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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NVMFS5830NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfs5830nlt1g-datasheets-5311.pdf | DFN | Lead Free | 5 | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | 3.8W | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 3.8W | 1 | FET General Purpose Power | 5.88nF | 22 ns | 32ns | 27 ns | 40 ns | 29A | 20V | DRAIN | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 2.3mOhm | 2.3 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6662TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6662trpbf-datasheets-5082.pdf | 100V | 8.3A | DirectFET™ Isometric MZ | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | 31MOhm | 7 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 11 ns | 7.5ns | 5.9 ns | 24 ns | 6.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 66A | 39 mJ | 100V | N-Channel | 1360pF @ 25V | 22m Ω @ 8.2A, 10V | 4.9V @ 100μA | 8.3A Ta 47A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF3415STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf3415strlpbf-datasheets-5313.pdf | 150V | 43A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 4.2MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 12 ns | 55ns | 69 ns | 71 ns | 43A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 200W Tc | 390 ns | 590 mJ | 150V | N-Channel | 2400pF @ 25V | 4 V | 42m Ω @ 22A, 10V | 4V @ 250μA | 43A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF7580MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineon-irf7580mtrpbf-datasheets-5209.pdf | DirectFET™ Isometric ME | Lead Free | 12 Weeks | 10 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 115W | 20 ns | 38ns | 21 ns | 53 ns | 114A | 20V | 60V | 115W Tc | N-Channel | 6510pF @ 25V | 3.6m Ω @ 70A, 10V | 3.7V @ 150μA | 114A Tc | 180nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7762TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfsl7762pbf-datasheets-5431.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | 3.949996g | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 11 ns | 49ns | 40 ns | 57 ns | 85A | 20V | 75V | 140W Tc | N-Channel | 4440pF @ 25V | 6.7m Ω @ 51A, 10V | 3.7V @ 100μA | 85A Tc | 130nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB47N10SL26ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-ipb47n10sl26atma1-datasheets-5437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 10 Weeks | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 175W | 1 | R-PSSO-G2 | 50 ns | 100ns | 70 ns | 47A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | 175W Tc | 0.04Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 26m Ω @ 33A, 10V | 2V @ 2mA | 47A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSC016N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc016n06nsatma1-datasheets-5458.pdf&product=infineontechnologies-bsc016n06nsatma1-6848503 | 8-PowerTDFN | 1.1mm | Contains Lead | 3 | 13 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Powers | 150°C | R-PDSO-F3 | 19 ns | 9ns | 9 ns | 35 ns | 30A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 139W Tc | 400A | 60V | N-Channel | 5200pF @ 30V | 1.6m Ω @ 50A, 10V | 2.8V @ 95μA | 30A Ta 100A Tc | 71nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFS52N15DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfb52n15dpbf-datasheets-3597.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | No SVHC | 3 | yes | No | GULL WING | Single | 3.8W | 1 | R-PSSO-G2 | 16 ns | 47ns | 25 ns | 28 ns | 60A | 30V | 150V | SILICON | DRAIN | SWITCHING | 3.8W Ta 230W Tc | 240A | 470 mJ | 150V | N-Channel | 2770pF @ 25V | 5 V | 32m Ω @ 36A, 10V | 5V @ 250μA | 51A Tc | 89nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSC034N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc034n06nsatma1-datasheets-5140.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2.5W | 1 | R-PDSO-F5 | 5ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 74W Tc | 400A | 0.0034Ohm | N-Channel | 3000pF @ 30V | 3.4m Ω @ 50A, 10V | 3.3V @ 41μA | 100A Tc | 41nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90P03P404ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd90p03p404atma1-datasheets-5048.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 35 ns | 10ns | 20 ns | 70 ns | 90A | 20V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 137W Tc | 0.0045Ohm | P-Channel | 10300pF @ 25V | 4.5m Ω @ 90A, 10V | 4V @ 253μA | 90A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irl3803strlpbf-datasheets-5116.pdf | 30V | 140A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 6mOhm | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 230ns | 35 ns | 29 ns | 140A | 16V | 30V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 200W Tc | 180 ns | 470A | 30V | N-Channel | 5000pF @ 25V | 1 V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| IRFH8303TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh8303trpbf-datasheets-4733.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | No SVHC | 8 | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.7W | FET General Purpose Power | 21 ns | 91ns | 65 ns | 48 ns | 100A | 20V | Single | 1.7V | 3.7W Ta 156W Tc | 43A | 30V | N-Channel | 7736pF @ 24V | 1.1m Ω @ 50A, 10V | 2.2V @ 150μA | 43A Ta 100A Tc | 179nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB03N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb03n03lbg-datasheets-4740.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 150W Tc | N-Channel | 7624pF @ 15V | 2.8m Ω @ 55A, 10V | 2V @ 100μA | 80A Tc | 59nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf3710zpbf-datasheets-2195.pdf | 100V | 59A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 18MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 160W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 17 ns | 77ns | 56 ns | 41 ns | 59A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 160W Tc | 50 ns | 75 ns | 240A | 200 mJ | 100V | N-Channel | 2900pF @ 25V | 4 V | 18m Ω @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| BSC011N03LSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc011n03lsiatma1-datasheets-4911.