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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP165N10F4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp165n10f4-datasheets-8200.pdf | TO-220-3 | Lead Free | 3 | 20 Weeks | 5.5MOhm | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STP165 | 3 | Single | 315W | 1 | FET General Purpose Power | R-PSFM-T3 | 29.6 ns | 62ns | 106 ns | 154 ns | 120A | 20V | SILICON | SWITCHING | 315W Tc | TO-220AB | 480A | 100V | N-Channel | 10500pF @ 25V | 5.5m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STW6N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std6n95k5-datasheets-5012.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | 1.25Ohm | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | SINGLE | STW6N | 3 | 90W | 1 | FET General Purpose Power | R-PSFM-T3 | 12 ns | 12ns | 21 ns | 33 ns | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 90W Tc | 9A | 36A | 90 mJ | 950V | N-Channel | 450pF @ 100V | 1.25 Ω @ 3A, 10V | 5V @ 100μA | 9A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHD4N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd4n80ege3-datasheets-8208.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | D-PAK (TO-252AA) | 800V | 69W Tc | 1.1Ohm | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF15NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi15nm65n-datasheets-5602.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 16 Weeks | No SVHC | 380MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | No | STF15 | Single | 35W | 1 | TO-220FP | 983pF | 55.5 ns | 8ns | 26 ns | 14 ns | 12A | 25V | 650V | 3V | 30W Tc | 270mOhm | 650V | N-Channel | 983pF @ 50V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 33.3nC @ 10V | 380 mΩ | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| RTL035N03TR | ROHM Semiconductor | $0.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rtl035n03tr-datasheets-8220.pdf | 30V | 3.5A | 6-SMD, Flat Leads | 2mm | 770μm | 1.7mm | Lead Free | 6 | 20 Weeks | No SVHC | 79MOhm | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 6 | Single | 10 | 1W | 1 | FET General Purpose Power | 9 ns | 25ns | 20 ns | 32 ns | 3.5A | 12V | SILICON | SWITCHING | 1.5V | 1W Ta | 30V | N-Channel | 350pF @ 10V | 56m Ω @ 3.5A, 4.5V | 1.5V @ 1mA | 3.5A Ta | 6.4nC @ 4.5V | 2.5V 4.5V | ||||||||||||||||||||||||||||||||||||||||
| IPB65R110CFDAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r110cfdafksa1-datasheets-4724.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 18 Weeks | no | HIGH RELIABILITY | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 1 | R-PSSO-G2 | 16 ns | 11ns | 6 ns | 68 ns | 31.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 277.8W Tc | 99.6A | 845 mJ | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| CSD25484F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd25484f4t-datasheets-1458.pdf | 3-XFDFN | 1.035mm | 635μm | Lead Free | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 6 days ago) | yes | 200μm | BOTTOM | NO LEAD | CSD25484 | 3 | Single | 1 | 9.5 ns | 5ns | 8.5 ns | 18 ns | 2.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 500mW Ta | 0.18Ohm | 7.2 pF | P-Channel | 230pF @ 10V | 94m Ω @ 500mA, 8V | 1.2V @ 250μA | 2.5A Ta | 1.42nC @ 4.5V | 1.8V 8V | -12V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN9R1-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn9r130yl115-datasheets-8241.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 52W | 1 | 14 ns | 20ns | 7 ns | 18 ns | 57A | 20V | 30V | SILICON | DRAIN | SWITCHING | 52W Tc | MO-235 | 229A | 0.0136Ohm | 17 mJ | 30V | N-Channel | 894pF @ 15V | 9.1m Ω @ 15A, 10V | 2.15V @ 1mA | 57A Tc | 16.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP18N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18n65m5-datasheets-4903.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 220mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP18N | Single | 110W | 1 | 36 ns | 36 ns | 15A | 25V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-220AB | 60A | 650V | N-Channel | 1240pF @ 100V | 220m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 31nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF15N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf15n60ee3-datasheets-7977.pdf | TO-220-3 Full Pack | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 280mOhm | 3 | yes | No | 1 | Single | 34W | 1 | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | SILICON | SWITCHING | 2V | 34W Tc | TO-220AB | 600V | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP80NF55 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 3 | 12 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | STP80N | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 210W | 55V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 80A | 320A | 0.0065Ohm | 1300 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF150N65F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcpf150n65f-datasheets-8172.pdf | TO-220-3 Full Pack | 12 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 24A | 650V | 5V | 39W Tc | N-Channel | 3737pF @ 100V | 150m Ω @ 12A, 10V | 5V @ 2.4mA | 14.9A Tc | 94nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG25N40D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihg25n40de3-datasheets-8122.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | 3 | 8 Weeks | 38.000013g | Unknown | 3 | AVALANCHE RATED | No | 3 | 1 | Single | 1 | FET General Purpose Power | 21 ns | 57ns | 37 ns | 40 ns | 25A | 30V | SILICON | SWITCHING | 3V | 278W Tc | TO-247AC | 78A | 556 mJ | 400V | N-Channel | 1707pF @ 100V | 170m Ω @ 13A, 10V | 5V @ 250μA | 25A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| STF3NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf3nk100z-datasheets-8187.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STF3N | 3 | Single | 25W | 1 | FET General Purpose Power | 15 ns | 7.5ns | 32 ns | 39 ns | 2.5A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 3.75V | 25W Tc | TO-220AB | 6Ohm | 1kV | N-Channel | 601pF @ 25V | 6 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPP50R199CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r199cpxksa1-datasheets-8108.pdf | TO-220-3 | 3 | 12 Weeks | No SVHC | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 139W | 1 | Not Qualified | 35 ns | 14ns | 10 ns | 80 ns | 17A | 20V | SILICON | ISOLATED | SWITCHING | 550V | 3V | 139W Tc | TO-220AB | 40A | 0.199Ohm | 500V | N-Channel | 1800pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 17A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STF33N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp33n65m2-datasheets-3972.