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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFH8202TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh8202trpbf-datasheets-3532.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | No SVHC | 8 | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.6W | FET General Purpose Power | 28 ns | 46ns | 19 ns | 30 ns | 100A | 20V | Single | 1.8V | 3.6W Ta 160W Tc | 25V | N-Channel | 7174pF @ 13V | 1.05m Ω @ 50A, 10V | 2.35V @ 150μA | 47A Ta 100A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5015TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfh5015trpbf-datasheets-3605.pdf | 8-PowerTDFN | 6.1468mm | 900μm | 5.15mm | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 1 | 30 | 3.6W | 1 | FET General Purpose Power | 150°C | R-PDSO-N5 | 9.4 ns | 9.7ns | 3.4 ns | 14 ns | 56A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5V | 3.6W Ta 156W Tc | 220A | 230 mJ | 150V | N-Channel | 2300pF @ 50V | 31m Ω @ 34A, 10V | 5V @ 150μA | 10A Ta 56A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| BSC026N02KSGAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc026n02ksgauma1-datasheets-3613.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 78W | 1 | Not Qualified | R-PDSO-F5 | 21 ns | 115ns | 9 ns | 52 ns | 25A | 12V | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 78W Tc | 200A | 0.0045Ohm | 550 mJ | N-Channel | 7800pF @ 10V | 2.6m Ω @ 50A, 4.5V | 1.2V @ 200μA | 25A Ta 100A Tc | 52.7nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||
| FDS7764S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7764s-datasheets-3621.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 13.5A | 0.0075Ohm | N-Channel | 2.8pF @ 15V | 7.5m Ω @ 13.5A, 10V | 2V @ 1mA | 13.5A Ta | 35nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS6162N3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6894a-datasheets-5398.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 3W Ta | 21A | 0.0045Ohm | N-Channel | 5.521pF @ 10V | 4.5m Ω @ 21A, 4.5V | 1.5V @ 250μA | 21A Ta | 73nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SQA442EJ-T1_GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa442ejt1ge3-datasheets-2328.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 60V | 13.6W Tc | N-Channel | 636pF @ 25V | 32mOhm @ 3A, 10V | 2.5V @ 250μA | 9A Tc | 9.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP90N04VDG-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np90n04vdge1ay-datasheets-3627.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 40V | 1.2W Ta 105W Tc | N-Channel | 6.9pF @ 25V | 4mOhm @ 45A, 10V | 2.5V @ 250μA | 90A Tc | 135nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA8N90C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa8n90c-datasheets-3629.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 240W Tc | 8A | 32A | 850 mJ | N-Channel | 2.08pF @ 25V | 1.9 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPN80R600P7ATMA1 | Infineon Technologies | $1.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn80r600p7atma1-datasheets-3631.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 7.4W Tc | 0.6Ohm | N-Channel | 570pF @ 500V | 600m Ω @ 3.4A, 10V | 3.5V @ 170μA | 8A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPW11N60C3FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spw11n60c3fksa1-datasheets-3636.pdf | TO-247-3 | PG-TO247-3 | 650V | 125W Tc | N-Channel | 1.2pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF8N80 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf8n80-datasheets-3653.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 107W Tc | 5.9A | 23.6A | 850 mJ | N-Channel | 2.35pF @ 25V | 1.2 Ω @ 2.95A, 10V | 5V @ 250μA | 5.9A Tc | 57nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| NDB7051 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndb7051-datasheets-3663.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | unknown | e0 | TIN LEAD | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 130W Tc | 70A | 210A | 0.013Ohm | 500 mJ | N-Channel | 1.93pF @ 25V | 13m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSC022N04LS6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-bsc022n04ls6atma1-datasheets-3684.pdf | 8-PowerTDFN | 26 Weeks | 40V | 3W Ta 79W Tc | N-Channel | 1900pF @ 20V | 2.2m Ω @ 50A, 10V | 2.3V @ 250μA | 27A Ta 100A Tc | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R250CP | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw60r250cp-datasheets-3691.pdf | TO-247-3 | PG-TO247-3 | 650V | 104W Tc | N-Channel | 1.2pF @ 100V | 250mOhm @ 7.8A, 10V | 3.5V @ 440μA | 12A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70N10S3L12ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd70n10s3l12atma1-datasheets-3504.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 6ns | 7 ns | 35 ns | 70A | 16V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 125W Tc | 280A | 0.0152Ohm | 410 mJ | N-Channel | 5550pF @ 25V | 11.5m Ω @ 70A, 10V | 2.4V @ 83μA | 70A Tc | 77nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FDA16N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fda16n50-datasheets-3440.pdf | TO-3P-3, SC-65-3 | 3 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 2 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 205W Tc | 16.5A | 66A | 0.38Ohm | 780 mJ | N-Channel | 1.945pF @ 25V | 380m Ω @ 8.3A, 10V | 5V @ 250μA | 16.5A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FQB14N30TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb14n30tm-datasheets-3442.