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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPA029N06NM5SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa029n06nm5sxksa1-datasheets-8965.pdf | TO-220-3 Full Pack | 13 Weeks | 60V | 38W Tc | N-Channel | 5300pF @ 30V | 2.9m Ω @ 87A, 10V | 3.3V @ 36μA | 87A Tc | 74nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4456DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4456dyt1e3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.5W | 1 | FET General Purpose Power | 3.3A | 20V | SILICON | 40V | 40V | 3.5W Ta 7.8W Tc | 23A | 70A | N-Channel | 5670pF @ 20V | 2.8 V | 3.8m Ω @ 20A, 10V | 2.8V @ 250μA | 33A Tc | 122nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB140N08S404ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb140n08s404atma1-datasheets-8984.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | 7 | yes | EAR99 | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 18 ns | 10ns | 35 ns | 28 ns | 140A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 161W Tc | 560A | 0.0042Ohm | 212 mJ | N-Channel | 5500pF @ 25V | 4.2m Ω @ 100A, 10V | 4V @ 100μA | 140A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB80N04S303ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipb80n04s303atma1-datasheets-8734.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 188W Tc | 80A | 320A | 0.0035Ohm | 526 mJ | N-Channel | 7300pF @ 25V | 3.2m Ω @ 80A, 10V | 4V @ 120μA | 80A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK6A53D(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 600pF | 18ns | 8 ns | 6A | 30V | 525V | 35W Tc | N-Channel | 600pF @ 25V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 6A Ta | 12nC @ 10V | 1.3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R280E6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R0-60PSRQ | Nexperia USA Inc. | $6.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn2r060psrq-datasheets-8824.pdf | TO-220-3 | 12 Weeks | TO-220AB | 13.5nF | 120A | 60V | 338W Tc | N-Channel | 13500pF @ 30V | 2.2mOhm @ 25A, 10V | 4V @ 1mA | 120A Tc | 192nC @ 10V | 2.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIB41N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfb41n15dpbf-datasheets-1190.pdf | 150V | 41A | TO-220-3 Full Pack | 10.6172mm | 16.12mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 40 | 200W | 1 | FET General Purpose Power | 16 ns | 63ns | 14 ns | 25 ns | 41A | 30V | 150V | SILICON | ISOLATED | SWITCHING | 5.5V | 48W Tc | TO-220AB | 0.045Ohm | 470 mJ | 150V | N-Channel | 2520pF @ 25V | 5.5 V | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 41A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| BUK661R6-30C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk661r630c118-datasheets-8813.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | not_compliant | 3 | 30V | 306W Tc | N-Channel | 14964pF @ 25V | 1.6m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 229nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK2075DPA-00#J5A | Renesas Electronics America | $1.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk2075dpa00j5a-datasheets-8851.pdf | 8-PowerVDFN | 16 Weeks | yes | EAR99 | YES | NOT SPECIFIED | 8 | NOT SPECIFIED | FET General Purpose Power | Single | 200V | 65W Ta | 20A | N-Channel | 2200pF @ 25V | 69m Ω @ 10A, 10V | 20A Ta | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC7572S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc7572s-datasheets-8225.pdf | 8-PowerTDFN | 3.4mm | 1mm | 3.4mm | Lead Free | 5 | 10 Weeks | 32.13mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 52W | 1 | FET General Purpose Power | S-PDSO-N5 | 11 ns | 3.6ns | 3 ns | 26 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 2.3W Ta 52W Tc | MO-240BA | 22.5A | 25V | N-Channel | 2705pF @ 13V | 1.7 V | 3.15m Ω @ 22.5A, 10V | 3V @ 1mA | 22.5A Ta 40A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDMS015N04B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms015n04b-datasheets-8716.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 4 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 104W | 1 | FET General Purpose Power | R-PDSO-F5 | 34 ns | 24ns | 26 ns | 71 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 104W Tc | MO-240AA | 400A | 526 mJ | 40V | N-Channel | 8725pF @ 20V | 1.5m Ω @ 50A, 10V | 4V @ 250μA | 31.3A Ta 100A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF9620SPBF | Vishay Siliconix | $1.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9620spbf-datasheets-8880.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 350pF | 15 ns | 25ns | 15 ns | 20 ns | 3.5A | 20V | 200V | 3W Ta 40W Tc | 1.5Ohm | -200V | P-Channel | 350pF @ 25V | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 3.5A Tc | 22nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMT30M9LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 19 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 35W | 18ns | 8 ns | 55 ns | 7A | 30V | 35W Tc | 500V | N-Channel | 600pF @ 25V | 1.22 Ω @ 3.5A, 10V | 4.4V @ 1mA | 7A Ta | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7390DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7390dpt1ge3-datasheets-8712.