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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP6N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf6n65m2-datasheets-4408.pdf | TO-220-3 | 16 Weeks | 329.988449mg | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP6N | 1 | NOT SPECIFIED | 19 ns | 7ns | 20 ns | 6.5 ns | 4A | 25V | 3V | 60W Tc | 650V | N-Channel | 226pF @ 100V | 1.35 Ω @ 2A, 10V | 4V @ 250μA | 4A Tc | 9.8nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF13N50FT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf13n50ft-datasheets-5056.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | 28 ns | 54ns | 47 ns | 75 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 42W Tc | TO-220AB | 48A | 0.54Ohm | 684 mJ | 500V | N-Channel | 1930pF @ 25V | 540m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IRF730ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irf730aspbf-datasheets-5061.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 74W | 1 | D2PAK | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 4.5V | 74W Tc | 1Ohm | 400V | N-Channel | 600pF @ 25V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FQPF10N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqpf10n60c-datasheets-5065.pdf&product=onsemiconductor-fqpf10n60c-6843579 | 600V | 9.5A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | FAST SWITCHING | 95A | not_compliant | e3 | Tin (Sn) | 600V | NOT SPECIFIED | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | 23 ns | 69ns | 77 ns | 144 ns | 9.5A | 30V | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 700 mJ | 600V | N-Channel | 2040pF @ 25V | 730m Ω @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 57nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| STP8N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu8n80k5-datasheets-4849.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 950mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP8N | Single | 110W | 1 | FET General Purpose Power | 12 ns | 14ns | 20 ns | 32 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-220AB | 6A | 24A | 800V | N-Channel | 450pF @ 100V | 950m Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 16.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STFU18N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfu18n65m2-datasheets-5075.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STFU1 | NOT SPECIFIED | 12A | 650V | 25W Tc | N-Channel | 770pF @ 100V | 330m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 20nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW18N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18n60m2-datasheets-5079.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | STW18N | 1 | R-PSFM-T3 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 110W Tc | 52A | 0.28Ohm | 135 mJ | N-Channel | 791pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 21.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| STP6N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf6n60m2-datasheets-1503.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 16 Weeks | 1.2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | No | STP6N | 1 | Single | 60W | 9.5 ns | 7.4ns | 22.5 ns | 24 ns | 4.5A | 25V | 600V | 60W Tc | N-Channel | 232pF @ 100V | 1.2 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 8nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL40B215 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount, Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl40b215-datasheets-4944.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 12 Weeks | Unknown | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 21 ns | 63 ns | 120A | 20V | 40V | 2.4V | 143W Tc | N-Channel | 5225pF @ 25V | 2.7m Ω @ 98A, 10V | 2.4V @ 100μA | 120A Tc | 84nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ661-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-2sj661dl1e-datasheets-4229.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 2 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1 | 33 ns | 285ns | 195 ns | 295 ns | 38A | 20V | 60V | 1.65W Ta 65W Tc | -60V | P-Channel | 4360pF @ 20V | 39m Ω @ 19A, 10V | 38A Ta | 80nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4R1A10PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA95R750P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa95r750p7xksa1-datasheets-4960.pdf | TO-220-3 Full Pack | 18 Weeks | 950V | 28W Tc | N-Channel | 712pF @ 400V | 750m Ω @ 4.5A, 10V | 3.5V @ 220μA | 9A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI540GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli540gpbf-datasheets-4964.pdf | TO-220-3 Full Pack, Isolated Tab | 11 Weeks | 3 | No | 48W | 1 | TO-220-3 | 2.2nF | 8.5 ns | 170ns | 80 ns | 35 ns | 17A | 10V | 100V | 48W Tc | N-Channel | 2200pF @ 25V | 77mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 64nC @ 5V | 77 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RJ1P12BBDTLL | ROHM Semiconductor | $14.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rj1p12bbdtll-datasheets-4974.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 178W Tc | 120A | 240A | 0.0058Ohm | 125 mJ | N-Channel | 4170pF @ 50V | 5.8m Ω @ 50A, 10V | 4V @ 2.5mA | 120A Tc | 80nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDP120N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp120n10-datasheets-4976.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 12MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 170W | 1 | FET General Purpose Power | 27 ns | 105ns | 15 ns | 39 ns | 74A | 20V | SILICON | SWITCHING | 2.5V | 170W Tc | TO-220AB | 296A | 100V | N-Channel | 5605pF @ 25V | 12m Ω @ 74A, 10V | 4.5V @ 250μA | 74A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SQP60N06-15_GE3 | Vishay Siliconix | $1.