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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI5499DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5499dct1ge3-datasheets-5811.pdf | 8-SMD, Flat Lead | 8 | Single | 2.5W | 1206-8 ChipFET™ | 1.29nF | -6A | 5V | 8V | 2.5W Ta 6.2W Tc | 36mOhm | 8V | P-Channel | 1290pF @ 4V | 36mOhm @ 5.1A, 4.5V | 800mV @ 250μA | 6A Tc | 35nC @ 8V | 36 mΩ | 1.5V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6030ENZ4C13 | ROHM Semiconductor | $20.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6030enz4c13-datasheets-5902.pdf | TO-247-3 | 3 | 8 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 305W Tc | 30A | 80A | 0.13Ohm | 636 mJ | N-Channel | 2100pF @ 25V | 130m Ω @ 14.5A, 10V | 4V @ 1mA | 30A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK040Z65Z,S1F | Toshiba Semiconductor and Storage | $10.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSVI | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-4 | 16 Weeks | 650V | 360W Tc | N-Channel | 6250pF @ 300V | 40m Ω @ 28.5A, 10V | 4V @ 2.85mA | 57A Ta | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN64N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn64n60p-datasheets-5769.pdf | 600V | 64A | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | No SVHC | 96MOhm | 4 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | Not Qualified | 23ns | 24 ns | 79 ns | 50A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 5V | 700W Tc | 3500 mJ | 600V | N-Channel | 12000pF @ 25V | 96m Ω @ 500mA, 10V | 5V @ 8mA | 50A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| 2SK2034TE85LF | Toshiba Semiconductor and Storage | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | SC-70, SOT-323 | unknown | FET General Purpose Powers | 100mA | 10V | Single | 100mW Ta | 0.1A | 20V | N-Channel | 8.5pF @ 3V | 12 Ω @ 10mA, 2.5V | 100mA Ta | 2.5V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN65D9L-7 | Diodes Incorporated | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | 13 Weeks | 60V | 270mW Ta | N-Channel | 41pF @ 4.5V | 4 Ω @ 500mA, 10V | 2.5V @ 250μA | 335mA Ta | 0.4pC @ 4.5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K72CTC,L3F | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | SOT-1123 | 12 Weeks | CST3C | 17pF | 150mA | 60V | 500mW Ta | N-Channel | 17pF @ 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250μA | 150mA Ta | 0.35nC @ 4.5V | 3.9 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K15AFS,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SC-75, SOT-416 | 16 Weeks | EAR99 | 100mW | 100mA | 20V | 100mW Ta | 30V | N-Channel | 13.5pF @ 3V | 3.6 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTR4003NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntr4003nt3g-datasheets-5886.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 10 Weeks | No SVHC | 1Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 690mW | 1 | FET General Purpose Power | 16.7 ns | 47.9ns | 47.9 ns | 65.1 ns | 500mA | 20V | SILICON | SWITCHING | 1.4V | 690mW Ta | 0.5A | 30V | N-Channel | 21pF @ 5V | 1.4 V | 1.5 Ω @ 10mA, 4V | 1.4V @ 250μA | 500mA Ta | 1.15nC @ 5V | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||
| BSM300C12P3E301 | ROHM Semiconductor | $817.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -40°C~150°C TJ | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-bsm300c12p3e301-datasheets-5795.pdf | Module | 19 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V | 1360W Tc | N-Channel | 1500pF @ 10V | 5.6V @ 80mA | 300A Tc | Standard | +22V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP150NF04 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp150nf04-datasheets-5797.pdf | TO-220-3 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP150 | 300W | 1 | FET General Purpose Power | 15 ns | 150ns | 45 ns | 70 ns | 80A | 20V | Single | 40V | 300W Tc | N-Channel | 3650pF @ 25V | 7m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| CSD25501F3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFLGA | 690μm | 600μm | 3 | 20 Weeks | 3 | ACTIVE (Last Updated: 6 days ago) | yes | 200μm | YES | BOTTOM | NO LEAD | NOT SPECIFIED | CSD25501 | Single | NOT SPECIFIED | 1 | SILICON | SWITCHING | 20V | 20V | 500mW Ta | 0.125Ohm | P-Channel | 385pF @ 10V | 76m Ω @ 400mA, 4.5V | 1.05V @ 250μA | 3.6A Ta | 1.33nC @ 4.5V | 1.8V 4.5V | -20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NX3008NBKMB,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-nx3008nbkmb315-datasheets-5759.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | No | e3 | Tin (Sn) | YES | BOTTOM | 3 | Single | 715mW | 1 | 15 ns | 11ns | 19 ns | 69 ns | 530mA | 8V | 30V | SILICON | DRAIN | SWITCHING | 360mW Ta 2.7W Tc | 30V | N-Channel | 50pF @ 15V | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 530mA Ta | 0.68nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| NX7002AKVL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-nx7002ak215-datasheets-2382.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | 3 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 3 | 30 | 1 | 6 ns | 7ns | 5 ns | 11 ns | 190mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 265mW Ta | 5.2Ohm | N-Channel | 20pF @ 10V | 4.