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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQD100N04_3M6T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd100n043m6t4ge3-datasheets-9626.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | N-Channel | 6700pF @ 25V | 3.6mOhm @ 20A, 10V | 3.5V @ 250μA | 100A | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY15N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 15A | 200V | N-Channel | 15A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK5N100L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 4A | 1000V | 195W Tc | N-Channel | 1150pF @ 25V | 4.2 Ω @ 2.5A, 10V | 4.5V @ 250μA | 4A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP5862NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 | 3 | 22 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | 115W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 115W | 1 | FET General Purpose Power | 70ns | 60 ns | 35 ns | 98A | 20V | SILICON | DRAIN | TO-220AB | 50A | 0.0057Ohm | 205 mJ | 60V | N-Channel | 6000pF @ 25V | 5.7m Ω @ 45A, 10V | 4V @ 250μA | 98A Tc | 82nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD25N15-52-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd25n1552ge3-datasheets-8967.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 150V | 107W Tc | N-Channel | 2200pF @ 25V | 52mOhm @ 15A, 10V | 4V @ 250μA | 25A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C406NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c406nwft1g-datasheets-9586.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 179W Tc | N-Channel | 7288pF @ 20V | 0.8m Ω @ 50A, 10V | 4V @ 280μA | 52A Ta 353A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P03-07-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0307ge3-datasheets-4543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 30V | 136W Tc | P-Channel | 5490pF @ 25V | 7mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 146nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK5A65DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 700pF | 20ns | 9 ns | 4.5A | 30V | 650V | 35W Tc | N-Channel | 700pF @ 25V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 4.5A Ta | 16nC @ 10V | 1.67 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD90P04_9M4LT4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd90p049m4lge3-datasheets-0446.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | P-Channel | 6675pF @ 20V | 9.4mOhm @ 17A, 10V | 2.5V @ 250μA | 90A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCP87022T-U/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/microchiptechnology-mcp87022tumf-datasheets-9451.pdf | 8-PowerTDFN | 5mm | 1mm | 6mm | 11 Weeks | No SVHC | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 260 | MCP87022 | Single | 40 | 2.2W | FET General Purpose Power | 7.6 ns | 27ns | 17 ns | 21 ns | 100A | 10V | 2.2W Ta | 25V | N-Channel | 2310pF @ 12.5V | 1.3 V | 2.3m Ω @ 25A, 10V | 1.6V @ 250μA | 100A Tc | 29nC @ 4.5V | 4.5V 10V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ44GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfiz44gpbf-datasheets-9525.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 48W | 1 | TO-220-3 | 2.5nF | 19 ns | 120ns | 86 ns | 55 ns | 30A | 20V | 60V | 4V | 48W Tc | 28mOhm | N-Channel | 2500pF @ 25V | 4 V | 28mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 95nC @ 10V | 28 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3710 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-2sk3710-datasheets-9537.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 85A | SILICON | SINGLE | 60V | 60V | 100W Tc | 70A | 140A | 0.006Ohm | 468 mJ | N-Channel | 8400pF @ 10V | 6m Ω @ 35A, 10V | 4V @ 1mA | 85A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB6N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb6n80ege3-datasheets-9540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 800V | 78W Tc | N-Channel | 827pF @ 100V | 940mOhm @ 3A, 10V | 4V @ 250μA | 5.4A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1404STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irl1404strlpbf-datasheets-9541.pdf | 40V | 160A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.703mm | 4.826mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 4mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 18 ns | 270ns | 130 ns | 38 ns | 160A | 20V | 40V | SILICON | DRAIN | SWITCHING | 3V | 3.8W Ta 200W Tc | 640A | 520 mJ | 40V | N-Channel | 6600pF @ 25V | 3 V | 4m Ω @ 95A, 10V | 3V @ 250μA | 160A Tc | 140nC @ 5V | 4.3V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTMFS4852NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4852nt1g-datasheets-3899.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 1 | FET General Purpose Power | 21.1 ns | 25.6ns | 12 ns | 35 ns | 155A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 900mW Ta 86.2W Tc | 0.0033Ohm | 360 mJ | N-Channel | 4970pF @ 12V | 1.8 V | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 16A Ta 155A Tc | 71.