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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP24N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp24n65m2-datasheets-8063.pdf | TO-220-3 | Lead Free | 3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STP24N | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 150W Tc | TO-220AB | 64A | 0.23Ohm | 650 mJ | N-Channel | 1060pF @ 100V | 230m Ω @ 8A, 10V | 4V @ 250μA | 16A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| STFW1N105K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfw1n105k3-datasheets-8066.pdf | ISOWATT218FX | 15.7mm | 26.7mm | 5.7mm | Lead Free | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | STFW | Single | 20W | FET General Purpose Powers | 6 ns | 7ns | 50 ns | 27 ns | 1.4A | 30V | 1050V | 20W Tc | 1.05kV | N-Channel | 180pF @ 100V | 11 Ω @ 600mA, 10V | 4.5V @ 50μA | 1.4A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP40010EL-GE3 | Vishay Siliconix | $9.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40010elge3-datasheets-8071.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | TO-220AB | 120A | 300A | 0.0018Ohm | 320 mJ | N-Channel | 11155pF @ 30V | 1.8m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RCX700N20 | ROHM Semiconductor | $3.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | not_compliant | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 2.23W Ta 40W Tc | TO-220AB | 140A | 0.0427Ohm | 396 mJ | N-Channel | 6900pF @ 25V | 42.7m Ω @ 35A, 10V | 5V @ 1mA | 70A Tc | 125nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R190E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r190e6xksa1-datasheets-8086.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 12 ns | 112 ns | 20.2A | 30V | 650V | SILICON | SWITCHING | 151W Tc | TO-220AB | 66A | 0.19Ohm | 485 mJ | N-Channel | 1620pF @ 100V | 190m Ω @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STW9NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf9nk90z-datasheets-1937.pdf | 900V | 8A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 9.071847g | 1.3Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | STW9N | 3 | Single | 160W | 1 | FET General Purpose Power | 22 ns | 13ns | 28 ns | 55 ns | 8A | 30V | SILICON | SWITCHING | 160W Tc | TO-247AC | 8A | 220 mJ | 900V | N-Channel | 2115pF @ 25V | 1.3 Ω @ 3.6A, 10V | 4.5V @ 100μA | 8A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STP200NF03 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp200nf03-datasheets-8096.pdf | 30V | 120A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | No SVHC | 3.7mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | Tin | No | e3 | STP200 | 3 | Single | 300W | 1 | FET General Purpose Power | 30 ns | 195ns | 60 ns | 75 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-220AB | 480A | 30V | N-Channel | 4950pF @ 25V | 3.6m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TSM70N380CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n380cprog-datasheets-8737.pdf | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 125W Tc | N-Channel | 981pF @ 100V | 380m Ω @ 3.3A, 10V | 4V @ 250μA | 11A Tc | 18.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF7N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw7n95k3-datasheets-2031.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF7N | 3 | Single | 35W | 1 | FET General Purpose Power | 14 ns | 9ns | 23 ns | 36 ns | 7.2A | 30V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 28.8A | 220 mJ | 950V | N-Channel | 1031pF @ 100V | 1.35 Ω @ 3.6A, 10V | 5V @ 100μA | 7.2A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STI33N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp33n65m2-datasheets-3972.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 9.35mm | 4.6mm | 3 | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STI33N | Single | 1 | 13.5 ns | 72.5 ns | 24A | 25V | SILICON | DRAIN | SWITCHING | 650V | 650V | 190W Tc | 96A | 0.14Ohm | 780 mJ | N-Channel | 1790pF @ 100V | 140m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 41.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R0-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn5r0100ps127-datasheets-7963.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 45 ns | 91ns | 63 ns | 122 ns | 120A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | TO-220AB | 680A | 0.005Ohm | 100V | N-Channel | 9900pF @ 50V | 5m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STU2NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp2nk100z-datasheets-3663.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 260 | STU2N | 4 | Single | 70W | 1 | FET General Purpose Power | 7.2 ns | 6.5ns | 32.5 ns | 41.5 ns | 1.85A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 70W Tc | 7.4A | 1kV | N-Channel | 499pF @ 25V | 8.5 Ω @ 900mA, 10V | 4.5V @ 50μA | 1.85A Tc | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STP240N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp240n10f7-datasheets-7972.