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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDU8586 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw2510nz-datasheets-2429.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 20V | 20V | 77W Tc | 35A | 354A | 0.0055Ohm | 144 mJ | N-Channel | 2.48pF @ 10V | 5.5m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 48nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPN80R3K3P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn80r3k3p7atma1-datasheets-7420.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 6.1W Tc | N-Channel | 120pF @ 500V | 3.3 Ω @ 590mA, 10V | 3.5V @ 30μA | 1.9A Tc | 5.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPD220N06L3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd220n06l3gbtma1-datasheets-7340.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | YES | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 36W | 1 | Not Qualified | R-PSSO-G2 | 9 ns | 3ns | 19 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 36W Tc | TO-252AA | 120A | 0.022Ohm | 60V | N-Channel | 1600pF @ 30V | 22m Ω @ 30A, 10V | 2.2V @ 11μA | 30A Tc | 10nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| UPA2211T1M-T1-AT | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa2810t1le2ay-datasheets-5350.pdf | 8-SMD, Flat Lead | 8-VSOF | 12V | 1.1W Ta | P-Channel | 1.35pF @ 10V | 25mOhm @ 7.5A, 4.5V | 1.5V @ 1mA | 7.5A Ta | 14.9nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ088N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsz088n03lsgatma1-datasheets-7450.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | Not Qualified | R-PDSO-N5 | 2.8ns | 12A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 35W Tc | 40A | 25 mJ | N-Channel | 1700pF @ 15V | 8.8m Ω @ 20A, 10V | 2.2V @ 250μA | 12A Ta 40A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FDD2612 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd6782a-datasheets-4520.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 42W Ta | 4.9A | 10A | 0.72Ohm | 90 mJ | N-Channel | 234pF @ 100V | 720m Ω @ 1.5A, 10V | 4.5V @ 250μA | 4.9A Ta | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFD9123 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfd9123-datasheets-7463.pdf | 4-DIP (0.300, 7.62mm) | 3 | no | unknown | e0 | TIN LEAD | NO | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PDIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 80V | 0.8A | 0.8Ohm | P-Channel | 390pF @ 25V | 600m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD123 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-irfd123-datasheets-7465.pdf | 4-DIP (0.300, 7.62mm) | 3 | no | e0 | TIN LEAD | NO | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PDIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 80V | 1.1A | 0.4Ohm | N-Channel | 360pF @ 25V | 270m Ω @ 780mA, 10V | 4V @ 250μA | 1.3A Ta | 16nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDU8874 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw258p-datasheets-9966.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 30V | 30V | 110W Tc | 35A | 0.0064Ohm | 240 mJ | N-Channel | 2.99pF @ 15V | 5.1m Ω @ 35A, 10V | 2.5V @ 250μA | 18A Ta 116A Tc | 72nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDB6021P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6021p-datasheets-7469.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 37W Tc | 28A | 80A | 0.03Ohm | P-Channel | 1.89pF @ 10V | 30m Ω @ 14A, 4.5V | 1.5V @ 250μA | 28A Ta | 28nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| IRFR120ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfr120ztrpbf-datasheets-7471.pdf | 100V | 8.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 190MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 35W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.3 ns | 26ns | 23 ns | 27 ns | 8.7A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 35W Tc | TO-252AA | 36 ns | 100V | N-Channel | 310pF @ 25V | 4 V | 190m Ω @ 5.2A, 10V | 4V @ 250μA | 8.7A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| FQPF28N15 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf28n15-datasheets-7482.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 60W Tc | 16.7A | 66.8A | 0.09Ohm | 300 mJ | N-Channel | 1.6pF @ 25V | 90m Ω @ 8.35A, 10V | 4V @ 250μA | 16.7A Tc | 52nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| FDMS8670AS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp5645-datasheets-5762.pdf | 8-PowerTDFN | 8-PQFN (5x6) | 30V | 2.5W Ta 78W Tc | N-Channel | 3.615pF @ 15V | 3mOhm @ 23A, 10V | 3V @ 1mA | 23A Ta 42A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S4L05AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipu50r950ceakma1-datasheets-5150.pdf | TO-220-3 | PG-TO220-3-1 | 60V | 107W Tc | N-Channel | 8.18pF @ 25V | 5.1mOhm @ 80A, 10V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP120N06S403AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp120n06s403aksa1-datasheets-7382.pdf | TO-220-3 | PG-TO220-3-1 | 60V | 167W Tc | N-Channel | 13.15pF @ 25V | 3.2mOhm @ 100A, 10V | 4V @ 120μA | 120A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDR840P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds4435a-datasheets-9379.pdf | 8-LSOP (0.130, 3.30mm Width) | 8 | yes | FAST SWITCHING | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.8W Ta | 10A | 0.012Ohm | P-Channel | 4.481pF @ 10V | 12m Ω @ 10A, 4.5V | 1.5V @ 250μA | 10A Ta | 60nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| BSO083N03MSGXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-bso083n03msgxuma1-datasheets-7239.