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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTB45N06T4 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd20n06l-datasheets-4856.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | N-Channel | 1.725pF @ 25V | 26mOhm @ 22.5A, 10V | 4V @ 250μA | 45A | 46nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu6n25tu-datasheets-5197.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 50W Tc | 5.3A | 21A | 0.73Ohm | 360 mJ | N-Channel | 1.45pF @ 25V | 730m Ω @ 2.65A, 10V | 5V @ 250μA | 5.3A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FQI11N40TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb11n40tm-datasheets-5253.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 3.13W Ta 147W Tc | 11.4A | 46A | 0.48Ohm | 520 mJ | N-Channel | 1.4pF @ 25V | 480m Ω @ 5.7A, 10V | 5V @ 250μA | 11.4A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD30N03S4L14ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipd30n03s4l14atma1-datasheets-7588.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 12 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 3 ns | 2ns | 12 ns | 30A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 31W Tc | 120A | 16 mJ | N-Channel | 980pF @ 25V | 13.6m Ω @ 30A, 10V | 2.2V @ 10μA | 30A Tc | 14nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| FDS6680 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7088n3-datasheets-5233.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 11.5A | 0.01Ohm | N-Channel | 2.07pF @ 15V | 10m Ω @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta | 27nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| HUFA75842P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76432s3st-datasheets-5029.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 230W Tc | TO-220AB | 43A | 0.042Ohm | N-Channel | 2.73pF @ 25V | 42m Ω @ 43A, 10V | 4V @ 250μA | 43A Tc | 175nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF740A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-irf8313pbf-datasheets-1563.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 125W Tc | TO-220AB | 10A | 40A | 0.55Ohm | 630 mJ | N-Channel | 1.03pF @ 25V | 550m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| BSP372NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsp372nh6327xtsa1-datasheets-7607.pdf | TO-261-4, TO-261AA | 1.7mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | EAR99 | AVALANCHE RATED | Tin | PG-SOT223-4 | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | 1 | NOT SPECIFIED | 1.8W | 1 | 150°C | 5.1 ns | 6.7ns | 47.3 ns | 1.8A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.4V | 1.8W Ta | 0.23Ohm | 28 pF | 100V | N-Channel | 329pF @ 25V | 230m Ω @ 1.8A, 10V | 1.8V @ 218μA | 1.8A Ta | 14.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IPN70R600P7SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn70r600p7satma1-datasheets-7624.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 6.9W Tc | 0.6Ohm | N-Channel | 364pF @ 400V | 600m Ω @ 1.8A, 10V | 3.5V @ 90μA | 8.5A Tc | 10.5nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD78CN10NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd78cn10ngatma1-datasheets-7794.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 31W | 1 | R-PSSO-G2 | 9 ns | 4ns | 3 ns | 13 ns | 13A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 31W Tc | 52A | 0.078Ohm | 17 mJ | N-Channel | 716pF @ 50V | 78m Ω @ 13A, 10V | 4V @ 12μA | 13A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| FQPF4N80 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf6n80-datasheets-6435.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 43W Tc | 2.2A | 8.8A | 460 mJ | N-Channel | 880pF @ 25V | 3.6 Ω @ 1.1A, 10V | 5V @ 250μA | 2.2A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFD9120 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-irfd9123-datasheets-7463.pdf | 4-DIP (0.300, 7.62mm) | 4 | no | EAR99 | unknown | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDIP-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1.3W Ta | 1A | 0.6Ohm | P-Channel | 390pF @ 25V | 600m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDZ7064AS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdz7064as-datasheets-7831.pdf | 30-WFBGA | 30 | no | unknown | NOT SPECIFIED | YES | BOTTOM | BALL | NOT SPECIFIED | 30 | NOT SPECIFIED | 1 | COMMERCIAL | R-PBGA-B30 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.2W Ta | 13.5A | 60A | 0.0056Ohm | N-Channel | 1.96pF @ 15V | 5.6m Ω @ 13.5A, 10V | 3V @ 1mA | 13.5A Ta | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7606TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7606tr-datasheets-7833.pdf | -30V | -3.6A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Contains Lead | 8 | 90mOhm | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1.8W | 1 | Not Qualified | S-PDSO-G8 | 20ns | -3.6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.8W Ta | 29A | P-Channel | 520pF @ 25V | 90m Ω @ 2.4A, 10V | 1V @ 250μA | 3.6A Ta | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RJK03C0DPA-00#J53 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ritrprr2b30-datasheets-0092.pdf | 8-PowerWDFN | 8-WPAK | 30V | 65W Tc | N-Channel | 11pF @ 10V | 2mOhm @ 35A, 10V | 2.5V @ 1mA | 70A Ta | 66nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF7N50U | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds4080n3-datasheets-2974.pdf | TO-220-3 Full Pack | TO-220F | 500V | 39W Tc | N-Channel | 940pF @ 25V | 1.5Ohm @ 2.5A, 10V | 5V @ 250μA | 5A Tc | 16.