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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF614PBF | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf614pbf-datasheets-0341.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 36W | 1 | TO-220AB | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.7A | 20V | 250V | 4V | 36W Tc | 2Ohm | N-Channel | 140pF @ 25V | 4 V | 2Ohm @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S4L05ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb80n06s4l05atma2-datasheets-0347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | 2 | 16 Weeks | 1.946308g | 3 | yes | EAR99 | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 107W | 1 | R-PSSO-G2 | 14 ns | 4ns | 13 ns | 80 ns | 80A | 16V | 60V | SILICON | DRAIN | 107W Tc | 0.0048Ohm | 60V | N-Channel | 8180pF @ 25V | 5.1m Ω @ 80A, 10V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| DI9405T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-di9405t-datasheets-9556.pdf | -20V | -4.3A | SMD/SMT | Contains Lead | 8 | 2.5W | 1.425nF | 4.3A | 20V | 100 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C442NLTT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c442nltt3g-datasheets-0719.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 25V | 2.5m Ω @ 50A, 10V | 2V @ 250μA | 28A Ta 130A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6522 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 200A | 25V | 7.3W Ta 83W Tc | N-Channel | 7036pF @ 15V | 0.95m Ω @ 20A, 10V | 2V @ 250μA | 71A Ta 200A Tc | 145nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPS1100DR | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.58mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | Gold | No | e4 | DUAL | GULL WING | 260 | TPS1100 | 8 | 791mW | 1 | Other Transistors | 4.5 ns | 10ns | 10 ns | 13 ns | 1.6A | 2V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 791mW Ta | MS-012AA | 0.4Ohm | 15V | P-Channel | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 1.6A Ta | 5.45nC @ 10V | 2.7V 10V | +2V, -15V | |||||||||||||||||||||||||||||||||||||||
| AOWF10N60 | Alpha & Omega Semiconductor Inc. | $5.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | TO-262F | 1.6nF | 10A | 600V | 25W Tc | N-Channel | 1600pF @ 25V | 750mOhm @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 40nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S208ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp80n06s208aksa2-datasheets-9281.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | No | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 14 ns | 15ns | 14 ns | 32 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 215W Tc | 0.0077Ohm | 450 mJ | N-Channel | 2860pF @ 25V | 7.7m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N25CYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf9n25ct-datasheets-0437.pdf | TO-220-3 Full Pack, Formed Leads | 10.36mm | 16.07mm | 4.9mm | 4 Weeks | 2.565g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 15 ns | 85ns | 65 ns | 90 ns | 8.8A | 30V | 38W Tc | 250V | N-Channel | 710pF @ 25V | 430m Ω @ 4.4A, 10V | 4V @ 250μA | 8.8A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7423DN-T1-GE3 | Vishay Siliconix | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7423dnt1e3-datasheets-7837.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 14 Weeks | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | Other Transistors | 11 ns | 10ns | 50 ns | 74 ns | 11.7A | 20V | 30V | -1V | 1.5W Ta | 7.4A | P-Channel | -1 V | 18m Ω @ 11.7A, 10V | 3V @ 250μA | 7.4A Ta | 56nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOB4S60L | Alpha & Omega Semiconductor Inc. | $4.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | yes | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 83W | 1 | R-PSSO-G2 | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 83W Tc | 4A | 0.9Ohm | 77 mJ | N-Channel | 263pF @ 100V | 900m Ω @ 2A, 10V | 4.1V @ 250μA | 4A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD85P04P4L06ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd85p04p4l06atma1-datasheets-0222.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 88W | 1 | R-PSSO-G2 | 17 ns | 10ns | 39 ns | 62 ns | 85A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 88W Tc | 0.0064Ohm | P-Channel | 6580pF @ 25V | 6.4m Ω @ 85A, 10V | 2.2V @ 150μA | 85A Tc | 104nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| SQJ456EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj456ept2ge3-datasheets-0229.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 100V | 83W Tc | N-Channel | 3342pF @ 25V | 26mOhm @ 9.3A, 10V | 3.5V @ 250μA | 32A Tc | 63nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI7S65 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-251-3 Stub Leads, IPak | 16 Weeks | 7A | 650V | 89W Tc | N-Channel | 434pF @ 100V | 650m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 9.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0393DPA-00#J5A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0393dpa00j5a-datasheets-0236.pdf | 8-PowerWDFN | Lead Free | 16 Weeks | EAR99 | FET General Purpose Powers | 40A | Single | 30V | 40W Tc | N-Channel | 3270pF @ 10V | 4.3m Ω @ 20A, 10V | 40A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD85P04P407ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd85p04p407atma1-datasheets-0239.