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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF710SPBF | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf710strlpbf-datasheets-8568.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3.6Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 4V | 3.1W Ta 36W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA60R400CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ips60r400ceakma1-datasheets-2077.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 6.000006g | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 11 ns | 9ns | 8 ns | 56 ns | 10.3A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 31W Tc | TO-220AB | 0.4Ohm | 600V | N-Channel | 700pF @ 100V | 400m Ω @ 3.8A, 10V | 3.5V @ 300μA | 10.3A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TK58A06N1,S4X | Toshiba Semiconductor and Storage | $1.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 33 ns | 11ns | 17 ns | 56 ns | 58A | 20V | 35W Tc | 60V | N-Channel | 3400pF @ 30V | 5.4m Ω @ 29A, 10V | 4V @ 500μA | 58A Tc | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP4NK50ZD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp4nk50zd-datasheets-2282.pdf | 500V | 3A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP4N | 3 | Single | 45W | 1 | FET General Purpose Power | 9.5 ns | 15.5ns | 22 ns | 23 ns | 3A | 30V | SILICON | SWITCHING | 45W Tc | TO-220AB | 3A | 500V | N-Channel | 310pF @ 25V | 2.7 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPP80R900P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80r900p7xksa1-datasheets-2288.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 45W Tc | TO-220AB | 14A | 0.9Ohm | 13 mJ | N-Channel | 350pF @ 500V | 900m Ω @ 2.2A, 10V | 3.5V @ 110μA | 6A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMN95H8D5HCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn95h8d5hct-datasheets-2160.pdf | TO-220-3 | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 950V | 125W Tc | N-Channel | 470pF @ 25V | 7 Ω @ 1A, 10V | 5V @ 250μA | 2.5A Tc | 7.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF5N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf5n60m2-datasheets-2169.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 16 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF5N | 1 | Single | NOT SPECIFIED | 3.7A | 25V | 600V | 20W Tc | N-Channel | 165pF @ 100V | 1.4 Ω @ 1.85A, 10V | 4V @ 250μA | 3.7A Tc | 4.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7787TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfsl7787pbf-datasheets-8283.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 11 ns | 48ns | 39 ns | 51 ns | 76A | 20V | SILICON | DRAIN | SWITCHING | 75V | 75V | 125W Tc | 280A | 0.0084Ohm | 209 mJ | N-Channel | 4020pF @ 25V | 8.4m Ω @ 46A, 10V | 3.7V @ 100μA | 76A Tc | 109nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDD8444L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd8444lf085-datasheets-2096.pdf&product=onsemiconductor-fdd8444lf085-6850141 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 260.37mg | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 153W | 1 | FET General Purpose Power | R-PSSO-G2 | 18.7 ns | 46ns | 19.2 ns | 42 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 153W Tc | 50A | 0.0065Ohm | 295 mJ | 40V | N-Channel | 5530pF @ 25V | 5.2m Ω @ 50A, 10V | 3V @ 250μA | 16A Ta 50A Tc | 60nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPA093N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa093n06n3gxksa1-datasheets-2206.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 15 ns | 40ns | 5 ns | 20 ns | 43A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 33W Tc | TO-220AB | 172A | N-Channel | 3900pF @ 30V | 9.3m Ω @ 40A, 10V | 4V @ 34μA | 43A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHJ8N60E-T1-GE3 | Vishay Siliconix | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihj8n60et1ge3-datasheets-1990.pdf | PowerPAK® SO-8 | 14 Weeks | No SVHC | 4 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 8A | 600V | 2V | 89W Tc | N-Channel | 754pF @ 100V | 520m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR402DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sidr402dpt1ge3-datasheets-2093.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 40V | 6.25W Ta 125W Tc | 730μOhm | N-Channel | 9100pF @ 20V | 0.88mOhm @ 20A, 10V | 2.3V @ 250μA | 64.6A Ta 100A Tc | 165nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R8-30BL,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn1r830bl118-datasheets-2203.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 270W | 1 | R-PSSO-G2 | 92 ns | 156ns | 69 ns | 135 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 270W Tc | 1120A | 0.0021Ohm | 1.1 mJ | 30V | N-Channel | 10180pF @ 15V | 1.8m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 170nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTQ88N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq88n30p-datasheets-2251.pdf | TO-3P-3, SC-65-3 | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | 220A | 0.04Ohm | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 250μA | 88A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| DMN90H8D5HCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmn90h8d5hct-datasheets-2261.pdf | TO-220-3 | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 900V | 125W Tc | N-Channel | 470pF @ 25V | 7 Ω @ 1A, 10V | 5V @ 250μA | 2.5A Tc | 7.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPU02N60C3BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu02n60c3bkma1-datasheets-2264.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 8 Weeks | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 25W Tc | 1.8A | 5.4A | 3Ohm | 50 mJ | N-Channel | 200pF @ 25V | 3 Ω @ 1.1A, 10V | 3.9V @ 80μA | 1.8A Tc | 12.