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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| R6047ENZ4C13 | ROHM Semiconductor | $23.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6047enz4c13-datasheets-5638.pdf | TO-247-3 | 3 | 8 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 481W Tc | 47A | 141A | 0.072Ohm | 1135 mJ | N-Channel | 3850pF @ 25V | 72m Ω @ 25.8A, 10V | 4V @ 1mA | 47A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| R6520KNZ4C13 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6520knz4c13-datasheets-5603.pdf | TO-247-3 | 3 | 8 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 231W Tc | 20A | 60A | 0.205Ohm | 444 mJ | N-Channel | 1550pF @ 25V | 205m Ω @ 9.5A, 10V | 5V @ 630μA | 20A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXKC23N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixkc23n60c5-datasheets-5640.pdf | ISOPLUS220™ | Lead Free | 3 | 20 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 147W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 5ns | 5 ns | 60 ns | 23A | 20V | SILICON | ISOLATED | SWITCHING | 0.1Ohm | 800 mJ | 600V | N-Channel | 2800pF @ 100V | 100m Ω @ 18A, 10V | 3.9V @ 1.2mA | 23A Tc | 80nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFH26N100X | IXYS | $14.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n100x-datasheets-5605.pdf | TO-247-3 | 19 Weeks | 1000V | 860W Tc | N-Channel | 3290pF @ 25V | 320m Ω @ 13A, 10V | 6V @ 4mA | 26A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ96N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq96n20p-datasheets-5608.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 225A | 0.024Ohm | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 250μA | 96A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFT24N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixft24n90p-datasheets-5610.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 660W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 40ns | 38 ns | 68 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 3.5V | 660W Tc | 48A | 0.42Ohm | 1000 mJ | 900V | N-Channel | 7200pF @ 25V | 3.5 V | 420m Ω @ 12A, 10V | 6.5V @ 1mA | 24A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| R6047KNZ4C13 | ROHM Semiconductor | $23.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6047knz4c13-datasheets-5613.pdf | TO-247-3 | 3 | 8 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 481W Tc | 47A | 141A | 0.072Ohm | 1135 mJ | N-Channel | 4300pF @ 25V | 72m Ω @ 25.8A, 10V | 5V @ 1mA | 47A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STFU13N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfu13n65m2-datasheets-5615.pdf | TO-220-3 Full Pack | 16 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STFU1 | NOT SPECIFIED | 10A | 650V | 25W Tc | N-Channel | 590pF @ 100V | 430m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R022S7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™S7 | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 600V | 390W Tc | N-Channel | 5639pF @ 300V | 22m Ω @ 23A, 12V | 4.5V @ 1.44mA | 23A Tc | 150nC @ 12V | 12V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKR25N80C | IXYS | $0.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkr25n80c-datasheets-5620.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | No SVHC | 125MOhm | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 2.5kV | 15ns | 6 ns | 72 ns | 25A | 20V | SILICON | ISOLATED | SWITCHING | 4V | 670 mJ | 800V | N-Channel | 150m Ω @ 18A, 10V | 4V @ 2mA | 25A Tc | 355nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||
| R6547KNZ4C13 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6547knz4c13-datasheets-5622.pdf | TO-247-3 | 3 | 8 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 480W Tc | 47A | 141A | 0.08Ohm | 1222 mJ | N-Channel | 4100pF @ 25V | 80m Ω @ 25.8A, 10V | 5V @ 1.72mA | 47A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IMZA65R107M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK520N075T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk520n075t2-datasheets-5624.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 520A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 1250W Tc | 1350A | 0.0022Ohm | 3000 mJ | N-Channel | 41000pF @ 25V | 2.2m Ω @ 100A, 10V | 5V @ 8mA | 520A Tc | 545nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA1N170DHV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n170dhv-datasheets-5626.