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 88W | 1 | R-PSSO-G2 | 24 ns | 15ns | 39 ns | 34 ns | 85A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 88W Tc | 340A | 0.0073Ohm | 30 mJ | P-Channel | 6085pF @ 25V | 7.3m Ω @ 85A, 10V | 4V @ 150μA | 85A Tc | 89nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FCPF2250N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcpf2250n80z-datasheets-0246.pdf | TO-220-3 Full Pack | 15 Weeks | 2.27g | 2.25Ohm | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 11 ns | 6.7ns | 8.7 ns | 26 ns | 2.6A | 30V | 800V | 21.9W Tc | N-Channel | 585pF @ 100V | 2.25 Ω @ 1.3A, 10V | 4.5V @ 260μA | 2.6A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R660CFDATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd65r660cfdatma2-datasheets-0258.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | compliant | 700V | 63W Tc | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9110TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9110trpbf-datasheets-7143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | 1.437803g | 3 | No | 1 | Single | D-Pak | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 3.1A | 20V | 100V | 2.5W Ta 25W Tc | 1.2Ohm | P-Channel | 200pF @ 25V | 1.2Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS430DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis430dnt1ge3-datasheets-0263.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.8W | 1 | FET General Purpose Power | 20 ns | 12ns | 10 ns | 25 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8W Ta 52W Tc | 60A | 45 mJ | 25V | N-Channel | 1600pF @ 12.5V | 5.1m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FQPF5P20RDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqpf5p20-datasheets-0905.pdf | TO-220-3 Full Pack | 4 Weeks | 2.565g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | Other Transistors | 200V | 38W Tc | 3.4A | P-Channel | 430pF @ 25V | 1.4 Ω @ 1.7A, 10V | 5V @ 250μA | 2.15A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF12N60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/alphaomegasemiconductor-aotf12n60-datasheets-8843.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220-3F | 2.1nF | 12A | 600V | 50W Tc | N-Channel | 2100pF @ 25V | 550mOhm @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 50nC @ 10V | 550 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL510SPBF | Vishay Siliconix | $5.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl510strlpbf-datasheets-6331.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | Lead Free | 8 Weeks | 1.437803g | 220 | No | 1 | Single | 3.7W | 1 | D2PAK | 250pF | 9.3 ns | 47ns | 18 ns | 16 ns | 5.6A | 10V | 100V | 3.7W Ta 43W Tc | 130 ns | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 3.4A, 5V | 2V @ 250μA | 5.6A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| DMNH6008SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh6008sps13-datasheets-0133.pdf | 8-PowerTDFN | 17 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 88A | 60V | 3.3W Ta | N-Channel | 2597pF @ 30V | 8m Ω @ 20A, 10V | 4V @ 250μA | 16.5A Ta 88A Tc | 40.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4939NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nttfs4939ntag-datasheets-5986.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | 8 | Single | 1 | FET General Purpose Power | S-XDSO-N5 | 12.2 ns | 20.6ns | 3.9 ns | 20.8 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 850mW Ta 29.8W Tc | N-Channel | 1979pF @ 15V | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 8.9A Ta 52A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S2L13ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-ipd50n06s2l13atma2-datasheets-0147.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 10 Weeks | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 50A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 200A | 0.0167Ohm | 240 mJ | N-Channel | 1800pF @ 25V | 12.7m Ω @ 34A, 10V | 2V @ 80μA | 50A Tc | 69nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR120TRRPBF | Vishay Siliconix | $4.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-Pak | 100V | 2.5W Ta 42W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ30S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 43ns | 118 ns | 30A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 68W Tc | 60A | 0.028Ohm | 71 mJ | P-Channel | 3950pF @ 10V | 21.8m Ω @ 15A, 10V | 3V @ 1mA | 30A Ta | 80nC @ 10V | 6V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R650C6SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r650c6satma1-datasheets-0158.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 75.891673mg | 8 | yes | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 12 ns | 9ns | 13 ns | 80 ns | 6.7A | 30V | 650V | SILICON | DRAIN | SWITCHING | 56.8W Tc | 0.65Ohm | N-Channel | 440pF @ 100V | 650m Ω @ 2.1A, 10V | 3.5V @ 210μA | 6.7A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMTH6005LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth6005lpsq13-datasheets-0163.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 3.2W Ta 150W Tc | N-Channel | 2962pF @ 30V | 5.5m Ω @ 50A, 10V | 3V @ 250μA | 20.6A Ta 100A Tc | 47.1nC @ 10V | 4.5V 10V | ±20V |