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 9.2ns | 37A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 96W Tc | 400A | N-Channel | 4300pF @ 15V | 1.1m Ω @ 30A, 10V | 2V @ 250μA | 37A Ta 100A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB50N10S3L16ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50n10s3l16aksa1-datasheets-9101.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 5ns | 28 ns | 50A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 200A | 0.0206Ohm | N-Channel | 4180pF @ 25V | 15.4m Ω @ 50A, 10V | 2.4V @ 60μA | 50A Tc | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSZ900N20NS3GATMA1 | Infineon Technologies | $3.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-bsz900n20ns3gatma1-datasheets-4694.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 62.5W | 1 | Not Qualified | S-PDSO-N5 | 5 ns | 4ns | 3 ns | 10 ns | 15.2A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | 0.09Ohm | N-Channel | 920pF @ 100V | 90m Ω @ 7.6A, 10V | 4V @ 30μA | 15.2A Tc | 11.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRLL2705TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirll2705tr-datasheets-4936.pdf | TO-261-4, TO-261AA | Lead Free | 10 Weeks | 4 | EAR99 | No | 2.1W | 1 | FET General Purpose Power | 6.2 ns | 12ns | 22 ns | 35 ns | 3.8A | 16V | Single | 1W Ta | 5.2A | 55V | N-Channel | 870pF @ 25V | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 5.2A Ta | 48nC @ 10V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7440TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs7440trlpbf-datasheets-4846.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 2.5MOhm | 3 | EAR99 | No | GULL WING | Single | 208W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 68ns | 68 ns | 115 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | 208A | 772A | 40V | N-Channel | 4730pF @ 25V | 3 V | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFS4020TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfs4020trlpbf-datasheets-5008.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.652mm | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.8 ns | 12ns | 6.3 ns | 16 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 52A | 94 mJ | 200V | N-Channel | 1200pF @ 50V | 105m Ω @ 11A, 10V | 4.9V @ 100μA | 18A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB60R380C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb60r380c6atma1-datasheets-5070.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 18 Weeks | no | HIGH VOLTAGE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 83W | 1 | Not Qualified | R-PSSO-G2 | 15 ns | 10ns | 9 ns | 110 ns | 10.6A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 30A | 0.38Ohm | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 10.6A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRL1404SPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irgp6650depbf-datasheets-3179.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 3.8W Ta 200W Tc | N-Channel | 6.6pF @ 25V | 4mOhm @ 95A, 10V | 3V @ 250μA | 160A Tc | 140nC @ 5V | 4.3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76645S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76419p3-datasheets-5679.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 310W Tc | 75A | 0.015Ohm | N-Channel | 4.4pF @ 25V | 14m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 153nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5250DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfh5250dtrpbf-datasheets-4676.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 12 Weeks | 1.4MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 23 ns | 72ns | 24 ns | 23 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 156W Tc | 40A | 400A | 470 mJ | 25V | N-Channel | 6115pF @ 13V | 1.4m Ω @ 50A, 10V | 2.35V @ 150μA | 40A Ta 100A Tc | 83nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRLR3410TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirlr3410trl-datasheets-4649.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 79W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.2 ns | 53ns | 26 ns | 30 ns | 17A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 79W Tc | TO-252AA | 60A | 100V | N-Channel | 800pF @ 25V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPD038N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd038n06n3gatma1-datasheets-4744.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 188W | 1 | Not Qualified | R-PSSO-G2 | 30 ns | 70ns | 5 ns | 40 ns | 90A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 188W Tc | TO-252AA | 165 mJ | N-Channel | 8000pF @ 30V | 3.8m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 98nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSC190N12NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc190n12ns3gatma1-datasheets-4770.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 69W | 1 | Not Qualified | R-PDSO-F5 | 17 ns | 16ns | 4 ns | 22 ns | 8.6A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 69W Tc | 60 mJ | N-Channel | 2300pF @ 60V | 19m Ω @ 39A, 10V | 4V @ 42μA | 8.6A Ta 44A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFS7534PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfr15n20dpbf-datasheets-2647.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 294W Tc | N-Channel | 10.034pF @ 25V | 2.4mOhm @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 279nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB70N04S406ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipp70n04s406aksa1-datasheets-4331.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 8 ns | 10ns | 9 ns | 7 ns | 70A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 58W Tc | 280A | 0.0062Ohm | 72 mJ | N-Channel | 2550pF @ 25V | 6.2m Ω @ 70A, 10V | 4V @ 26μA | 70A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfz44zpbf-datasheets-9533.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 13.9MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 68ns | 41 ns | 33 ns | 51A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | 200A | 86 mJ | 55V | N-Channel | 1420pF @ 25V | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 43nC @ 10V | 10V | ±20V |
