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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AUIRFB8405 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfb8405-datasheets-5201.pdf | TO-220-3 | 10.67mm | 9.02mm | 3.43mm | Lead Free | 16 Weeks | No SVHC | 3 | EAR99 | No | 1 | Single | 163W | FET General Purpose Power | 14 ns | 128ns | 77 ns | 55 ns | 120A | 20V | 40V | 3V | 163W Tc | N-Channel | 5193pF @ 25V | 3 V | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 161nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPA95R450P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa95r450p7xksa1-datasheets-5208.pdf | TO-220-3 Full Pack | 18 Weeks | 950V | 30W Tc | N-Channel | 1053pF @ 400V | 450m Ω @ 7.2A, 10V | 3.5V @ 360μA | 14A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP4N85XM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n85xm-datasheets-5212.pdf | TO-220-3 Full Pack | 19 Weeks | yes | 850V | 35W Tc | N-Channel | 247pF @ 25V | 2.5 Ω @ 2A, 10V | 5.5V @ 250μA | 3.5A Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3R2A10PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF165N65S3R0L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcpf165n65s3r0l-datasheets-5215.pdf | TO-220-3 Full Pack | 12 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 35W Tc | N-Channel | 1415pF @ 400V | 165m Ω @ 9.5A, 10V | 4.5V @ 1.9mA | 19A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120N06-06_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n0606ge3-datasheets-5221.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 175W Tc | N-Channel | 6495pF @ 25V | 6mOhm @ 30A, 10V | 3.5V @ 250μA | 119A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP240N60E-GE3 | Vishay Siliconix | $0.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp240n60ege3-datasheets-5223.pdf | TO-220-3 | 18 Weeks | TO-220AB | 600V | 78W Tc | N-Channel | 795pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP11NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std11nm65n-datasheets-8733.pdf | TO-220-3 | Lead Free | 3 | 380mOhm | EAR99 | No | e3 | Matte Tin (Sn) | STP11N | 3 | Single | 125W | 1 | FET General Purpose Power | R-PSFM-T3 | 11 ns | 13ns | 20 ns | 55 ns | 12A | 25V | SILICON | SWITCHING | 110W Tc | TO-220AB | 48A | 300 mJ | 650V | N-Channel | 800pF @ 50V | 455m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| STP24N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw24n60dm2-datasheets-3970.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP24N | 1 | Single | NOT SPECIFIED | 150W | 1 | 15 ns | 8.7ns | 15 ns | 60 ns | 18A | 25V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 72A | 0.2Ohm | 600V | N-Channel | 1055pF @ 100V | 200m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| STP18N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18n60m2-datasheets-5079.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | 280mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP18N | 1 | Single | 1 | 12 ns | 9ns | 10.6 ns | 47 ns | 13A | 25V | SILICON | DRAIN | SWITCHING | 600V | 600V | 110W Tc | TO-220AB | 52A | N-Channel | 791pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 21.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| AOT66616L | Alpha & Omega Semiconductor Inc. | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 18 Weeks | 60V | 8.3W Ta 125W Tc | N-Channel | 2870pF @ 30V | 3.2m Ω @ 20A, 10V | 3.4V @ 250μA | 38.5A Ta 140A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW66616 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 6.2W Ta 125W Tc | N-Channel | 2870pF @ 30V | 3.2m Ω @ 20A, 10V | 3.4V @ 250μA | 33A Ta 140A Tc | 60nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL620SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl620spbf-datasheets-5093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 360pF | 4.2 ns | 31ns | 17 ns | 18 ns | 5.2A | 10V | 200V | 2V | 3.1W Ta 50W Tc | 800mOhm | N-Channel | 360pF @ 25V | 800mOhm @ 3.1A, 10V | 2V @ 250μA | 5.2A Tc | 16nC @ 5V | 800 mΩ | 4V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFI9Z14GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfi9z14gpbf-datasheets-5098.pdf | -60V | -5.3A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | 3 | No | 1 | Single | 27W | TO-220-3 | 270pF | 11 ns | 63ns | 31 ns | 9.6 ns | -5.3A | 20V | 60V | 27W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | 500mOhm @ 3.2A, 10V | 4V @ 250μA | 5.3A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NTPF190N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntpf190n65s3hf-datasheets-5105.pdf | TO-220-3 Full Pack | 12 Weeks | yes | e3 | Tin (Sn) | 650V | 36W Tc | N-Channel | 1610pF @ 400V | 190m Ω @ 10A, 10V | 5V @ 430μA | 20A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB15N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb15n50ege3-datasheets-5110.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | Unknown | 3 | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSSO-G2 | 14.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 156W Tc | 28A | 0.28Ohm | 500V | N-Channel | 1162pF @ 100V | 280m Ω @ 7.5A, 10V | 4V @ 250μA | 14.5A Tc | 66nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STU16N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu16n65m2-datasheets-5114.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU16N | NOT SPECIFIED | 11A | 650V | 110W Tc | N-Channel | 718pF @ 100V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 19.