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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSC016N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc016n06nsatma1-datasheets-5458.pdf&product=infineontechnologies-bsc016n06nsatma1-6848503 | 8-PowerTDFN | 1.1mm | Contains Lead | 3 | 13 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Powers | 150°C | R-PDSO-F3 | 19 ns | 9ns | 9 ns | 35 ns | 30A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 139W Tc | 400A | 60V | N-Channel | 5200pF @ 30V | 1.6m Ω @ 50A, 10V | 2.8V @ 95μA | 30A Ta 100A Tc | 71nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| NTBV5605T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-ntb5605pt4g-datasheets-7511.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 3 | LIFETIME (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 1 | Other Transistors | R-PSSO-G2 | 12.5 ns | 122ns | 75 ns | 29 ns | 18.5A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 88W Tc | 55A | 0.14Ohm | P-Channel | 1190pF @ 25V | 140m Ω @ 8.5A, 5V | 2V @ 250μA | 18.5A Ta | 22nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFS7437TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7437trl7pp-datasheets-5442.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | Lead Free | 12 Weeks | No SVHC | 1.4MOhm | 7 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 231W | 1 | FET General Purpose Power | 18 ns | 62ns | 51 ns | 78 ns | 195A | 20V | Single | 2.2V | 231W Tc | 40V | N-Channel | 7437pF @ 25V | 1.4m Ω @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL7833STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl7833pbf-datasheets-2940.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3.8MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 50ns | 6.9 ns | 21 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 140W Tc | 75A | 600A | 30V | N-Channel | 4170pF @ 15V | 3.8m Ω @ 38A, 10V | 2.3V @ 250μA | 150A Tc | 47nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSP135H6906XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp135h6327xtsa1-datasheets-6832.pdf | TO-261-4, TO-261AA | 10 Weeks | 600V | 1.8W Ta | N-Channel | 146pF @ 25V | 45 Ω @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8010STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf8010strlpbf-datasheets-5037.pdf | 100V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 15mOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 260W | 1 | R-PSSO-G2 | 15 ns | 130ns | 120 ns | 61 ns | 80A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 260W Tc | 75A | 100V | N-Channel | 3830pF @ 25V | 4 V | 15m Ω @ 45A, 10V | 4V @ 250μA | 80A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF2807ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf2807zpbf-datasheets-8787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 7.4MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 79ns | 45 ns | 40 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 170W Tc | 89A | 75V | N-Channel | 3270pF @ 25V | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF3710ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf3710zpbf-datasheets-2195.pdf | 100V | 59A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 18MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 160W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 17 ns | 77ns | 56 ns | 41 ns | 59A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 160W Tc | 50 ns | 75 ns | 240A | 200 mJ | 100V | N-Channel | 2900pF @ 25V | 4 V | 18m Ω @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| BSC011N03LSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc011n03lsiatma1-datasheets-4911.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 9.2ns | 37A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 96W Tc | 400A | N-Channel | 4300pF @ 15V | 1.1m Ω @ 30A, 10V | 2V @ 250μA | 37A Ta 100A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB50N10S3L16ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50n10s3l16aksa1-datasheets-9101.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 5ns | 28 ns | 50A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 200A | 0.0206Ohm | N-Channel | 4180pF @ 25V | 15.4m Ω @ 50A, 10V | 2.4V @ 60μA | 50A Tc | 64nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSZ900N20NS3GATMA1 | Infineon Technologies | $3.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-bsz900n20ns3gatma1-datasheets-4694.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 62.5W | 1 | Not Qualified | S-PDSO-N5 | 5 ns | 4ns | 3 ns | 10 ns | 15.2A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | 0.09Ohm | N-Channel | 920pF @ 100V | 90m Ω @ 7.6A, 10V | 4V @ 30μA | 15.2A Tc | 11.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AUIRLL2705TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirll2705tr-datasheets-4936.pdf | TO-261-4, TO-261AA | Lead Free | 10 Weeks | 4 | EAR99 | No | 2.1W | 1 | FET General Purpose Power | 6.2 ns | 12ns | 22 ns | 35 ns | 3.8A | 16V | Single | 1W Ta | 5.2A | 55V | N-Channel | 870pF @ 25V | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 5.2A Ta | 48nC @ 10V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7440TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs7440trlpbf-datasheets-4846.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 2.5MOhm | 3 | EAR99 | No | GULL WING | Single | 208W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 68ns | 68 ns | 115 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | 208A | 772A | 40V | N-Channel | 4730pF @ 25V | 3 V | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 135nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFS4020TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfs4020trlpbf-datasheets-5008.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.652mm | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.8 ns | 12ns | 6.3 ns | 16 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 52A | 94 mJ | 200V | N-Channel | 1200pF @ 50V | 105m Ω @ 11A, 10V | 4.9V @ 100μA | 18A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB60R380C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb60r380c6atma1-datasheets-5070.