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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQPF6N60C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqt4n20tf-datasheets-4269.pdf | TO-220-3 Full Pack | 3 | yes | FAST SWITCHING | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 40W Tc | TO-220AB | 5.5A | 22A | 2Ohm | 300 mJ | N-Channel | 810pF @ 25V | 2 Ω @ 2.75A, 10V | 4V @ 250μA | 5.5A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FQI6N50TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp16n15-datasheets-6172.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 3.13W Ta 130W Tc | 5.5A | 22A | 340 mJ | N-Channel | 790pF @ 25V | 1.3 Ω @ 2.8A, 10V | 5V @ 250μA | 5.5A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDU8580 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw2508p-datasheets-2317.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 20V | 49.5W Tc | N-Channel | 1.445pF @ 10V | 9mOhm @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI70N10S3L12AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi70n10s3l12aksa1-datasheets-6336.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 100V | 125W Tc | N-Channel | 5.55pF @ 25V | 12.1mOhm @ 70A, 10V | 2.4V @ 83μA | 70A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMDF3N02HDR2G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mmbz5243blt1-datasheets-4639.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 20V | 2W Ta | N-Channel | 630pF @ 16V | 90mOhm @ 3A, 10V | 2V @ 250μA | 3.8A Ta | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW56NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw56nm60n-datasheets-6276.pdf | TO-247-3 | 3 | No | STW56N | 3 | Single | 300W | 1 | FET General Purpose Powers | R-PSFM-T3 | 45A | 25V | SILICON | SWITCHING | 300W Tc | 0.06Ohm | 600V | N-Channel | 4800pF @ 50V | 60m Ω @ 22.5A, 10V | 4V @ 250μA | 45A Tc | 150nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC120N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc120n03lsgatma1-datasheets-6278.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 28W | 1 | R-PDSO-F5 | 2.7 ns | 2.2ns | 2.2 ns | 12 ns | 12A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 28W Tc | N-Channel | 1200pF @ 15V | 12m Ω @ 30A, 10V | 2.2V @ 250μA | 12A Ta 39A Tc | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDMB506P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdms7606-datasheets-2816.pdf | 8-PowerWDFN | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | NO LEAD | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.9W Ta | 6.8A | 70A | 30Ohm | P-Channel | 2.96pF @ 10V | 30m Ω @ 6.8A, 4.5V | 1.5V @ 250μA | 6.8A Ta | 30nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| FDS3612 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6299s-datasheets-4249.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.5W Ta | 3.4A | 0.12Ohm | N-Channel | 632pF @ 50V | 120m Ω @ 3.4A, 10V | 4V @ 250μA | 3.4A Ta | 20nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQI5N50CTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp11n50cf-datasheets-4061.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 73W Tc | 5A | 20A | 300 mJ | N-Channel | 625pF @ 25V | 1.4 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R450E6ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd60r450e6atma1-datasheets-6293.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 600V | 74W Tc | N-Channel | 620pF @ 100V | 450mOhm @ 3.4A, 10V | 3.5V @ 280μA | 9.2A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT26N100XHV | IXYS | $19.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n100x-datasheets-5605.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 1000V | 860mW Ta | N-Channel | 3290pF @ 25V | 320m Ω @ 500mA, 10V | 1V @ 4mA | 26A Ta | 113nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7421D1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7421d1trpbf-datasheets-6298.pdf | 30V | 5.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 35MOhm | 8 | No | 2W | 1 | 8-SO | 510pF | 6.7 ns | 27ns | 16 ns | 20 ns | 5.8A | 20V | 30V | 2W Ta | 60mOhm | 30V | N-Channel | 510pF @ 25V | 35mOhm @ 4.1A, 10V | 1V @ 250μA | 5.8A Ta | 27nC @ 10V | Schottky Diode (Isolated) | 35 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SFP9540 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sfp9540-datasheets-6304.pdf | TO-220-3 | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 132W Tc | TO-220AB | 17A | 68A | 0.2Ohm | 578 mJ | P-Channel | 1.535pF @ 25V | 200m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQD630TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd630tf-datasheets-4295.