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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPU80R1K2P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu80r1k2p7akma1-datasheets-7907.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 37W Tc | 11A | 10 mJ | N-Channel | 300pF @ 500V | 1.2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4.5A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB160N04S4H1ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipb160n04s4h1atma1-datasheets-7444.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 16 Weeks | 7 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 28 ns | 22ns | 33 ns | 29 ns | 160A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 167W Tc | 640A | 0.0016Ohm | 400 mJ | N-Channel | 10920pF @ 25V | 1.6m Ω @ 100A, 10V | 4V @ 110μA | 160A Tc | 137nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TSM7N90CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm7n90cic0g-datasheets-7917.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | 900V | 40.3W Tc | N-Channel | 1969pF @ 25V | 1.9 Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM160N10CZ C0G | Taiwan Semiconductor Corporation | $2.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm160n10czc0g-datasheets-7920.pdf | TO-220-3 | TO-220 | 100V | 300W Tc | N-Channel | 9840pF @ 30V | 5.5mOhm @ 30A, 10V | 4V @ 250μA | 160A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R3-120PS | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn6r3120ps-datasheets-7923.pdf | TO-220-3 | 3 | 12 Weeks | No SVHC | 3 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 260 | 3 | 30 | 405W | 1 | 42.1 ns | 58.2ns | 67.7 ns | 142.1 ns | 70A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 405W Tc | TO-220AB | 280A | 0.0067Ohm | 120V | N-Channel | 11384pF @ 60V | 6.7m Ω @ 25A, 10V | 4V @ 1mA | 70A Tc | 207.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STB30N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sti30n65m5-datasheets-9729.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 17 Weeks | 139MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE ENERGY RATED | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB30N | 4 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 50 ns | 8ns | 10 ns | 50 ns | 22A | 25V | SILICON | SWITCHING | 140W Tc | 88A | 500 mJ | 650V | N-Channel | 2880pF @ 100V | 139m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 64nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| TSM60N380CZ C0G | Taiwan Semiconductor Corporation | $2.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n380czc0g-datasheets-7932.pdf | TO-220-3 | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 125W Tc | TO-220AB | 11A | 33A | 0.38Ohm | 169 mJ | N-Channel | 1040pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 20.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL3207ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3207ztrrpbf-datasheets-3199.pdf | 75V | 170A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.1MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 300W | 1 | FET General Purpose Power | 20 ns | 68ns | 68 ns | 55 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 300W Tc | 670A | 75V | N-Channel | 6920pF @ 50V | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPA80R310CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa80r310cexksa2-datasheets-7944.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 16.7A | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 51A | 0.31Ohm | 670 mJ | N-Channel | 2320pF @ 100V | 310m Ω @ 11A, 10V | 3.9V @ 1mA | 16.7A Tc | 91nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM80N1R2CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/taiwansemiconductorcorporation-tsm80n1r2cprog-datasheets-7505.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30 Weeks | TO-251 (IPAK) | 800V | 110W Tc | N-Channel | 685pF @ 100V | 1.2Ohm @ 2.75A, 10V | 4V @ 250μA | 5.5A Tc | 19.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL40B212 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl40b212-datasheets-7860.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 12 Weeks | Unknown | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 39 ns | 88 ns | 195A | 20V | 40V | 2.4V | 231W Tc | N-Channel | 8320pF @ 25V | 1.9m Ω @ 100A, 10V | 2.4V @ 150μA | 195A Tc | 137nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP60NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp60nf10-datasheets-7956.pdf | 100V | 80A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 23mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP60N | 3 | Single | 300W | 1 | FET General Purpose Power | 17 ns | 56ns | 23 ns | 82 ns | 40A | 20V | DRAIN | SWITCHING | 3V | 300W Tc | TO-220AB | 485 mJ | 100V | N-Channel | 4270pF @ 25V | 23m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 104nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFBE30LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 8 Weeks | 2.387001g | 3Ohm | 3 | No | 1 | Single | I2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STD5NM60-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std5nm601-datasheets-7777.pdf | 650V | 8A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 26 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 260 | STD5N | 3 | Single | 30 | 96W | 1 | FET General Purpose Power | 14 ns | 10ns | 10 ns | 23 ns | 5A | 30V | SILICON | SWITCHING | 4V | 96W Tc | 5A | 20A | 1Ohm | 200 mJ | 600V | N-Channel | 400pF @ 25V | 1 Ω @ 2.5A, 10V | 5V @ 250μA | 5A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STF18N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf18n65m2-datasheets-7789.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | NOT SPECIFIED | STF18 | NOT SPECIFIED | FET General Purpose Power | 11 ns | 7.5ns | 12.5 ns | 46 ns | 12A | 25V | Single | 650V | 25W Tc | N-Channel | 770pF @ 100V | 330m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 20nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD6N80E-GE3 | Vishay Siliconix | $13.