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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP27N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw27n60m2ep-datasheets-4414.pdf | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP27N | NOT SPECIFIED | 20A | 600V | 170W Tc | N-Channel | 1320pF @ 100V | 163m Ω @ 10A, 10V | 4.75V @ 250μA | 20A Tc | 33nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI270N4F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb270n4f3-datasheets-2564.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STI270N | 4 | Single | 330W | 1 | FET General Purpose Power | 22 ns | 180ns | 45 ns | 110 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4V | 330W Tc | 0.0026Ohm | 40V | N-Channel | 7400pF @ 25V | 2.6m Ω @ 80A, 10V | 4V @ 250μA | 160A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP32P20T | IXYS | $37.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp32p20t-datasheets-5492.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | TO-220AB | 96A | 0.13Ohm | 1000 mJ | P-Channel | 14500pF @ 25V | 130m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 185nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTA75N10P | IXYS | $4.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta75n10p-datasheets-5494.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 53ns | 45 ns | 66 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 200A | 0.025Ohm | 1000 mJ | 100V | N-Channel | 2250pF @ 25V | 25m Ω @ 500mA, 10V | 5.5V @ 250μA | 75A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STP150N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std150n3llh6-datasheets-9742.pdf | TO-220-3 | Lead Free | 3 | 3.3MOhm | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STP150 | 3 | Single | NOT SPECIFIED | 110W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 18ns | 46 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-220AB | 320A | 525 mJ | 30V | N-Channel | 4040pF @ 25V | 3.3m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK16N60W,S1VF | Toshiba Semiconductor and Storage | $7.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-247-3 | 1.35nF | 16 Weeks | 190mOhm | Single | TO-247 | 1.35nF | 25ns | 5 ns | 100 ns | 15.8A | 30V | 600V | 130W Tc | 160mOhm | N-Channel | 1350pF @ 300V | 190mOhm @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 190 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW15NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw15nm60n-datasheets-5445.pdf | TO-247-3 | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STW15N | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 14ns | 30 ns | 80 ns | 14A | 25V | SILICON | SWITCHING | 125W Tc | 56A | 0.299Ohm | 300 mJ | 600V | N-Channel | 1250pF @ 50V | 299m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 37nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| STF15N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi15n60m2ep-datasheets-5459.pdf | TO-220-3 Full Pack | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF15 | NOT SPECIFIED | 11A | 600V | 25W Tc | N-Channel | 590pF @ 100V | 378m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH130N20T | IXYS | $4.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth130n20t-datasheets-5451.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 830W Tc | TO-247AD | 320A | 0.016Ohm | 1000 mJ | N-Channel | 8800pF @ 25V | 16m Ω @ 500mA, 10V | 5V @ 1mA | 130A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFA3N120 | IXYS | $17.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n120-datasheets-5453.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 200W | 1 | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 200W Tc | 3A | 700 mJ | 1.2kV | N-Channel | 1050pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STW26NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb26nm60nd-datasheets-1560.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 38.000013g | 3 | EAR99 | STW26N | 1 | Single | 1 | 22 ns | 14.5ns | 27.5 ns | 69 ns | 21A | 25V | SILICON | DRAIN | SWITCHING | 190W Tc | 84A | 600V | N-Channel | 1817pF @ 100V | 175m Ω @ 10.5A, 10V | 5V @ 250μA | 21A Tc | 54.6nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| FCP11N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fcpf11n60nt-datasheets-3660.pdf | TO-220-3 | 10.16mm | 15.9mm | 4.7mm | Lead Free | 3 | 15 Weeks | 1.8g | No SVHC | 380MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 94W | 1 | FET General Purpose Power | Not Qualified | 13.6 ns | 9.1ns | 10 ns | 42 ns | 10.8A | 30V | SILICON | SWITCHING | 2V | 94W Tc | TO-220AB | 600V | N-Channel | 1505pF @ 100V | 299m Ω @ 5.4A, 10V | 4V @ 250μA | 10.8A Tc | 35.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP210N75F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp210n75f6-datasheets-5466.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 3.7MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | STP210 | 3 | Single | 300W | 1 | FET General Purpose Power | 34 ns | 70ns | 71 ns | 154 ns | 120A | 20V | SILICON | SWITCHING | 2V | 300W Tc | TO-220AB | 480A | 75V | N-Channel | 11800pF @ 25V | 3.7m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 171nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFH110N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh110n10p-datasheets-5469.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 480W | 1 | 21 ns | 25ns | 25 ns | 65 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 5V | 480W Tc | TO-247AD | 250A | 100V | N-Channel | 3550pF @ 25V | 15m Ω @ 500mA, 10V | 5V @ 4mA | 110A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BFL4026-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-bfl40261e-datasheets-5416.pdf | TO-220-3 Full Pack | Lead Free | 3 | 2 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | 14 ns | 37ns | 39 ns | 117 ns | 3.5A | 30V | SILICON | ISOLATED | 900V | 900V | 2W Ta 35W Tc | TO-220AB | 10A | N-Channel | 650pF @ 30V | 3.6 Ω @ 2.5A, 10V | 3.5A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| HUF75639G3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75639p3-datasheets-4015.pdf | 100V | 56A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 10 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 200W | 1 | FET General Purpose Power | 15 ns | 60ns | 25 ns | 20 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | 0.025Ohm | 100V | N-Channel | 2000pF @ 25V | 4 V | 25m Ω @ 56A, 10V | 4V @ 250μA | 56A Tc | 130nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AOTF380A60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS5™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 600V | 27W Tc | N-Channel | 955pF @ 100V | 380m Ω @ 5.5A, 10V | 3.8V @ 250μA | 11A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20A60W,S5VX | Toshiba Semiconductor and Storage | $2.