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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLZ34NSPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irlz34nspbf-datasheets-6549.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 3.8W Ta 68W Tc | N-Channel | 880pF @ 25V | 35mOhm @ 16A, 10V | 2V @ 250μA | 30A Tc | 25nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDD60N900U1-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds336p-datasheets-1879.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 600V | 74W Tc | N-Channel | 360pF @ 50V | 900mOhm @ 2.5A, 10V | 4V @ 250μA | 5.7A Tc | 12nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFW9Z34TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sfw9z34tm-datasheets-6451.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 3.8W Ta 82W Tc | P-Channel | 1.155pF @ 25V | 140mOhm @ 9A, 10V | 4V @ 250μA | 18A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS540A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-irfs540a-datasheets-6462.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 39W Tc | 17A | 110A | 0.052Ohm | 385 mJ | N-Channel | 1.71pF @ 25V | 52m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 78nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2521T1H-T1-AT | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-SMD, Flat Lead | 8-VSOF | 30V | 1W Ta | N-Channel | 780pF @ 15V | 16.5mOhm @ 8A, 10V | 2.5V @ 1mA | 8A Ta | 7.6nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120ATF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irlr120atf-datasheets-6465.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.5W Ta 35W Tc | 8.4A | 29A | 0.22Ohm | 94 mJ | N-Channel | 440pF @ 25V | 220m Ω @ 4.2A, 5V | 2V @ 250μA | 8.4A Tc | 15nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP16CN10LGXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp80n04s2h4aksa2-datasheets-8354.pdf | TO-220-3 | PG-TO220-3 | 100V | 100W Tc | N-Channel | 4.19pF @ 50V | 15.7mOhm @ 54A, 10V | 2.4V @ 61μA | 54A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD07N60S5 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spd07n60s5-datasheets-6469.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 600V | 83W Tc | N-Channel | 970pF @ 25V | 600mOhm @ 4.6A, 10V | 5.5V @ 350μA | 7.3A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF4N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqpf6n70-datasheets-8036.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 36W Tc | 2.6A | 10.4A | 260 mJ | N-Channel | 670pF @ 25V | 2.2 Ω @ 1.3A, 10V | 5V @ 250μA | 2.6A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQU8N25TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu8n25tu-datasheets-6472.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 2.5W Ta 50W Tc | 6.2A | 24.8A | 0.55Ohm | 120 mJ | N-Channel | 530pF @ 25V | 550m Ω @ 3.1A, 10V | 5V @ 250μA | 6.2A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPD04N60S5 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-spd04n60s5-datasheets-6474.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | AVALANCHE RATED, HIGH VOLTAGE | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 50W Tc | TO-252AA | 4.5A | 9A | 0.95Ohm | 130 mJ | N-Channel | 580pF @ 25V | 950m Ω @ 2.8A, 10V | 5.5V @ 200μA | 4.5A Tc | 22.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 2SK4197FS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4197fs-datasheets-6476.pdf | TO-220-3 | TO-220-3 | 600V | 2W Ta 28W Tc | N-Channel | 260pF @ 30V | 3.25Ohm @ 1.8A, 10V | 3.3A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDD60N900U1-35G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds336p-datasheets-1879.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 600V | 74W Tc | N-Channel | 360pF @ 50V | 900mOhm @ 2.5A, 10V | 4V @ 250μA | 5.7A Tc | 12nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75329D3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75344p3-datasheets-4775.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 128W Tc | 20A | 0.026Ohm | N-Channel | 1.06pF @ 25V | 26m Ω @ 20A, 10V | 4V @ 250μA | 20A Tc | 65nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6675A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7066asn3-datasheets-9062.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 11A | 0.013Ohm | P-Channel | 2.33pF @ 15V | 13m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta | 34nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSP92PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-bsp92ph6327xtsa1-datasheets-6405.pdf | TO-261-4, TO-261AA | 6.5mm | 1.5mm | 3.5mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.8W | 1 | 5 ns | 6ns | 33 ns | 67 ns | 260mA | 20V | -250V | SILICON | DRAIN | 250V | -1.5V | 1.8W Ta | 0.26A | -250V | P-Channel | 104pF @ 25V | 12 Ω @ 260mA, 10V | 2V @ 130μA | 260mA Ta | 5.4nC @ 10V | 2.8V 10V | ±20V | ||||||||||||||||||||||||||||||||
