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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQP8N90C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp8n90c-datasheets-9050.pdf | 900V | 6.3A | TO-220-3 | Lead Free | 3 | 5 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 260 | Single | 171W | 1 | FET General Purpose Power | 40 ns | 110ns | 70 ns | 70 ns | 6.3A | 30V | SILICON | SWITCHING | 171W Tc | TO-220AB | 25A | 850 mJ | 900V | N-Channel | 2080pF @ 25V | 1.9 Ω @ 3.15A, 10V | 5V @ 250μA | 6.3A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| R5007ANJTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Powers | R-PSSO-G2 | 20 ns | 22ns | 25 ns | 50 ns | 7A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 40W Tc | 7A | 28A | N-Channel | 500pF @ 25V | 1.05 Ω @ 3.5A, 10V | 4.5V @ 1mA | 7A Ta | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FCPF190N60-F152 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf190n60f152-datasheets-9060.pdf | TO-220-3 Full Pack | 3 | 14 Weeks | 2.565008g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | 1 | Single | 1 | 20 ns | 10ns | 5 ns | 64 ns | 20.2A | 30V | SILICON | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 60.6A | 400 mJ | 600V | N-Channel | 2950pF @ 25V | 199m Ω @ 10A, 10V | 3.5V @ 250μA | 20.2A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NVMFS5C410NWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c410naft1g-datasheets-8527.pdf | 8-PowerTDFN, 5 Leads | 44 Weeks | 40V | 3.9W Ta 166W Tc | N-Channel | 6100pF @ 25V | 0.92m Ω @ 50A, 10V | 3.5V @ 250μA | 46A Ta 300A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB16AN08A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdb16an08a0-datasheets-8908.pdf | 75V | 58A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 135W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 82ns | 30 ns | 28 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 135W Tc | 9A | 75V | N-Channel | 1857pF @ 25V | 16m Ω @ 58A, 10V | 4V @ 250μA | 9A Ta 58A Tc | 42nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPB65R225C7ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r225c7atma2-datasheets-8765.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 63W Tc | N-Channel | 996pF @ 400V | 225m Ω @ 4.8A, 10V | 4V @ 240μA | 11A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4451DY-T1-E3 | Vishay Siliconix | $0.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4451dyt1e3-datasheets-9087.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8.25MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | Other Transistors | 55 ns | 125ns | 125 ns | 315 ns | 10A | 8V | SILICON | SWITCHING | 12V | 1.5W Ta | P-Channel | 8.25m Ω @ 14A, 4.5V | 800mV @ 850μA | 10A Ta | 120nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| IPP70N10S3L12AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp70n10s3l12aksa1-datasheets-8992.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 125W Tc | TO-220AB | 70A | 280A | 0.0123Ohm | 154 mJ | N-Channel | 5550pF @ 25V | 12.1m Ω @ 70A, 10V | 2.4V @ 83μA | 70A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FCB199N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fcb199n65s3-datasheets-8996.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 1.31247g | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | GULL WING | 245 | Single | 30 | 1 | R-PSSO-G2 | SILICON | DRAIN | SWITCHING | 650V | 650V | 98W Tc | 14A | 35A | 0.199Ohm | 76 mJ | N-Channel | 1225pF @ 400V | 199m Ω @ 7A, 10V | 4.5V @ 1.4mA | 14A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPB180N03S4L01ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb180n03s4l01atma1-datasheets-9002.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | 7 | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 8 ns | 5ns | 23 ns | 57 ns | 180A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 188W Tc | 0.00105Ohm | 530 mJ | N-Channel | 17600pF @ 25V | 1.05m Ω @ 100A, 10V | 2.2V @ 140μA | 180A Tc | 239nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| TK5A53D(STA4,Q,M) | Toshiba Semiconductor and Storage | $6.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 540pF | 18ns | 8 ns | 5A | 30V | 525V | 35W Tc | N-Channel | 540pF @ 25V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 1.5 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG10N60SCT | Diodes Incorporated | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg10n60sct-datasheets-9018.pdf | TO-220-3 | 6 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 600V | 178W Tc | N-Channel | 1587pF @ 16V | 750m Ω @ 5A, 10V | 4V @ 250μA | 12A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5A140PLZWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs5a140plzwft3g-datasheets-9034.pdf | 8-PowerTDFN, 5 Leads | 5 | 40 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 200W Tc | 140A | 560A | 7.2Ohm | 420 mJ | P-Channel | 7400pF @ 20V | 4.2m Ω @ 50A, 10V | 2.6V @ 1mA | 20A Ta 140A Tc | 136nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp80n06s2l07aksa2-datasheets-9037.pdf | TO-220-3 | 3 | 10 Weeks | 3 | yes | LOGIC LEVEL COMPATIBLE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 80A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 210W Tc | TO-220AB | 0.01Ohm | 450 mJ | N-Channel | 3160pF @ 25V | 7m Ω @ 60A, 10V | 2V @ 150μA | 80A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R250E6XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd65r250e6xtma1-datasheets-8966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 208W | 1 | R-PSSO-G2 | 11 ns | 9ns | 76 ns | 16.1A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 208W Tc | 46A | 0.25Ohm | 290 mJ | 700V | N-Channel | 950pF @ 1000V | 250m Ω @ 4.4A, 10V | 3.5V @ 400μA | 16.1A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTMFS5H615NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5h615nlt1g-datasheets-9048.