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n80ege3-datasheets-7793.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 800V | 78W Tc | 820mOhm | N-Channel | 827pF @ 100V | 940mOhm @ 3A, 10V | 4V @ 250μA | 5.4A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3205Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3205z-datasheets-7795.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | Single | 170W | 1 | FET General Purpose Power | 18 ns | 95ns | 67 ns | 45 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2V | 170W Tc | TO-220AB | 440A | 0.0065Ohm | 250 mJ | 55V | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFB3307PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineon-irfb3307pbf-datasheets-1268.pdf | 75V | 130A | TO-220-3 | 10.6426mm | 4.82mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 6.3MOhm | 3 | 2.54mm | EAR99 | No | Single | 200W | 1 | FET General Purpose Power | 26 ns | 120ns | 63 ns | 51 ns | 130A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-220AB | 75A | 270 mJ | 75V | N-Channel | 5150pF @ 50V | 4 V | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 130A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIHU6N80E-GE3 | Vishay Siliconix | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu6n80ege3-datasheets-7809.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 18 Weeks | IPAK (TO-251) | 800V | 78W Tc | N-Channel | 827pF @ 100V | 940mOhm @ 3A, 10V | 4V @ 250μA | 5.4A Tc | 44nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N750CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n750chc5g-datasheets-7811.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 36 Weeks | TO-251 (IPAK) | 700V | 62.5W Tc | N-Channel | 555pF @ 100V | 750mOhm @ 1.8A, 10V | 4V @ 250μA | 6A Tc | 10.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R130C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipl65r130c7auma1-datasheets-7820.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | not_compliant | e3 | Tin (Sn) | Halogen Free | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 102W | 1 | 11 ns | 5.3ns | 12 ns | 87 ns | 15A | 20V | 650V | SILICON | DRAIN | SWITCHING | 102W Tc | 75A | 89 mJ | 650V | N-Channel | 1670pF @ 400V | 130m Ω @ 4.4A, 10V | 4V @ 440μA | 15A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STU6N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std6n95k5-datasheets-5012.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | NOT SPECIFIED | STU6N | NOT SPECIFIED | 90W | 1 | FET General Purpose Power | 12 ns | 12ns | 21 ns | 33 ns | 9A | 30V | Single | 90W Tc | 9A | 950V | N-Channel | 450pF @ 100V | 1.25 Ω @ 3A, 10V | 5V @ 100μA | 9A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLR014 | Vishay Siliconix | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | Unknown | 3 | No | Single | D-Pak | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | 60V | 2.5W Ta 25W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 2 V | 200mOhm @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R3-60PLQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn3r360plq-datasheets-7837.pdf | TO-220-3 | 3 | 12 Weeks | 3 | NO | SINGLE | 3 | 293W | 1 | 54.2 ns | 100ns | 109 ns | 158 ns | 130A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 293W Tc | TO-220AB | 60V | N-Channel | 10115pF @ 25V | 3.4m Ω @ 25A, 10V | 2.1V @ 1mA | 130A Tc | 95nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP140N8F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp140n8f7-datasheets-7841.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 15 Weeks | 329.988449mg | 3 | EAR99 | No | STP140 | 1 | Single | 200W | FET General Purpose Power | 26 ns | 51ns | 44 ns | 82 ns | 90A | 20V | 200W Tc | 80V | N-Channel | 6340pF @ 40V | 4.3m Ω @ 45A, 10V | 4.5V @ 250μA | 90A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPAN80R280P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/infineontechnologies-ipan80r280p7xksa1-datasheets-7854.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 30W Tc | TO-220AB | 45A | 0.28Ohm | 43 mJ | N-Channel | 1200pF @ 500V | 280m Ω @ 7.2A, 10V | 3.5V @ 360μA | 17A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STB11NM60T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb11nm60t4-datasheets-7661.pdf | 600V | 11A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | No SVHC | 450MOhm | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB11N | 3 | Single | 30 | 160W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 20ns | 11 ns | 6 ns | 11A | 30V | SILICON | SWITCHING | 650V | 4V | 160W Tc | 44A | 600V | N-Channel | 1000pF @ 25V | 450m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STL16N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl16n65m2-datasheets-7276.pdf | 8-PowerVDFN | Lead Free | 26 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL16 | NOT SPECIFIED | FET General Purpose Power | 7.5A | Single | 650V | 56W Tc | N-Channel | 718pF @ 100V | 395m Ω @ 3.5A, 10V | 4V @ 250μA | 7.5A Tc | 19.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR2905Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-auirfr2905z-datasheets-7653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 26 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 66ns | 35 ns | 31 ns | 59A | 20V | SILICON | DRAIN | SWITCHING | 2V | 110W Tc | TO-252AA | 42A | 240A | 55 mJ | 55V | N-Channel | 1380pF @ 25V | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 42A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTB6410ANT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntp6410ang-datasheets-5723.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 188W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 170ns | 190 ns | 120 ns | 76A | 20V | SILICON | DRAIN | 188W Tc | 500 mJ | 100V | N-Channel | 4500pF @ 25V | 13m Ω @ 76A, 10V | 4V @ 250μA | 76A Tc | 120nC @ 10V | 10V | ±20V |
