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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQP3N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp3n60-datasheets-6198.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 75W Tc | TO-220AB | 3A | 12A | 200 mJ | N-Channel | 450pF @ 25V | 3.6 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| SPB04N50C3ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spb04n50c3atma1-datasheets-6200.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 560V | 50W Tc | N-Channel | 470pF @ 25V | 950mOhm @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4898NFT3G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntmd3p03r2-datasheets-5361.pdf | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 30V | 930mW Ta 73.5W Tc | N-Channel | 3.233pF @ 12V | 3mOhm @ 30A, 10V | 2.5V @ 1mA | 13.2A Ta 117A Tc | 49.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP32N12V2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqp32n12v2-datasheets-6204.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 120V | 120V | 150W Tc | TO-220AB | 32A | 128A | 0.05Ohm | 439 mJ | N-Channel | 1.86pF @ 25V | 50m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| FQB8N25TM | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqd2n60tf-datasheets-5195.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 3.13W Ta 87W Tc | 8A | 32A | 0.55Ohm | 120 mJ | N-Channel | 530pF @ 25V | 550m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| NDS8410A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds8410a-datasheets-6208.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 10.8A | 0.012Ohm | N-Channel | 1.62pF @ 15V | 12m Ω @ 10.8A, 10V | 3V @ 250μA | 10.8A Ta | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FQPF6N40C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf6n40c-datasheets-6213.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400V | 400V | 38W Tc | TO-220AB | 6A | 24A | 1Ohm | 270 mJ | N-Channel | 625pF @ 25V | 1 Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| HUFA76429D3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75645p3-datasheets-9183.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 60V | 110W Tc | N-Channel | 1.48pF @ 25V | 23mOhm @ 20A, 10V | 3V @ 250μA | 20A Tc | 46nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R600C6XKSA1 | Rochester Electronics, LLC | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ips075n03lgakma1-datasheets-5326.pdf | TO-220-3 Full Pack | PG-TO220 Full Pack | 650V | 28W Tc | N-Channel | 440pF @ 100V | 600mOhm @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4108NT3G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntljs3a18pztxg-datasheets-4588.pdf | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 30V | 1.1W Ta 96.2W Tc | N-Channel | 6pF @ 15V | 2.2mOhm @ 21A, 10V | 2.5V @ 250μA | 13.5A Ta | 54nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDF06N60ZG-001 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndd01n601g-datasheets-5484.pdf | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf6n50-datasheets-6149.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 42W Tc | 3.6A | 14.4A | 340 mJ | N-Channel | 790pF @ 25V | 1.3 Ω @ 1.8A, 10V | 5V @ 250μA | 3.6A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| SPS04N60C3BKMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sps04n60c3bkma1-datasheets-6188.pdf | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 650V | 50W Tc | N-Channel | 490pF @ 25V | 950mOhm @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU7030BL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdg6302p-datasheets-3045.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.8W Ta 60W Tc | 14A | 100A | 0.0095Ohm | 174 mJ | N-Channel | 1.425pF @ 15V | 9.5m Ω @ 14A, 10V | 3V @ 250μA | 14A Ta 56A Tc | 20nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| FDU6680 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds8874-datasheets-5461.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.3W Ta 56W Tc | 12A | 100A | 0.01Ohm | 180 mJ | N-Channel | 1.23pF @ 15V | 10m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 46A Tc | 18nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| FQP3N90 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqp7n80-datasheets-4436.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 130W Tc | TO-220AB | 3.6A | 14.4A | 450 mJ | N-Channel | 910pF @ 25V | 4.25 Ω @ 1.8A, 10V | 5V @ 250μA | 3.6A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDU6030BL | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdu6030bl-datasheets-6155.