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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP9NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf9nk90z-datasheets-1937.pdf | 900V | 8A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 1.3Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP9N | 3 | Single | 160W | 1 | FET General Purpose Power | 22 ns | 13ns | 28 ns | 55 ns | 8A | 30V | SILICON | SWITCHING | 3.75V | 160W Tc | TO-220AB | 8A | 220 mJ | 900V | N-Channel | 2115pF @ 25V | 1.3 Ω @ 3.6A, 10V | 4.5V @ 100μA | 8A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STP31N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi31n65m5-datasheets-6407.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 17 Weeks | 148mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP31N | Single | 150W | 1 | FET General Purpose Powers | 46 ns | 46 ns | 22A | 25V | 150W Tc | 650V | N-Channel | 816pF @ 100V | 148m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 45nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM9N90ECI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm9n90ecic0g-datasheets-8050.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | 900V | 89W Tc | N-Channel | 2470pF @ 25V | 1.4 Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP22NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb22nm60n-datasheets-5956.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 16 Weeks | No SVHC | 220mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | Tin | No | STP22N | 125W | 1 | TO-220AB | 1.3nF | 11 ns | 38 ns | 74 ns | 16A | 30V | 600V | 3V | 125W Tc | 200mOhm | N-Channel | 1300pF @ 50V | 220mOhm @ 8A, 10V | 4V @ 100μA | 16A Tc | 44nC @ 10V | 220 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STU85N3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu85n3lh5-datasheets-8058.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | 3 | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STU85 | 3 | Single | 70W | 1 | FET General Purpose Power | 6 ns | 14ns | 10.8 ns | 23.6 ns | 40A | 22V | SILICON | DRAIN | SWITCHING | 2.5V | 70W Tc | 80A | 30V | N-Channel | 1850pF @ 25V | 5.4m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 14nC @ 5V | 5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||||
| STP24N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp24n65m2-datasheets-8063.pdf | TO-220-3 | Lead Free | 3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STP24N | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 150W Tc | TO-220AB | 64A | 0.23Ohm | 650 mJ | N-Channel | 1060pF @ 100V | 230m Ω @ 8A, 10V | 4V @ 250μA | 16A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| STFW1N105K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfw1n105k3-datasheets-8066.pdf | ISOWATT218FX | 15.7mm | 26.7mm | 5.7mm | Lead Free | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | STFW | Single | 20W | FET General Purpose Powers | 6 ns | 7ns | 50 ns | 27 ns | 1.4A | 30V | 1050V | 20W Tc | 1.05kV | N-Channel | 180pF @ 100V | 11 Ω @ 600mA, 10V | 4.5V @ 50μA | 1.4A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP40010EL-GE3 | Vishay Siliconix | $9.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40010elge3-datasheets-8071.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | TO-220AB | 120A | 300A | 0.0018Ohm | 320 mJ | N-Channel | 11155pF @ 30V | 1.8m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RCX700N20 | ROHM Semiconductor | $3.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | not_compliant | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 2.23W Ta 40W Tc | TO-220AB | 140A | 0.0427Ohm | 396 mJ | N-Channel | 6900pF @ 25V | 42.7m Ω @ 35A, 10V | 5V @ 1mA | 70A Tc | 125nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R190E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r190e6xksa1-datasheets-8086.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 12 ns | 112 ns | 20.2A | 30V | 650V | SILICON | SWITCHING | 151W Tc | TO-220AB | 66A | 0.19Ohm | 485 mJ | N-Channel | 1620pF @ 100V | 190m Ω @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STF24N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 16 Weeks | NOT SPECIFIED | STF24 | NOT SPECIFIED | 600V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP30N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp30n10f7-datasheets-8020.pdf | TO-220-3 | Lead Free | 37 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP30N | NOT SPECIFIED | 100V | 50W Tc | N-Channel | 1270pF @ 50V | 24m Ω @ 16A, 10V | 4.5V @ 250μA | 32A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6010ANX | ROHM Semiconductor | $16.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-220-3 Full Pack | 3 | 13 Weeks | 3 | No | SINGLE | 50W | 1 | 25 ns | 30ns | 30 ns | 70 ns | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 40A | 0.56Ohm | 600V | N-Channel | 10A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N380CH C5G | Taiwan Semiconductor Corporation | $6.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n380cprog-datasheets-8737.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 125W Tc | N-Channel | 981pF @ 100V | 380m Ω @ 3.3A, 10V | 4V @ 250μA | 11A Tc | 18.