| RJK0348DSP-00#J0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk0348dsp00j0-datasheets-6488.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOP | 30V | 2.5W Ta | N-Channel | 5.1pF @ 10V | 3.4mOhm @ 11A, 10V | 22A Ta | 34nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF7N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds4070n7-datasheets-3458.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 39W Tc | TO-220AB | 7A | 28A | 0.9Ohm | 270 mJ | N-Channel | 940pF @ 25V | 900m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 16.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| NDD60N900U1T4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds336p-datasheets-1879.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 600V | 74W Tc | N-Channel | 360pF @ 50V | 900mOhm @ 2.5A, 10V | 4V @ 250μA | 5.7A Tc | 12nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI70N10S3L12AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi70n10s3l12aksa1-datasheets-6336.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 100V | 125W Tc | N-Channel | 5.55pF @ 25V | 12.1mOhm @ 70A, 10V | 2.4V @ 83μA | 70A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMDF3N02HDR2G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mmbz5243blt1-datasheets-4639.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 20V | 2W Ta | N-Channel | 630pF @ 16V | 90mOhm @ 3A, 10V | 2V @ 250μA | 3.8A Ta | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPI21N10 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spi21n10-datasheets-6343.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 90W Tc | 21A | 84A | 0.08Ohm | 130 mJ | N-Channel | 865pF @ 25V | 80m Ω @ 15A, 10V | 4V @ 44μA | 21A Tc | 38.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQB3N60CTM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb8n60cftm-datasheets-9338.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 75W Tc | 3A | 12A | 150 mJ | N-Channel | 565pF @ 25V | 3.4 Ω @ 1.5A, 10V | 4V @ 250μA | 3A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPD50N03S2L-06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spw11n60c3fksa1-datasheets-3637.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 136W Tc | 50A | 200A | 0.0092Ohm | 250 mJ | N-Channel | 2.53pF @ 25V | 6.4m Ω @ 50A, 10V | 2V @ 85μA | 50A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFH3702TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfh3702trpbf-datasheets-6347.pdf | 8-PowerVDFN | 2.9972mm | 939.8μm | 2.9972mm | 3 | 12 Weeks | No SVHC | 8 | EAR99 | No | DUAL | 2.8W | 1 | S-PDSO-N3 | 9.6 ns | 15ns | 5.8 ns | 11 ns | 16A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.8W Ta | 120A | 0.0071Ohm | 77 mJ | 30V | N-Channel | 1510pF @ 15V | 1.8 V | 7.1m Ω @ 16A, 10V | 2.35V @ 25μA | 16A Ta 42A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDS4488 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds4488-datasheets-6359.pdf | 30V | 7.9A | SOIC | Lead Free | 8 | 8 | EAR99 | No | e3 | Tin (Sn) | 1W | DUAL | GULL WING | 2.5W | 1 | FET General Purpose Power | 927pF | 7.4 ns | 7.5ns | 5 ns | 25 ns | 7.9A | 25V | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 0.0079A | 22mOhm | 30V | 22 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| MMDF3N02HDR2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-mmdf3n02hdr2-datasheets-6371.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | no | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | TIN LEAD | YES | DUAL | GULL WING | 240 | 8 | 30 | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta | 3.8A | 19A | 0.09Ohm | 405 mJ | N-Channel | 630pF @ 16V | 90m Ω @ 3A, 10V | 2V @ 250μA | 3.8A Ta | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFD113 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf7834trpbf-datasheets-5020.pdf | 4-DIP (0.300, 7.62mm) | 3 | no | unknown | e0 | TIN LEAD | NO | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PDIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 80V | 1W Tc | 0.8A | 0.8Ohm | N-Channel | 200pF @ 25V | 800m Ω @ 800mA, 10V | 4V @ 250μA | 800mA Tc | 7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS225H6327FTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bss225h6327ftsa1-datasheets-6384.pdf | 600V | 90mA | TO-243AA | 4.5mm | 1.5mm | 2.5mm | Contains Lead | 3 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | FLAT | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1W | 1 | 14 ns | 38ns | 41 ns | 62 ns | 90mA | 20V | 600V | SILICON | DRAIN | 1W Ta | 0.09A | 4.4 pF | 600V | N-Channel | 131pF @ 25V | 45 Ω @ 90mA, 10V | 2.3V @ 94μA | 90mA Ta | 5.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPD60R2K1CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r2k1ceauma1-datasheets-6330.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 2.3A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 38W Tc | 6A | 11 mJ | N-Channel | 140pF @ 100V | 2.1 Ω @ 760mA, 10V | 3.5V @ 60μA | 2.3A Tc | 6.7nC @ 10V | 10V | ±20V |
