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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| HUFA76439P3 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-hufa76439p3-datasheets-6116.pdf | TO-220-3 | 3 | yes | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 155W Tc | TO-220AB | 75A | 0.014Ohm | N-Channel | 2.745pF @ 25V | 12m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 84nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC796N | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd6672a-datasheets-8001.pdf | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | 6 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | 260 | 6 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-F6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 12.5A | 40A | 0.009Ohm | N-Channel | 1.444pF @ 15V | 9m Ω @ 12.5A, 10V | 3V @ 250μA | 12.5A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA1816GR-9JG-E1-A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa2791gre1at-datasheets-2832.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 12V | P-Channel | 1.57pF @ 10V | 15mOhm @ 4.5A, 4.5V | 1.5V @ 1mA | 9A Ta | 15nC @ 4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4C55NTAG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nttfs4c53ntag-datasheets-4594.pdf | 8-PowerWDFN | 8-WDFN (3.3x3.3) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK16J60W,S1VE | Toshiba Semiconductor and Storage | $4.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB02N60C3ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spb02n60c3atma1-datasheets-6136.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 650V | 25W Tc | N-Channel | 200pF @ 25V | 3Ohm @ 1.1A, 10V | 3.9V @ 80μA | 1.8A Tc | 12.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN50R950CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipn50r950ceatma1-datasheets-6123.pdf | TO-261-3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 6.6A | 500V | 3V | 5W Tc | N-Channel | 231pF @ 100V | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 6.6A Tc | 10.5nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF5N60CYDTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf5n60cydtu-datasheets-6141.pdf | TO-220-3 Full Pack, Formed Leads | TO-220F-3 (Y-Forming) | 600V | 33W Tc | N-Channel | 670pF @ 25V | 2.5Ohm @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV37ENEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmv37enear-datasheets-6037.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | AEC-Q101; IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 710mW Ta 8.3W Tc | TO-236AB | 3.5A | 0.049Ohm | N-Channel | 450pF @ 30V | 49m Ω @ 3.5A, 10V | 2.7V @ 250μA | 3.5A Ta | 13nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDM606P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdms3616s-datasheets-2525.pdf | 8-SMD, Flat Lead Exposed Pad | 8-MLP, MicroFET (3x2) | 20V | 1.92W Ta | P-Channel | 2.2pF @ 10V | 30mOhm @ 6.8A, 4.5V | 1.5V @ 250μA | 6.8A Tc | 30nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX140N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfx140n30p-datasheets-6039.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.04kW | 1 | FET General Purpose Power | 30ns | 20 ns | 100 ns | 140A | 20V | SILICON | DRAIN | SWITCHING | 1040W Tc | 0.024Ohm | 5000 mJ | 300V | N-Channel | 14800pF @ 25V | 24m Ω @ 70A, 10V | 5V @ 8mA | 140A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFD213 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfd213-datasheets-6145.pdf | 4-DIP (0.300, 7.62mm) | 3 | no | unknown | e0 | TIN LEAD | NO | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PDIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 150V | 0.45A | 2.4Ohm | N-Channel | 140pF @ 25V | 2 Ω @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG7408SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg7408sfg7-datasheets-5995.pdf | 8-PowerVDFN | 3.35mm | 850μm | 3.35mm | 5 | 6 Weeks | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 260 | 1 | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 2.9 ns | 7.9ns | 3.1 ns | 14.6 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1W Ta | 6A | 0.023Ohm | 30V | N-Channel | 478.9pF @ 15V | 23m Ω @ 10A, 10V | 2.4V @ 250μA | 7A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQU2N80TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu2n80tu-datasheets-6147.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 2.5W Ta 50W Tc | 1.8A | 7.2A | 180 mJ | N-Channel | 550pF @ 25V | 6.3 Ω @ 900mA, 10V | 5V @ 250μA | 1.8A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K116TU,LF | Toshiba Semiconductor and Storage | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 12 Weeks | UFM | 245pF | 2.2A | 30V | 500mW Ta | N-Channel | 245pF @ 10V | 100mOhm @ 500mA, 4.5V | 1.1V @ 100μA | 2.2A Ta | 100 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2028UVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn2028uvt7-datasheets-6099.pdf | SOT-23-6 Thin, TSOT-23-6 | 15 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 260 | 30 | 6.2A | 20V | 1.2W Ta | N-Channel | 856pF @ 10V | 24m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 6.2A Ta | 8.3nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN6140LQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn6140lq7-datasheets-5910.pdf | TO-236-3, SC-59, SOT-23-3 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1.6A | 60V | 700mW Ta | N-Channel | 315pF @ 40V | 140m Ω @ 1.8A, 10V | 3V @ 250μA | 1.6A Ta | 8.