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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB80N06S208ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp80n06s208aksa2-datasheets-9281.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | No | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 14 ns | 15ns | 14 ns | 32 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 215W Tc | 0.0077Ohm | 450 mJ | N-Channel | 2860pF @ 25V | 7.7m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AOWF11N60 | Alpha & Omega Semiconductor Inc. | $5.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 11A | 600V | 27.8W Tc | N-Channel | 1990pF @ 25V | 650m Ω @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N65X2 | IXYS | $1.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 8A | 650V | 150W Tc | N-Channel | 800pF @ 25V | 500m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0106N3-G-P013 | Microchip Technology | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0106n3g-datasheets-7636.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 6 Weeks | 453.59237mg | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | BOTTOM | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-T3 | 2 ns | 3ns | 3 ns | 6 ns | 350mA | 20V | SILICON | SWITCHING | 1W Tc | 0.35A | 3Ohm | 8 pF | 60V | N-Channel | 60pF @ 25V | 3 Ω @ 500mA, 10V | 2V @ 500μA | 350mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOTF12N50 | Alpha & Omega Semiconductor Inc. | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 50W | 1 | FET General Purpose Power | 12A | 30V | Single | 500V | 50W Tc | N-Channel | 1633pF @ 25V | 520m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT12N50 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 250W | 1 | FET General Purpose Power | 12A | 30V | Single | 500V | 250W Tc | N-Channel | 1633pF @ 25V | 520m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0106N3-G-P003 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0106n3g-datasheets-7636.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1W | 1 | 2 ns | 3ns | 3 ns | 6 ns | 350mA | 2V | SILICON | SWITCHING | 1W Tc | 3Ohm | 8 pF | 60V | N-Channel | 60pF @ 25V | 3 Ω @ 500mA, 10V | 2V @ 500μA | 350mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7114DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7114dnt1e3-datasheets-7743.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 45 ns | 18.3A | 20V | SILICON | DRAIN | SWITCHING | 30V | 1V | 1.5W Ta | 60A | 0.0075Ohm | 42 mJ | N-Channel | 7.5m Ω @ 18.3A, 10V | 3V @ 250μA | 11.7A Ta | 19nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPD85P04P407ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd85p04p407atma1-datasheets-0239.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 88W | 1 | R-PSSO-G2 | 24 ns | 15ns | 39 ns | 34 ns | 85A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 88W Tc | 340A | 0.0073Ohm | 30 mJ | P-Channel | 6085pF @ 25V | 7.3m Ω @ 85A, 10V | 4V @ 150μA | 85A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FCPF2250N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcpf2250n80z-datasheets-0246.pdf | TO-220-3 Full Pack | 15 Weeks | 2.27g | 2.25Ohm | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 11 ns | 6.7ns | 8.7 ns | 26 ns | 2.6A | 30V | 800V | 21.9W Tc | N-Channel | 585pF @ 100V | 2.25 Ω @ 1.3A, 10V | 4.5V @ 260μA | 2.6A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R660CFDATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd65r660cfdatma2-datasheets-0258.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | compliant | 700V | 63W Tc | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9110TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9110trpbf-datasheets-7143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | 1.437803g | 3 | No | 1 | Single | D-Pak | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 3.1A | 20V | 100V | 2.5W Ta 25W Tc | 1.2Ohm | P-Channel | 200pF @ 25V | 1.2Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS430DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis430dnt1ge3-datasheets-0263.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.8W | 1 | FET General Purpose Power | 20 ns | 12ns | 10 ns | 25 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8W Ta 52W Tc | 60A | 45 mJ | 25V | N-Channel | 1600pF @ 12.5V | 5.1m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQPF5P20RDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqpf5p20-datasheets-0905.pdf | TO-220-3 Full Pack | 4 Weeks | 2.565g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | Other Transistors | 200V | 38W Tc | 3.4A | P-Channel | 430pF @ 25V | 1.4 Ω @ 1.7A, 10V | 5V @ 250μA | 2.15A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF12N60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/alphaomegasemiconductor-aotf12n60-datasheets-8843.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220-3F | 2.1nF | 12A | 600V | 50W Tc | N-Channel | 2100pF @ 25V | 550mOhm @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 50nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL510SPBF | Vishay Siliconix | $5.