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 13 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STP240 | Single | 300W | 62 ns | 108ns | 40 ns | 148 ns | 180A | 20V | 300W Tc | 100V | N-Channel | 12600pF @ 25V | 3.2m Ω @ 60A, 10V | 4.5V @ 250μA | 180A Tc | 176nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF15N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf15n60ee3-datasheets-7977.pdf | TO-220-3 Full Pack | Lead Free | 3 | 19 Weeks | Unknown | 280mOhm | 3 | No | 3 | Single | 34W | 1 | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | SILICON | SWITCHING | 2V | 34W Tc | TO-220AB | 600V | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FCP16N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fcpf16n60-datasheets-3449.pdf | 600V | 16A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 43 Weeks | 1.8g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 167W | 1 | 42 ns | 130ns | 90 ns | 165 ns | 16A | 30V | 600V | SILICON | SWITCHING | 167W Tc | TO-220AB | 48A | 0.26Ohm | 450 mJ | 600V | N-Channel | 2250pF @ 25V | 5 V | 260m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STP80NF55-06FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp80nf5506-datasheets-0377.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP80N | 3 | Single | 45W | 1 | FET General Purpose Power | 27 ns | 155ns | 65 ns | 125 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 3V | 45W Tc | TO-220AB | 240A | 0.0065Ohm | 55V | N-Channel | 4400pF @ 25V | 6.5m Ω @ 40A, 10V | 4V @ 250μA | 60A Tc | 189nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| VN2224N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn2224n3g-datasheets-7995.pdf | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | 20 Weeks | 453.59237mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 6 ns | 65 ns | 540mA | 20V | SILICON | SWITCHING | 1W Tc | 0.54A | 240V | N-Channel | 350pF @ 25V | 1.25 Ω @ 2A, 10V | 3V @ 5mA | 540mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP24N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 16 Weeks | NOT SPECIFIED | STP24N | NOT SPECIFIED | 600V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5009FNX | ROHM Semiconductor | $9.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | 3 | 17 Weeks | 3 | No | SINGLE | 1 | FET General Purpose Powers | 24 ns | 20ns | 40 ns | 50 ns | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 50W Tc | TO-220AB | 9A | 0.84Ohm | 5.4 mJ | N-Channel | 630pF @ 25V | 840m Ω @ 4.5A, 10V | 4V @ 1mA | 9A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| TSM80N950CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n950cprog-datasheets-2191.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30 Weeks | TO-251 (IPAK) | 800V | 110W Tc | N-Channel | 691pF @ 100V | 950mOhm @ 3A, 10V | 4V @ 250μA | 6A Tc | 19.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF24N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 16 Weeks | NOT SPECIFIED | STF24 | NOT SPECIFIED | 600V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP30N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp30n10f7-datasheets-8020.pdf | TO-220-3 | Lead Free | 37 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP30N | NOT SPECIFIED | 100V | 50W Tc | N-Channel | 1270pF @ 50V | 24m Ω @ 16A, 10V | 4.5V @ 250μA | 32A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6010ANX | ROHM Semiconductor | $16.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-220-3 Full Pack | 3 | 13 Weeks | 3 | No | SINGLE | 50W | 1 | 25 ns | 30ns | 30 ns | 70 ns | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 40A | 0.56Ohm | 600V | N-Channel | 10A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N380CH C5G | Taiwan Semiconductor Corporation | $6.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n380cprog-datasheets-8737.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 125W Tc | N-Channel | 981pF @ 100V | 380m Ω @ 3.3A, 10V | 4V @ 250μA | 11A Tc | 18.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 3Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STB35N65DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 17 Weeks | NOT SPECIFIED | STB35N | NOT SPECIFIED | 650V | 210W Tc | N-Channel | 2400pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 54nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP15N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp15n60ee3-datasheets-5933.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | Lead Free | 14 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 180W | 1 | TO-220AB | 1.35nF | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | 600V | 2V | 180W Tc | 280mOhm | N-Channel | 1350pF @ 100V | 280mOhm @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 280 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPP80R280P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp80r280p7xksa1-datasheets-7881.pdf | TO-220-3 | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 101W Tc | TO-220AB | 45A | 0.28Ohm | 43 mJ | N-Channel | 1200pF @ 500V | 280m Ω @ 7.2A, 10V | 3.5V @ 360μA | 17A Tc | 36nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SUP50020E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50020ege3-datasheets-7899.pdf | TO-220-3 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 375W Tc | N-Channel | 2.4m Ω @ 30A, 10V | 4V @ 250μA | 120A Tc | 128nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW20N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp20n65m5-datasheets-2124.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 168MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STW20N | Single | 130W | 1 | 43 ns | 7.5ns | 7.5 ns | 43 ns | 18A | 25V | SILICON | DRAIN | SWITCHING | 130W Tc | 72A | 270 mJ | 650V | N-Channel | 1345pF @ 100V | 190m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 45nC @ 10V | 10V | ±25V |
