Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQP2N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp2n60-datasheets-8134.pdf | TO-220-3 | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 64W Tc | TO-220AB | 2.4A | 9.6A | 140 mJ | N-Channel | 350pF @ 25V | 4.7 Ω @ 1.2A, 10V | 4V @ 250μA | 2.4A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB65N06TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd17n08ltf-datasheets-4392.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.75W Ta 150W Tc | 65A | 260A | 0.016Ohm | 650 mJ | N-Channel | 2.41pF @ 25V | 16m Ω @ 32.5A, 10V | 4V @ 250μA | 65A Tc | 65nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R660CFDFKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ips090n03lgakma1-datasheets-5210.pdf | TO-247-3 | PG-TO247-3 | 700V | 62.5W Tc | N-Channel | 615pF @ 100V | 660mOhm @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF17P10 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf17p10-datasheets-8140.pdf | TO-3P-3 Full Pack | TO-3PF | 100V | 56W Tc | P-Channel | 1.1pF @ 25V | 190mOhm @ 6.2A, 10V | 4V @ 250μA | 12.4A Tc | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6676AS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdfma2p853t-datasheets-5559.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 70W Ta | 90A | 100A | 0.0057Ohm | 250 mJ | N-Channel | 2.5pF @ 15V | 5.7m Ω @ 16A, 10V | 3V @ 1mA | 90A Ta | 64nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7413ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7413ztrpbf-datasheets-8068.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 10MOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8.7 ns | 6.3ns | 3.8 ns | 11 ns | 13A | 20V | 30V | SILICON | SWITCHING | 6.3 mm | 1.8V | 2.5W Ta | 36 ns | 32 mJ | 30V | N-Channel | 1210pF @ 15V | 1.8 V | 10m Ω @ 13A, 10V | 2.25V @ 25μA | 13A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD65R650CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd65r650ceauma1-datasheets-8078.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 7A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 86W Tc | 18A | 0.65Ohm | 142 mJ | N-Channel | 440pF @ 100V | 650m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP5412NG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd20n06t4-datasheets-4854.pdf | TO-220-3 | TO-220AB | 60V | 125W Tc | N-Channel | 3.22pF @ 25V | 14mOhm @ 30A, 10V | 4V @ 250μA | 60A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU044AN03L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdu8876-datasheets-5396.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 160W Tc | 35A | 0.0044Ohm | 690 mJ | N-Channel | 5.16pF @ 15V | 3.9m Ω @ 35A, 10V | 2.5V @ 250μA | 21A Ta 35A Tc | 118nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD3580 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdu3580-datasheets-7586.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 3.8W Ta 42W Tc | 7.7A | 50A | 0.029Ohm | 245 mJ | N-Channel | 1.76pF @ 40V | 29m Ω @ 7.7A, 10V | 4V @ 250μA | 7.7A Ta | 49nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC097N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-bsc097n06nsatma1-datasheets-7935.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 2ns | 46A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8V | 2.5W Ta 36W Tc | 12A | 0.0097Ohm | 13 mJ | N-Channel | 1075pF @ 30V | 9.7m Ω @ 40A, 10V | 3.3V @ 14μA | 46A Tc | 15nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSZ0506NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz0506nsatma1-datasheets-8004.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | EAR99 | Tin | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 2.4ns | 40A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 27W Tc | 15A | 160A | 0.0053Ohm | 20 mJ | N-Channel | 950pF @ 15V | 4.4m Ω @ 20A, 10V | 2V @ 250μA | 15A Ta 40A Tc | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NDD60N550U1-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndp7061-datasheets-4715.pdf | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 600V | 94W Tc | N-Channel | 540pF @ 50V | 550mOhm @ 4A, 10V | 4V @ 250μA | 8.2A Tc | 18nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L06AKSA2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipu50r3k0cebkma1-datasheets-4860.pdf | TO-220-3 | PG-TO220-3-1 | 55V | 250W Tc | N-Channel | 3.8pF @ 25V | 6.3mOhm @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2716AGR-E1-AT | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa2716agre1at-datasheets-8029.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-PSOP | 30V | 2W Ta | P-Channel | 3pF @ 10V | 7mOhm @ 7A, 10V | 14A Ta | 95nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6614A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds7060n7-datasheets-2991.