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA600N25NM3SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa600n25nm3sxksa1-datasheets-9560.pdf | TO-220-3 Full Pack | 13 Weeks | 250V | 38W Tc | N-Channel | 2300pF @ 100V | 60m Ω @ 15A, 10V | 4V @ 89μA | 15A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R280C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r280c6xksa1-datasheets-9561.pdf | TO-220-3 Full Pack | 3 | 4 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 32W Tc | TO-220AB | 13.8A | 40A | 0.28Ohm | 284 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 13.8A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfz24pbf-datasheets-1307.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | yes | EAR99 | No | 8541.29.00.95 | SINGLE | GULL WING | 260 | 4 | 30 | 1 | R-PSSO-G2 | 13 ns | 58ns | 42 ns | 25 ns | 17A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 60V | 60V | 3.7W Ta 60W Tc | 68A | 0.1Ohm | 100 mJ | N-Channel | 640pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFSL3206PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3206trrpbf-datasheets-3065.pdf | 60V | 210A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 300W | 1 | FET General Purpose Power | 19 ns | 82ns | 83 ns | 55 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 840A | 60V | N-Channel | 6540pF @ 50V | 3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C406NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c406nlt1g-datasheets-5972.pdf | 8-PowerTDFN, 5 Leads | 7 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 179W Tc | N-Channel | 9400pF @ 20V | 700μ Ω @ 50A, 10V | 2V @ 280μA | 53A Ta 362A Tc | 149nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S207ATMA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipi80n06s207aksa2-datasheets-8954.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 250W Tc | 80A | 320A | 0.0063Ohm | 530 mJ | N-Channel | 3400pF @ 25V | 6.3m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9615-100E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9615100e118-datasheets-9513.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Brass, Bronze | 2 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 26.6 ns | 62.2ns | 59.1 ns | 77.6 ns | 66A | 10V | 100V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 24 AWG | 20 AWG | 182W Tc | Gold, Lead, Tin | 0.015Ohm | N-Channel | 6813pF @ 25V | 14m Ω @ 15A, 10V | 2.1V @ 1mA | 66A Tc | 60nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB042N10N3GE8187ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb042n10n3ge8187atma1-datasheets-9462.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | yes | EAR99 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 41 ns | 59ns | 14 ns | 48 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 214W Tc | 400A | 0.0042Ohm | N-Channel | 8410pF @ 50V | 4.2m Ω @ 50A, 10V | 3.5V @ 150μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34STRLPBF | Vishay Siliconix | $9.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz34strlpbf-datasheets-9466.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 11 Weeks | 3 | No | D2PAK | 1.2nF | 13 ns | 100ns | 52 ns | 29 ns | 30A | 20V | 60V | 3.7W Ta 88W Tc | 50MOhm | N-Channel | 1200pF @ 25V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 50 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R299CPX1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 26 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMJ70H900HJ3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h900hj3-datasheets-9469.pdf | TO-251-3, IPak, Short Leads | 11 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 700V | 68W Tc | N-Channel | 603pF @ 50V | 900m Ω @ 1.5A, 10V | 4V @ 250μA | 7A Tc | 18.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R310CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r310cfdatma1-datasheets-1369.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 32W | 1 | 11 ns | 7.5ns | 7 ns | 45 ns | 11.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 32W Tc | TO-220AB | 290 mJ | N-Channel | 1100pF @ 100V | 310m Ω @ 4.4A, 10V | 4.5V @ 440μA | 11.4A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF734 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf734-datasheets-9477.pdf | 450V | 4.9A | TO-220-3 | Contains Lead | 21 Weeks | TO-220AB | 680pF | 22ns | 4.9A | 450V | 74W Tc | 1.2Ohm | 450V | N-Channel | 680pF @ 25V | 1.2Ohm @ 2.9A, 10V | 4V @ 250μA | 4.9A Tc | 45nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R310CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r310cfdxksa2-datasheets-9481.pdf | TO-220-3 | 18 Weeks | 650V | 104.2W Tc | N-Channel | 1100pF @ 100V | 310m Ω @ 4.4A, 10V | 4.5V @ 400μA | 11.4A Tc | 41nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FKP252 | Sanken | $2.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-fkp252-datasheets-9482.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 25A | SILICON | SINGLE | ISOLATED | SWITCHING | 250V | 250V | 40W Tc | TO-220AB | 100A | 0.075Ohm | 200 mJ | N-Channel | 2000pF @ 25V | 75m Ω @ 12A, 10V | 4.5V @ 1mA | 25A Ta | 10V | ±30V |
