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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| VN2106N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/microchiptechnology-vn2106n3g-datasheets-8323.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | Tin | No | e3 | BOTTOM | 1 | Single | 1W | 1 | 3 ns | 5ns | 5 ns | 6 ns | 300mA | 20V | SILICON | SWITCHING | 1W Tc | 4Ohm | 5 pF | 60V | N-Channel | 50pF @ 25V | 4 Ω @ 500mA, 10V | 2.4V @ 1mA | 300mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17318Q2T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd17318q2t-datasheets-7918.pdf | 6-WDFN Exposed Pad | 2mm | 2mm | 6 | 6 Weeks | 6 | ACTIVE (Last Updated: 3 days ago) | yes | 750μm | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | NOT SPECIFIED | CSD17318 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 30V | 30V | 16W Tc | 10A | 0.03Ohm | 51 pF | 7.7 mJ | N-Channel | 879pF @ 15V | 15.1m Ω @ 8A, 8V | 1.2V @ 250μA | 25A Tc | 6nC @ 4.5V | 2.5V 8V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4858N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntd4858nt4g-datasheets-0262.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 2W | 1 | FET General Purpose Power | 17.3ns | 2.8 ns | 23.8 ns | 13.6A | 20V | SILICON | DRAIN | SWITCHING | 1.3W Ta 54.5W Tc | 25V | N-Channel | 1563pF @ 12V | 6.2m Ω @ 30A, 10V | 2.5V @ 250μA | 11.2A Ta 73A Tc | 19.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0106N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/microchiptechnology-vp0106n3g-datasheets-8357.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 740mW | 1 | 4 ns | 5ns | 4 ns | 8 ns | 250mA | 20V | SILICON | SWITCHING | 60V | 1W Tc | 0.25A | 8Ohm | 8 pF | -60V | P-Channel | 60pF @ 25V | 8 Ω @ 500mA, 10V | 3.5V @ 1mA | 250mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPB020N10N5LFATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb020n10n5lfatma1-datasheets-7522.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | 13 Weeks | 1 | 313W | 150°C | PG-TO263-3 | 7 ns | 128 ns | 29A | 20V | 100V | 313W Tc | 1.8mOhm | 100V | N-Channel | 840pF @ 50V | 2mOhm @ 100A, 10V | 4.1V @ 270μA | 120A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMW120R045M1XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imw120r045m1xksa1-datasheets-8274.pdf | TO-247-3 | 20 Weeks | 1.2kV | 228W Tc | N-Channel | 1.9nF @ 800V | 59m Ω @ 20A, 15V | 5.7V @ 10mA | 52A Tc | 52nC @ 15V | 15V | +20V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT1N250HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n250hv-datasheets-8277.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 1 | FET General Purpose Power | R-PSSO-G2 | 1.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 2500V | 2500V | 250W Tc | 6A | N-Channel | 1660pF @ 25V | 40 Ω @ 750mA, 10V | 4V @ 250μA | 1.5A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3206PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3206trrpbf-datasheets-3065.pdf | 60V | 210A | TO-220-3 | 10.668mm | 19.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3MOhm | 3 | EAR99 | Tin | No | e3 | 1 | Single | 300W | 1 | FET General Purpose Power | 175°C | 19 ns | 82ns | 83 ns | 55 ns | 210A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-220AB | 50 ns | 840A | 60V | N-Channel | 6540pF @ 50V | 3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN230N20T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixfn230n20t-datasheets-8289.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 1090W Tc | 630A | 0.0075Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 8mA | 220A Tc | 378nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTF02N450 | IXYS | $36.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtf02n450-datasheets-8292.pdf | i4-Pac™-5 (3 Leads) | 28 Weeks | 3 | unknown | Single | 78W | 1 | FET General Purpose Power | 48ns | 143 ns | 28 ns | 200mA | 20V | 4500V | 78W Tc | 0.2A | 4.5kV | N-Channel | 256pF @ 25V | 750 Ω @ 10mA, 10V | 6.5V @ 250μA | 200mA Tc | 10.