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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIDR220DP-T1-GE3 | Vishay Siliconix | $2.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/siliconlabs-ezr32lg330f256r55gc0-datasheets-6189.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 25V | 6.25W Ta 125W Tc | N-Channel | 1085pF @ 10V | 5.8mOhm @ 20A, 10V | 2.1V @ 250μA | 87.7A Ta 100A Tc | 200nC @ 10V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL86366-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSFN | 17 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 220A | 80V | 300W Tj | N-Channel | 6320pF @ 40V | 3m Ω @ 80A, 10V | 4V @ 250μA | 220A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF400N80ZL1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf400n80zl1-datasheets-9160.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | 2.27g | 400mOhm | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 20 ns | 12ns | 2.6 ns | 51 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 35.7W Tc | TO-220AB | 33A | 339 mJ | 800V | N-Channel | 2350pF @ 100V | 400m Ω @ 5.5A, 10V | 4.5V @ 1.1mA | 11A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF730STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf730spbf-datasheets-3742.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 12 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 3 | 1 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 15ns | 14 ns | 38 ns | 5.5A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 74W Tc | 22A | 1Ohm | 290 mJ | 400V | N-Channel | 700pF @ 25V | 1 Ω @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPA040N06NXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipa040n06nxksa1-datasheets-9179.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 16ns | 8 ns | 33 ns | 69A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 36W Tc | TO-220AB | 276A | 0.004Ohm | 77 mJ | N-Channel | 3375pF @ 30V | 4m Ω @ 69A, 10V | 3.3V @ 50μA | 69A Tc | 44nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP120N10S405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb120n10s405atma1-datasheets-8791.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15 ns | 10ns | 35 ns | 30 ns | 120A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 190W Tc | TO-220AB | 480A | N-Channel | 6540pF @ 25V | 5.3m Ω @ 100A, 10V | 3.5V @ 120μA | 120A Tc | 91nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRF1010Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1010z-datasheets-9189.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 150ns | 92 ns | 36 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 2V | 140W Tc | 75A | 0.0075Ohm | 55V | N-Channel | 2840pF @ 25V | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | ||||||||||||||||||||||||||||||||||||||
| AUIRFZ44VZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfz44vzstrl-datasheets-9194.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 92W | 1 | R-PSSO-G2 | 14 ns | 62ns | 38 ns | 35 ns | 57A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 92W Tc | 0.012Ohm | 60V | N-Channel | 1690pF @ 25V | 12m Ω @ 34A, 10V | 4V @ 250μA | 57A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDPF51N25YDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdp51n25-datasheets-3472.pdf | TO-220-3 Full Pack, Formed Leads | 4 Weeks | 2.565g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 38W | FET General Purpose Power | 62 ns | 465ns | 130 ns | 98 ns | 51A | 30V | 38W Tc | 250V | N-Channel | 3410pF @ 25V | 60m Ω @ 25.5A, 10V | 5V @ 250μA | 51A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C410NLTT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c410nltt3g-datasheets-9207.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 167W Tc | 330A | 900A | 0.0012Ohm | 706 mJ | N-Channel | 8862pF @ 25V | 0.9m Ω @ 50A, 10V | 2V @ 250μA | 50A Ta 330A Tc | 143nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R180C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r180c7atma1-datasheets-9210.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 13A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 68W Tc | 45A | 0.18Ohm | 53 mJ | N-Channel | 1080pF @ 400V | 180m Ω @ 5.3A, 10V | 4V @ 260μA | 13A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R6N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 100W Tc | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 4.5V @ 100μA | 1.6A Tj | 27nC @ 5V | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC14N80C3X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB90N06S4L04ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb90n06s4l04atma2-datasheets-9134.