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.8W Ta 50W Tc | 42A | 100A | 0.016Ohm | 130 mJ | N-Channel | 1.143pF @ 15V | 16m Ω @ 10A, 10V | 3V @ 250μA | 10A Ta 42A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| RCJ050N25TL | ROHM Semiconductor | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 10 Weeks | 83 | EAR99 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 1.56W Ta 30W Tc | 5A | 20A | 1.82 mJ | N-Channel | 350pF @ 25V | 1.36 Ω @ 2.5A, 10V | 5.5V @ 1mA | 5A Tc | 8.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| RJK0364DPA-00#J0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-PowerWDFN | 8-WPAK | 30V | 35W Tc | N-Channel | 1.6pF @ 10V | 7.8mOhm @ 17.5A, 10V | 35A Ta | 10nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N40CF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf6n40cf-datasheets-6169.pdf | TO-220-3 Full Pack | TO-220F | 400V | 38W Tc | N-Channel | 625pF @ 25V | 1Ohm @ 3A, 10V | 4V @ 250μA | 6A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP16N15 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqp5n20l-datasheets-5654.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 108W Tc | TO-220AB | 16.4A | 65.6A | 0.16Ohm | 230 mJ | N-Channel | 910pF @ 25V | 160m Ω @ 8.2A, 10V | 4V @ 250μA | 16.4A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| NTMFS4108NT1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntmfs5834nlt1g-datasheets-4350.pdf | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 30V | 1.1W Ta 96.2W Tc | N-Channel | 6pF @ 15V | 2.2mOhm @ 21A, 10V | 2.5V @ 250μA | 13.5A Ta | 54nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R380E6BTMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~155°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi50r199cpxksa1-datasheets-0017.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 600V | 83W Tc | N-Channel | 700pF @ 100V | 380mOhm @ 3.8A, 10V | 3.5V @ 300μA | 10.6A Tc | 32nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-irfr1205pbf-datasheets-5606.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 43W Tc | TO-220AB | 3A | 12A | 190 mJ | P-Channel | 200pF @ 25V | 1.2 Ω @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| FQP7P20 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf19n10l-datasheets-5584.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 90W Tc | TO-220AB | 7.3A | 29.2A | 0.69Ohm | 570 mJ | P-Channel | 770pF @ 25V | 690m Ω @ 3.65A, 10V | 5V @ 250μA | 7.3A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IPP65R600C6XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp65r600c6xksa1-datasheets-6182.pdf | TO-220-3 | PG-TO220-3 | 650V | 63W Tc | N-Channel | 440pF @ 100V | 600mOhm @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75333S3 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-huf75623s3st-datasheets-5201.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 150W Tc | 56A | 0.016Ohm | N-Channel | 1.3pF @ 25V | 16m Ω @ 66A, 10V | 4V @ 250μA | 66A Tc | 85nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFX140N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfx140n30p-datasheets-6039.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.04kW | 1 | FET General Purpose Power | 30ns | 20 ns | 100 ns | 140A | 20V | SILICON | DRAIN | SWITCHING | 1040W Tc | 0.024Ohm | 5000 mJ | 300V | N-Channel | 14800pF @ 25V | 24m Ω @ 70A, 10V | 5V @ 8mA | 140A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IRFD213 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfd213-datasheets-6145.pdf | 4-DIP (0.300, 7.62mm) | 3 | no | unknown | e0 | TIN LEAD | NO | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PDIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 150V | 0.45A | 2.4Ohm | N-Channel | 140pF @ 25V | 2 Ω @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | ||||||||||||||||||||||||||||||||||||||
| DMG7408SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg7408sfg7-datasheets-5995.pdf | 8-PowerVDFN | 3.35mm | 850μm | 3.35mm | 5 | 6 Weeks | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 260 | 1 | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 2.9 ns | 7.9ns | 3.1 ns | 14.6 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1W Ta | 6A | 0.023Ohm | 30V | N-Channel | 478.9pF @ 15V | 23m Ω @ 10A, 10V | 2.4V @ 250μA | 7A Ta | 17nC @ 10V | 4.5V 10V | ±20V |