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TK100S04N1L,LQ | Toshiba Semiconductor and Storage | $2.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | DPAK+ | 5.49nF | 23 ns | 8ns | 19 ns | 80 ns | 100A | 20V | 40V | 100W Tc | 1.9mOhm | 40V | N-Channel | 5490pF @ 10V | 2.3mOhm @ 50A, 10V | 2.5V @ 500μA | 100A Ta | 76nC @ 10V | 2.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB034N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp034n03lgxksa1-datasheets-9817.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 94W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 9.2 ns | 6.4ns | 5.4 ns | 35 ns | 80A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 94W Tc | 400A | 0.0047Ohm | 70 mJ | N-Channel | 5300pF @ 15V | 3.4m Ω @ 30A, 10V | 2.2V @ 250μA | 80A Tc | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STFU10N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf10n80k5-datasheets-4337.pdf | TO-220-3 Full Pack | 27 Weeks | STFU1 | 800V | 30W Tc | N-Channel | 635pF @ 100V | 600m Ω @ 4.5A, 10V | 5V @ 100μA | 9A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF20N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf20n06-datasheets-2142.pdf | 60V | 15A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 30W | 1 | FET General Purpose Power | 5 ns | 45ns | 25 ns | 20 ns | 15A | 25V | SILICON | ISOLATED | SWITCHING | 30W Tc | 60A | 0.06Ohm | 60V | N-Channel | 590pF @ 25V | 60m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 15nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| PSMN2R7-30BL,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn2r730bl118-datasheets-1961.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 245 | 3 | Single | 30 | 170W | 1 | R-PSSO-G2 | 46 ns | 82ns | 35 ns | 74 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 170W Tc | 30V | N-Channel | 3954pF @ 15V | 3m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 66nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| APT25M100J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-apt25m100j-datasheets-1983.pdf | 1kV | 25A | SOT-227-4, miniBLOC | Lead Free | 4 | 18 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 545W | 1 | 44 ns | 40ns | 38 ns | 150 ns | 25A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 545W Tc | 0.33Ohm | N-Channel | 9835pF @ 25V | 330m Ω @ 18A, 10V | 5V @ 2.5mA | 25A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STL7N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl7n10f7-datasheets-1986.pdf | 8-PowerVDFN | Lead Free | 27mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL7 | 1 | Single | NOT SPECIFIED | 9.8 ns | 14ns | 4.6 ns | 14.8 ns | 7A | 20V | 100V | 2.9W Ta 50W Tc | N-Channel | 920pF @ 50V | 35m Ω @ 3.5A, 10V | 4.5V @ 250μA | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8302MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf8302mtrpbf-datasheets-1997.pdf | DirectFET™ Isometric MX | 700μm | 3 | 12 Weeks | 7 | EAR99 | No | MG-WDSON-5 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1 | 2.8W | 1 | FET General Purpose Power | 150°C | R-XBCC-N3 | 22 ns | 37ns | 15 ns | 20 ns | 31A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.35V | 2.8W Ta 104W Tc | 250A | 260 mJ | 30V | N-Channel | 6030pF @ 15V | 1.8m Ω @ 31A, 10V | 2.35V @ 150μA | 31A Ta 190A Tc | 53nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STL30N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl30n10f7-datasheets-1748.pdf | 8-PowerVDFN | 6.35mm | 950μm | 5.4mm | Lead Free | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL30 | 1 | Single | NOT SPECIFIED | 9.8 ns | 14ns | 4.6 ns | 14.8 ns | 30A | 20V | 75W Tc | 100V | N-Channel | 920pF @ 50V | 35m Ω @ 4A, 10V | 4.5V @ 250μA | 30A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STB100N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp100n10f7-datasheets-1960.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 3 | 38 Weeks | 3.949996g | 3 | EAR99 | THROUGH-HOLE | NOT SPECIFIED | STB100N | 1 | Single | NOT SPECIFIED | 1 | 27 ns | 40ns | 15 ns | 46 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 0.008Ohm | 400 mJ | 100V | N-Channel | 4369pF @ 50V | 8m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FQB33N10TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb33n10tm-datasheets-1795.pdf | 100V | 33A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 11 Weeks | 1.31247g | No SVHC | 52MOhm | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15 ns | 195ns | 110 ns | 80 ns | 33A | 25V | SILICON | DRAIN | SWITCHING | 4V | 3.75W Ta 127W Tc | 100V | N-Channel | 1500pF @ 25V | 52m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 51nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| BUK7E13-60E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7e1360e127-datasheets-2024.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.299997g | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | 3 | 1 | Single | 1 | 10.8 ns | 9.2ns | 9.8 ns | 21.9 ns | 58A | 20V | 60V | SILICON | DRAIN | SWITCHING | 96W Tc | N-Channel | 1730pF @ 25V | 13m Ω @ 15A, 10V | 4V @ 1mA | 58A Tc | 22.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTX60N50L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx60n50l2-datasheets-2027.pdf | TO-247-3 | 3 | 17 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 960W | 1 | Not Qualified | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 960W Tc | 150A | 0.1Ohm | N-Channel | 24000pF @ 25V | 2.5 V | 100m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 610nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STD40P8F6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std40p8f6ag-datasheets-1624.pdf | ACTIVE (Last Updated: 8 months ago) | STD40 |
