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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| UPA1807GR-9JG-E1-A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 30V | N-Channel | 1pF @ 10V | 10mOhm @ 6A, 10V | 2.5V @ 1mA | 12A Ta | 19nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD12P10TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd3n50ctm-datasheets-4574.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.5W Ta 50W Tc | 9.4A | 37.6A | 0.29Ohm | 370 mJ | P-Channel | 800pF @ 25V | 290m Ω @ 4.7A, 10V | 4V @ 250μA | 9.4A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| BSL307SPH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-bsl307sph6327xtsa1-datasheets-6618.pdf | -30V | -5.5A | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 1mm | 1.6mm | Lead Free | 6 | 10 Weeks | No SVHC | 6 | EAR99 | AVALANCHE RATED | Tin | No | e3 | AEC-Q101 | Halogen Free | DUAL | GULL WING | Single | 1 | 7.3 ns | 8.4ns | 29 ns | 36.4 ns | 5.5A | 20V | -30V | SILICON | SWITCHING | 30V | -1.5V | 2W Ta | 22A | 0.043Ohm | 44 mJ | P-Channel | 805pF @ 25V | 43m Ω @ 5.5A, 10V | 2V @ 40μA | 5.5A Ta | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| NTP35N15 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntp35n15g-datasheets-0344.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4198FS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4210-datasheets-7071.pdf | TO-220-3 | TO-220-3 | 600V | 2W Ta 30W Tc | N-Channel | 360pF @ 30V | 2.34Ohm @ 2.5A, 10V | 4A Tc | 14.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8326TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8326trpbf-datasheets-6875.pdf | 8-PowerTDFN | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 2.8W | 1 | FET General Purpose Power | S-PDSO-F5 | 12 ns | 35ns | 12 ns | 18 ns | 19A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7V | 2.8W Ta 37W Tc | 70A | 0.0067Ohm | 30V | N-Channel | 2496pF @ 10V | 4.7m Ω @ 20A, 10V | 2.2V @ 50μA | 19A Ta | 39nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP80N06S2L06AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipu50r3k0cebkma1-datasheets-4860.pdf | TO-220-3 | PG-TO220-3-1 | 55V | 250W Tc | N-Channel | 3.8pF @ 25V | 6.3mOhm @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB6690S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6690s-datasheets-6895.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 48W Tc | 42A | 140A | 0.0155Ohm | 140 mJ | N-Channel | 1.238pF @ 15V | 15.5m Ω @ 21A, 10V | 3V @ 1mA | 42A Ta | 15nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLHS2242TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlhs2242trpbf-datasheets-6771.pdf | 6-PowerVDFN | Lead Free | 6 | 12 Weeks | No SVHC | 31MOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 9.6W | 1 | Other Transistors | 7.9 ns | 54ns | 66 ns | 54 ns | 7.2A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -800mV | 2.1W Ta 9.6W Tc | 34A | -20V | P-Channel | 877pF @ 10V | -800 mV | 31m Ω @ 8.5A, 4.5V | 1.1V @ 10μA | 7.2A Ta 15A Tc | 12nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| IPI80N06S405AKSA2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp120n06ngaksa1-datasheets-6534.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75344S3ST | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-huf75925d3st-datasheets-4424.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 285W Tc | 75A | 0.008Ohm | N-Channel | 3.2pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 210nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| HUFA75637P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76423d3st-datasheets-4452.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 155W Tc | TO-220AB | 44A | 0.03Ohm | N-Channel | 1.7pF @ 25V | 30m Ω @ 44A, 10V | 4V @ 250μA | 44A Tc | 108nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6217TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf6217trpbf-datasheets-6797.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | 12 ns | 7.2ns | 16 ns | 14 ns | -700mA | 20V | SILICON | SWITCHING | 150V | -5V | 2.5W Ta | 0.7A | -150V | P-Channel | 150pF @ 25V | 20 V | 2.4 Ω @ 420mA, 10V | 5V @ 250μA | 700mA Ta | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| BSZ0909NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz0909nsatma1-datasheets-6553.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | 8 | 1 | Not Qualified | S-PDSO-N5 | 4.5 ns | 2.2ns | 2 ns | 16 ns | 36A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34V | 34V | 2.1W Ta 25W Tc | 144A | 0.012Ohm | 9 mJ | N-Channel | 1310pF @ 15V | 12m Ω @ 20A, 10V | 2V @ 250μA | 9A Ta 36A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| FDMC8676 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdmc8676-datasheets-6693.pdf | 8-PowerTDFN | 5 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | NO LEAD | 260 | 8 | 30 | 1 | COMMERCIAL | R-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.3W Ta 41W Tc | 16A | 60A | 0.0059Ohm | 216 mJ | N-Channel | 1.935pF @ 15V | 5.9m Ω @ 14.7A, 10V | 3V @ 250μA | 16A Ta 18A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| UPA1820GR-9JG-E1-A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ucc5680pw28-datasheets-2319.