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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPW65R190C6FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw65r190c6fksa1-datasheets-3876.pdf | TO-247-3 | PG-TO247-3 | 650V | 151W Tc | N-Channel | 1.62pF @ 100V | 190mOhm @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB6670AS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6670as-datasheets-4037.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 62.5W Tc | 62A | 150A | 0.0085Ohm | N-Channel | 1.57pF @ 15V | 8.5m Ω @ 31A, 10V | 3V @ 1mA | 62A Ta | 39nC @ 15V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPW50R199CPFKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw50r199cpfksa1-datasheets-3878.pdf | TO-247-3 | PG-TO247-3 | 550V | 139W Tc | N-Channel | 1.8pF @ 100V | 199mOhm @ 9.9A, 10V | 3.5V @ 660μA | 17A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA14N30 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqa14n30-datasheets-3880.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300V | 300V | 160W Tc | 15A | 60A | 0.29Ohm | 600 mJ | N-Channel | 1.36pF @ 25V | 290m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFR4620TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfr4620trlpbf-datasheets-3882.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.3886mm | 2.52mm | 6.73mm | Lead Free | 2 | 12 Weeks | 78MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 144W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 13.4 ns | 22.4ns | 14.8 ns | 25.4 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 144W Tc | TO-252AA | 200V | N-Channel | 1710pF @ 50V | 78m Ω @ 15A, 10V | 5V @ 100μA | 24A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IPW65R190E6FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw65r190e6fksa1-datasheets-3909.pdf | TO-247-3 | PG-TO247-3 | 650V | 151W Tc | N-Channel | 1.62pF @ 100V | 190mOhm @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R360P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipb60r360p7atma1-datasheets-3827.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 41W Tc | 26A | 0.36Ohm | 27 mJ | N-Channel | 555pF @ 400V | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFH8307TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh8307trpbf-datasheets-3941.pdf | 8-PowerTDFN | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 26 ns | 30ns | 13 ns | 31 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 3.6W Ta 156W Tc | 42A | 400A | 420 mJ | 30V | N-Channel | 7200pF @ 15V | 1.3m Ω @ 50A, 10V | 2.35V @ 150μA | 42A Ta 100A Tc | 120nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| FQB45N15V2TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb45n15v2tm-datasheets-3948.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 45A | 180A | 0.04Ohm | 1124 mJ | N-Channel | 3.03pF @ 25V | 40m Ω @ 22.5A, 10V | 4V @ 250μA | 45A Tc | 94nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FDP040N06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp040n06-datasheets-3950.pdf | TO-220-3 | TO-220-3 | 60V | 231W Tc | N-Channel | 8.235pF @ 25V | 4mOhm @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 133nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDI040N06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdi040n06-datasheets-3963.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 60V | 231W Tc | N-Channel | 8.235pF @ 25V | 4mOhm @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 133nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC118N10NSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc118n10nsgatma1-datasheets-3768.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 114W | 1 | Not Qualified | R-PDSO-F5 | 21 ns | 8 ns | 32 ns | 11A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 114W Tc | N-Channel | 3700pF @ 50V | 11.8m Ω @ 50A, 10V | 4V @ 70μA | 11A Ta 71A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP100N04S2L03AKSA2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp100n04s2l03aksa2-datasheets-4005.pdf | TO-220-3 | PG-TO220-3-1 | 40V | 300W Tc | N-Channel | 6pF @ 25V | 3.3mOhm @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB057N06NATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipb057n06natma1-datasheets-3820.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 83W | 1 | R-PSSO-G2 | 12 ns | 12ns | 7 ns | 20 ns | 45A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3W Ta 83W Tc | 0.0057Ohm | 60 mJ | 60V | N-Channel | 2000pF @ 30V | 5.7m Ω @ 45A, 10V | 2.8V @ 36μA | 17A Ta 45A Tc | 27nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| FDS6572A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds6984s-datasheets-2784.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | EAR99 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | 16A | 0.006Ohm | N-Channel | 5.914pF @ 10V | 6m Ω @ 16A, 4.5V | 1.5V @ 250μA | 16A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IRF7240TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7240trpbf-datasheets-3857.pdf | -40V | -10.