Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTMS4935NR2G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntp85n03g-datasheets-5025.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 810mW Ta | 10A | 0.0051Ohm | N-Channel | 3.639pF @ 25V | 5.1m Ω @ 7.5A, 10V | 2.5V @ 250μA | 10A Ta | 52.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD60R520CPATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd60r520cpatma1-datasheets-7718.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 600V | 66W Tc | N-Channel | 630pF @ 100V | 520mOhm @ 3.8A, 10V | 3.5V @ 250μA | 6.8A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R380C6ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb65r380c6atma1-datasheets-7719.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 650V | 83W Tc | N-Channel | 710pF @ 100V | 380mOhm @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2199R-EL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hat2199rele-datasheets-7721.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOP | 30V | 2W Ta | N-Channel | 1.06pF @ 10V | 16.5mOhm @ 5.5A, 10V | 11A Ta | 7.5nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP11N40 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp44n08-datasheets-6506.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 147W Tc | TO-220AB | 11.4A | 46A | 0.48Ohm | 520 mJ | N-Channel | 1.4pF @ 25V | 480m Ω @ 5.7A, 10V | 5V @ 250μA | 11.4A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPB022N04LGATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb65r380c6atma1-datasheets-7720.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 40V | 167W Tc | N-Channel | 13pF @ 20V | 2.2mOhm @ 90A, 10V | 2V @ 95μA | 90A Tc | 166nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7188TRPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfh7188trpbf-datasheets-7736.pdf | 8-PowerTDFN | PQFN (5x6) | 100V | 3.8W Ta 132W Tc | N-Channel | 2.116pF @ 50V | 6mOhm @ 50A, 10V | 3.9V @ 150μA | 18A Ta 105A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7204TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7204trpbf-datasheets-7727.pdf | -20V | -5.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 60mOhm | 8 | LOGIC LEVEL COMPATIBLE | No | DUAL | GULL WING | Single | 2.5W | 1 | 5.3A | 14 ns | 26ns | 68 ns | 100 ns | -5.3A | 12V | -20V | SILICON | SWITCHING | 20V | -2.5V | 2.5W Tc | 100 ns | -20V | P-Channel | 860pF @ 10V | -2.5 V | 60m Ω @ 5.3A, 10V | 2.5V @ 250μA | 5.3A Ta | 25nC @ 10V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||
| FQP6P25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf17n08-datasheets-4648.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 90W Tc | TO-220AB | 6A | 24A | 540 mJ | P-Channel | 780pF @ 25V | 1.1 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 27nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| MTP23P06VG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mtp23p06vg-datasheets-7747.pdf | TO-220-3 | 3 | no | AVALANCHE RATED | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 90W Tc | TO-220AB | 23A | 81A | 0.12Ohm | 794 mJ | P-Channel | 1.62pF @ 25V | 120m Ω @ 11.5A, 10V | 4V @ 250μA | 23A Tc | 50nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||
| IRF7205TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7205trpbf-datasheets-7529.pdf | -30V | -5.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 70mOhm | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | Other Transistors | 14 ns | 21ns | 71 ns | 97 ns | -4.6A | 20V | -30V | SILICON | SWITCHING | 30V | -3V | 2.5W Tc | 100 ns | -30V | P-Channel | 870pF @ 10V | -3 V | 70m Ω @ 4.6A, 10V | 3V @ 250μA | 4.6A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||
| UPA2717AGR-E1-AT | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa2717agre1at-datasheets-7545.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-PSOP | 30V | P-Channel | 3.55pF @ 10V | 5.5mOhm @ 7.5A, 10V | 2.5V @ 1mA | 15A Ta | 130nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76419S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76419s3s-datasheets-7557.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 75W Tc | 29A | 0.04Ohm | N-Channel | 900pF @ 25V | 35m Ω @ 29A, 10V | 3V @ 250μA | 29A Tc | 28nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| FQP9N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf2n30-datasheets-5799.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 147W Tc | TO-220AB | 9A | 36A | 0.73Ohm | 360 mJ | N-Channel | 1.45pF @ 25V | 730m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| FQAF19N20 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb11n40tm-datasheets-5254.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 85W Tc | 15A | 60A | 0.15Ohm | 250 mJ | N-Channel | 1.6pF @ 25V | 150m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| FQAF28N15 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa6n70-datasheets-9124.