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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP120N06S402AKSA2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp120n06s402aksa1-datasheets-8144.pdf | TO-220-3 | PG-TO220-3-1 | 60V | 188W Tc | N-Channel | 15.75pF @ 25V | 2.8mOhm @ 100A, 10V | 4V @ 140μA | 120A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR610DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir610dpt1re3-datasheets-8328.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 150°C | 9 ns | 20 ns | 8.6A | 20V | 104W Tc | 200V | N-Channel | 1380pF @ 100V | 31.9m Ω @ 10A, 10V | 4V @ 250μA | 35.4A Tc | 38nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD044AN03L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdu8876-datasheets-5396.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 160W Tc | 21A | 0.0044Ohm | 690 mJ | N-Channel | 5.16pF @ 15V | 3.9m Ω @ 35A, 10V | 2.5V @ 250μA | 21A Ta 35A Tc | 118nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB034N06L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb034n06l3gatma1-datasheets-8225.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 167W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25 ns | 78ns | 13 ns | 64 ns | 90A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | N-Channel | 13000pF @ 30V | 3.4m Ω @ 90A, 10V | 2.2V @ 93μA | 90A Tc | 79nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STB6N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std6n80k5-datasheets-3682.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 26 Weeks | 3.949996g | ACTIVE (Last Updated: 8 months ago) | EAR99 | GULL WING | STB6N | 1 | Single | 1 | R-PSSO-G2 | 4.5A | 30V | SILICON | DRAIN | SWITCHING | 800V | 800V | 85W Tc | 85 mJ | N-Channel | 255pF @ 100V | 1.6 Ω @ 2A, 10V | 5V @ 100μA | 4.5A Tc | 7.5nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD060N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd060n03lgatma1-datasheets-8101.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.41mm | 6.22mm | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 56W | 1 | Not Qualified | R-PSSO-G2 | 5 ns | 3ns | 20 ns | 50A | 20V | 30V | SILICON | DRAIN | SWITCHING | 56W Tc | 0.009Ohm | 60 mJ | 30V | N-Channel | 2400pF @ 15V | 6m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTB5412NT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd20n06t4-datasheets-4854.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 125W Tc | 60A | 155A | 0.014Ohm | 180 mJ | N-Channel | 3.22pF @ 25V | 14m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ATP301-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-atp301tlh-datasheets-8297.pdf | ATPAK (2 leads+tab) | 6.5mm | 1.5mm | 7.3mm | Lead Free | 2 | 27 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | GULL WING | 3 | Single | 70W | 1 | Other Transistors | R-PSSO-G2 | 32 ns | 130ns | 190 ns | 330 ns | -28A | 20V | SILICON | DRAIN | 70W Tc | 0.075Ohm | 54 mJ | 100V | P-Channel | 4000pF @ 20V | 75m Ω @ 14A, 10V | 28A Ta | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRLZ14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irlz14pbf-datasheets-8320.pdf | 60V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 10A | 10V | 60V | 2V | 43W Tc | 130 ns | 200mOhm | 60V | N-Channel | 400pF @ 25V | 2 V | 200mOhm @ 6A, 5V | 2V @ 250μA | 10A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| FDS6570A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6570a-datasheets-8338.pdf | 20V | 15A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 20 ns | 27ns | 35 ns | 95 ns | 15A | 8V | SILICON | SWITCHING | 2.5W Ta | 0.0075Ohm | 20V | N-Channel | 4700pF @ 10V | 900 mV | 7.5m Ω @ 15A, 4.5V | 1.5V @ 250μA | 15A Ta | 66nC @ 5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| NTD4808N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-ntd4808n1g-datasheets-8346.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 2 Weeks | 4 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 2W | 1 | FET General Purpose Power | R-PSIP-T3 | 102ns | 5.6 ns | 11 ns | 63A | 20V | SILICON | DRAIN | SWITCHING | 1.4W Ta 54.6W Tc | 9.8A | 30V | N-Channel | 1538pF @ 12V | 8m Ω @ 30A, 10V | 2.5V @ 250μA | 10A Ta 63A Tc | 13nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDWS86068-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | /files/onsemiconductor-fdws86068f085-datasheets-8350.pdf | 8-PowerTDFN | 25 Weeks | yes | not_compliant | e3 | Tin (Sn) | 100V | 214W Ta | N-Channel | 2220pF @ 50V | 6.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD5N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf5n95k5-datasheets-2982.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | 3.949996g | 3 | EAR99 | No | GULL WING | STD5N | 1 | Single | 1 | R-PSSO-G2 | 12 ns | 16ns | 25 ns | 32 ns | 3.5A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | 70 mJ | 950V | N-Channel | 220pF @ 100V | 2.