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | DUAL | GULL WING | 1.56W | 1 | 9.4 ns | 5ns | 5.4 ns | 11.5 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.56W Ta | N-Channel | 2100pF @ 15V | 8.3m Ω @ 14A, 10V | 2V @ 250μA | 11A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB65R420CFDATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd50r399cpbtma1-datasheets-7000.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 650V | 83.3W Tc | N-Channel | 870pF @ 100V | 420mOhm @ 3.4A, 10V | 4.5V @ 340μA | 8.7A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ100N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz100n03lsgatma1-datasheets-7262.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | Not Qualified | S-PDSO-N5 | 2.6ns | 12A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 30W Tc | N-Channel | 1500pF @ 15V | 10m Ω @ 20A, 10V | 2.2V @ 250μA | 12A Ta 40A Tc | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| FDD2512 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd6778a-datasheets-4644.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 42W Ta | 6.7A | 20A | 0.42Ohm | 90 mJ | N-Channel | 344pF @ 75V | 420m Ω @ 2.2A, 10V | 4V @ 250μA | 6.7A Ta | 11nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSZ120P03NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz120p03ns3gatma1-datasheets-7292.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 52W | 1 | Not Qualified | S-PDSO-F5 | 13 ns | 11ns | 5 ns | 23 ns | 40A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -2.5V | 2.1W Ta 52W Tc | 0.02Ohm | 73 mJ | P-Channel | 3360pF @ 15V | 12m Ω @ 20A, 10V | 3.1V @ 73μA | 11A Ta 40A Tc | 45nC @ 10V | 6V 10V | ±25V | ||||||||||||||||||||||||||
| ATP404-TL-H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-atp404tlh-datasheets-7308.pdf | ATPAK (2 leads+tab) | ATPAK | 60V | 70W Tc | N-Channel | 6.4pF @ 20V | 7.2mOhm @ 48A, 10V | 95A Ta | 120nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740B | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-irf740b-datasheets-7338.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 134W Tc | TO-220AB | 10A | 40A | 0.54Ohm | 450 mJ | N-Channel | 1.8pF @ 25V | 540m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| NDD60N745U1T4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds335n-datasheets-5156.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 600V | 84W Tc | N-Channel | 440pF @ 50V | 745mOhm @ 3.25A, 10V | 4V @ 250μA | 6.6A Tc | 15nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3634-AZ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3634az-datasheets-7350.pdf | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (MP-3) | 200V | N-Channel | 270pF @ 10V | 600mOhm @ 3A, 10V | 4.5V @ 1mA | 6A Tc | 9nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ050N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-bsz050n03lsgatma1-datasheets-7310.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | Tin | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PDSO-N5 | 4ns | 16A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 50W Tc | 40A | 70 mJ | N-Channel | 2800pF @ 15V | 5m Ω @ 20A, 10V | 2.2V @ 250μA | 16A Ta 40A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SPI08N50C3XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp100n03s203-datasheets-9766.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3-1 | 560V | 83W Tc | N-Channel | 750pF @ 25V | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 7.6A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR120NTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr120ntrpbf-datasheets-8685.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 48W Tc | TO-252AA | 9.4A | 38A | 0.21Ohm | 91 mJ | N-Channel | 330pF @ 25V | 210m Ω @ 5.6A, 10V | 4V @ 250μA | 9.4A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2SK3702 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3702-datasheets-7374.pdf | TO-220-3 Full Pack | TO-220ML | 60V | 2W Ta 20W Tc | N-Channel | 775pF @ 20V | 55mOhm @ 9A, 10V | 18A Ta | 19nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL202SNH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl202snh6327xtsa1-datasheets-6490.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 10 Weeks | 6 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 8.26 ns | 27.5ns | 18.9 ns | 7.5A | 12V | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 950mV | 2W Ta | 30A | 0.022Ohm | 30 mJ | 20V | N-Channel | 1147pF @ 10V | 22m Ω @ 7.5A, 4.5V | 1.2V @ 30μA | 7.5A Ta | 8.7nC @ 10V | 2.5V 4.5V | ±12V |