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 102W Tc | 22A | 88A | 0.09Ohm | 300 mJ | N-Channel | 1.6pF @ 25V | 90m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 52nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| FDMS8670 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp3205-datasheets-8897.pdf | 8-PowerTDFN | 5 | unknown | YES | DUAL | FLAT | 8 | 1 | COMMERCIAL | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 78W Tc | 24A | 150A | 0.0026Ohm | 288 mJ | N-Channel | 3.94pF @ 15V | 2.6m Ω @ 24A, 10V | 3V @ 250μA | 24A Ta 42A Tc | 63nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BFL4001-1EX | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TA | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bfg540wxr135-datasheets-1229.pdf | TO-220-3 Full Pack | TO-220-3 Fullpack/TO-220F-3SG | 900V | 2W Ta 37W Tc | N-Channel | 850pF @ 30V | 2.7Ohm @ 3.25A, 10V | 6.5A Ta | 44nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB80N06S2-08 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spb80n06s208-datasheets-7571.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 55V | 215W Tc | N-Channel | 3.8pF @ 25V | 8mOhm @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDD60N745U1-35G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds335n-datasheets-5156.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 600V | 84W Tc | N-Channel | 440pF @ 50V | 745mOhm @ 3.25A, 10V | 4V @ 250μA | 6.6A Tc | 15nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU3580 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdu3580-datasheets-7586.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 3.8W Ta 42W Tc | 7.7A | 50A | 0.029Ohm | 245 mJ | N-Channel | 1.76pF @ 40V | 29m Ω @ 7.7A, 10V | 4V @ 250μA | 7.7A Ta | 79nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPN60R600P7SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn60r600p7satma1-datasheets-7560.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 7W Tc | 0.6Ohm | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NDS8435A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds8435a-datasheets-7613.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 2.5W Ta | P-Channel | 1.8pF @ 15V | 23mOhm @ 7.9A, 10V | 3V @ 250μA | 7.9A Ta | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP322PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsp322ph6327xtsa1-datasheets-7538.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.5mm | Lead Free | 4 | 10 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.8W | 1 | 4.6 ns | 4.3ns | 8.3 ns | 21.2 ns | 1A | 20V | -100V | SILICON | DRAIN | 100V | 1.8W Ta | 1A | 0.8Ohm | P-Channel | 372pF @ 25V | 800m Ω @ 1A, 10V | 1V @ 380μA | 1A Tc | 16.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| 2SK3984-ZK-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3993zke1az-datasheets-2884.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3ZK) | 100V | 1W Ta 20W Tc | N-Channel | 750pF @ 10V | 85mOhm @ 9A, 10V | 18A Tc | 13nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI10N60CTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi10n60ctu-datasheets-7622.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 3.13W Ta 156W Tc | 9.5A | 38A | 0.73Ohm | 700 mJ | N-Channel | 2.04pF @ 25V | 730m Ω @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 57nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| NP32N055SHE-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np32n055shee1ay-datasheets-7527.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3ZK) | 55V | 1.2W Ta 66W Tc | N-Channel | 1.6pF @ 25V | 25mOhm @ 16A, 10V | 4V @ 250μA | 32A Tc | 32nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU8586 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw2510nz-datasheets-2429.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 20V | 20V | 77W Tc | 35A | 354A | 0.0055Ohm | 144 mJ | N-Channel | 2.48pF @ 10V | 5.5m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPN80R3K3P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn80r3k3p7atma1-datasheets-7420.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 6.1W Tc | N-Channel | 120pF @ 500V | 3.3 Ω @ 590mA, 10V | 3.5V @ 30μA | 1.9A Tc | 5.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD220N06L3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd220n06l3gbtma1-datasheets-7340.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | YES | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 36W | 1 | Not Qualified | R-PSSO-G2 | 9 ns | 3ns | 19 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 36W Tc | TO-252AA | 120A | 0.022Ohm | 60V | N-Channel | 1600pF @ 30V | 22m Ω @ 30A, 10V | 2.2V @ 11μA | 30A Tc | 10nC @ 4.5V | 4.5V 10V | ±20V |
