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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STF5N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu5n62k3-datasheets-5118.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.6Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | STF5N | 3 | Single | 25W | 1 | FET General Purpose Power | 12 ns | 8ns | 21 ns | 40 ns | 4.2A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 25W Tc | TO-220AB | 16.8A | 120 mJ | 620V | N-Channel | 680pF @ 50V | 1.6 Ω @ 2.1A, 10V | 4.5V @ 50μA | 4.2A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| DMNH6008SCTQ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh6008sctq-datasheets-4933.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 210W Tc | TO-220AB | 200A | 0.008Ohm | 190 mJ | N-Channel | 2596pF @ 30V | 8m Ω @ 20A, 10V | 4V @ 250μA | 130A Tc | 21nC @ 10V | 10V | 20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHB12N60ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | TO-263 (D2Pak) | 600V | 147W Tc | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI10NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu10nm60n-datasheets-5644.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | No | STI10N | Single | 70W | 10 ns | 12ns | 15 ns | 32 ns | 10A | 25V | 600V | 70W Tc | 650V | N-Channel | 540pF @ 50V | 550m Ω @ 4A, 10V | 4V @ 250μA | 10A Tc | 19nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP25N15-52_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp25n1552ge3-datasheets-4940.pdf | TO-220-3 | 12 Weeks | TO-220AB | 150V | 107W Tc | N-Channel | 2360pF @ 25V | 52mOhm @ 15A, 10V | 4V @ 250μA | 25A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP11NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp11nm50n-datasheets-4942.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 470mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | STP11N | 3 | Single | 70W | 1 | FET General Purpose Power | 8 ns | 10ns | 10 ns | 33 ns | 8.5A | 25V | SILICON | SWITCHING | 3V | 70W Tc | TO-220AB | 9A | 500V | N-Channel | 547pF @ 50V | 470m Ω @ 4.5A, 10V | 4V @ 250μA | 8.5A Tc | 19nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| FQA32N20C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqa32n20c-datasheets-4897.pdf | 200V | 32A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 12 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 204W | 1 | FET General Purpose Power | 25 ns | 270ns | 210 ns | 245 ns | 32A | 30V | SILICON | SWITCHING | 4V | 204W Tc | 0.082Ohm | 955 mJ | 200V | N-Channel | 2220pF @ 25V | 82m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STF7N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb7n52k3-datasheets-4643.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STF7N | 3 | 25W | 1 | FET General Purpose Power | 13 ns | 11ns | 19 ns | 36 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 6.2A | 25A | 0.98Ohm | 525V | N-Channel | 870pF @ 100V | 3.75 V | 850m Ω @ 3A, 10V | 4.5V @ 50μA | 6A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHB12N60ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 600V | 147W Tc | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI10N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi10n62k3-datasheets-5412.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | 3 | No SVHC | 3 | EAR99 | No | STI10N | 3 | Single | 1 | FET General Purpose Power | 14.5 ns | 15ns | 31 ns | 41 ns | 8.4A | 30V | SILICON | SWITCHING | 620V | 620V | 3.75V | 125W Tc | 0.75Ohm | 220 mJ | N-Channel | 1250pF @ 50V | 750m Ω @ 4A, 10V | 4.5V @ 100μA | 8.4A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHP10N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp10n40dge3-datasheets-4383.pdf | TO-220-3 | 3 | 13 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | FET General Purpose Power | 12 ns | 18ns | 14 ns | 18 ns | 10A | 5V | SILICON | SWITCHING | 147W Tc | TO-220AB | 0.6Ohm | 400V | N-Channel | 526pF @ 100V | 600m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STFU6N65 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TA | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 16 Weeks | STFU6 | 650V | 620mW Ta 77W Tc | N-Channel | 463pF @ 25V | 2.7 Ω @ 2A, 10V | 4V @ 250μA | 4A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120N06-6M7_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | TO-220-3 Full Pack | 12 Weeks | TO-220AB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A50W,S5X | Toshiba Semiconductor and Storage | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU8N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu8n80k5-datasheets-4849.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STU8N | Single | 110W | 1 | FET General Purpose Power | 12 ns | 14ns | 20 ns | 32 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 110W Tc | 6A | 24A | 0.95Ohm | 800V | N-Channel | 450pF @ 100V | 950m Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 16.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STF6N65K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6n65k3-datasheets-4448.