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3.5A Tc | 12.5nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R1K0CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipa65r1k0cexksa1-datasheets-8383.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 7.2A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 68W Tc | TO-220AB | 12A | 1Ohm | 50 mJ | N-Channel | 328pF @ 100V | 1 Ω @ 1.5A, 10V | 3.5V @ 200μA | 7.2A Tc | 15.3nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTBV45N06T4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-ntd3055l104g-datasheets-5587.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | N-Channel | 1.725pF @ 25V | 26mOhm @ 22.5A, 10V | 4V @ 250μA | 45A Ta | 46nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75939P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf76445s3st-datasheets-0223.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 180W Tc | TO-220AB | 22A | 0.125Ohm | N-Channel | 2.2pF @ 25V | 125m Ω @ 22A, 10V | 4V @ 250μA | 22A Tc | 152nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC032NE2LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc032ne2lsatma1-datasheets-7625.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | R-PDSO-N5 | 2.8ns | 22A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 78W Tc | 336A | 20 mJ | N-Channel | 1200pF @ 12V | 3.2m Ω @ 30A, 10V | 2V @ 250μA | 22A Ta 84A Tc | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDU8870 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw252p-datasheets-5143.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 160W Tc | 21A | 0.0044Ohm | 690 mJ | N-Channel | 5.16pF @ 15V | 3.9m Ω @ 35A, 10V | 2.5V @ 250μA | 21A Ta 160A Tc | 118nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP13AN06A0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp13an06a0-datasheets-8124.pdf | TO-220-3 | TO-220-3 | 60V | 115W Tc | N-Channel | 1.35pF @ 25V | 13.5mOhm @ 62A, 10V | 4V @ 250μA | 10.9A Ta 62A Tc | 29nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N04S408ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd50n04s408atma1-datasheets-7803.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 46W Tc | 50A | 200A | 0.0079Ohm | 55 mJ | N-Channel | 1780pF @ 6V | 7.9m Ω @ 50A, 10V | 4V @ 17μA | 50A Tc | 22.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP2N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp2n60-datasheets-8134.pdf | TO-220-3 | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 64W Tc | TO-220AB | 2.4A | 9.6A | 140 mJ | N-Channel | 350pF @ 25V | 4.7 Ω @ 1.2A, 10V | 4V @ 250μA | 2.4A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB65N06TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd17n08ltf-datasheets-4392.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.75W Ta 150W Tc | 65A | 260A | 0.016Ohm | 650 mJ | N-Channel | 2.41pF @ 25V | 16m Ω @ 32.5A, 10V | 4V @ 250μA | 65A Tc | 65nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R660CFDFKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ips090n03lgakma1-datasheets-5210.pdf | TO-247-3 | PG-TO247-3 | 700V | 62.5W Tc | N-Channel | 615pF @ 100V | 660mOhm @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF17P10 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf17p10-datasheets-8140.pdf | TO-3P-3 Full Pack | TO-3PF | 100V | 56W Tc | P-Channel | 1.1pF @ 25V | 190mOhm @ 6.2A, 10V | 4V @ 250μA | 12.4A Tc | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP120AN15A0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp8443-datasheets-9377.pdf | TO-220-3 | TO-220-3 | 150V | 65W Tc | N-Channel | 770pF @ 25V | 120mOhm @ 4A, 10V | 4V @ 250μA | 2.8A Ta 14A Tc | 14.5nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP120N06S402AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp120n06s402aksa1-datasheets-8144.pdf | TO-220-3 | PG-TO220-3-1 | 60V | 188W Tc | N-Channel | 15.75pF @ 25V | 2.8mOhm @ 100A, 10V | 4V @ 140μA | 120A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS247ZE3043AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bts247ze3043aksa1-datasheets-8146.pdf | TO-220-5 | P-TO220-5-43 | 55V | 120W Tc | N-Channel | 1.73pF @ 25V | 18mOhm @ 12A, 10V | 2V @ 90μA | 33A Tc | 90nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD26AN06A0 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdd6796-datasheets-6238.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 75W Tc | TO-252AA | 7A | 0.058Ohm | 35 mJ | N-Channel | 800pF @ 25V | 26m Ω @ 36A, 10V | 4V @ 250μA | 7A Ta 36A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI32N20CTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi7p06tu-datasheets-4760.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 200V | 3.13W Ta 156W Tc | N-Channel | 2.22pF @ 25V | 82mOhm @ 14A, 10V | 4V @ 250μA | 28A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rirfm008b30-datasheets-2685.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 100V | 2.5W Ta 42W Tc | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 10V | ±20V |