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp60n0615ge3-datasheets-4987.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 107W Tc | TO-220AB | 56A | 190A | 0.015Ohm | 42 mJ | N-Channel | 2480pF @ 25V | 15m Ω @ 30A, 10V | 3.5V @ 250μA | 56A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STF10NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf10nm50n-datasheets-4989.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 630MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF10N | 3 | Single | 25W | 1 | FET General Purpose Power | 7.8 ns | 4.4ns | 12 ns | 7.8 ns | 7A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 25W Tc | TO-220AB | 7A | 28A | 500V | N-Channel | 450pF @ 50V | 630m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| IPAN60R125PFD7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Through Hole | -40°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 650V | 32W Tc | N-Channel | 1503pF @ 400V | 125m Ω @ 7.8A, 10V | 4.5V @ 390μA | 25A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP10N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfi10n62k3-datasheets-5412.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 680mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | STP10 | 3 | 125W | 1 | FET General Purpose Power | 14.5 ns | 15ns | 31 ns | 41 ns | 8.4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 620V | 3.75V | 125W Tc | TO-220AB | 220 mJ | 650V | N-Channel | 1250pF @ 50V | 3.75 V | 750m Ω @ 4A, 10V | 4.5V @ 100μA | 8.4A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRFI730GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfi730gpbf-datasheets-4994.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 12 Weeks | 6.000006g | 1Ohm | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 700pF | 10 ns | 15ns | 14 ns | 38 ns | 3.7A | 20V | 400V | 35W Tc | 1Ohm | N-Channel | 700pF @ 25V | 4 V | 1Ohm @ 2.1A, 10V | 4V @ 250μA | 3.7A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP2N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std2n105k5-datasheets-9591.pdf | TO-220-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP2N | NOT SPECIFIED | FET General Purpose Power | 1.5A | Single | 1050V | 60W Tc | N-Channel | 115pF @ 100V | 8 Ω @ 750mA, 10V | 5V @ 100μA | 1.5A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP100N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp100n10-datasheets-5004.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 10MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 208W | 1 | FET General Purpose Power | Not Qualified | 70 ns | 265ns | 115 ns | 125 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 208W Tc | TO-220AB | 100V | N-Channel | 7300pF @ 25V | 10m Ω @ 75A, 10V | 4.5V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| STI76NF75 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb76nf75-datasheets-8641.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | STI7 | 3 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 75V | 75V | 300W Tc | 700 mJ | N-Channel | 3700pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP100NF04 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 40V | 120A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 4.6MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP100 | 3 | Single | 300W | 1 | FET General Purpose Power | 35 ns | 220ns | 50 ns | 80 ns | 120A | 20V | SILICON | SWITCHING | 4V | 300W Tc | TO-220AB | 480A | 40V | N-Channel | 5100pF @ 25V | 4.6m Ω @ 50A, 10V | 4V @ 250μA | 120A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FQA32N20C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqa32n20c-datasheets-4897.pdf | 200V | 32A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 12 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 204W | 1 | FET General Purpose Power | 25 ns | 270ns | 210 ns | 245 ns | 32A | 30V | SILICON | SWITCHING | 4V | 204W Tc | 0.082Ohm | 955 mJ | 200V | N-Channel | 2220pF @ 25V | 82m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STF7N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb7n52k3-datasheets-4643.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STF7N | 3 | 25W | 1 | FET General Purpose Power | 13 ns | 11ns | 19 ns | 36 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 6.2A | 25A | 0.98Ohm | 525V | N-Channel | 870pF @ 100V | 3.75 V | 850m Ω @ 3A, 10V | 4.5V @ 50μA | 6A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SIHB12N60ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 600V | 147W Tc | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI10N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi10n62k3-datasheets-5412.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | 3 | No SVHC | 3 | EAR99 | No | STI10N | 3 | Single | 1 | FET General Purpose Power | 14.5 ns | 15ns | 31 ns | 41 ns | 8.4A | 30V | SILICON | SWITCHING | 620V | 620V | 3.75V | 125W Tc | 0.75Ohm | 220 mJ | N-Channel | 1250pF @ 50V | 750m Ω @ 4A, 10V | 4.5V @ 100μA | 8.4A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IPS60R210PFD7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Through Hole | -40°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 650V | 64W Tc | N-Channel | 1015pF @ 400V | 210m Ω @ 4.9A, 10V | 4.5V @ 240μA | 16A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF5N90 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqpf5n90-datasheets-4911.pdf | 900V | 3A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 8 Weeks | 2.27g | 2.3Ohm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 51W | 1 | FET General Purpose Power | 28 ns | 65ns | 50 ns | 65 ns | 3A | 30V | SILICON | ISOLATED | SWITCHING | 51W Tc | 3A | 660 mJ | 900V | N-Channel | 1550pF @ 25V | 2.3 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 40nC @ 10V | 10V | ±30V |