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 18 Weeks | no | HIGH VOLTAGE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 83W | 1 | Not Qualified | R-PSSO-G2 | 15 ns | 10ns | 9 ns | 110 ns | 10.6A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 30A | 0.38Ohm | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 10.6A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFS52N15DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfb52n15dpbf-datasheets-3597.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | No SVHC | 3 | yes | No | GULL WING | Single | 3.8W | 1 | R-PSSO-G2 | 16 ns | 47ns | 25 ns | 28 ns | 60A | 30V | 150V | SILICON | DRAIN | SWITCHING | 3.8W Ta 230W Tc | 240A | 470 mJ | 150V | N-Channel | 2770pF @ 25V | 5 V | 32m Ω @ 36A, 10V | 5V @ 250μA | 51A Tc | 89nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| BSC034N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc034n06nsatma1-datasheets-5140.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2.5W | 1 | R-PDSO-F5 | 5ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 74W Tc | 400A | 0.0034Ohm | N-Channel | 3000pF @ 30V | 3.4m Ω @ 50A, 10V | 3.3V @ 41μA | 100A Tc | 41nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD90P03P404ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd90p03p404atma1-datasheets-5048.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 35 ns | 10ns | 20 ns | 70 ns | 90A | 20V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 137W Tc | 0.0045Ohm | P-Channel | 10300pF @ 25V | 4.5m Ω @ 90A, 10V | 4V @ 253μA | 90A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRL3803STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irl3803strlpbf-datasheets-5116.pdf | 30V | 140A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 6mOhm | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 230ns | 35 ns | 29 ns | 140A | 16V | 30V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 200W Tc | 180 ns | 470A | 30V | N-Channel | 5000pF @ 25V | 1 V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||
| IRFH8303TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh8303trpbf-datasheets-4733.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | No SVHC | 8 | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.7W | FET General Purpose Power | 21 ns | 91ns | 65 ns | 48 ns | 100A | 20V | Single | 1.7V | 3.7W Ta 156W Tc | 43A | 30V | N-Channel | 7736pF @ 24V | 1.1m Ω @ 50A, 10V | 2.2V @ 150μA | 43A Ta 100A Tc | 179nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB03N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb03n03lbg-datasheets-4740.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 150W Tc | N-Channel | 7624pF @ 15V | 2.8m Ω @ 55A, 10V | 2V @ 100μA | 80A Tc | 59nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB70N04S406ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipp70n04s406aksa1-datasheets-4331.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 8 ns | 10ns | 9 ns | 7 ns | 70A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 58W Tc | 280A | 0.0062Ohm | 72 mJ | N-Channel | 2550pF @ 25V | 6.2m Ω @ 70A, 10V | 4V @ 26μA | 70A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFZ44ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfz44zpbf-datasheets-9533.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 13.9MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 68ns | 41 ns | 33 ns | 51A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | 200A | 86 mJ | 55V | N-Channel | 1420pF @ 25V | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NP70N04MUG-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np2600samct3g-datasheets-4347.pdf | TO-220-3 | TO-220 | 40V | 1.8W Ta 115W Tc | N-Channel | 4.9pF @ 25V | 5mOhm @ 35A, 10V | 4V @ 250μA | 70A Tc | 90nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EZSTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf1010ezpbf-datasheets-1778.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | 8.5MOhm | 3 | yes | No | Single | 140W | 1 | 19 ns | 90ns | 54 ns | 38 ns | 75A | 20V | 140W Tc | 60V | N-Channel | 2810pF @ 25V | 8.5m Ω @ 51A, 10V | 4V @ 100μA | 75A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R380CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd50r380ceauma1-datasheets-3571.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 73W Tc | 14.1A | 32.4A | 0.38Ohm | 173 mJ | N-Channel | 584pF @ 100V | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 9.9A Tc | 24.8nC @ 10V | Super Junction | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7740TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7740trpbf-datasheets-4261.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 36ns | 30 ns | 55 ns | 87A | 20V | SILICON | DRAIN | SWITCHING | 75V | 75V | 3.7V | 140W Tc | TO-252AA | 0.0072Ohm | 242 mJ | N-Channel | 4430pF @ 25V | 7.2m Ω @ 52A, 10V | 3.7V @ 100μA | 87A Tc | 126nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPB083N10N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi086n10n3gxksa1-datasheets-9282.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PSSO-G2 | 18 ns | 42ns | 8 ns | 31 ns | 80A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 125W Tc | N-Channel | 3980pF @ 50V | 8.3m Ω @ 73A, 10V | 3.5V @ 75μA | 80A Tc | 55nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB042N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp042n03lgxksa1-datasheets-3044.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 79W | 1 | Not Qualified | R-PSSO-G2 | 70A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 79W Tc | 400A | 0.006Ohm | 60 mJ | N-Channel | 3900pF @ 15V | 4.2m Ω @ 30A, 10V | 2.2V @ 250μA | 70A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRL1404SPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irgp6650depbf-datasheets-3179.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 3.8W Ta 200W Tc | N-Channel | 6.6pF @ 25V | 4mOhm @ 95A, 10V | 3V @ 250μA | 160A Tc | 140nC @ 5V | 4.3V 10V | ±20V |