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP10NK70Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp10nk70zfp-datasheets-6190.pdf | 700V | 8.6A | TO-220-3 | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | STP10 | 3 | Single | 150W | 1 | FET General Purpose Power | 22 ns | 19ns | 19 ns | 46 ns | 8.6A | 30V | SILICON | SWITCHING | 3.75V | 150W Tc | TO-220AB | 0.85Ohm | 700V | N-Channel | 2000pF @ 25V | 850m Ω @ 4.5A, 10V | 4.5V @ 100μA | 8.6A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFI820GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfi820gpbf-datasheets-5120.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | yes | No | e3 | MATTE TIN | 260 | 3 | 1 | Single | 40 | 30W | 1 | 2kV | 8 ns | 8.6ns | 16 ns | 33 ns | 2.1A | 20V | SILICON | SWITCHING | 4V | 30W Tc | TO-220AB | 520 ns | 8.4A | 500V | N-Channel | 360pF @ 25V | 3 Ω @ 1.3A, 10V | 4V @ 250μA | 2.1A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STF16N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf16n65m2-datasheets-5126.pdf | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STF16 | NOT SPECIFIED | 1 | R-PSFM-T3 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 25W Tc | TO-220AB | 44A | 0.36Ohm | 360 mJ | N-Channel | 718pF @ 100V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 19.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF190N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcpf190n60-datasheets-5130.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 12 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 39W | 1 | FET General Purpose Power | 20 ns | 10ns | 5 ns | 64 ns | 20.2A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 2.5V | 39W Tc | TO-220AB | 60.6A | 400 mJ | 650V | N-Channel | 2950pF @ 25V | 199m Ω @ 10A, 10V | 3.5V @ 250μA | 20.2A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPA60R180P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r180p7sxksa1-datasheets-2491.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 26W Tc | TO-220AB | 53A | 0.18Ohm | 56 mJ | N-Channel | 1081pF @ 400V | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 18A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18542KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Contains Lead | 6 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | 4.58mm | EAR99 | Copper, Tin | not_compliant | e3 | Matte Tin (Sn) | CSD18542 | Single | FET General Purpose Power | 6 ns | 5ns | 21 ns | 18 ns | 200A | 20V | DRAIN | 60V | 60V | 200W Tc | 170A | 400A | 14 pF | 281 mJ | N-Channel | 5070pF @ 30V | 44m Ω @ 100A, 10V | 2.2V @ 250μA | 200A Ta | 57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STFU18N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfu18n65m2-datasheets-5075.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STFU1 | NOT SPECIFIED | 12A | 650V | 25W Tc | N-Channel | 770pF @ 100V | 330m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 20nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW18N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18n60m2-datasheets-5079.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | STW18N | 1 | R-PSFM-T3 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 110W Tc | 52A | 0.28Ohm | 135 mJ | N-Channel | 791pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 21.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STP6N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf6n60m2-datasheets-1503.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 16 Weeks | 1.2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | No | STP6N | 1 | Single | 60W | 9.5 ns | 7.4ns | 22.5 ns | 24 ns | 4.5A | 25V | 600V | 60W Tc | N-Channel | 232pF @ 100V | 1.2 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 8nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF190N65S3R0L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | /files/onsemiconductor-fcpf190n65s3r0l-datasheets-5022.pdf | TO-220-3 Full Pack | 14 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 144W Tc | N-Channel | 1350pF @ 400V | 190m Ω @ 8.5A, 10V | 4.5V @ 1.7mA | 17A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF5N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf5n105k5-datasheets-5028.pdf | TO-220-3 Full Pack | 17 Weeks | 329.988449mg | 2.9Ohm | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF5N | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 15.5 ns | 8.5ns | 24 ns | 31 ns | 3A | 30V | 1050V | 25W Tc | 3A | 1.05kV | N-Channel | 210pF @ 100V | 3.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3A Tc | 12.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R6N50D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixty1r6n50d2-datasheets-1609.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | yes | UL RECOGNIZED | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 100W Tc | TO-263AA | N-Channel | 645pF @ 25V | 2.3 Ω @ 800mA, 0V | 1.6A Tc | 23.7nC @ 5V | Depletion Mode | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF12N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihf12n65ege3-datasheets-5035.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 6.000006g | 3 | No | 1 | Single | 33W | 1 | 16 ns | 19ns | 18 ns | 35 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 650V | 650V | 33W Tc | TO-220AB | 28A | 226 mJ | N-Channel | 1224pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 70nC @ 10V | 10V | ±30V |
