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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF7326D2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irf7326d2trpbf-datasheets-1232.pdf | -30V | -3.6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2W | 1 | 8-SO | 440pF | -3.6A | 20V | 30V | 2W Ta | 160mOhm | -30V | P-Channel | 440pF @ 25V | 100mOhm @ 1.8A, 10V | 1V @ 250μA | 3.6A Ta | 25nC @ 10V | Schottky Diode (Isolated) | 100 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ180P03NS3EGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz180p03ns3egatma1-datasheets-7097.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | No SVHC | 8 | no | EAR99 | ESD PROTECTED | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 40W | 1 | Not Qualified | S-PDSO-F5 | 11 ns | 11ns | 3 ns | 20 ns | 39.5A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -2.5V | 2.1W Ta 40W Tc | 9A | P-Channel | 2220pF @ 15V | 18m Ω @ 20A, 10V | 3.1V @ 48μA | 9A Ta 39.5A Tc | 30nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||
| FDU6512A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd8424hf085a-datasheets-5336.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 3.8W Ta 43W Tc | 10.7A | 100A | 0.021Ohm | 90 mJ | N-Channel | 1.082pF @ 10V | 21m Ω @ 10.7A, 4.5V | 1.5V @ 250μA | 10.7A Ta 36A Tc | 19nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7201TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf7201trpbf-datasheets-7038.pdf | 30V | 7.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 30mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | 7 ns | 35ns | 19 ns | 21 ns | 7A | 20V | 30V | SILICON | SWITCHING | 1V | 2.5W Tc | 73 ns | 70 mJ | 30V | N-Channel | 550pF @ 25V | 1 V | 30m Ω @ 7.3A, 10V | 1V @ 250μA | 7.3A Tc | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSL606SNH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsl606snh6327xtsa1-datasheets-6993.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 10 Weeks | 6 | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2W | 1 | 4.5A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | 2W Ta | N-Channel | 657pF @ 25V | 60m Ω @ 4.5A, 10V | 2.3V @ 15μA | 4.5A Ta | 5.6nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R399CPBTMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi22n03s4l15aksa1-datasheets-4331.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8670 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdu6676as-datasheets-5712.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 21A | 105A | 0.0037Ohm | N-Channel | 4.04pF @ 15V | 3.7m Ω @ 21A, 10V | 3V @ 250μA | 21A Ta | 82nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQB6N50TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd1n50tm-datasheets-5268.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 3.13W Ta 130W Tc | 5.5A | 22A | 340 mJ | N-Channel | 790pF @ 25V | 1.3 Ω @ 2.8A, 10V | 5V @ 250μA | 5.5A Tc | 22nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQI16N25CTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi5n15tu-datasheets-4800.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 3.13W Ta 139W Tc | 15.6A | 62.4A | 0.27Ohm | 410 mJ | N-Channel | 1.08pF @ 25V | 270m Ω @ 7.8A, 10V | 4V @ 250μA | 15.6A Tc | 53.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2520T1H-T2-AT | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa610tat1a-datasheets-3242.pdf | 8-SMD, Flat Lead | 8-VSOF | 30V | 1W Ta | N-Channel | 1.1pF @ 15V | 13.2mOhm @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 10.8nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP085N06LGAKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp50cn10ngxksa1-datasheets-4808.pdf | TO-220-3 | PG-TO220-3-1 | 60V | N-Channel | 3.5pF @ 30V | 8.5mOhm @ 80A. 10V | 2V @ 125μA | 80A | 104nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI6N60CTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp16n25c-datasheets-8116.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 600V | 125W Tc | N-Channel | 810pF @ 25V | 2Ohm @ 2.75A, 10V | 4V @ 250μA | 5.5A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ180P03NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz180p03ns3gatma1-datasheets-6905.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 40W | 1 | Not Qualified | S-PDSO-F5 | 11ns | 39.6A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.1W Ta 40W Tc | 9A | P-Channel | 2220pF @ 15V | 18m Ω @ 20A, 10V | 3.1V @ 48μA | 9A Ta 39.6A Tc | 30nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| BSO051N03MS G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso051n03msg-datasheets-6927.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | compliant | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.56W Ta | 13A | 0.0051Ohm | N-Channel | 4300pF @ 15V | 5.1m Ω @ 18A, 10V | 2V @ 250μA | 14A Ta | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF7N50F | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds4072n7-datasheets-3063.pdf | TO-220-3 Full Pack | TO-220F | 500V | 38.5W Tc | N-Channel | 960pF @ 25V | 1.15Ohm @ 3A, 10V | 5V @ 250μA | 6A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75321S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75321s3st-datasheets-6940.