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl510strlpbf-datasheets-6331.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | Lead Free | 8 Weeks | 1.437803g | 220 | No | 1 | Single | 3.7W | 1 | D2PAK | 250pF | 9.3 ns | 47ns | 18 ns | 16 ns | 5.6A | 10V | 100V | 3.7W Ta 43W Tc | 130 ns | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 3.4A, 5V | 2V @ 250μA | 5.6A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| DMNH6008SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh6008sps13-datasheets-0133.pdf | 8-PowerTDFN | 17 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 88A | 60V | 3.3W Ta | N-Channel | 2597pF @ 30V | 8m Ω @ 20A, 10V | 4V @ 250μA | 16.5A Ta 88A Tc | 40.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4939NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nttfs4939ntag-datasheets-5986.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | 8 | Single | 1 | FET General Purpose Power | S-XDSO-N5 | 12.2 ns | 20.6ns | 3.9 ns | 20.8 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 850mW Ta 29.8W Tc | N-Channel | 1979pF @ 15V | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 8.9A Ta 52A Tc | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQPF9N25CYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf9n25ct-datasheets-0437.pdf | TO-220-3 Full Pack, Formed Leads | 10.36mm | 16.07mm | 4.9mm | 4 Weeks | 2.565g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 15 ns | 85ns | 65 ns | 90 ns | 8.8A | 30V | 38W Tc | 250V | N-Channel | 710pF @ 25V | 430m Ω @ 4.4A, 10V | 4V @ 250μA | 8.8A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7423DN-T1-GE3 | Vishay Siliconix | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7423dnt1e3-datasheets-7837.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 14 Weeks | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | Other Transistors | 11 ns | 10ns | 50 ns | 74 ns | 11.7A | 20V | 30V | -1V | 1.5W Ta | 7.4A | P-Channel | -1 V | 18m Ω @ 11.7A, 10V | 3V @ 250μA | 7.4A Ta | 56nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOB4S60L | Alpha & Omega Semiconductor Inc. | $4.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | yes | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 83W | 1 | R-PSSO-G2 | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 83W Tc | 4A | 0.9Ohm | 77 mJ | N-Channel | 263pF @ 100V | 900m Ω @ 2A, 10V | 4.1V @ 250μA | 4A Tc | 6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD85P04P4L06ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd85p04p4l06atma1-datasheets-0222.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 88W | 1 | R-PSSO-G2 | 17 ns | 10ns | 39 ns | 62 ns | 85A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 88W Tc | 0.0064Ohm | P-Channel | 6580pF @ 25V | 6.4m Ω @ 85A, 10V | 2.2V @ 150μA | 85A Tc | 104nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| SQJ456EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj456ept2ge3-datasheets-0229.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 100V | 83W Tc | N-Channel | 3342pF @ 25V | 26mOhm @ 9.3A, 10V | 3.5V @ 250μA | 32A Tc | 63nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI7S65 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-251-3 Stub Leads, IPak | 16 Weeks | 7A | 650V | 89W Tc | N-Channel | 434pF @ 100V | 650m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 9.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0393DPA-00#J5A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0393dpa00j5a-datasheets-0236.pdf | 8-PowerWDFN | Lead Free | 16 Weeks | EAR99 | FET General Purpose Powers | 40A | Single | 30V | 40W Tc | N-Channel | 3270pF @ 10V | 4.3m Ω @ 20A, 10V | 40A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ096N10LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz096n10ls5atma1-datasheets-0172.pdf | 8-PowerTDFN | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 11A | 160A | 0.0096Ohm | 82 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R660CFDBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd65r660cfdbtma1-datasheets-0178.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 16 Weeks | no | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 62.5W | 1 | Not Qualified | R-PSSO-G2 | 9 ns | 8ns | 10 ns | 40 ns | 6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | 6A | 0.66Ohm | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6637TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6637trpbf-datasheets-0112.pdf | 30V | 14A | DirectFET™ Isometric MP | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 12 ns | 15ns | 3.8 ns | 14 ns | 14mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.3W Ta 42W Tc | 0.0077Ohm | 30V | N-Channel | 1330pF @ 15V | 7.7m Ω @ 14A, 10V | 2.35V @ 250μA | 14A Ta 59A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STMFS5C628NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI7446GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | 17 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 80A | 40V | 40.5W Tc | N-Channel | 3199pF @ 25V | 3.3m Ω @ 48A, 10V | 3.9V @ 100μA | 80A Tc | 90nC @ 10V | 10V | ±20V |
