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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUZ73AE3046XK | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buz73ae3046xk-datasheets-2282.pdf | TO-220-3 | PG-TO220-3 | 200V | 40W Tc | N-Channel | 530pF @ 25V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | 5.5A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1F132N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f132n50p3-datasheets-2252.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 30 Weeks | 24 | Single | FET General Purpose Power | 42 ns | 90 ns | 63A | 40V | 500V | 520W Tc | N-Channel | 18600pF @ 25V | 43m Ω @ 66A, 10V | 5V @ 8mA | 63A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| NVMFS4C03NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfs4c03nt3g-datasheets-0692.pdf | 8-PowerTDFN | Lead Free | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | FET General Purpose Power | R-PDSO-F5 | 143A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.71W Ta 77W Tc | 900A | 0.0024Ohm | 549 mJ | N-Channel | 3071pF @ 15V | 2.1m Ω @ 30A, 10V | 2.2V @ 250μA | 31.4A Ta 143A Tc | 45.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| HUF75333S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75623p3-datasheets-5041.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | unknown | e0 | TIN LEAD | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 150W Tc | 66A | 0.016Ohm | N-Channel | 1.3pF @ 25V | 16m Ω @ 66A, 10V | 4V @ 250μA | 66A Tc | 85nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFHS8342TR2PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfhs8342tr2pbf-datasheets-2258.pdf | 6-PowerVDFN | PG-TSDSON-6 | 30V | N-Channel | 600pF @ 25V | 16mOhm @ 8.5A, 10V | 2.35V @ 25μA | 8.8A Ta 19A Tc | 8.7nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB75N03RG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntb75n03rt4g-datasheets-5016.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.25W Ta 74.4W Tc | 75A | 225A | 0.013Ohm | 71.7 mJ | N-Channel | 1.333pF @ 20V | 8m Ω @ 20A, 10V | 2V @ 250μA | 9.7A Ta 75A Tc | 13.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFU2607ZPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfu2607zpbf-datasheets-2262.pdf | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 75V | 110W Tc | N-Channel | 1.44pF @ 25V | 22mOhm @ 30A, 10V | 4V @ 50μA | 42A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9392PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf9392pbf-datasheets-2264.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | P-Channel | 1.27pF @ 25V | 12.1mOhm @ 7.8A, 20V | 2.4V @ 25μA | 9.8A Ta | 14nC @ 4.5V | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB6N25TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb6n25tm-datasheets-2266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 3.13W Ta 63W Tc | 5.5A | 22A | 1Ohm | 75 mJ | N-Channel | 300pF @ 25V | 1 Ω @ 2.75A, 10V | 5V @ 250μA | 5.5A Tc | 8.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| NTP4302G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd20n03l27t4-datasheets-4478.pdf | TO-220-3 | 3 | yes | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 80W Tc | TO-220AB | 74A | 175A | 0.0093Ohm | 722 mJ | N-Channel | 2.4pF @ 24V | 9.3m Ω @ 37A, 10V | 3V @ 250μA | 74A Tc | 28nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF7413PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf8714pbf-datasheets-2232.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 1.8pF @ 25V | 11mOhm @ 7.3A, 10V | 3V @ 250μA | 13A Ta | 79nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMFT2N02ELT1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mmft2n02elt1-datasheets-2272.pdf | TO-261-4, TO-261AA | 4 | LOGIC LEVEL COMPATIBLE | NOT SPECIFIED | YES | DUAL | GULL WING | 4 | 1 | COMMERCIAL | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.6A | 0.15Ohm | N-Channel | 580pF @ 15V | 150m Ω @ 800mA, 5V | 2V @ 1mA | 1.6A Ta | 20nC @ 5V | |||||||||||||||||||||||||||||||||||||||||
| FQPF5N15 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf7n10-datasheets-5677.pdf | TO-220-3 Full Pack | 3 | yes | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 32W Tc | 4.2A | 16.8A | 0.8Ohm | 55 mJ | N-Channel | 230pF @ 25V | 800m Ω @ 2.1A, 10V | 4V @ 250μA | 4.2A Tc | 7nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| FQP2P25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp6n80-datasheets-8173.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 52W Tc | TO-220AB | 2.3A | 9.2A | 4Ohm | 120 mJ | P-Channel | 250pF @ 25V | 4 Ω @ 1.15A, 10V | 5V @ 250μA | 2.3A Tc | 8.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| FQD3P50TM-AM002BLT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqd3p50tmam002blt-datasheets-2199.