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c628nlwfaft3g-datasheets-0372.pdf | 8-PowerTDFN, 5 Leads | 34 Weeks | 60V | 3.7W Ta 110W Tc | N-Channel | 3600pF @ 25V | 2.4m Ω @ 50A, 10V | 2V @ 135μA | 28A Ta 150A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT4002LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmt4002lps13-datasheets-9867.pdf | 8-PowerTDFN | 24 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.3W | N-Channel | 6771pF @ 20V | 1.8m Ω @ 25A, 10V | 3V @ 250μA | 100A Ta | 116.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6811STRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf6811strpbf-datasheets-9669.pdf&product=infineontechnologies-irf6811strpbf-6852402 | DirectFET™ Isometric SQ | 700μm | Lead Free | 2 | 13 Weeks | 3.7MOhm | 6 | EAR99 | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.1W | 1 | FET General Purpose Power | Not Qualified | 150°C | R-XBCC-N2 | 8.7 ns | 19ns | 5.5 ns | 11 ns | 19A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 32W Tc | 74A | 32 mJ | 25V | N-Channel | 1590pF @ 13V | 3.7m Ω @ 19A, 10V | 2.1V @ 35μA | 19A Ta 74A Tc | 17nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| SIPC08N60C3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R310CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r310cfdatma2-datasheets-8275.pdf | TO-220-3 Full Pack | 18 Weeks | 650V | 32W Tc | N-Channel | 1100pF @ 100V | 310m Ω @ 4.4A, 10V | 4.5V @ 400μA | 11.4A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z34NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf9z34nstrlpbf-datasheets-7808.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 68W Tc | 19A | 68A | 0.1Ohm | 180 mJ | P-Channel | 620pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTMFS4982NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4982nft1g-datasheets-8417.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | 1 | Other Transistors | 207A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.5W Ta | 36A | 0.0019Ohm | N-Channel | 6000pF @ 15V | 1.3m Ω @ 25A, 10V | 2.2V @ 1mA | 26.5A Ta 207A Tc | 84nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L06ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd90n06s4l06atma2-datasheets-9762.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.41mm | 6.22mm | 2 | 16 Weeks | 3.949996g | 3 | yes | ULTRA-LOW RESISTANCE | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 3ns | 8 ns | 50 ns | 90A | 16V | 60V | SILICON | DRAIN | 79W Tc | 67 mJ | N-Channel | 5680pF @ 25V | 6.3m Ω @ 90A, 10V | 2.2V @ 40μA | 90A Tc | 75nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| RSH125N03TB1 | ROHM Semiconductor | $8.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsh125n03tb1-datasheets-9645.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 2W | 8-SOP | 1.67nF | 12.5A | 30V | 2W Ta | 9.3mOhm | 30V | N-Channel | 1670pF @ 10V | 9.1mOhm @ 12.5A, 10V | 2.5V @ 1mA | 12.5A Ta | 28nC @ 5V | 9.1 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ039N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz039n06nsatma1-datasheets-9655.pdf | 8-PowerTDFN | 13 Weeks | 60V | 2.1W Ta 69W Tc | N-Channel | 2500pF @ 30V | 3.9m Ω @ 20A, 10V | 3.3V @ 36μA | 18A Ta 40A Tc | 34nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT1446-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/onsemiconductor-sft1446tlh-datasheets-9652.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 5.5mm | Lead Free | 8 Weeks | 3 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | YES | 3 | Single | 23W | FET General Purpose Powers | 8.5 ns | 31ns | 48 ns | 60 ns | 20A | 20V | 1W Ta 23W Tc | 60V | N-Channel | 750pF @ 20V | 51m Ω @ 10A, 10V | 2.6V @ 1mA | 20A Ta | 16nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF135S203 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf135b203-datasheets-9614.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 129A | 135V | 441W Tc | N-Channel | 9700pF @ 50V | 8.4m Ω @ 77A, 10V | 4V @ 250μA | 129A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS4C302NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/onsemiconductor-nvmfs4c302nt1g-datasheets-0593.pdf | 8-PowerTDFN, 5 Leads | 5 | 10 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.75W Ta 115W Tc | 43A | 900A | 0.0017Ohm | 186 mJ | N-Channel | 5780pF @ 15V | 1.15m Ω @ 30A, 10V | 2.2V @ 250μA | 43A Ta 241A Tc | 82nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P04-09L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0409lge3-datasheets-2137.