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | Lead Free | 2 | 16 Weeks | 1.946308g | 3 | yes | EAR99 | not_compliant | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 21 ns | 6ns | 20 ns | 140 ns | 90A | 16V | 60V | SILICON | DRAIN | 150W Tc | N-Channel | 13000pF @ 25V | 3.7m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| BUK7J1R0-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7j1r040hx-datasheets-9089.pdf | 4 | 16 Weeks | compliant | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | 4 | 175°C | -55°C | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 220A | 600A | 0.001Ohm | 242 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN80H2D0SCTI | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn80h2d0scti-datasheets-9140.pdf | TO-220-3 Full Pack, Isolated Tab | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 800V | 41W Tc | N-Channel | 1253pF @ 25V | 2 Ω @ 2.5A, 10V | 4V @ 250μA | 7A Tc | 35.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF540ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-auirf540z-datasheets-7586.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 92W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 51ns | 39 ns | 43 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 92W Tc | 140A | 0.0265Ohm | 100V | N-Channel | 1770pF @ 25V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB160N04S4LH1ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb160n04s4lh1atma1-datasheets-9096.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | 7 | yes | EAR99 | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 16 ns | 20ns | 65 ns | 70 ns | 160A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 167W Tc | 640A | 0.0015Ohm | 400 mJ | N-Channel | 14950pF @ 25V | 1.5m Ω @ 100A, 10V | 2.2V @ 110μA | 160A Tc | 190nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||
| BUK9J0R9-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R800C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r800c3xksa2-datasheets-9101.pdf | TO-220-3 | 18 Weeks | 900V | 104W Tc | N-Channel | 1100pF @ 100V | 800m Ω @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4005SCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth4005sct-datasheets-9102.pdf | TO-220-3 | 3 | 24 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 2.8W Ta 125W Tc | TO-220AB | 160A | 0.0047Ohm | 52.8 mJ | N-Channel | 3062pF @ 20V | 4.7m Ω @ 50A, 10V | 4V @ 250μA | 100A Tc | 49.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMNH6008SCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmnh6008sct-datasheets-9106.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 210W Tc | TO-220AB | 200A | 0.008Ohm | 190 mJ | N-Channel | 2596pF @ 30V | 8m Ω @ 20A, 10V | 4V @ 250μA | 130A Tc | 21nC @ 10V | 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTY64N055T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 55V | 130W Tc | N-Channel | 1420pF @ 25V | 13m Ω @ 32A, 10V | 4V @ 25μA | 64A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN1206L-G-P002 | Microchip Technology | $1.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn1206lg-datasheets-1532.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 6 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 8 ns | 8ns | 12 ns | 18 ns | 230mA | 30V | SILICON | SWITCHING | 1W Tc | 0.23A | 6Ohm | 20 pF | 120V | N-Channel | 125pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | 230mA Tj | 2.5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN030-150B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/nexperiausainc-psmn030150b118-datasheets-8894.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | 3 | No | Single | 250W | D2PAK | 3.68nF | 18 ns | 71ns | 76 ns | 97 ns | 55.5A | 20V | 150V | 150V | 250W Tc | 30mOhm | 150V | N-Channel | 3680pF @ 25V | 30mOhm @ 25A, 10V | 4V @ 1mA | 55.5A Tc | 98nC @ 10V | 30 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP70N12S311AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb70n12s311atma1-datasheets-7908.pdf | 3 | 14 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 70A | 280A | 0.0116Ohm | 410 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3A65DA(STA4,QM) | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 490pF | 18ns | 8 ns | 2.5A | 30V | 650V | 35W Tc | N-Channel | 490pF @ 25V | 2.51Ohm @ 1.3A, 10V | 4.4V @ 1mA | 2.5A Ta | 11nC @ 10V | 2.51 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5A140PLZT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs5a140plzwft3g-datasheets-9034.pdf | 8-PowerTDFN, 5 Leads | 5 | 30 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 200W Tc | 140A | 560A | 7.2Ohm | 420 mJ | P-Channel | 7400pF @ 20V | 4.2m Ω @ 50A, 10V | 2.6V @ 1mA | 20A Ta 140A Tc | 136nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C612NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c612nlt3g-datasheets-8491.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 235A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.8W Ta 167W Tc | 900A | 0.0015Ohm | 451 mJ | N-Channel | 6660pF @ 25V | 1.5m Ω @ 50A, 10V | 2V @ 250μA | 36A Ta 235A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSC014N06LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™, StrongIRFET™ | Surface Mount | MOSFET (Metal Oxide) | 8-PowerTDFN | 7 Weeks | 60V |