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 15mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | 52 ns | 490ns | 97 ns | 210 ns | -10.5A | 20V | SILICON | SWITCHING | 40V | -3V | 2.5W Ta | 65 ns | 43A | -40V | P-Channel | 9250pF @ 25V | 15m Ω @ 10.5A, 10V | 3V @ 250μA | 10.5A Ta | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| RJK0702DPN-E0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk0702dpne0t2-datasheets-3875.pdf | TO-220-3 Full Pack | TO-220FP | 75V | 150W Tc | N-Channel | 10pF @ 10V | 4.8mOhm @ 45A, 10V | 90A Ta | 89nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8442 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb8442-datasheets-3716.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | 40V | 254W Tc | N-Channel | 12.2pF @ 25V | 2.9mOhm @ 80A, 10V | 4V @ 250μA | 28A Ta 80A Tc | 235nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP80N055MDG-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np1100sat3g-datasheets-4295.pdf | TO-220-3 | TO-220 | 55V | 1.8W Ta 115W Tc | N-Channel | 6.9pF @ 25V | 6.9mOhm @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 135nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7854TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf7854trpbf-datasheets-3676.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 30 | 2.5W | 1 | FET General Purpose Power | 9.4 ns | 8.5ns | 8.6 ns | 15 ns | 10A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 79A | 80V | N-Channel | 1620pF @ 25V | 13.4m Ω @ 10A, 10V | 4.9V @ 100μA | 10A Ta | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| RJK0702DPP-E0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk0702dppe0t2-datasheets-3731.pdf | TO-220-3 Full Pack | TO-220FP | 75V | 30W Tc | N-Channel | 6.45pF @ 10V | 4.8mOhm @ 45A, 10V | 90A Ta | 89nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N03S2L06ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd50n03s2l06atma1-datasheets-2914.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 30ns | 15 ns | 40 ns | 50A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 136W Tc | 200A | 0.0092Ohm | 250 mJ | N-Channel | 1900pF @ 25V | 6.4m Ω @ 50A, 10V | 2V @ 85μA | 50A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF3205ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf3205zstrlpbf-datasheets-3665.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 6.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 95ns | 67 ns | 45 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 170W Tc | 440A | 250 mJ | 55V | N-Channel | 3450pF @ 25V | 20 V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| NP80N04PDG-E1B-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np80n04pdge1bay-datasheets-3751.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263-3 | 40V | 1.8W Ta 115W Tc | N-Channel | 6.9pF @ 25V | 4.5mOhm @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 135nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLH5034TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irlh5034trpbf-datasheets-3753.pdf | 8-PowerVDFN | 6.1468mm | 990.6μm | 5.15mm | Lead Free | 5 | 12 Weeks | 3.2MOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 156W | 1 | FET General Purpose Power | R-PDSO-N5 | 21 ns | 54ns | 21 ns | 31 ns | 100A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 156W Tc | 29A | 400A | 360 mJ | 40V | N-Channel | 4730pF @ 25V | 2.4m Ω @ 50A, 10V | 2.5V @ 150μA | 29A Ta 100A Tc | 82nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||
| FDMS2506SDC | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench®, SyncFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdms2506sdc-datasheets-3766.pdf | 8-PowerTDFN | Dual Cool™56 | 25V | 3.3W Ta 89W Tc | N-Channel | 5.945pF @ 13V | 1.45mOhm @ 30A, 10V | 3V @ 1mA | 39A Ta 49A Tc | 93nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF76443P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf76443p3-datasheets-3790.pdf | TO-220-3 | 3 | yes | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 260W Tc | TO-220AB | 75A | 0.01Ohm | N-Channel | 4.115pF @ 25V | 8m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 129nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPC100N04S5L1R9ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipc100n04s5l1r9atma1-datasheets-3792.pdf | 8-PowerTDFN | 3 | 16 Weeks | yes | EAR99 | not_compliant | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 100W Tc | 100A | 400A | 0.0025Ohm | 130 mJ | N-Channel | 4310pF @ 25V | 1.9m Ω @ 50A, 10V | 2V @ 50μA | 100A Tc | 81nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| FQA10N80 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa10n80-datasheets-3846.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 240W Tc | 9.8A | 39.2A | 920 mJ | N-Channel | 2.7pF @ 25V | 1.05 Ω @ 4.9A, 10V | 5V @ 250μA | 9.8A Tc | 71nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| NDB7051 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndb7051-datasheets-3663.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | unknown | e0 | TIN LEAD | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 130W Tc | 70A | 210A | 0.013Ohm | 500 mJ | N-Channel | 1.93pF @ 25V | 13m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 100nC @ 10V | 10V | ±20V |