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | not_compliant | e3 | Matte Tin (Sn) | 1A | 1700V | 290W Tc | N-Channel | 3090pF @ 25V | 16 Ω @ 500mA, 0V | 1A Tc | 47nC @ 5V | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP15NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw15nk50z-datasheets-1890.pdf | 500V | 14A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH VOLTAGE | No | e3 | Matte Tin (Sn) | STP15N | 3 | Single | 160W | 1 | FET General Purpose Power | 20 ns | 23ns | 15 ns | 62 ns | 7A | 30V | SILICON | SWITCHING | 3.75V | 160W Tc | TO-220AB | 56A | 500V | N-Channel | 2260pF @ 25V | 340m Ω @ 7A, 10V | 4.5V @ 100μA | 14A Tc | 106nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IMZ120R350M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imz120r350m1hxksa1-datasheets-5632.pdf | TO-247-4 | 16 Weeks | 1.2kV | 60W Tc | N-Channel | 182pF @ 800V | 350m Ω @ 2A, 18V | 5.7V @ 1mA | 4.7A Tc | 5.3nC @ 18V | 15V 18V | +23V, -7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK140N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtk140n20p-datasheets-5565.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | No SVHC | 18MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 800W | 1 | Not Qualified | 35ns | 90 ns | 150 ns | 140A | 20V | SILICON | DRAIN | SWITCHING | 5V | 800W Tc | 280A | 4000 mJ | 200V | N-Channel | 7500pF @ 25V | 18m Ω @ 70A, 10V | 5V @ 500μA | 140A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA150N15X4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta150n15x47-datasheets-5571.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 6.9m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT170N10P | IXYS | $17.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtt170n10p-datasheets-5567.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50ns | 33 ns | 90 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 715W Tc | 350A | 0.009Ohm | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 500mA, 10V | 5V @ 250μA | 170A Tc | 198nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTT6N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixtt6n120-datasheets-5569.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 2.6MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 33ns | 18 ns | 42 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 300W Tc | 6A | 24A | 500 mJ | 1.2kV | N-Channel | 1950pF @ 25V | 2.6 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA150N15X4-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta150n15x47-datasheets-5571.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 6.9m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK31Z60X,S1F | Toshiba Semiconductor and Storage | $9.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK170N10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n10p-datasheets-5575.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 10mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 714W | 1 | FET General Purpose Power | 50ns | 33 ns | 90 ns | 170A | 20V | 100V | SILICON | DRAIN | SWITCHING | 5V | 715W Tc | 150 ns | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 5 V | 9m Ω @ 500mA, 10V | 5V @ 4mA | 170A Tc | 198nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| R6020KNZ4C13 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020knz4c13-datasheets-5577.pdf | TO-247-3 | 3 | 8 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 231W Tc | 20A | 60A | 0.196Ohm | 418 mJ | N-Channel | 1550pF @ 25V | 196m Ω @ 9.5A, 10V | 5V @ 1mA | 20A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB6N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihb6n65ege3-datasheets-5579.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 14 Weeks | Unknown | 600mOhm | 3 | yes | No | GULL WING | Single | 78W | 1 | R-PSSO-G2 | 14 ns | 12ns | 20 ns | 30 ns | 7A | 20V | SILICON | SWITCHING | 2V | 78W Tc | 7A | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| R6030JNXC7G | ROHM Semiconductor | $10.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6030jnxc7g-datasheets-5584.pdf | 18 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMW65R107M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT100N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt100n25p-datasheets-5585.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 27MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSSO-G2 | 26ns | 28 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 250A | 2000 mJ | 250V | N-Channel | 6300pF @ 25V | 24m Ω @ 50A, 10V | 5V @ 250μA | 100A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFH20N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh20n80p-datasheets-5587.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | R-PSFM-T3 | 24ns | 24 ns | 85 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 0.52Ohm | 800V | N-Channel | 4685pF @ 25V | 520m Ω @ 10A, 10V | 5V @ 4mA | 20A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STW57N65M5-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw57n65m54-datasheets-5589.pdf | TO-247-4 | 15.9mm | 21.1mm | 5.1mm | Lead Free | 26 Weeks | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STW57N | Single | FET General Purpose Powers | 79 ns | 9ns | 8 ns | 14 ns | 42A | 25V | 250W Tc | 650V | N-Channel | 4200pF @ 100V | 63m Ω @ 21A, 10V | 5V @ 250μA | 42A Tc | 98nC @ 10V | 10V | ±25V |
