Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AUIRF4104 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf4104-datasheets-8747.pdf | TO-220-3 | 10.6426mm | 9.017mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | Single | 140W | 1 | FET General Purpose Power | 16 ns | 130ns | 77 ns | 38 ns | 75A | 20V | SILICON | SWITCHING | 2V | 140W Tc | TO-220AB | 470A | 0.0055Ohm | 220 mJ | 40V | N-Channel | 3000pF @ 25V | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQI7N80TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqi7n80tu-datasheets-8754.pdf | 800V | 6.6A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 5 Weeks | 2.084g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 3.13W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 35 ns | 80ns | 55 ns | 95 ns | 6.6A | 30V | SILICON | SWITCHING | 3.13W Ta 167W Tc | 26.4A | 580 mJ | 800V | N-Channel | 1850pF @ 25V | 1.5 Ω @ 3.3A, 10V | 5V @ 250μA | 6.6A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TK6A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $7.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 600pF | 18ns | 8 ns | 5.5A | 30V | 550V | 35W Tc | N-Channel | 600pF @ 25V | 1.48Ohm @ 2.8A, 10V | 4.4V @ 1mA | 5.5A Ta | 12nC @ 10V | 1.48 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1405strlpbf-datasheets-5286.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | 75A | 680A | 0.0053Ohm | 590 mJ | N-Channel | 5480pF @ 25V | 5.3m Ω @ 101A, 10V | 4V @ 250μA | 131A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| DMT4003SCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 156W | N-Channel | 6865pF @ 20V | 3m Ω @ 90A, 10V | 4V @ 250μA | 205A Tc | 75.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK2076DPA-00#J5A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk2076dpa00j5a-datasheets-8777.pdf | 8-PowerVDFN | 16 Weeks | 8 | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | FET General Purpose Power | 20A | Single | 200V | 65W Tc | N-Channel | 1200pF @ 25V | 85m Ω @ 10A, 10V | 20A Ta | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA023N04NM3SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 7 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RMW280N03TB | ROHM Semiconductor | $4.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rmw280n03tb-datasheets-8708.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 8 | yes | EAR99 | No | DUAL | 260 | 8 | 10 | 3W | 1 | FET General Purpose Power | 24 ns | 81ns | 50 ns | 94 ns | 28A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3W Ta | 112A | 30V | N-Channel | 3130pF @ 15V | 2.8m Ω @ 28A, 10V | 2.5V @ 1mA | 28A Ta | 53nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN005-75B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/nexperiausainc-psmn00575b118-datasheets-8499.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 230W Tc | 75A | 400A | 0.005Ohm | 500 mJ | N-Channel | 8250pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPI65R380C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi65r380c6xksa1-datasheets-8655.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 83W Tc | 10.6A | 29A | 0.38Ohm | 215 mJ | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTA110N055T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 55V | 180W Tc | N-Channel | 3060pF @ 25V | 6.6m Ω @ 25A, 10V | 4V @ 250μA | 110A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL7766M2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirl7766m2tr-datasheets-8659.pdf | DirectFET™ Isometric M4 | 5 | 16 Weeks | No SVHC | 9 | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | BOTTOM | 62.5W | 1 | FET General Purpose Power | R-XBCC-N5 | 16 ns | 24ns | 49 ns | 120 ns | 10A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 2.5W Ta 62.5W Tc | 51A | 204A | 0.01Ohm | 237 mJ | 100V | N-Channel | 5305pF @ 25V | 10m Ω @ 31A, 10V | 2.5V @ 150μA | 10A Ta | 66nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IPL65R340CFDAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipl65r340cfdauma1-datasheets-8666.pdf | 4-PowerTSFN | Contains Lead | 16 Weeks | 4 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | 11 ns | 7.5ns | 7 ns | 45 ns | 10.9A | 20V | 650V | 104.2W Tc | 650V | N-Channel | 1100pF @ 100V | 340m Ω @ 4.4A, 10V | 4.5V @ 400μA | 10.9A Tc | 41nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C410NAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c410naft1g-datasheets-8527.pdf | 8-PowerTDFN, 5 Leads | 34 Weeks | 40V | 3.9W Ta 166W Tc | N-Channel | 6100pF @ 25V | 0.92m Ω @ 50A, 10V | 3.5V @ 250μA | 46A Ta 300A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP70N12S3L12AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipi70n12s3l12aksa1-datasheets-8536.pdf | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 70A | 280A | 0.0158Ohm | 410 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF15S65 | Alpha & Omega Semiconductor Inc. | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 16 Weeks | 841pF | 15A | 650V | 28W Tc | N-Channel | 841pF @ 100V | 290mOhm @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17.2nC @ 10V | 290 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S2L11AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipp80n06s2l11aksa2-datasheets-8624.