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STF33N | Single | 1 | 13.5 ns | 72.5 ns | 24A | 25V | SILICON | ISOLATED | SWITCHING | 650V | 650V | 34W Tc | TO-220AB | 96A | 0.14Ohm | 780 mJ | N-Channel | 1790pF @ 100V | 140m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 41.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STW10N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf10n105k5-datasheets-5764.pdf | TO-247-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STW10N | NOT SPECIFIED | FET General Purpose Power | 6A | Single | 1050V | 130W Tc | 6A | N-Channel | 545pF @ 100V | 1.3 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 21.5nC @ 10V | 10V | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG25N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg25n40de3-datasheets-8122.pdf | TO-247-3 | 3 | 13 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 21 ns | 57ns | 37 ns | 40 ns | 25A | 30V | SILICON | DRAIN | SWITCHING | 400V | 400V | 278W Tc | TO-247AC | 78A | 556 mJ | N-Channel | 1707pF @ 100V | 170m Ω @ 13A, 10V | 5V @ 250μA | 25A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA11N80E-GE3 | Vishay Siliconix | $12.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha11n80ege3-datasheets-8129.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 800V | 34W Tc | 380mOhm | N-Channel | 1670pF @ 100V | 440mOhm @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP80NF10FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp80nf10fp-datasheets-8145.pdf | 100V | 80A | TO-220-3 Full Pack | 10.4mm | 20mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 15MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP80N | 3 | 1 | Single | 45W | 1 | FET General Purpose Power | 175°C | 40 ns | 80ns | 60 ns | 134 ns | 40A | 20V | SILICON | ISOLATED | SWITCHING | 3V | 45W Tc | TO-220AB | 100V | N-Channel | 4300pF @ 25V | 15m Ω @ 40A, 10V | 4V @ 250μA | 38A Tc | 189nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFSL11N50APBF | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfsl11n50apbf-datasheets-8150.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 3 | 8 Weeks | 2.387001g | 550mOhm | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 1 | R-PSIP-T3 | 14 ns | 34ns | 27 ns | 32 ns | 11A | 30V | SILICON | DRAIN | SWITCHING | 190W Tc | 44A | 390 mJ | 500V | N-Channel | 1426pF @ 25V | 550m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPU80R900P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu80r900p7akma1-datasheets-8154.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 45W Tc | 14A | 0.9Ohm | 13 mJ | N-Channel | 350pF @ 500V | 900m Ω @ 2.2A, 10V | 3.5V @ 110μA | 6A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP11NM60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb11nm60t4-datasheets-7661.pdf | 600V | 11A | TO-220-3 | 31.75mm | 6.35mm | 12.7mm | Lead Free | 3 | 4.535924g | No SVHC | 450mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP11N | 3 | Single | 160W | 1 | FET General Purpose Power | 20 ns | 20ns | 11 ns | 6 ns | 11A | 30V | SILICON | SWITCHING | 650V | 4V | 160W Tc | TO-220AB | 44A | 600V | N-Channel | 1000pF @ 25V | 450m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| IPW60R180C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r180c7xksa1-datasheets-8161.pdf | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 68W Tc | 13A | 45A | 0.18Ohm | 53 mJ | N-Channel | 1080pF @ 400V | 180m Ω @ 5.3A, 10V | 4V @ 260μA | 13A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIB5N65APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfib5n65apbf-datasheets-8166.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 60W | 1 | TO-220-3 | 1.417nF | 14 ns | 20ns | 18 ns | 34 ns | 5.1A | 30V | 650V | 4V | 60W Tc | 930mOhm | N-Channel | 1417pF @ 25V | 930mOhm @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 48nC @ 10V | 930 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R190E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r190e6xksa1-datasheets-8086.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 12 ns | 112 ns | 20.2A | 30V | 650V | SILICON | SWITCHING | 151W Tc | TO-220AB | 66A | 0.19Ohm | 485 mJ | N-Channel | 1620pF @ 100V | 190m Ω @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STW9NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf9nk90z-datasheets-1937.pdf | 900V | 8A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 9.071847g | 1.3Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | STW9N | 3 | Single | 160W | 1 | FET General Purpose Power | 22 ns | 13ns | 28 ns | 55 ns | 8A | 30V | SILICON | SWITCHING | 160W Tc | TO-247AC | 8A | 220 mJ | 900V | N-Channel | 2115pF @ 25V | 1.3 Ω @ 3.6A, 10V | 4.5V @ 100μA | 8A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STP200NF03 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp200nf03-datasheets-8096.pdf | 30V | 120A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | No SVHC | 3.7mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | Tin | No | e3 | STP200 | 3 | Single | 300W | 1 | FET General Purpose Power | 30 ns | 195ns | 60 ns | 75 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-220AB | 480A | 30V | N-Channel | 4950pF @ 25V | 3.6m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TSM70N380CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n380cprog-datasheets-8737.pdf | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 125W Tc | N-Channel | 981pF @ 100V | 380m Ω @ 3.3A, 10V | 4V @ 250μA | 11A Tc | 18.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF7N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw7n95k3-datasheets-2031.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF7N | 3 | Single | 35W | 1 | FET General Purpose Power | 14 ns | 9ns | 23 ns | 36 ns | 7.2A | 30V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 28.8A | 220 mJ | 950V | N-Channel | 1031pF @ 100V | 1.35 Ω @ 3.6A, 10V | 5V @ 100μA | 7.2A Tc | 33nC @ 10V | 10V | ±30V |