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | P-Channel | 6675pF @ 20V | 9.4mOhm @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW10N60 | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 10A | 600V | 250W Tc | N-Channel | 1600pF @ 25V | 750m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF10N65 | Alpha & Omega Semiconductor Inc. | $4.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 10A | 650V | 25W Tc | N-Channel | 1645pF @ 25V | 1 Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF40H210 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf40h210-datasheets-9698.pdf | 8-PowerVDFN | Lead Free | 12 Weeks | 1.7mOhm | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 100A | 40V | 125W Tc | N-Channel | 5406pF @ 25V | 1.7m Ω @ 100A, 10V | 3.7V @ 150μA | 100A Tc | 152nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6156 | Alpha & Omega Semiconductor Inc. | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSMD, Flat Leads | 18 Weeks | 45V | 78W Tc | N-Channel | 3975pF @ 22.5V | 2.6m Ω @ 20A, 10V | 2.5V @ 250μA | 100A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU7740PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfr7740trpbf-datasheets-4261.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 12 Weeks | 6.8Ohm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 87A | 75V | 140W Tc | N-Channel | 4430pF @ 25V | 7.2m Ω @ 52A, 10V | 3.7V @ 100μA | 87A Tc | 126nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN86501LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdn86501lz-datasheets-9726.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | 30mg | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | Single | NOT SPECIFIED | 1 | R-PDSO-G3 | 2.6A | SILICON | SWITCHING | 60V | 60V | 1.5W Ta | 0.116Ohm | 10 pF | N-Channel | 335pF @ 30V | 116m Ω @ 2.6A, 10V | 3V @ 250μA | 2.6A Ta | 5.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTY15N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 15A | 200V | N-Channel | 15A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK5N100L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 4A | 1000V | 195W Tc | N-Channel | 1150pF @ 25V | 4.2 Ω @ 2.5A, 10V | 4.5V @ 250μA | 4A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP5862NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 | 3 | 22 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | 115W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 115W | 1 | FET General Purpose Power | 70ns | 60 ns | 35 ns | 98A | 20V | SILICON | DRAIN | TO-220AB | 50A | 0.0057Ohm | 205 mJ | 60V | N-Channel | 6000pF @ 25V | 5.7m Ω @ 45A, 10V | 4V @ 250μA | 98A Tc | 82nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||
| SQD25N15-52-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd25n1552ge3-datasheets-8967.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 150V | 107W Tc | N-Channel | 2200pF @ 25V | 52mOhm @ 15A, 10V | 4V @ 250μA | 25A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C406NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c406nwft1g-datasheets-9586.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 179W Tc | N-Channel | 7288pF @ 20V | 0.8m Ω @ 50A, 10V | 4V @ 280μA | 52A Ta 353A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P03-07-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0307ge3-datasheets-4543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 30V | 136W Tc | P-Channel | 5490pF @ 25V | 7mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 146nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R299CPAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipl60r299cpauma1-datasheets-9531.pdf | 4-PowerTSFN | Contains Lead | 4 | No SVHC | 4 | no | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | 10 ns | 5ns | 40 ns | 11.1A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 3V | 96W Tc | 0.299Ohm | 290 mJ | N-Channel | 1100pF @ 100V | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 11.1A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA1R4N100PTRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1000V | 63W Tc | N-Channel | 450pF @ 25V | 11.8 Ω @ 700mA, 10V | 4.5V @ 50μA | 1.4A Tc | 17.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 35W | 7.5A | 450V | N-Channel | 7.5A Tc |