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75545S3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75545s3s-datasheets-4291.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 270W Tc | 75A | 0.01Ohm | N-Channel | 3.75pF @ 25V | 10m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 235nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMS8690 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp6030l-datasheets-5454.pdf | 8-PowerWDFN | 8 | yes | unknown | NOT SPECIFIED | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-XDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 100V | 2.5W Ta 37.8W Tc | 27A | 100A | 0.009Ohm | N-Channel | 1.68pF @ 15V | 9m Ω @ 14A, 10V | 3V @ 250μA | 14A Ta 27A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| HAT2172N-EL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hat2172nele-datasheets-7756.pdf | 8-PowerSOIC (0.154, 3.90mm Width) | 8-LFPAK-iV | 40V | 20W Tc | N-Channel | 2.42pF @ 10V | 7.8mOhm @ 15A, 10V | 30A Ta | 32nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75831SK8T | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75831sk8t-datasheets-7758.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 2.5W Ta | MS-012AA | 3A | 0.095Ohm | N-Channel | 1.175pF @ 25V | 95m Ω @ 3A, 10V | 4V @ 250μA | 3A Ta | 80nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSC057N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc057n03msgatma1-datasheets-7760.pdf | 8-PowerTDFN | 5 | 26 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 45W Tc | 15A | 284A | 0.0072Ohm | 25 mJ | N-Channel | 3100pF @ 15V | 5.7m Ω @ 30A, 10V | 2V @ 250μA | 15A Ta 71A Tc | 40nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| BSP125H6433XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp125h6327xtsa1-datasheets-9498.pdf | TO-261-4, TO-261AA | 10 Weeks | 600V | 1.8W Ta | N-Channel | 150pF @ 25V | 2.3V @ 94μA | 120mA Ta | 6.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8444TS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd2570-datasheets-9918.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | TO-263-5 | 40V | 181W Tc | N-Channel | 8.41pF @ 25V | 5mOhm @ 70A, 10V | 4V @ 250μA | 20A Ta 70A Tc | 338nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9321TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf9321trpbf-datasheets-7644.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 7.2MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | 2.5W | 1 | Other Transistors | 150°C | 21 ns | 79ns | 145 ns | 185 ns | -15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.8V | 2.5W Ta | -30V | P-Channel | 2590pF @ 25V | -1.8 V | 7.2m Ω @ 15A, 10V | 2.4V @ 50μA | 15A Ta | 98nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF7726TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irf7726trpbf-datasheets-7655.pdf | -30V | -7A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.048mm | 910μm | 3.048mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 26mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | DUAL | GULL WING | Single | 1.79W | 1 | 15 ns | 25ns | 107 ns | 227 ns | -7A | 20V | SILICON | SWITCHING | 30V | -2.5V | 1.79W Ta | 7A | -30V | P-Channel | 2204pF @ 25V | -2.5 V | 26m Ω @ 7A, 10V | 2.5V @ 250μA | 7A Ta | 69nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| NTMS4935NR2G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntp85n03g-datasheets-5025.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 810mW Ta | 10A | 0.0051Ohm | N-Channel | 3.639pF @ 25V | 5.1m Ω @ 7.5A, 10V | 2.5V @ 250μA | 10A Ta | 52.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD60R520CPATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd60r520cpatma1-datasheets-7718.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 600V | 66W Tc | N-Channel | 630pF @ 100V | 520mOhm @ 3.8A, 10V | 3.5V @ 250μA | 6.8A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R380C6ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb65r380c6atma1-datasheets-7719.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 650V | 83W Tc | N-Channel | 710pF @ 100V | 380mOhm @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2199R-EL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hat2199rele-datasheets-7721.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOP | 30V | 2W Ta | N-Channel | 1.06pF @ 10V | 16.5mOhm @ 5.5A, 10V | 11A Ta | 7.5nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP11N40 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp44n08-datasheets-6506.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 147W Tc | TO-220AB | 11.4A | 46A | 0.48Ohm | 520 mJ | N-Channel | 1.4pF @ 25V | 480m Ω @ 5.7A, 10V | 5V @ 250μA | 11.4A Tc | 35nC @ 10V | 10V | ±30V |