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 9.3A | 0.018Ohm | N-Channel | 1.16pF @ 15V | 18m Ω @ 9.3A, 10V | 3V @ 250μA | 9.3A Ta | 17nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2520T1H-T1-AT | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ucc5696pn-datasheets-2381.pdf | 8-SMD, Flat Lead | 8-VSOF | 30V | 1W Ta | N-Channel | 1.1pF @ 15V | 13.2mOhm @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 10.8nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP5N80 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqpf12p10-datasheets-5258.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 140W Tc | TO-220AB | 4.8A | 19.2A | 590 mJ | N-Channel | 1.25pF @ 25V | 2.6 Ω @ 2.4A, 10V | 5V @ 250μA | 4.8A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0904NSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0904nsiatma1-datasheets-7874.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | R-PDSO-F5 | 4.4ns | 20A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 37W Tc | 0.0052Ohm | N-Channel | 1100pF @ 15V | 3.7m Ω @ 30A, 10V | 2V @ 250μA | 20A Ta 78A Tc | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| HUF76407D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-huf76407d3st-datasheets-7983.pdf | 60V | 11A | TO-252-3 | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 92mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 38W | GULL WING | Single | 38W | 1 | FET General Purpose Power | R-PSSO-G2 | 350pF | 5 ns | 32ns | 45 ns | 43 ns | 12A | 16V | DRAIN | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 1V | TO-252AA | 77mOhm | 60V | 92 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N50T | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu6n25tu-datasheets-5197.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 50W Tc | 5.3A | 21A | 0.73Ohm | 360 mJ | N-Channel | 1.45pF @ 25V | 730m Ω @ 2.65A, 10V | 5V @ 250μA | 5.3A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB55N06TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb9n50cftm-datasheets-7928.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.75W Ta 133W Tc | 55A | 220A | 0.02Ohm | 545 mJ | N-Channel | 1.69pF @ 25V | 20m Ω @ 27.5A, 10V | 4V @ 250μA | 55A Tc | 46nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ088N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz088n03msgatma1-datasheets-7900.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | Not Qualified | R-PDSO-N5 | 3ns | 11A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 35W Tc | 40A | 0.0097Ohm | 25 mJ | N-Channel | 2100pF @ 15V | 8m Ω @ 20A, 10V | 2V @ 250μA | 11A Ta 40A Tc | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTB45N06T4 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd20n06l-datasheets-4856.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | N-Channel | 1.725pF @ 25V | 26mOhm @ 22.5A, 10V | 4V @ 250μA | 45A | 46nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu6n25tu-datasheets-5197.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 50W Tc | 5.3A | 21A | 0.73Ohm | 360 mJ | N-Channel | 1.45pF @ 25V | 730m Ω @ 2.65A, 10V | 5V @ 250μA | 5.3A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI11N40TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb11n40tm-datasheets-5253.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 3.13W Ta 147W Tc | 11.4A | 46A | 0.48Ohm | 520 mJ | N-Channel | 1.4pF @ 25V | 480m Ω @ 5.7A, 10V | 5V @ 250μA | 11.4A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD30N03S4L14ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipd30n03s4l14atma1-datasheets-7588.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 12 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 3 ns | 2ns | 12 ns | 30A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 31W Tc | 120A | 16 mJ | N-Channel | 980pF @ 25V | 13.6m Ω @ 30A, 10V | 2.2V @ 10μA | 30A Tc | 14nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| FDS6680 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7088n3-datasheets-5233.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 11.5A | 0.01Ohm | N-Channel | 2.07pF @ 15V | 10m Ω @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta | 27nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75842P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76432s3st-datasheets-5029.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 230W Tc | TO-220AB | 43A | 0.042Ohm | N-Channel | 2.73pF @ 25V | 42m Ω @ 43A, 10V | 4V @ 250μA | 43A Tc | 175nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-irf8313pbf-datasheets-1563.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 125W Tc | TO-220AB | 10A | 40A | 0.55Ohm | 630 mJ | N-Channel | 1.03pF @ 25V | 550m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±30V |
