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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTT170N10P | IXYS | $17.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtt170n10p-datasheets-5567.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50ns | 33 ns | 90 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 715W Tc | 350A | 0.009Ohm | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 500mA, 10V | 5V @ 250μA | 170A Tc | 198nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTT6N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixtt6n120-datasheets-5569.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 2.6MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 33ns | 18 ns | 42 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 300W Tc | 6A | 24A | 500 mJ | 1.2kV | N-Channel | 1950pF @ 25V | 2.6 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTA150N15X4-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta150n15x47-datasheets-5571.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 6.9m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA44P15T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtp44p15t-datasheets-5534.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 65MOhm | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 298W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 50 ns | 44A | 15V | SILICON | DRAIN | SWITCHING | 150V | 298W Tc | -150V | P-Channel | 13400pF @ 25V | 65m Ω @ 22A, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| IXFH12N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n100p-datasheets-5538.pdf | TO-247-3 | Lead Free | 21 Weeks | Single | 463W | TO-247AD (IXFH) | 4.08nF | 25ns | 36 ns | 60 ns | 12A | 30V | 1000V | 463W Tc | 1.05Ohm | 1kV | N-Channel | 4080pF @ 25V | 1.05Ohm @ 6A, 10V | 5V @ 1mA | 12A Tc | 80nC @ 10V | 1.05 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH140N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh140n10p-datasheets-5540.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 11MOhm | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 600W | 1 | R-PSFM-T3 | 50ns | 26 ns | 85 ns | 140A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | TO-247AD | 300A | 2500 mJ | 100V | N-Channel | 4700pF @ 25V | 11m Ω @ 70A, 10V | 5V @ 4mA | 140A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA100N15X4 | IXYS | $9.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp100n15x4-datasheets-5520.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 150V | 375W Tc | N-Channel | 3970pF @ 25V | 11.5m Ω @ 50A, 10V | 4.5V @ 250μA | 100A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA130N15X4 | IXYS | $11.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta130n15x4-datasheets-5545.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 150V | 400W Tc | N-Channel | 4770pF @ 25V | 8m Ω @ 65A, 10V | 4.5V @ 250μA | 130A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK16E60W5,S1VX | Toshiba Semiconductor and Storage | $4.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 16 Weeks | 15.8A | 600V | 130W Tc | N-Channel | 1350pF @ 300V | 230m Ω @ 7.9A, 10V | 4.5V @ 790μA | 15.8A Ta | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA130N15X4-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta130n15x4-datasheets-5545.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 15 Weeks | 150V | 400W Tc | N-Channel | 4770pF @ 25V | 8m Ω @ 65A, 10V | 4.5V @ 250μA | 130A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP14NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb14nm65n-datasheets-5634.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 380mOhm | 3 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STP14N | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | 13ns | 20 ns | 55 ns | 6A | 25V | SILICON | SWITCHING | 125W Tc | TO-220AB | 12A | 48A | 650V | N-Channel | 1300pF @ 50V | 3 V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| IXTH36N50P | IXYS | $36.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth36n50p-datasheets-5556.pdf | 500V | 36A | TO-247-3 | Lead Free | 3 | No SVHC | 170MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 5V | 540W Tc | TO-247AD | 108A | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 5 V | 170m Ω @ 500mA, 10V | 5V @ 250μA | 36A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| FCHD190N65S3R0-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fchd190n65s3r0f155-datasheets-5558.pdf | TO-247-3 | 4 Weeks | yes | e3 | Tin (Sn) | 650V | 144W Tc | N-Channel | 1350pF @ 400V | 190m Ω @ 8.5A, 10V | 4.5V @ 390μA | 17A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH240N15X4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth240n15x4-datasheets-5560.pdf | TO-247-3 | 15 Weeks | 150V | 940W Tc | N-Channel | 8900pF @ 25V | 4.4m Ω @ 120A, 10V | 4.5V @ 250μA | 240A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH120N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh120n15p-datasheets-5523.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE ENERGY RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 33 ns | 42ns | 26 ns | 85 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | TO-247AD | 260A | 0.016Ohm | 2000 mJ | 150V | N-Channel | 4900pF @ 25V | 16m Ω @ 500mA, 10V | 5V @ 4mA | 120A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTH80N20L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixth80n20l-datasheets-5563.