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 1.68nF | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 600V | 45W Tc | 130mOhm | N-Channel | 1680pF @ 300V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | 155 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP76N15T2 | IXYS | $1.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfp76n15t2-datasheets-5436.pdf | TO-220-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 76A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 350W Tc | TO-220AB | 200A | 0.02Ohm | 500 mJ | N-Channel | 5800pF @ 25V | 20m Ω @ 38A, 10V | 4.5V @ 250μA | 76A Tc | 97nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STF10NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf10nk50z-datasheets-5438.pdf | 500V | 9A | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 700mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF10N | 3 | Single | 30W | 1 | FET General Purpose Power | 19 ns | 17ns | 15 ns | 43 ns | 4.5A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 9A | 500V | N-Channel | 1219pF @ 25V | 700m Ω @ 4.5A, 10V | 4.5V @ 100μA | 9A Tc | 39.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRF740ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf740alpbf-datasheets-5440.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | Lead Free | 2.387001g | Unknown | 550mOhm | 3 | 1 | Single | 3.1W | 1 | I2PAK | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 4V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1030pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFI840GLCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfi840glcpbf-datasheets-5358.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 850mOhm | 3 | 1 | Single | 40W | 1 | TO-220-3 | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 4.5A | 30V | 500V | 4V | 40W Tc | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 850mOhm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FQP12N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqp12n60c-datasheets-5364.pdf&product=onsemiconductor-fqp12n60c-6843641 | 600V | 12A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 6 Weeks | 1.8g | No SVHC | 650mOhm | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 225W | 1 | Not Qualified | 30 ns | 85ns | 90 ns | 155 ns | 12A | 30V | 600V | SILICON | SWITCHING | 4V | 225W Tc | TO-220AB | 48A | 870 mJ | 600V | N-Channel | 2290pF @ 25V | 4 V | 650m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| AOT380A60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS5™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 18 Weeks | 600V | 131W Tc | N-Channel | 955pF @ 100V | 380m Ω @ 5.5A, 10V | 3.8V @ 250μA | 11A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48RPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz48rpbf-datasheets-5378.pdf | 60V | 50A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | 1 | Single | 190W | 1 | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 190W Tc | TO-220AB | 180 ns | 290A | 60V | N-Channel | 2400pF @ 25V | 18m Ω @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STB80NF55-06-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp80nf5506-datasheets-0377.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STB80N | 3 | Single | 300W | 1 | FET General Purpose Power | 27 ns | 155ns | 65 ns | 125 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.0065Ohm | 55V | N-Channel | 4400pF @ 25V | 6.5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 189nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STW8NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp8nk80zfp-datasheets-8200.pdf | 800V | 6.2A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW8N | 3 | Single | 140W | 1 | FET General Purpose Power | 17 ns | 30ns | 28 ns | 48 ns | 6.2A | 30V | SILICON | SWITCHING | 3.75V | 140W Tc | 24.8A | 800V | N-Channel | 1320pF @ 25V | 1.5 Ω @ 3.1A, 10V | 4.5V @ 100μA | 6.2A Tc | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STW21N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw21n65m5-datasheets-5396.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 190mOhm | 3 | yes | EAR99 | No | e3 | Tin (Sn) | STW21N | 3 | Single | 125W | 1 | FET General Purpose Power | 10ns | 24 ns | 12 ns | 17A | 25V | SILICON | SWITCHING | 4V | 125W Tc | 68A | 400 mJ | 650V | N-Channel | 1950pF @ 100V | 190m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 50nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| FQP13N50C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp13n50c-datasheets-5399.pdf&product=onsemiconductor-fqp13n50c-6843647 | 500V | 13A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4.535924g | No SVHC | 480mOhm | 3 | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 195W | 1 | 25 ns | 100ns | 100 ns | 130 ns | 13A | 30V | 500V | SILICON | SWITCHING | 195W Tc | TO-220AB | 52A | 860 mJ | 500V | N-Channel | 2055pF @ 25V | 4 V | 480m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| FCPF190N65FL1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf190n65fl1-datasheets-5409.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | 2.27g | 190mOhm | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 11ns | 4.2 ns | 62 ns | 20.6A | 30V | SILICON | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 400 mJ | 650V | N-Channel | 3055pF @ 100V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20.6A Tc | 78nC @ 10V | 10V | ±20V |