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STE53NC50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ II | Chassis Mount, Panel, Screw | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste53nc50-datasheets-8295.pdf | 500V | 53A | ISOTOP | 38.2mm | 9.1mm | 25.5mm | Lead Free | 4 | 8 Weeks | No SVHC | 80mOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | UPPER | UNSPECIFIED | STE53 | 4 | Single | 460W | 1 | FET General Purpose Power | 2.5kV | 46 ns | 70ns | 38 ns | 53A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 460W Tc | 500V | N-Channel | 11200pF @ 25V | 80m Ω @ 27A, 10V | 4V @ 250μA | 53A Tc | 434nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STP11NK50ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp11nk50zfp-datasheets-8299.pdf | TO-220-3 Full Pack | 10.4mm | 20mm | 4.6mm | Lead Free | 3 | No SVHC | 520MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | AVALANCHE RATED | Tin | No | TO-220FP-7012510 | e3 | STP11N | 3 | 1 | Single | 30W | 1 | FET General Purpose Power | 150°C | 14.5 ns | 18ns | 15 ns | 41 ns | 10A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 40A | 500V | N-Channel | 1390pF @ 25V | 520m Ω @ 4.5A, 10V | 4.5V @ 100μA | 10A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFN56N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfn56n90p-datasheets-8305.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 35 Weeks | 135MOhm | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1kW | 1 | FET General Purpose Power | Not Qualified | 80ns | 38 ns | 93 ns | 56A | SILICON | ISOLATED | SWITCHING | 1000W Tc | 168A | 2000 mJ | 900V | N-Channel | 23000pF @ 25V | 135m Ω @ 28A, 10V | 6.5V @ 3mA | 56A Tc | 375nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| NDFP03N150CG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | /files/onsemiconductor-ndfp03n150cg-datasheets-8308.pdf | TO-220-3 Full Pack | 28.85mm | 4.7mm | 10.16mm | Lead Free | 4 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1 | Single | 15 ns | 20ns | 44 ns | 148 ns | 2.5A | 30V | 1500V | 2W Ta 32W Tc | 1.5kV | N-Channel | 650pF @ 30V | 10.5 Ω @ 1A, 10V | 2.5A Ta | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2104N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp2104n3g-datasheets-8312.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 740mW | 1 | Not Qualified | 4 ns | 4ns | 4 ns | 5 ns | -250mA | 20V | SILICON | SWITCHING | 40V | 740mW Ta | 6Ohm | -40V | P-Channel | 60pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | 175mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| VN0104N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn0104n3g-datasheets-8317.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 2 Weeks | 219.992299mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 3 ns | 6 ns | 350mA | 20V | SILICON | SWITCHING | 1W Tc | 0.5A | 3Ohm | 8 pF | 40V | N-Channel | 65pF @ 25V | 3 Ω @ 1A, 10V | 2.4V @ 1mA | 350mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA96P085T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixth96p085t-datasheets-1752.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 298W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 34ns | 22 ns | 45 ns | 96A | 15V | SILICON | DRAIN | SWITCHING | 85V | 298W Tc | 300A | -85V | P-Channel | 13100pF @ 25V | 13m Ω @ 48A, 10V | 4V @ 250μA | 96A Tc | 180nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| IPT65R033G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipt65r033g7xtma1-datasheets-7912.pdf | 8-PowerSFN | 2.4mm | 18 Weeks | yes | EAR99 | PG-HSOF-8 | e3 | Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | 391W | 150°C | 20 ns | 85 ns | 69A | 20V | 391W Tc | 650V | N-Channel | 5000pF @ 400V | 33m Ω @ 28.9A, 10V | 4V @ 1.44mA | 69A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSC015SMA070B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | TO-247-3 | 17 Weeks | TO-247-3 | 700V | 400W Tc | N-Channel | 4500pF @ 700V | 19mOhm @ 40A, 20V | 2.4V @ 1mA | 131A Tc | 215nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCTW90N65G2V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~200°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sctw90n65g2v-datasheets-8272.pdf | TO-247-3 | 3 | ACTIVE (Last Updated: 8 months ago) | not_compliant | NO | SINGLE | SCTW90 | 1 | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 390W Tc | 110A | 220A | N-Channel | 3300pF @ 400V | 25m Ω @ 50A, 18V | 5V @ 250μA | 90A Tc | 157nC @ 18V | 18V | +22V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP037N08N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb035n08n3gatma1-datasheets-8879.