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 2.5W Ta 46W Tc | 7A | 28A | 0.4Ohm | 163 mJ | N-Channel | 550pF @ 25V | 400m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 25nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| IPN60R1K0CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipn60r1k0ceatma1-datasheets-6323.pdf | SOT-223-3 | 1.8mm | 18 Weeks | No SVHC | 3 | 1 | 5W | 150°C | PG-SOT223 | 10 ns | 60 ns | 6.8A | 20V | 600V | 3V | 5W Tc | 900mOhm | 600V | N-Channel | 280pF @ 100V | 1Ohm @ 1.5A, 10V | 3.5V @ 130μA | 6.8A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX210P10T | IXYS | $25.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtx210p10t-datasheets-6326.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1040W Tc | 800A | 0.0075Ohm | 3000 mJ | P-Channel | 69500pF @ 25V | 7.5m Ω @ 105A, 10V | 4.5V @ 250μA | 210A Tc | 740nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||
| NDPL070N10BG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-220-3 | TO-220-3 | 100V | 2.1W Ta 72W Tc | N-Channel | 2.01pF @ 50V | 10.8mOhm @ 35A, 15V | 4V @ 1mA | 70A Ta | 26nC @ 10V | 10V 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU068AN03L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdu8878-datasheets-4306.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 80W Tc | 35A | 0.0068Ohm | 168 mJ | N-Channel | 2.525pF @ 15V | 5.7m Ω @ 35A, 10V | 2.5V @ 250μA | 17A Ta 35A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDMC6296 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdmc6296-datasheets-6266.pdf | 8-PowerWDFN | 5 | yes | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | NO LEAD | 260 | 8 | 30 | 1 | COMMERCIAL | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 900mW Ta 2.1W Tc | 11.5A | 0.0105Ohm | 225 pF | N-Channel | 2.141pF @ 15V | 10.5m Ω @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta | 19nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQB4N20TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb4n20tm-datasheets-6274.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.13W Ta 45W Tc | 3.6A | 14.4A | 52 mJ | N-Channel | 220pF @ 25V | 1.4 Ω @ 1.8A, 10V | 5V @ 250μA | 3.6A Tc | 6.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FQP32N12V2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqp32n12v2-datasheets-6204.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 120V | 120V | 150W Tc | TO-220AB | 32A | 128A | 0.05Ohm | 439 mJ | N-Channel | 1.86pF @ 25V | 50m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FQB8N25TM | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqd2n60tf-datasheets-5195.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 3.13W Ta 87W Tc | 8A | 32A | 0.55Ohm | 120 mJ | N-Channel | 530pF @ 25V | 550m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| NDS8410A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds8410a-datasheets-6208.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 10.8A | 0.012Ohm | N-Channel | 1.62pF @ 15V | 12m Ω @ 10.8A, 10V | 3V @ 250μA | 10.8A Ta | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N40C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf6n40c-datasheets-6213.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400V | 400V | 38W Tc | TO-220AB | 6A | 24A | 1Ohm | 270 mJ | N-Channel | 625pF @ 25V | 1 Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| HUFA76429D3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75645p3-datasheets-9183.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 60V | 110W Tc | N-Channel | 1.48pF @ 25V | 23mOhm @ 20A, 10V | 3V @ 250μA | 20A Tc | 46nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R600C6XKSA1 | Rochester Electronics, LLC | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ips075n03lgakma1-datasheets-5326.pdf | TO-220-3 Full Pack | PG-TO220 Full Pack | 650V | 28W Tc | N-Channel | 440pF @ 100V | 600mOhm @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD068AN03L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6030bl-datasheets-6290.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 80W Tc | 17A | 0.0068Ohm | 168 mJ | N-Channel | 2.525pF @ 15V | 5.7m Ω @ 35A, 10V | 2.5V @ 250μA | 17A Ta 35A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPN60R1K5CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipn60r1k5ceatma1-datasheets-6221.pdf | SOT-223-3 | Lead Free | 18 Weeks | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 5A | 600V | 3V | 5W Tc | N-Channel | 200pF @ 100V | 1.5 Ω @ 1.1A, 10V | 3.5V @ 90μA | 5A Tc | 9.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF13N10 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf30n06-datasheets-5279.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 30W Tc | 8.7A | 34.8A | 0.18Ohm | 95 mJ | N-Channel | 450pF @ 25V | 180m Ω @ 4.35A, 10V | 4V @ 250μA | 8.7A Tc | 16nC @ 10V | 10V | ±25V |