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 9.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 7ns | 7 ns | 43 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 9A | 50A | N-Channel | 9.5m Ω @ 15A, 10V | 3V @ 250μA | 9A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| AUIRFR8405TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfu8405-datasheets-7653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 26 Weeks | EAR99 | YES | NOT SPECIFIED | IRFR8405 | NOT SPECIFIED | FET General Purpose Power | Single | 40V | 163W Tc | 100A | N-Channel | 5171pF @ 25V | 1.98m Ω @ 90A, 10V | 3.9V @ 100μA | 100A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7648M2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf7648m2tr-datasheets-8898.pdf | DirectFET™ Isometric M4 | 740μm | Lead Free | 5 | 16 Weeks | No SVHC | 9 | HIGH RELIABILITY | No | BOTTOM | 1 | 2.5W | 1 | FET General Purpose Power | 175°C | R-XBCC-N5 | 12 ns | 23ns | 14 ns | 19 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 2.5W Ta 63W Tc | 272A | 0.007Ohm | 70 mJ | 60V | N-Channel | 2170pF @ 25V | 7m Ω @ 41A, 10V | 4.9V @ 150μA | 14A Ta 68A Tc | 53nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQI27N25TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqi27n25tu-datasheets-8904.pdf | 250V | 25.5A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 4 Weeks | 2.084g | 110mOhm | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 3.13W | 1 | FET General Purpose Power | R-PSIP-T3 | 32 ns | 270ns | 120 ns | 80 ns | 25.5A | 30V | SILICON | SWITCHING | 3.13W Ta 180W Tc | 600 mJ | 250V | N-Channel | 2450pF @ 25V | 110m Ω @ 12.75A, 10V | 5V @ 250μA | 25.5A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTY32P05T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 50V | 83W Tc | P-Channel | 1975pF @ 25V | 39m Ω @ 16A, 10V | 4.5V @ 250μA | 32A Tc | 46nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU01N100D | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n100d-datasheets-0137.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 24 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.1W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 6ns | 6 ns | 30 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 1.1W Ta 25W Tc | 0.1A | 0.4A | 110Ohm | 1kV | N-Channel | 120pF @ 25V | 80 Ω @ 50mA, 0V | 5V @ 25μA | 100mA Tc | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF4905STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf4905strrpbf-datasheets-8724.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 170W Tc | 42A | 280A | 0.02Ohm | 140 mJ | P-Channel | 3500pF @ 25V | 20m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C612NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c612nlaft3g-datasheets-7806.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 3.8W Ta 167W Tc | N-Channel | 6660pF @ 25V | 1.36m Ω @ 50A, 10V | 2V @ 250μA | 38A Ta 250A Tc | 91nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF4104 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf4104-datasheets-8747.pdf | TO-220-3 | 10.6426mm | 9.017mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | Single | 140W | 1 | FET General Purpose Power | 16 ns | 130ns | 77 ns | 38 ns | 75A | 20V | SILICON | SWITCHING | 2V | 140W Tc | TO-220AB | 470A | 0.0055Ohm | 220 mJ | 40V | N-Channel | 3000pF @ 25V | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQI7N80TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqi7n80tu-datasheets-8754.pdf | 800V | 6.6A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 5 Weeks | 2.084g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 3.13W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 35 ns | 80ns | 55 ns | 95 ns | 6.6A | 30V | SILICON | SWITCHING | 3.13W Ta 167W Tc | 26.4A | 580 mJ | 800V | N-Channel | 1850pF @ 25V | 1.5 Ω @ 3.3A, 10V | 5V @ 250μA | 6.6A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TK6A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $7.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 600pF | 18ns | 8 ns | 5.5A | 30V | 550V | 35W Tc | N-Channel | 600pF @ 25V | 1.48Ohm @ 2.8A, 10V | 4.4V @ 1mA | 5.5A Ta | 12nC @ 10V | 1.48 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1405strlpbf-datasheets-5286.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | 75A | 680A | 0.0053Ohm | 590 mJ | N-Channel | 5480pF @ 25V | 5.3m Ω @ 101A, 10V | 4V @ 250μA | 131A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| DMT4003SCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 156W | N-Channel | 6865pF @ 20V | 3m Ω @ 90A, 10V | 4V @ 250μA | 205A Tc | 75.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK2076DPA-00#J5A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk2076dpa00j5a-datasheets-8777.pdf | 8-PowerVDFN | 16 Weeks | 8 | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | FET General Purpose Power | 20A | Single | 200V | 65W Tc | N-Channel | 1200pF @ 25V | 85m Ω @ 10A, 10V | 20A Ta | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA023N04NM3SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 7 Weeks |
