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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR690DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | PowerPAK® SO-8 | 1.17mm | 14 Weeks | S17-0173-Single | 1 | 6.25W | 150°C | PowerPAK® SO-8 | 10 ns | 19 ns | 8.4A | 20V | 200V | 104W Tc | 28.5mOhm | 200V | N-Channel | 1935pF @ 100V | 35mOhm @ 20A, 10V | 4V @ 250μA | 34.4A Tc | 48nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S214ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd50n06s214atma2-datasheets-0455.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | AEC-Q101 | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 136W | 1 | R-PSSO-G2 | 13 ns | 29ns | 19 ns | 30 ns | 50A | 20V | 55V | SILICON | DRAIN | 136W Tc | 200A | 0.0144Ohm | 240 mJ | 55V | N-Channel | 1485pF @ 25V | 14.4m Ω @ 32A, 10V | 4V @ 80μA | 50A Tc | 52nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TK46E08N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 80A | 80V | 103W Tc | N-Channel | 2500pF @ 40V | 8.4m Ω @ 23A, 10V | 4V @ 500μA | 80A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF9N70 | Alpha & Omega Semiconductor Inc. | $6.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 9A | 700V | 28W Tc | N-Channel | 1630pF @ 25V | 1.2 Ω @ 4.5A, 10V | 4.5V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD6N60CTM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqd6n60ctmws-datasheets-0393.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | 80W | 1 | 45ns | 45 ns | 45 ns | 4A | 30V | 80W Tc | 600V | N-Channel | 810pF @ 25V | 2 Ω @ 2A, 10V | 4V @ 250μA | 4A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3110ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr3110ztrpbf-datasheets-8802.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | SILICON | DRAIN | SWITCHING | 140W Tc | TO-252AA | 250A | 100V | N-Channel | 3980pF @ 25V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| SIHF9630STRL-GE3 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr9014ge3-datasheets-5746.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 3 | Single | D2PAK (TO-263) | 700pF | 12 ns | 28 ns | 4A | 20V | 200V | 3W Ta 74W Tc | 800mOhm | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfz34nstrlpbf-datasheets-4174.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 68W Tc | 29A | 100A | 0.04Ohm | 130 mJ | N-Channel | 700pF @ 25V | 40m Ω @ 16A, 10V | 4V @ 250μA | 29A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF634STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634strrpbf-datasheets-9861.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 2 | 12 Weeks | 1.437803g | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3.1W | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 32A | 450mOhm | 300 mJ | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMYS2D1N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 33 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0606N3-G-P002 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/microchiptechnology-tp0606n3g-datasheets-9666.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | yes | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 10 ns | 15ns | 15 ns | 20 ns | 320mA | 20V | SILICON | SWITCHING | 60V | 1W Tc | 0.32A | 35 pF | -60V | P-Channel | 150pF @ 25V | 3.5 Ω @ 750mA, 10V | 2.4V @ 1mA | 320mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4931NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4931nt1g-datasheets-8725.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 246A | SILICON | DRAIN | SWITCHING | 30V | 30V | 950mW Ta | 23A | N-Channel | 9821pF @ 15V | 1.1m Ω @ 30A, 10V | 2.2V @ 250μA | 23A Ta 246A Tc | 128nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOT14N50FD | Alpha & Omega Semiconductor Inc. | $7.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot14n50fd-datasheets-8926.pdf | TO-220-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 14A | Single | 500V | 278W Tc | N-Channel | 2010pF @ 25V | 470m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7159DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7159dpt1ge3-datasheets-0367.pdf | PowerPAK® SO-8 | 5 | 21 Weeks | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 40 | 5W | 1 | Other Transistors | Not Qualified | R-XDSO-C5 | 14ns | 11 ns | 40 ns | 29A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 5.4W Ta 83W Tc | 20.7A | 60A | 0.007Ohm | 20 mJ | -25V | P-Channel | 5170pF @ 15V | 7m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 180nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| NTD110N02RST4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK03M3DPA-00#J5A | Renesas Electronics America | $0.