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3 | Single | 214W | 1 | FET General Purpose Power | 23 ns | 79ns | 14 ns | 45 ns | 100A | 20V | 80V | SILICON | SWITCHING | 214W Tc | TO-220AB | 400A | 80V | N-Channel | 8110pF @ 40V | 3.75m Ω @ 100A, 10V | 3.5V @ 155μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFK48N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfn48n50-datasheets-2171.pdf | 500V | 48A | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 20 Weeks | No SVHC | 100mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | FET General Purpose Power | 30 ns | 60ns | 30 ns | 100 ns | 48A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 500W Tc | 500V | N-Channel | 8400pF @ 25V | 4 V | 100m Ω @ 24A, 10V | 4V @ 8mA | 48A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFK44N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk44n80p-datasheets-8213.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 190MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.04kW | 1 | 22ns | 27 ns | 75 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1040W Tc | 800V | N-Channel | 12000pF @ 25V | 190m Ω @ 22A, 10V | 5V @ 8mA | 44A Tc | 198nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPW55N80C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C3 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spw55n80c3fksa1-datasheets-8215.pdf | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 500W Tc | 150A | 0.085Ohm | 2150 mJ | N-Channel | 7520pF @ 100V | 85m Ω @ 32.6A, 10V | 3.9V @ 3.3mA | 54.9A Tc | 288nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP2907ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfp2907zpbf-datasheets-8220.pdf | 75V | 90A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 19 Weeks | No SVHC | 4.5Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 310W | 1 | FET General Purpose Power | 19 ns | 140ns | 100 ns | 97 ns | 90A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | TO-247AC | 61 ns | 170A | 680A | 690 mJ | 75V | N-Channel | 7500pF @ 25V | 4 V | 4.5m Ω @ 90A, 10V | 4V @ 250μA | 90A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPW60R099CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r099cpfksa1-datasheets-8233.pdf | TO-247-3 | 3 | 40 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 255W Tc | 31A | 93A | 0.099Ohm | 800 mJ | N-Channel | 2800pF @ 100V | 99m Ω @ 18A, 10V | 3.5V @ 1.2mA | 31A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBG30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfbg30pbf-datasheets-8239.pdf | 1kV | 3.1A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 5Ohm | 3 | Tin | 1 | Single | 125W | 1 | 150°C | TO-220AB | 980pF | 12 ns | 25ns | 20 ns | 89 ns | 3.1A | 20V | 1000V | 2V | 125W Tc | 620 ns | 5Ohm | 1kV | N-Channel | 980pF @ 25V | 4 V | 5Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 80nC @ 10V | 5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STP60NF06L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb60nf06lt4-datasheets-4147.pdf | 60V | 60A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 14mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD, AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP60N | 3 | Single | 110W | 1 | FET General Purpose Power | 35 ns | 220ns | 30 ns | 55 ns | 60A | 15V | SILICON | DRAIN | SWITCHING | 1V | 110W Tc | TO-220AB | 240A | 60V | N-Channel | 2000pF @ 25V | 14m Ω @ 30A, 10V | 1V @ 250μA | 60A Tc | 66nC @ 4.5V | 10V 5V | ±15V | ||||||||||||||||||||||||||||||||||||||
| IXFN200N07 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn200n07-datasheets-8252.pdf | 70V | 200A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 44g | No SVHC | 6mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 60ns | 60 ns | 100 ns | 200A | 20V | 70V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 520W Tc | 250 ns | 600A | 2000 mJ | 70V | N-Channel | 9000pF @ 25V | 4 V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 200A Tc | 480nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTN170P10P | IXYS | $31.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn170p10p-datasheets-8255.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 890W | 1 | FET General Purpose Power | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 890W Tc | 3500 mJ | P-Channel | 12600pF @ 25V | 12m Ω @ 500mA, 10V | 4V @ 1mA | 170A Tc | 240nC @ 10V | 10V | ±20V |