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 3.13W Ta 147W Tc | 14.4A | 57.6A | 0.29Ohm | 600 mJ | N-Channel | 1.36pF @ 25V | 290m Ω @ 7.2A, 10V | 5V @ 250μA | 14.4A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| BSC020N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc020n03msgatma1-datasheets-3258.pdf | 8-PowerTDFN | Contains Lead | 8 | 26 Weeks | 8 | no | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 96W | 1 | Not Qualified | 14ns | 25A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 96W Tc | 400A | 0.0025Ohm | 200 mJ | N-Channel | 9600pF @ 15V | 2m Ω @ 30A, 10V | 2V @ 250μA | 25A Ta 100A Tc | 124nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| 2SK4043LS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4043ls-datasheets-3453.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 30V | 2W Ta 20W Tc | N-Channel | 3000pF @ 20V | 21mOhm @ 10A, 4V | 20A Ta | 37nC @ 4V | 2.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP80N04NHE-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np80n04nhes18ay-datasheets-3455.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 40V | 1.8W Ta 120W Tc | N-Channel | 3.3pF @ 25V | 8mOhm @ 40A, 10V | 4V @ 250μA | 80A Tc | 60nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4070N7 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds6672a-datasheets-2886.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta | 15.3A | 60A | 0.007Ohm | 310 mJ | N-Channel | 2.819pF @ 20V | 7m Ω @ 15.3A, 10V | 5V @ 250μA | 15.3A Ta | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NP90N055VDG-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np90n055vdge1ay-datasheets-3459.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 55V | 1.2W Ta 105W Tc | N-Channel | 6.9pF @ 25V | 6mOhm @ 45A, 10V | 2.5V @ 250μA | 90A Tc | 135nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6668TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6668trpbf-datasheets-3461.pdf | 80V | 55A | DirectFET™ Isometric MZ | 6.35mm | 533.4μm | 5.0546mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | Single | 89W | 1 | FET General Purpose Power | 19 ns | 13ns | 23 ns | 7.1 ns | 55mA | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.8W Ta 89W Tc | 170A | 0.015Ohm | 24 mJ | 80V | N-Channel | 1320pF @ 25V | 15m Ω @ 12A, 10V | 4.9V @ 100μA | 55A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| FDS6064N3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6812a-datasheets-2287.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 3W Ta | 23A | 0.004Ohm | N-Channel | 7.191pF @ 10V | 4m Ω @ 23A, 4.5V | 1.5V @ 250μA | 23A Ta | 98nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD80R1K0CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80r1k0ceatma1-datasheets-3432.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3.949996g | No SVHC | 3 | 1 | Single | 83W | 1 | PG-TO252-3 | 785pF | 25 ns | 15ns | 8 ns | 72 ns | 5.7A | 20V | 800V | 800V | 3V | 83W Tc | 800mOhm | 800V | N-Channel | 785pF @ 100V | 950mOhm @ 3.6A, 10V | 3.9V @ 250μA | 5.7A Tc | 31nC @ 10V | 950 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NP80N055PDG-E1B-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np80n055pdge1bay-datasheets-3493.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | 55V | 1.8W Ta 115W Tc | N-Channel | 6.9pF @ 25V | 6.6mOhm @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 135nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ097N10NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz097n10ns5atma1-datasheets-3470.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N3 | 11 ns | 5ns | 5 ns | 21 ns | 40A | 20V | 100V | SILICON | DRAIN | SWITCHING | 2.1W Ta 69W Tc | 8A | 0.0097Ohm | N-Channel | 2080pF @ 50V | 9.7m Ω @ 20A, 10V | 3.8V @ 36μA | 8A Ta 40A Tc | 28nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AUIRFSL8408 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-auirfsl8408-datasheets-3514.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 40V | 294W Tc | N-Channel | 10.82pF @ 25V | 1.6mOhm @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 324nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD03N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd03n03lag-datasheets-3428.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 115W Tc | TO-252AA | 90A | 360A | 0.0051Ohm | 300 mJ | N-Channel | 5200pF @ 15V | 3.2m Ω @ 60A, 10V | 2V @ 70μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDP5680 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdr8308p-datasheets-2146.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 65W Tc | TO-220AB | 40A | 120A | 0.02Ohm | 90 mJ | N-Channel | 1.85pF @ 25V | 20m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 46nC @ 10V | 6V 10V | ±20V |