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 3Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STB35N65DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 17 Weeks | NOT SPECIFIED | STB35N | NOT SPECIFIED | 650V | 210W Tc | N-Channel | 2400pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 54nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R0-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn5r0100ps127-datasheets-7963.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 45 ns | 91ns | 63 ns | 122 ns | 120A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | TO-220AB | 680A | 0.005Ohm | 100V | N-Channel | 9900pF @ 50V | 5m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STU2NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp2nk100z-datasheets-3663.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 260 | STU2N | 4 | Single | 70W | 1 | FET General Purpose Power | 7.2 ns | 6.5ns | 32.5 ns | 41.5 ns | 1.85A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 70W Tc | 7.4A | 1kV | N-Channel | 499pF @ 25V | 8.5 Ω @ 900mA, 10V | 4.5V @ 50μA | 1.85A Tc | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP240N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp240n10f7-datasheets-7972.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 13 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STP240 | Single | 300W | 62 ns | 108ns | 40 ns | 148 ns | 180A | 20V | 300W Tc | 100V | N-Channel | 12600pF @ 25V | 3.2m Ω @ 60A, 10V | 4.5V @ 250μA | 180A Tc | 176nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF15N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf15n60ee3-datasheets-7977.pdf | TO-220-3 Full Pack | Lead Free | 3 | 19 Weeks | Unknown | 280mOhm | 3 | No | 3 | Single | 34W | 1 | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | SILICON | SWITCHING | 2V | 34W Tc | TO-220AB | 600V | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FCP16N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fcpf16n60-datasheets-3449.pdf | 600V | 16A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 43 Weeks | 1.8g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 167W | 1 | 42 ns | 130ns | 90 ns | 165 ns | 16A | 30V | 600V | SILICON | SWITCHING | 167W Tc | TO-220AB | 48A | 0.26Ohm | 450 mJ | 600V | N-Channel | 2250pF @ 25V | 5 V | 260m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| STP80NF55-06FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp80nf5506-datasheets-0377.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP80N | 3 | Single | 45W | 1 | FET General Purpose Power | 27 ns | 155ns | 65 ns | 125 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 3V | 45W Tc | TO-220AB | 240A | 0.0065Ohm | 55V | N-Channel | 4400pF @ 25V | 6.5m Ω @ 40A, 10V | 4V @ 250μA | 60A Tc | 189nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| VN2224N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn2224n3g-datasheets-7995.pdf | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | 20 Weeks | 453.59237mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 6 ns | 65 ns | 540mA | 20V | SILICON | SWITCHING | 1W Tc | 0.54A | 240V | N-Channel | 350pF @ 25V | 1.25 Ω @ 2A, 10V | 3V @ 5mA | 540mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STP24N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 16 Weeks | NOT SPECIFIED | STP24N | NOT SPECIFIED | 600V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5009FNX | ROHM Semiconductor | $9.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | 3 | 17 Weeks | 3 | No | SINGLE | 1 | FET General Purpose Powers | 24 ns | 20ns | 40 ns | 50 ns | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 50W Tc | TO-220AB | 9A | 0.84Ohm | 5.4 mJ | N-Channel | 630pF @ 25V | 840m Ω @ 4.5A, 10V | 4V @ 1mA | 9A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| TSM80N950CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n950cprog-datasheets-2191.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30 Weeks | TO-251 (IPAK) | 800V | 110W Tc | N-Channel | 691pF @ 100V | 950mOhm @ 3A, 10V | 4V @ 250μA | 6A Tc | 19.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60N380CZ C0G | Taiwan Semiconductor Corporation | $2.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n380czc0g-datasheets-7932.pdf | TO-220-3 | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 125W Tc | TO-220AB | 11A | 33A | 0.38Ohm | 169 mJ | N-Channel | 1040pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 20.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL3207ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3207ztrrpbf-datasheets-3199.pdf | 75V | 170A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.1MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 300W | 1 | FET General Purpose Power | 20 ns | 68ns | 68 ns | 55 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 300W Tc | 670A | 75V | N-Channel | 6920pF @ 50V | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPA80R310CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa80r310cexksa2-datasheets-7944.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 16.7A | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 51A | 0.31Ohm | 670 mJ | N-Channel | 2320pF @ 100V | 310m Ω @ 11A, 10V | 3.9V @ 1mA | 16.7A Tc | 91nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM80N1R2CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/taiwansemiconductorcorporation-tsm80n1r2cprog-datasheets-7505.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30 Weeks | TO-251 (IPAK) | 800V | 110W Tc | N-Channel | 685pF @ 100V | 1.2Ohm @ 2.75A, 10V | 4V @ 250μA | 5.5A Tc | 19.4nC @ 10V | 10V | ±30V |