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 20V | N-Channel | 2.02pF @ 10V | 8.6mOhm @ 6A, 4.5V | 1.5V @ 1mA | 12A Ta | 27nC @ 4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS9410A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-nds9410a-datasheets-6707.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 7.3A | 0.028Ohm | N-Channel | 830pF @ 15V | 28m Ω @ 7.3A, 10V | 3V @ 250μA | 7.3A Ta | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFL024NTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfl024ntrpbf-datasheets-6595.pdf | 55V | 2.8A | TO-261-4, TO-261AA | 6.6802mm | 1.4478mm | 3.7mm | Contains Lead, Lead Free | 4 | 12 Weeks | No SVHC | 75mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.1W | 1 | R-PDSO-G4 | 8.1 ns | 13.4ns | 17.7 ns | 22.2 ns | 2.8A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 1W Ta | 53 ns | 0.0028A | 55V | N-Channel | 400pF @ 25V | 4 V | 75m Ω @ 2.8A, 10V | 4V @ 250μA | 2.8A Ta | 18.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| NTTFS4941NTAG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nttfs4941ntag-datasheets-6735.pdf | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 30V | 840mW Ta 25.5W Tc | N-Channel | 1.619pF @ 15V | 6.2mOhm @ 20A, 10V | 2.2V @ 250μA | 8.3A Ta 46A Tc | 22.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU4N50TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu4n50tu-datasheets-6748.pdf | TO-251-3 Short Leads, IPak, TO-251AA | yes | unknown | 3 | 500V | 2.5W Ta 45W Tc | N-Channel | 460pF @ 25V | 2.7 Ω @ 1.3A, 10V | 5V @ 250μA | 2.6A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75329D3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75329d3-datasheets-6761.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 55V | 128W Tc | N-Channel | 1.06pF @ 25V | 26mOhm @ 20A, 10V | 4V @ 250μA | 20A Tc | 65nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R520CPBTMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd60r520cpbtma1-datasheets-6763.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 600V | 66W Tc | N-Channel | 630pF @ 100V | 520mOhm @ 3.8A, 10V | 3.5V @ 250μA | 6.8A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8678S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdmc8678s-datasheets-6765.pdf | 8-PowerTDFN | 5 | yes | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | NO LEAD | 260 | 240 | 30 | 1 | COMMERCIAL | R-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.3W Ta 41W Tc | MO-240BA | 15A | 60A | 0.0052Ohm | 181 mJ | N-Channel | 2.075pF @ 15V | 5.2m Ω @ 15A, 10V | 3V @ 1mA | 15A Ta 18A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| RFP12N10L | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/rochesterelectronicsllc-rfp12n10l-datasheets-6767.pdf | 100V | 12A | TO-220-3 | Lead Free | 3 | 3 | no | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 60W | 1 | COMMERCIAL | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tc | TO-220AB | 0.2Ohm | 100V | N-Channel | 900pF @ 25V | 200m Ω @ 12A, 5V | 2V @ 250μA | 12A Tc | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| BUZ31HXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buz31hxksa1-datasheets-6769.pdf | TO-220-3 | PG-TO220-3 | 200V | 95W Tc | N-Channel | 1.12pF @ 25V | 200mOhm @ 9A, 5V | 4V @ 1mA | 14.5A Tc | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDR844P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds4770-datasheets-5415.pdf | 8-LSOP (0.130, 3.30mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.8W Ta | 10A | 0.011Ohm | P-Channel | 4.951pF @ 10V | 11m Ω @ 10A, 4.5V | 1.5V @ 250μA | 10A Ta | 74nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| NDF11N50ZG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndf11n50zg-datasheets-6571.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 500V | 500V | 39W Tc | TO-220AB | 6.7A | 42A | 0.52Ohm | 420 mJ | N-Channel | 1.645pF @ 25V | 520m Ω @ 4.5A, 10V | 4.5V @ 100μA | 12A Tc | 69nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FQPF3N50C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf3n50c-datasheets-6654.pdf | TO-220-3 Full Pack | TO-220F | 500V | 25W Tc | N-Channel | 365pF @ 25V | 2.5Ohm @ 1.5A, 10V | 4V @ 250μA | 3A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP135L6906HTSA1 | Rochester Electronics, LLC | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-261-4, TO-261AA | PG-SOT223-4 | 600V | 1.8W Ta | N-Channel | 146pF @ 25V | 45Ohm @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ130N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-bsz130n03msgatma1-datasheets-6663.pdf | 8-PowerTDFN | 5 | 18 Weeks | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.1W Ta 25W Tc | 9A | 140A | 0.015Ohm | 9 mJ | N-Channel | 1300pF @ 15V | 11.5m Ω @ 20A, 10V | 2V @ 250μA | 9A Ta 35A Tc | 17nC @ 10V | 4.5V 10V | ±20V |