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | 3 | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 520W Tc | 2500 mJ | N-Channel | 6160pF @ 25V | 32m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP8NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp8nk80zfp-datasheets-8200.pdf | 800V | 6.2A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP8N | 3 | Single | 140W | 1 | FET General Purpose Power | 17 ns | 30ns | 28 ns | 48 ns | 6.2A | 30V | SILICON | SWITCHING | 140W Tc | TO-220AB | 24.8A | 800V | N-Channel | 1320pF @ 25V | 1.5 Ω @ 3.1A, 10V | 4.5V @ 100μA | 6.2A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHP11N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihp11n80ege3-datasheets-5529.pdf | TO-220-3 | 18 Weeks | 800V | 179W Tc | N-Channel | 1670pF @ 100V | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA62N15P | IXYS | $3.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta62n15p-datasheets-5532.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 350W | 1 | Not Qualified | R-PSSO-G2 | 38ns | 35 ns | 76 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 350W Tc | 150A | 0.04Ohm | 1000 mJ | 150V | N-Channel | 2250pF @ 25V | 40m Ω @ 31A, 10V | 5.5V @ 250μA | 62A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTP44P15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp44p15t-datasheets-5534.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 298W Tc | TO-220AB | 130A | 0.065Ohm | 1000 mJ | P-Channel | 13400pF @ 25V | 65m Ω @ 500mA, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| IXTA75N10P | IXYS | $4.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta75n10p-datasheets-5494.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 53ns | 45 ns | 66 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 200A | 0.025Ohm | 1000 mJ | 100V | N-Channel | 2250pF @ 25V | 25m Ω @ 500mA, 10V | 5.5V @ 250μA | 75A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STP150N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std150n3llh6-datasheets-9742.pdf | TO-220-3 | Lead Free | 3 | 3.3MOhm | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STP150 | 3 | Single | NOT SPECIFIED | 110W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 18ns | 46 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-220AB | 320A | 525 mJ | 30V | N-Channel | 4040pF @ 25V | 3.3m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TK16N60W,S1VF | Toshiba Semiconductor and Storage | $7.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-247-3 | 1.35nF | 16 Weeks | 190mOhm | Single | TO-247 | 1.35nF | 25ns | 5 ns | 100 ns | 15.8A | 30V | 600V | 130W Tc | 160mOhm | N-Channel | 1350pF @ 300V | 190mOhm @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 190 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDI030N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdi030n06-datasheets-5501.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.29mm | 4.83mm | 9.65mm | 3 | 9 Weeks | 2.387g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 231W | 1 | FET General Purpose Power | 39 ns | 178ns | 33 ns | 54 ns | 193A | 20V | SILICON | SWITCHING | 231W Tc | 772A | 60V | N-Channel | 9815pF @ 25V | 3.2m Ω @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 151nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TK16J60W5,S1VQ | Toshiba Semiconductor and Storage | $4.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI22NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb22nm60n-datasheets-5956.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | STI22N | 3 | 125W | 1 | FET General Purpose Power | 11 ns | 38 ns | 74 ns | 16A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 3V | 125W Tc | 64A | 0.22Ohm | N-Channel | 1330pF @ 50V | 3 V | 220m Ω @ 8A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFP56N30X3M | IXYS | $7.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp56n30x3m-datasheets-5510.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 300V | 36W Tc | N-Channel | 3750pF @ 25V | 27m Ω @ 28A, 10V | 4.5V @ 1.5mA | 56A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA180N10T2 | IXYS | $11.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfa180n10t2-datasheets-5513.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 480W Tc | 450A | 0.006Ohm | 750 mJ | N-Channel | 10500pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 250μA | 180A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTP150N15X4 | IXYS | $7.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp150n15x4-datasheets-5515.pdf | TO-220-3 | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 7.2m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP120P065T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/ixys-ixtp120p065t-datasheets-5518.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 298W | 1 | Other Transistors | Not Qualified | 28ns | 21 ns | 38 ns | 120A | 15V | SILICON | DRAIN | SWITCHING | 65V | 298W Tc | TO-220AB | 0.12A | 0.01Ohm | 1000 mJ | -65V | P-Channel | 13200pF @ 25V | 10m Ω @ 500mA, 10V | 4V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±15V |