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 55V | 93W Tc | N-Channel | 680pF @ 25V | 34mOhm @ 35A, 10V | 4V @ 250μA | 35A Tc | 44nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVA4153NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-nta4153nt1g-datasheets-6401.pdf | SOT-416 | Lead Free | 4 Weeks | 3 | ACTIVE (Last Updated: 1 week ago) | yes | Tin | e3 | 300mW | 110pF | 3.7 ns | 4.4ns | 7.6 ns | 25 ns | 915mA | 6V | 20V | 230 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75337S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76407d3-datasheets-5489.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 175W Tc | 75A | 0.014Ohm | N-Channel | 1.775pF @ 25V | 14m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 109nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N30 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqpf9n30-datasheets-6947.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 300V | 300V | 42W Tc | 6A | 24A | 0.45Ohm | 420 mJ | N-Channel | 740pF @ 25V | 450m Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 22nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSC079N03LSCGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-bsc079n03lscgatma1-datasheets-6931.pdf | 8-PowerTDFN | Lead Free | 5 | 26 Weeks | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2.5W | 1 | R-PDSO-F5 | 3 ns | 2.4ns | 14 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 30W Tc | 200A | N-Channel | 1600pF @ 15V | 7.9m Ω @ 30A, 10V | 2.2V @ 250μA | 14A Ta 50A Tc | 19nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQP6N50C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf14n15-datasheets-5250.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 98W Tc | TO-220AB | 5.5A | 22A | 300 mJ | N-Channel | 700pF @ 25V | 1.2 Ω @ 2.8A, 10V | 4V @ 250μA | 5.5A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQB7N30TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd24n08tf-datasheets-5591.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 3.13W Ta 85W Tc | 7A | 28A | 0.7Ohm | 380 mJ | N-Channel | 610pF @ 25V | 700m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDB6690S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6690s-datasheets-6895.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 48W Tc | 42A | 140A | 0.0155Ohm | 140 mJ | N-Channel | 1.238pF @ 15V | 15.5m Ω @ 21A, 10V | 3V @ 1mA | 42A Ta | 15nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPW50R280CEFKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ir3502bmtrpbf-datasheets-5925.pdf | TO-247-3 | PG-TO247-3 | 500V | 92W Tc | N-Channel | 773pF @ 100V | 280mOhm @ 4.2A, 13V | 3.5V @ 350μA | 13A Tc | 32.6nC @ 10V | Super Junction | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK6026DPP-E0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk6026dppe0t2-datasheets-6899.pdf | TO-220-3 Full Pack | TO-220FP | 600V | 28.5W Tc | N-Channel | 440pF @ 25V | 2.4Ohm @ 2.5A, 10V | 5A Ta | 14nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD20AN06A0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd6696-datasheets-4782.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 90W Tc | TO-252AA | 8A | 0.02Ohm | 50 mJ | N-Channel | 950pF @ 25V | 20m Ω @ 45A, 10V | 4V @ 250μA | 8A Ta 45A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R520E6XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp90n06s404aksa1-datasheets-5435.pdf | TO-220-3 | PG-TO220-3 | 600V | 66W Tc | N-Channel | 512pF @ 100V | 520mOhm @ 2.8A, 10V | 3.5V @ 230μA | 8.1A Tc | 23.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2705TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irlr2705trpbf-datasheets-6642.pdf | 55V | 24A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 40mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | Tin | No | e3 | GULL WING | 260 | Single | 30 | 46W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.9 ns | 100ns | 29 ns | 21 ns | 28A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 68W Tc | TO-252AA | 110 ns | 55V | N-Channel | 880pF @ 25V | 2 V | 40m Ω @ 17A, 10V | 2V @ 250μA | 28A Tc | 25nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||
| FDMS8672AS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp5680-datasheets-3573.pdf | 8-PowerTDFN | 5 | unknown | NOT SPECIFIED | YES | DUAL | NO LEAD | 8 | 1 | COMMERCIAL | R-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta 70W Tc | 18A | 200A | 0.005Ohm | 253 mJ | N-Channel | 2.6pF @ 15V | 5m Ω @ 18A, 10V | 3V @ 1mA | 18A Ta 28A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf7404pbf-datasheets-5483.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | 240 | 30 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 150W Tc | TO-220AB | 28A | 110A | 0.077Ohm | 230 mJ | N-Channel | 1.7pF @ 25V | 77m Ω @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 10V | ±20V |