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX7002BKSX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-nx7002bksx-datasheets-5883.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | 6 | LOGIC LEVEL COMPATIBLE | Tin | DUAL | GULL WING | 6 | 2 | 4.7 ns | 4.3ns | 2.9 ns | 6.9 ns | 270mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 310mW Ta 1.67W Tc | 0.24A | 3.2Ohm | N-Channel | 23.6pF @ 10V | 2.8 Ω @ 200mA, 10V | 2.1V @ 250μA | 270mA Ta | 1nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD412ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-siud412edt1ge3-datasheets-5952.pdf | PowerPAK® 0806 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | 1.25W Ta | 0.34Ohm | N-Channel | 21pF @ 6V | 340m Ω @ 500mA, 4.5V | 900mV @ 250μA | 500mA Tc | 0.71nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CEDM7001VL TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cedm7001vltrpbfree-datasheets-5954.pdf | SC-101, SOT-883 | 6 Weeks | 20V | 100mW Ta | N-Channel | 9pF @ 3V | 3 Ω @ 10mA, 4V | 900mV @ 250μA | 100mA Ta | 0.57nC @ 4.5V | 1.5V 4V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3478-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-mch3478tlw-datasheets-5971.pdf | 3-SMD, Flat Lead | Lead Free | 14 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e6 | 4.4 ns | 8.7ns | 12 ns | 16 ns | 2A | 12V | 30V | 800mW Ta | N-Channel | 130pF @ 10V | 165m Ω @ 1A, 4.5V | 2A Ta | 1.7nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RU1C002UNTCL | ROHM Semiconductor | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-ru1c002untcl-datasheets-5939.pdf | SC-85 | Lead Free | 3 | 16 Weeks | 85 | EAR99 | No | DUAL | FLAT | 3 | 1 | 1 | R-PDSO-F3 | 5 ns | 10ns | 10 ns | 15 ns | 200mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 150mW Ta | 0.2A | N-Channel | 25pF @ 10V | 1.2 Ω @ 200mA, 2.5V | 1V @ 1mA | 200mA Ta | 1.2V 2.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMN60H080DS-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn60h080ds7-datasheets-5873.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 3 | 21 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 1 | 30 | 700mW | 1 | 150°C | R-PDSO-G3 | 7 ns | 21 ns | 70mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.1W Ta | 0.07A | 290Ohm | 600V | N-Channel | 25pF @ 25V | 100 Ω @ 60mA, 10V | 3V @ 250μA | 80mA Ta | 1.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2012SN-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp2012sn7-datasheets-5845.pdf | SC | 3.1mm | 1.3mm | 1.7mm | 3 | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 500mW | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 500mW | 1 | Other Transistors | Not Qualified | 180pF | 5 ns | 20ns | 20 ns | 55 ns | -700mA | 12V | -20V | SWITCHING | P-CHANNEL | -20V | METAL-OXIDE SEMICONDUCTOR | -1.2V | 0.7A | 300mOhm | -1.2 V | 300 mΩ | |||||||||||||||||||||||||||||||||||||||||
| STE48NM50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Chassis Mount, Screw, Surface Mount | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-ste48nm50-datasheets-6005.pdf | 550V | 48A | ISOTOP | 38.2mm | 12.2mm | 25.5mm | Lead Free | 4 | 12 Weeks | No SVHC | 100mOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | UPPER | UNSPECIFIED | STE48 | 4 | 450W | 1 | FET General Purpose Power | 40 ns | 35ns | 23 ns | 18 ns | 48A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 450W Tc | 500V | N-Channel | 3700pF @ 25V | 100m Ω @ 24A, 10V | 5V @ 250μA | 48A Tc | 117nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| PMN48XP,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmn48xp115-datasheets-6008.pdf | SC-74, SOT-457 | Lead Free | 6 | 4 Weeks | 55MOhm | 6 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 6 | 530mW | 1 | 15 ns | 22ns | 22 ns | 51 ns | 4.1A | 12V | -20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 530mW Ta 6.25W Tc | -20V | P-Channel | 1000pF @ 10V | 55m Ω @ 2.4A, 4.5V | 1.25V @ 250μA | 4.1A Ta | 13nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RSF015N06FRATL | ROHM Semiconductor | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | 3-SMD, Flat Lead | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 800mW Ta | N-Channel | 110pF @ 10V | 290m Ω @ 1.5A, 10V | 2.5V @ 1mA | 1.5A Ta | 2nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2305B-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-si2305btp-datasheets-6028.pdf | TO-236-3, SC-59, SOT-23-3 | 22 Weeks | 260 | 10 | 20V | 1.4W | P-Channel | 740pF @ 4V | 60m Ω @ 2.7A, 4.5V | 900mV @ 250μA | 4.2A | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5499DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5499dct1ge3-datasheets-5811.pdf | 8-SMD, Flat Lead | 8 | Single | 2.5W | 1206-8 ChipFET™ | 1.29nF | -6A | 5V | 8V | 2.5W Ta 6.2W Tc | 36mOhm | 8V | P-Channel | 1290pF @ 4V | 36mOhm @ 5.1A, 4.5V | 800mV @ 250μA | 6A Tc | 35nC @ 8V | 36 mΩ | 1.5V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6030ENZ4C13 | ROHM Semiconductor | $20.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6030enz4c13-datasheets-5902.pdf | TO-247-3 | 3 | 8 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 305W Tc | 30A | 80A | 0.13Ohm | 636 mJ | N-Channel | 2100pF @ 25V | 130m Ω @ 14.5A, 10V | 4V @ 1mA | 30A Tc | 85nC @ 10V | 10V | ±20V |