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4 Weeks | 500V | 2.5W Ta 50W Tc | P-Channel | 660pF @ 25V | 4.9 Ω @ 1.05A, 10V | 5V @ 250μA | 2.1A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD65N03RG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nthd2102pt1-datasheets-9662.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.3W Ta 50W Tc | 32A | 130A | 0.0146Ohm | 71.7 mJ | N-Channel | 1.4pF @ 20V | 8.4m Ω @ 30A, 10V | 2V @ 250μA | 9.5A Ta 32A Tc | 16nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTT2N300P3HV | IXYS | $42.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~155°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtt2n300p3hv-datasheets-2202.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | 2A | 3000V | 520W Tc | N-Channel | 1890pF @ 25V | 21 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N80Q3 | IXYS | $53.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n80q3-datasheets-2247.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 780W | 1 | FET General Purpose Power | 45 ns | 300ns | 63 ns | 37A | 30V | SILICON | ISOLATED | SWITCHING | 780W Tc | 130A | 0.19Ohm | 3500 mJ | 800V | N-Channel | 9840pF @ 25V | 190m Ω @ 22A, 10V | 6.5V @ 8mA | 37A Tc | 185nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| APTML100U60R020T1AG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptml100u60r020t1ag-datasheets-2204.pdf | SP1 | 6 | 36 Weeks | 1 | EAR99 | No | UPPER | THROUGH-HOLE | 12 | 520W | 1 | FET General Purpose Power | R-XUFM-T6 | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 520W Tc | 74A | 0.72Ohm | N-Channel | 6000pF @ 25V | 720m Ω @ 10A, 10V | 4V @ 2.5mA | 20A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||
| DMNH4011SK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh4011sk3q13-datasheets-2153.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 50A | 40V | 2.6W Ta | N-Channel | 1405pF @ 20V | 10m Ω @ 50A, 10V | 4V @ 250μA | 50A Tc | 25.5nC @ 10V | 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||
| DMNH6012LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh6012lk313-datasheets-2211.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 17 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2W Ta | 120A | 0.018Ohm | 100 mJ | N-Channel | 1926pF @ 30V | 12m Ω @ 25A, 10V | 3V @ 250μA | 60A Tc | 35.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| BSP372L6327HTSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bsp372l6327htsa1-datasheets-2213.pdf | TO-261-4, TO-261AA | PG-SOT223-4 | 100V | 1.8W Ta | N-Channel | 520pF @ 25V | 310mOhm @ 1.7A, 5V | 2V @ 1mA | 1.7A Ta | 5V | ±14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD5903T1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nthd5903t1g-datasheets-2848.pdf | 8 | yes | LOGIC LEVEL COMPATIBLE | e0 | TIN LEAD | YES | DUAL | C BEND | 240 | 8 | 30 | 2 | COMMERCIAL | R-XDSO-C8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 2.2A | 0.155Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
| C3M0021120D | Cree/Wolfspeed | $29.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | TO-247-3 | TO-247-3 | 1200V | 469W Tc | N-Channel | 4818pF @ 1000V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 100A Tc | 160nC @ 15V | 15V | +15V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTF1R4N450 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtf1r4n450-datasheets-2224.pdf | i4-Pac™-5 (3 Leads) | 28 Weeks | 1.4A | 4500V | 190W Tc | N-Channel | 3300pF @ 25V | 40 Ω @ 50mA, 10V | 6V @ 250μA | 1.4A Tc | 88nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6010LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6010lps13-datasheets-2111.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 2.6W Ta 136W Tc | N-Channel | 2090pF @ 30V | 8m Ω @ 20A, 10V | 3V @ 250μA | 13.5A Ta 100A Tc | 41.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF8714PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf8714pbf-datasheets-2231.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 1.02pF @ 15V | 8.7mOhm @ 14A, 10V | 2.35V @ 25μA | 14A Ta | 12nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6226 | Alpha & Omega Semiconductor Inc. | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSMD, Flat Leads | 18 Weeks | 100V | 108W Tc | N-Channel | 3130pF @ 50V | 7.9m Ω @ 20A, 10V | 2.3V @ 250μA | 48A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2222LLG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-usb3311gjtr-datasheets-6649.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 60V | 400mW Ta | N-Channel | 60pF @ 25V | 7.5Ohm @ 500mA, 10V | 2.5V @ 1mA | 150mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002MTF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2n7002mtf-datasheets-2240.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 30 | 1 | COMMERCIAL | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 200mW Ta | 0.115A | 5Ohm | 5 pF | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 3V @ 1mA | 115mA Tc | 5V 10V | ±20V |