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 1.3Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | STF6N | 3 | Single | 30W | 1 | 14 ns | 15ns | 22 ns | 54 ns | 5.4A | 30V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 650V | N-Channel | 880pF @ 50V | 1.3 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.4A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FDPF33N25TRDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdpf33n25trdtu-datasheets-4858.pdf | TO-220-3 Full Pack, Formed Leads | 4 Weeks | 2.565g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | NOT SPECIFIED | Single | NOT SPECIFIED | FET General Purpose Power | 250V | 37W Tc | 33A | N-Channel | 2135pF @ 25V | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK380A65Y,S4X | Toshiba Semiconductor and Storage | $1.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP7N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp7n60ege3-datasheets-4865.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 78W | 1 | FET General Purpose Powers | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | SILICON | SWITCHING | 2V | 78W Tc | TO-220AB | 7A | 0.6Ohm | 600V | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FDPF12N60NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp12n60nz-datasheets-4608.pdf | TO-220-3 Full Pack | Lead Free | 3 | 7 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | Single | 39W | 1 | FET General Purpose Power | 25 ns | 110ns | 130 ns | 170 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 48A | 0.65Ohm | 565 mJ | 600V | N-Channel | 1676pF @ 25V | 650m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FCPF190N65S3L1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcpf190n65s3l1-datasheets-4883.pdf | TO-220-3 Full Pack | 12 Weeks | 2.27g | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 650V | 33W Tc | N-Channel | 1225pF @ 400V | 190m Ω @ 7A, 10V | 4.5V @ 1.4mA | 14A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP100N04-3M6_GE3 | Vishay Siliconix | $1.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp100n043m6ge3-datasheets-4808.pdf | TO-220-3 | 12 Weeks | TO-220AB | 40V | 120W Tc | N-Channel | 7200pF @ 25V | 3.6mOhm @ 30A, 10V | 3.5V @ 250μA | 100A Tc | 135nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF11N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcp11n60-datasheets-4097.pdf&product=onsemiconductor-fcpf11n60-6843534 | 600V | 11A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 6 Weeks | 2.27g | No SVHC | 380MOhm | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 36W | 1 | 34 ns | 98ns | 56 ns | 119 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 36W Tc | TO-220AB | 600V | N-Channel | 1490pF @ 25V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| FCP7N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf7n60-datasheets-5101.pdf | 600V | 11A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 12 Weeks | 1.8g | No SVHC | 600MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 83W | 1 | FET General Purpose Power | 35 ns | 55ns | 32 ns | 75 ns | 7A | 30V | SILICON | SWITCHING | 5V | 83W Tc | TO-220AB | 7A | 600V | N-Channel | 920pF @ 25V | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRF820ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf820alpbf-datasheets-4820.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 8 Weeks | 2.387001g | 3Ohm | No | 1 | Single | 50W | 1 | I2PAK | 340pF | 8.1 ns | 12ns | 13 ns | 16 ns | 2.5A | 30V | 500V | 50W Tc | 3Ohm | 500V | N-Channel | 340pF @ 25V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 2.5A Tc | 17nC @ 10V | 3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STF7LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf7ln80k5-datasheets-4826.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STF7LN | NOT SPECIFIED | 5A | 800V | 25W Tc | N-Channel | 270pF @ 100V | 1.15 Ω @ 2.5A, 10V | 5V @ 100μA | 5A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP02N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp02n120p-datasheets-4830.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 200mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 33W Tc | TO-220AB | 0.2A | 0.6A | 0.075Ohm | 40 mJ | N-Channel | 104pF @ 25V | 75 Ω @ 100mA, 10V | 4V @ 100μA | 200mA Tc | 4.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| CSD18502Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD18502 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 3.2W Ta 156W Tc | 26A | 400A | 0.0033Ohm | 27 pF | N-Channel | 5070pF @ 20V | 2.3m Ω @ 30A, 10V | 2.2V @ 250μA | 100A Ta | 33nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| CSD17556Q5BT | Texas Instruments | $2.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | 950μm | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD17556 | Single | NOT SPECIFIED | 1 | 14 ns | 26ns | 12 ns | 27 ns | 215A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 191W Tc | 34A | 214A | 500 mJ | N-Channel | 7020pF @ 15V | 1.4m Ω @ 40A, 10V | 1.65V @ 250μA | 100A Ta | 39nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPAN60R210PFD7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Through Hole | -40°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 650V | 25W Tc | N-Channel | 1015pF @ 400V | 210m Ω @ 4.9A, 10V | 4.5V @ 240μA | 16A Tc | 23nC @ 10V | 10V | ±20V |
