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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQPF4N90CT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqpf4n90c-datasheets-8750.pdf | TO-220-3 Full Pack | Lead Free | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 47W | 1 | FET General Purpose Power | 25 ns | 50ns | 35 ns | 40 ns | 4A | 30V | 900V | 47W Tc | 4A | N-Channel | 960pF @ 25V | 4.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3709pbf-datasheets-7962.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 120W | 1 | R-PSSO-G2 | 11 ns | 171ns | 9.2 ns | 21 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 120W Tc | 75A | 0.009Ohm | 30V | N-Channel | 2672pF @ 16V | 20 V | 9m Ω @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| ZVP0545ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvp0545a-datasheets-3335.pdf | -450V | -45mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | R-PSIP-W3 | 10 ns | 15ns | 15 ns | 15 ns | 45mA | 20V | SILICON | SWITCHING | 450V | 700mW Ta | 0.045A | P-Channel | 120pF @ 25V | 150 Ω @ 50mA, 10V | 4.5V @ 1mA | 45mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTD110N02RST4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK03M3DPA-00#J5A | Renesas Electronics America | $0.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-rjk03m3dpa00j5a-datasheets-0370.pdf | 8-WFDFN Exposed Pad | Lead Free | 16 Weeks | yes | NOT SPECIFIED | 8 | NOT SPECIFIED | 40A | 30V | 35W Tc | N-Channel | 3010pF @ 10V | 3.9m Ω @ 20A, 10V | 40A Ta | 15.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40030E_GE3 | Vishay Siliconix | $4.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40030ege3-datasheets-0333.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 40V | N-Channel | 65nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB12N50L | Alpha & Omega Semiconductor Inc. | $5.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | FET General Purpose Power | 12A | Single | 500V | 250W Tc | N-Channel | 1633pF @ 25V | 520m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMYS4D1N06CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmys4d1n06cltwg-datasheets-0378.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.7W Ta 79W Tc | N-Channel | 2200pF @ 25V | 4m Ω @ 50A, 10V | 2V @ 80μA | 22A Ta 100A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R520E6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ840EP-T1_GE3 | Vishay Siliconix | $5.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj840ept1ge3-datasheets-0380.pdf | PowerPAK® SO-8 | Lead Free | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | PowerPAK® SO-8 | 1.9nF | 11 ns | 11ns | 17 ns | 28 ns | 30A | 20V | 30V | 1.7V | 46W Tc | 9.3mOhm | 30V | N-Channel | 1900pF @ 15V | 1.7 V | 9.3mOhm @ 10.3A, 10V | 2.2V @ 250μA | 30A Tc | 38nC @ 10V | 9.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSZ021N04LS6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 6 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz021n04ls6atma1-datasheets-0384.pdf | 8-PowerTDFN | 18 Weeks | 40V | 2.5W Ta 83W Tc | N-Channel | 2700pF @ 20V | 2.1m Ω @ 20A, 10V | 2.3V @ 250μA | 25A Ta 40A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF9N70 | Alpha & Omega Semiconductor Inc. | $6.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 9A | 700V | 28W Tc | N-Channel | 1630pF @ 25V | 1.2 Ω @ 4.5A, 10V | 4.5V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD6N60CTM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqd6n60ctmws-datasheets-0393.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | 80W | 1 | 45ns | 45 ns | 45 ns | 4A | 30V | 80W Tc | 600V | N-Channel | 810pF @ 25V | 2 Ω @ 2A, 10V | 4V @ 250μA | 4A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3110ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr3110ztrpbf-datasheets-8802.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | SILICON | DRAIN | SWITCHING | 140W Tc | TO-252AA | 250A | 100V | N-Channel | 3980pF @ 25V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| SIHF9630STRL-GE3 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr9014ge3-datasheets-5746.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 3 | Single | D2PAK (TO-263) | 700pF | 12 ns | 28 ns | 4A | 20V | 200V | 3W Ta 74W Tc | 800mOhm | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfz34nstrlpbf-datasheets-4174.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 68W Tc | 29A | 100A | 0.04Ohm | 130 mJ | N-Channel | 700pF @ 25V | 40m Ω @ 16A, 10V | 4V @ 250μA | 29A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF634STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634strrpbf-datasheets-9861.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 2 | 12 Weeks | 1.437803g | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3.1W | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 32A | 450mOhm | 300 mJ | |||||||||||||||||||||||||||||||||||||||||