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 14 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 1 | 11 ns | 32ns | 13 ns | 46 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 158W Tc | 0.0147Ohm | 280 mJ | N-Channel | 2075pF @ 25V | 10.7m Ω @ 40A, 10V | 2V @ 93μA | 80A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4423DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4423dyt1e3-datasheets-0791.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 75 ns | 165ns | 165 ns | 460 ns | -10A | 8V | SILICON | SWITCHING | 20V | 1.5W Ta | 0.0075Ohm | -20V | P-Channel | 7.5m Ω @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 175nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| TK20G60W,RVQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 3.949996g | 3 | No | 1 | Single | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 165W Tc | 600V | N-Channel | 1680pF @ 300V | 155m Ω @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N04S4L02ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb120n04s4l02atma1-datasheets-8694.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | yes | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 120A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 158W Tc | 480A | 0.0017Ohm | 480 mJ | N-Channel | 14560pF @ 25V | 1.7m Ω @ 100A, 10V | 2.2V @ 110μA | 120A Tc | 190nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4632DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4632dyt1e3-datasheets-8699.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 21 Weeks | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | FLAT | 260 | 8 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | 69ns | 8 ns | 58 ns | 40A | 16V | SILICON | 3.5W Ta 7.8W Tc | 27A | 70A | 0.0033Ohm | 45 mJ | 25V | N-Channel | 11175pF @ 15V | 2.7m Ω @ 20A, 10V | 2.6V @ 250μA | 40A Tc | 161nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| TK18E10K3,S1X(S | Toshiba Semiconductor and Storage | $11.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | 71W | TO-220-3 | 18A | 100V | N-Channel | 42mOhm @ 9A, 10V | 18A Ta | 33nC @ 10V | 42 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM50N04-4M0L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50n044m0lge3-datasheets-8705.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 40V | 150W Tc | N-Channel | 6100pF @ 25V | 4mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4632DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4632dyt1e3-datasheets-8699.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 49 Weeks | unknown | DUAL | GULL WING | Single | 3.5W | 1 | R-PDSO-G8 | 40A | 16V | SILICON | SWITCHING | 3.5W Ta 7.8W Tc | 0.0027Ohm | 690 pF | 25V | N-Channel | 11175pF @ 15V | 2.7m Ω @ 20A, 10V | 2.6V @ 250μA | 40A Tc | 161nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4413ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4413adyt1e3-datasheets-9806.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 21 ns | 18ns | 97 ns | 170 ns | -15A | 20V | SILICON | SWITCHING | 30V | 30V | -1V | 1.5W Ta | 0.0075Ohm | P-Channel | 7.5m Ω @ 13A, 10V | 3V @ 250μA | 10.5A Ta | 95nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPI80N08S207AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipi80n08s207aksa1-datasheets-8578.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 80A | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-262AB | 0.0074Ohm | 810 mJ | N-Channel | 4700pF @ 25V | 7.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOB11S65L | Alpha & Omega Semiconductor Inc. | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aob11s65l-datasheets-8347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 11A | 650V | 198W Tc | N-Channel | 646pF @ 100V | 399m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 13.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf9z24spbf-datasheets-1340.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 570pF | 13 ns | 68ns | 29 ns | 15 ns | -11A | 20V | 60V | 3.7W Ta 60W Tc | 280mOhm | -60V | P-Channel | 570pF @ 25V | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL3705Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirl3705z-datasheets-8586.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | 3 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | Single | 130W | 1 | FET General Purpose Power | 17 ns | 240ns | 83 ns | 26 ns | 75A | 16V | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 0.008Ohm | 55V | N-Channel | 2880pF @ 25V | 8m Ω @ 52A, 10V | 3V @ 250μA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA65R380C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r380c6xksa1-datasheets-8595.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 12 ns | 11 ns | 110 ns | 10.6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 31W Tc | TO-220AB | 29A | 215 mJ | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V |