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 190mA Ta | 0.43nC @ 4.5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFN74N100X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn74n100x-datasheets-5745.pdf | SOT-227-4, miniBLOC | 19 Weeks | 1000V | 1170W Tc | N-Channel | 17000pF @ 25V | 66m Ω @ 37A, 10V | 5.5V @ 8mA | 74A Tc | 425nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RU1L002SNTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/rohmsemiconductor-ru1l002sntl-datasheets-5857.pdf | SC-85 | 3 | 3 | EAR99 | No | DUAL | FLAT | 1 | 3.5 ns | 5ns | 28 ns | 18 ns | 250mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 200mW Ta | 0.25A | N-Channel | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 250mA Ta | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI8447DB-T2-E1 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8447dbt2e1-datasheets-5723.pdf | 6-UFBGA | 6 | 75mOhm | yes | EAR99 | e3 | PURE MATTE TIN | BOTTOM | BALL | 260 | 6 | 30 | 2.77W | 1 | Other Transistors | Not Qualified | R-PBGA-B6 | 10ns | 15 ns | 30 ns | 11A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 5.1A | 15A | -20V | P-Channel | 600pF @ 10V | 75m Ω @ 1A, 4.5V | 1.2V @ 250μA | 11A Tc | 25nC @ 10V | 1.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| BSM600C12P3G201 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 175°C TJ | Tray | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-bsm600c12p3g201-datasheets-5750.pdf | Module | 25 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V | 2460W Tc | N-Channel | 28000pF @ 10V | 5.6V @ 182mA | 600A Tc | +22V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB44N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfb44n100p-datasheets-5757.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 68ns | 56 ns | 90 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1250W Tc | 110A | 0.22Ohm | 2000 mJ | 1kV | N-Channel | 19000pF @ 25V | 220m Ω @ 22A, 10V | 6.5V @ 1mA | 44A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STF12N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf12n50m2-datasheets-5764.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF12 | NOT SPECIFIED | FET General Purpose Power | 10A | Single | 500V | 85W Tc | N-Channel | 560pF @ 100V | 380m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 15nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH150N15X4 | IXYS | $10.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp150n15x4-datasheets-5515.pdf | TO-247-3 | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 7.2m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB62N80Q3 | IXYS | $35.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfb62n80q3-datasheets-5706.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | 264 | No | 3 | Single | 1.56kW | 1 | FET General Purpose Power | R-PSIP-T3 | 54 ns | 300ns | 62 ns | 62A | 30V | SILICON | DRAIN | SWITCHING | 1560W Tc | 5000 mJ | 800V | N-Channel | 13600pF @ 25V | 140m Ω @ 31A, 10V | 6.5V @ 8mA | 62A Tc | 270nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFN50N120SK | IXYS | $69.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn50n120sk-datasheets-5709.pdf | SOT-227-4, miniBLOC | 20 Weeks | 1200V | N-Channel | 1895pF @ 1000V | 52m Ω @ 40A, 20V | 2.8V @ 10mA | 48A Tc | 115nC @ 20V | 20V | +20V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMW65R027M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K35AMFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | SOT-723 | 12 Weeks | VESM | 20V | 500mW Ta | N-Channel | 36pF @ 10V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 0.34nC @ 4.5V | 1.2V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSC015SMA070S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | D3Pak | 700V | N-Channel | 166A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB21NM50N-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb21nm50n1-datasheets-5720.pdf | 500V | 18A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 190mOhm | 3 | unknown | e3 | TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | FET General Purpose Power | Not Qualified | 18ns | 30 ns | 90 ns | 18A | 25V | SILICON | SWITCHING | 140W Tc | 72A | 480 mJ | 500V | N-Channel | 1950pF @ 25V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 65nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| IXTK400N15X4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtk400n15x4-datasheets-5726.pdf | TO-264-3, TO-264AA | 15 Weeks | 150V | 1500W Tc | N-Channel | 14500pF @ 25V | 3.1m Ω @ 100A, 10V | 4.5V @ 1mA | 400A Tc | 430nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB70N100X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfb70n100x-datasheets-5681.pdf | TO-264-3, TO-264AA | 19 Weeks | 1000V | 1785W Tc | N-Channel | 9160pF @ 25V | 89m Ω @ 35A, 10V | 6V @ 8mA | 70A Tc | 350nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN52N100X | IXYS | $44.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn52n100x-datasheets-5729.pdf | SOT-227-4, miniBLOC | 19 Weeks | 1000V | 830W Tc | N-Channel | 6725pF @ 25V | 125m Ω @ 26A, 10V | 6V @ 4mA | 44A Tc | 245nC @ 10V | 10V | ±30V |