| NTMYS2D1N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 33 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0606N3-G-P002 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/microchiptechnology-tp0606n3g-datasheets-9666.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | yes | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 10 ns | 15ns | 15 ns | 20 ns | 320mA | 20V | SILICON | SWITCHING | 60V | 1W Tc | 0.32A | 35 pF | -60V | P-Channel | 150pF @ 25V | 3.5 Ω @ 750mA, 10V | 2.4V @ 1mA | 320mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4931NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4931nt1g-datasheets-8725.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 246A | SILICON | DRAIN | SWITCHING | 30V | 30V | 950mW Ta | 23A | N-Channel | 9821pF @ 15V | 1.1m Ω @ 30A, 10V | 2.2V @ 250μA | 23A Ta 246A Tc | 128nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOT14N50FD | Alpha & Omega Semiconductor Inc. | $7.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot14n50fd-datasheets-8926.pdf | TO-220-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 14A | Single | 500V | 278W Tc | N-Channel | 2010pF @ 25V | 470m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7159DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7159dpt1ge3-datasheets-0367.pdf | PowerPAK® SO-8 | 5 | 21 Weeks | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 40 | 5W | 1 | Other Transistors | Not Qualified | R-XDSO-C5 | 14ns | 11 ns | 40 ns | 29A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 5.4W Ta 83W Tc | 20.7A | 60A | 0.007Ohm | 20 mJ | -25V | P-Channel | 5170pF @ 15V | 7m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 180nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||
| IPB80N06S208ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp80n06s208aksa2-datasheets-9281.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | No | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 14 ns | 15ns | 14 ns | 32 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 215W Tc | 0.0077Ohm | 450 mJ | N-Channel | 2860pF @ 25V | 7.7m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOWF11N60 | Alpha & Omega Semiconductor Inc. | $5.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 11A | 600V | 27.8W Tc | N-Channel | 1990pF @ 25V | 650m Ω @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N65X2 | IXYS | $1.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 8A | 650V | 150W Tc | N-Channel | 800pF @ 25V | 500m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0106N3-G-P013 | Microchip Technology | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0106n3g-datasheets-7636.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 6 Weeks | 453.59237mg | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | BOTTOM | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-T3 | 2 ns | 3ns | 3 ns | 6 ns | 350mA | 20V | SILICON | SWITCHING | 1W Tc | 0.35A | 3Ohm | 8 pF | 60V | N-Channel | 60pF @ 25V | 3 Ω @ 500mA, 10V | 2V @ 500μA | 350mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AOTF12N50 | Alpha & Omega Semiconductor Inc. | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 50W | 1 | FET General Purpose Power | 12A | 30V | Single | 500V | 50W Tc | N-Channel | 1633pF @ 25V | 520m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT12N50 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 250W | 1 | FET General Purpose Power | 12A | 30V | Single | 500V | 250W Tc | N-Channel | 1633pF @ 25V | 520m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0106N3-G-P003 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0106n3g-datasheets-7636.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1W | 1 | 2 ns | 3ns | 3 ns | 6 ns | 350mA | 2V | SILICON | SWITCHING | 1W Tc | 3Ohm | 8 pF | 60V | N-Channel | 60pF @ 25V | 3 Ω @ 500mA, 10V | 2V @ 500μA | 350mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7114DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7114dnt1e3-datasheets-7743.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 45 ns | 18.3A | 20V | SILICON | DRAIN | SWITCHING | 30V | 1V | 1.5W Ta | 60A | 0.0075Ohm | 42 mJ | N-Channel | 7.5m Ω @ 18.3A, 10V | 3V @ 250μA | 11.7A Ta | 19nC @ 4.5V | 4.5V 10V | ±20V |