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-rjk03m3dpa00j5a-datasheets-0370.pdf | 8-WFDFN Exposed Pad | Lead Free | 16 Weeks | yes | NOT SPECIFIED | 8 | NOT SPECIFIED | 40A | 30V | 35W Tc | N-Channel | 3010pF @ 10V | 3.9m Ω @ 20A, 10V | 40A Ta | 15.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40030E_GE3 | Vishay Siliconix | $4.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40030ege3-datasheets-0333.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 40V | N-Channel | 65nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB12N50L | Alpha & Omega Semiconductor Inc. | $5.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | FET General Purpose Power | 12A | Single | 500V | 250W Tc | N-Channel | 1633pF @ 25V | 520m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMYS4D1N06CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmys4d1n06cltwg-datasheets-0378.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.7W Ta 79W Tc | N-Channel | 2200pF @ 25V | 4m Ω @ 50A, 10V | 2V @ 80μA | 22A Ta 100A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R520E6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ840EP-T1_GE3 | Vishay Siliconix | $5.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj840ept1ge3-datasheets-0380.pdf | PowerPAK® SO-8 | Lead Free | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | PowerPAK® SO-8 | 1.9nF | 11 ns | 11ns | 17 ns | 28 ns | 30A | 20V | 30V | 1.7V | 46W Tc | 9.3mOhm | 30V | N-Channel | 1900pF @ 15V | 1.7 V | 9.3mOhm @ 10.3A, 10V | 2.2V @ 250μA | 30A Tc | 38nC @ 10V | 9.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ021N04LS6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 6 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz021n04ls6atma1-datasheets-0384.pdf | 8-PowerTDFN | 18 Weeks | 40V | 2.5W Ta 83W Tc | N-Channel | 2700pF @ 20V | 2.1m Ω @ 20A, 10V | 2.3V @ 250μA | 25A Ta 40A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR850DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir850dpt1ge3-datasheets-0279.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 25 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | Single | NOT SPECIFIED | 4.8W | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 20 ns | 20ns | 11 ns | 30 ns | 30A | 20V | SILICON | DRAIN | 3V | 4.8W Ta 41.7W Tc | 70A | 0.007Ohm | 25V | N-Channel | 1120pF @ 15V | 7m Ω @ 20A, 10V | 3V @ 250μA | 30A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF614PBF | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf614pbf-datasheets-0341.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 36W | 1 | TO-220AB | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.7A | 20V | 250V | 4V | 36W Tc | 2Ohm | N-Channel | 140pF @ 25V | 4 V | 2Ohm @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S4L05ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb80n06s4l05atma2-datasheets-0347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | 2 | 16 Weeks | 1.946308g | 3 | yes | EAR99 | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 107W | 1 | R-PSSO-G2 | 14 ns | 4ns | 13 ns | 80 ns | 80A | 16V | 60V | SILICON | DRAIN | 107W Tc | 0.0048Ohm | 60V | N-Channel | 8180pF @ 25V | 5.1m Ω @ 80A, 10V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| DI9405T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-di9405t-datasheets-9556.pdf | -20V | -4.3A | SMD/SMT | Contains Lead | 8 | 2.5W | 1.425nF | 4.3A | 20V | 100 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C442NLTT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c442nltt3g-datasheets-0719.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 25V | 2.5m Ω @ 50A, 10V | 2V @ 250μA | 28A Ta 130A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6522 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 200A | 25V | 7.3W Ta 83W Tc | N-Channel | 7036pF @ 15V | 0.95m Ω @ 20A, 10V | 2V @ 250μA | 71A Ta 200A Tc | 145nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPS1100DR | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.58mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | Gold | No | e4 | DUAL | GULL WING | 260 | TPS1100 | 8 | 791mW | 1 | Other Transistors | 4.5 ns | 10ns | 10 ns | 13 ns | 1.6A | 2V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 791mW Ta | MS-012AA | 0.4Ohm | 15V | P-Channel | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 1.6A Ta | 5.45nC @ 10V | 2.7V 10V | +2V, -15V | ||||||||||||||||||||||||||||||||||||||||||
| AOWF10N60 | Alpha & Omega Semiconductor Inc. | $5.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | TO-262F | 1.6nF | 10A | 600V | 25W Tc | N-Channel | 1600pF @ 25V | 750mOhm @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 40nC @ 10V | 750 mΩ | 10V | ±30V |