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.2W Ta 139W Tc | N-Channel | 4860pF @ 30V | 1.8m Ω @ 49A, 10V | 2V @ 250μA | 28A Ta 185A Tc | 63nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S207AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipi80n06s207aksa2-datasheets-8954.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | SINGLE | 1 | 16 ns | 37ns | 36 ns | 61 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 250W Tc | 0.0066Ohm | N-Channel | 3400pF @ 25V | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOB15S60L | Alpha & Omega Semiconductor Inc. | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 15A | 600V | 208W Tc | N-Channel | 717pF @ 100V | 290m Ω @ 7.5A, 10V | 3.8V @ 250μA | 15A Tc | 15.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86101E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | 8-PowerTDFN | 12 Weeks | 100V | 2.5W Ta 104W Tc | N-Channel | 3000pF @ 50V | 8m Ω @ 13A, 10V | 4V @ 250μA | 12.4A Ta 60A Tc | 55nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA029N06NM5SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa029n06nm5sxksa1-datasheets-8965.pdf | TO-220-3 Full Pack | 13 Weeks | 60V | 38W Tc | N-Channel | 5300pF @ 30V | 2.9m Ω @ 87A, 10V | 3.3V @ 36μA | 87A Tc | 74nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4456DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4456dyt1e3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.5W | 1 | FET General Purpose Power | 3.3A | 20V | SILICON | 40V | 40V | 3.5W Ta 7.8W Tc | 23A | 70A | N-Channel | 5670pF @ 20V | 2.8 V | 3.8m Ω @ 20A, 10V | 2.8V @ 250μA | 33A Tc | 122nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB140N08S404ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb140n08s404atma1-datasheets-8984.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | 7 | yes | EAR99 | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 18 ns | 10ns | 35 ns | 28 ns | 140A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 161W Tc | 560A | 0.0042Ohm | 212 mJ | N-Channel | 5500pF @ 25V | 4.2m Ω @ 100A, 10V | 4V @ 100μA | 140A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFSL7734PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7734trlpbf-datasheets-6080.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 12 Weeks | 2.084002g | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 20 ns | 123ns | 100 ns | 124 ns | 183A | 20V | 75V | 290W Tc | N-Channel | 10150pF @ 25V | 3.5m Ω @ 100A, 10V | 3.7V @ 250μA | 183A Tc | 270nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R3-80ES,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn4r380es127-datasheets-8989.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 20 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 306W | 1 | 38 ns | 29ns | 33 ns | 94 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 306W Tc | 688A | 676 mJ | 80V | N-Channel | 8161pF @ 40V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 111nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTMJS1D3N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmjs1d3n04ctwg-datasheets-8922.pdf | 8-PowerSMD, Gull Wing | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 128W Tc | N-Channel | 4300pF @ 25V | 1.3m Ω @ 50A, 10V | 3.5V @ 170μA | 41A Ta 235A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB3672-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb3672f085-datasheets-8873.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 2 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 120W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 11 ns | 59ns | 44 ns | 26 ns | 7.2A | 20V | SILICON | DRAIN | SWITCHING | 120W Tc | 44A | 0.047Ohm | 100V | N-Channel | 1710pF @ 25V | 28m Ω @ 44A, 10V | 4V @ 250μA | 7.2A Ta 44A Tc | 31nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NVMFS5A160PLZWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs5a160plzwft3g-datasheets-8931.pdf | 8-PowerTDFN, 5 Leads | 5 | 39 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 30 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.8W Ta 200W Tc | 400A | 0.0105Ohm | 335 mJ | P-Channel | 7700pF @ 20V | 7.7m Ω @ 50A, 10V | 2.6V @ 1mA | 15A Ta 100A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPA90R800C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa90r800c3xksa2-datasheets-8933.pdf | TO-220-3 Full Pack | 18 Weeks | 900V | 33W Tc | N-Channel | 1100pF @ 100V | 800m Ω @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDM2208-800FP SL PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cdm2208800fpslpbfree-datasheets-8934.pdf | TO-220-3 Full Pack | 12 Weeks | 800V | 57W Tc | N-Channel | 1110pF @ 25V | 1.6 Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 24.45nC @ 10V | 10V | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPI07N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa07n60c3xksa1-datasheets-3567.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 8 Weeks | PG-TO262-3-1 | 600V | 83W Tc | N-Channel | 790pF @ 25V | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 10V | ±20V |
