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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STB32NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf32nm50n-datasheets-6674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 26 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB32N | Single | 30 | 190W | 1 | FET General Purpose Power | R-PSSO-G2 | 21.5 ns | 9.5ns | 23.6 ns | 110 ns | 22A | 25V | SILICON | DRAIN | SWITCHING | 190W Tc | 88A | 500V | N-Channel | 1973pF @ 50V | 130m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| TSM3N80CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm3n80chc5g-datasheets-7694.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 20 Weeks | TO-251 (IPAK) | 800V | 94W Tc | N-Channel | 696pF @ 25V | 4.2Ohm @ 1.5A, 10V | 4V @ 250μA | 3A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfz44zpbf-datasheets-9533.pdf | 55V | 51A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.6426mm | 4.83mm | 4.826mm | Lead Free | 3 | 12 Weeks | 13.9MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 80W | 1 | FET General Purpose Power | 14 ns | 68ns | 41 ns | 33 ns | 51A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | 200A | 86 mJ | 55V | N-Channel | 1420pF @ 25V | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PSMN8R5-100PSQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn8r5100psq-datasheets-7711.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | NO | SINGLE | 3 | 263W | 1 | 20 ns | 35ns | 43 ns | 87 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 263W Tc | TO-220AB | 429A | 0.0085Ohm | 100V | N-Channel | 5512pF @ 50V | 8.5m Ω @ 25A, 10V | 4V @ 1mA | 100A Tj | 111nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu9020pbf-datasheets-5922.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 280mOhm | 3 | No | 1 | Single | 42W | 1 | D-Pak | 490pF | 8.2 ns | 67ns | 25 ns | 12 ns | 9.9A | 20V | 50V | -4V | 42W Tc | 280mOhm | P-Channel | 490pF @ 25V | 280mOhm @ 5.7A, 10V | 4V @ 250μA | 9.9A Tc | 14nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFU024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-irfu024pbf-datasheets-7718.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 100mOhm | 3 | EAR99 | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 4V | 2.5W Ta 42W Tc | 56A | N-Channel | 640pF @ 25V | 100m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BUK762R9-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk762r940e118-datasheets-7044.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | 3 | Tin | Single | D2PAK | 6.2nF | 24 ns | 29ns | 32 ns | 54 ns | 100A | 20V | 40V | 40V | 234W Tc | 2.9mOhm | 40V | N-Channel | 6200pF @ 25V | 2.9mOhm @ 25A, 10V | 4V @ 1mA | 100A Tc | 79nC @ 10V | 2.9 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB13NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std13nm60n-datasheets-4858.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 360mOhm | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB13N | 4 | Single | 30 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 3 ns | 8ns | 10 ns | 30 ns | 11A | 25V | SILICON | SWITCHING | 600V | 600V | 3V | 90W Tc | 44A | 200 mJ | N-Channel | 790pF @ 50V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| TSM60NB380CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb380chc5g-datasheets-7754.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 36 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 83W Tc | 9.5A | 28.5A | 0.38Ohm | 64 mJ | N-Channel | 795pF @ 100V | 380m Ω @ 2.85A, 10V | 4V @ 250μA | 9.5A Tc | 19.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD9N60E-GE3 | Vishay Siliconix | $2.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihd9n60ege3-datasheets-7757.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 18 Weeks | 1 | 78W | 150°C | 14 ns | 31 ns | 9A | 30V | 78W Tc | 600V | N-Channel | 778pF @ 100V | 368m Ω @ 4.5A, 10V | 4.5V @ 250μA | 9A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6006ANX | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | 10.3mm | 15.4mm | 4.8mm | Lead Free | 3 | 17 Weeks | 3 | yes | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 260 | 3 | Single | 10 | 40W | 1 | FET General Purpose Power | 22 ns | 18ns | 35 ns | 50 ns | 6A | 30V | SILICON | SWITCHING | 40W Tc | TO-220AB | 6A | 24A | 2.4 mJ | 600V | N-Channel | 520pF @ 25V | 1.2 Ω @ 3A, 10V | 4.5V @ 1mA | 6A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IPP77N06S212AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp77n06s212aksa2-datasheets-7762.pdf | TO-220-3 | 3 | 10 Weeks | yes | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 77A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 158W Tc | TO-220AB | 308A | 0.012Ohm | 280 mJ | N-Channel | 1770pF @ 25V | 12m Ω @ 38A, 10V | 4V @ 93μA | 77A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR2905Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-auirfr2905z-datasheets-7653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 26 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 66ns | 35 ns | 31 ns | 59A | 20V | SILICON | DRAIN | SWITCHING | 2V | 110W Tc | TO-252AA | 42A | 240A | 55 mJ | 55V | N-Channel | 1380pF @ 25V | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 42A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STD2NK90Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp2nk90z-datasheets-1879.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 12 Weeks | No SVHC | 6.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | 260 | STD2N | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | 21 ns | 11ns | 40 ns | 43 ns | 2.1A | 30V | SILICON | SWITCHING | 3.75V | 70W Tc | 8.4A | 900V | N-Channel | 485pF @ 25V | 6.5 Ω @ 1.05A, 10V | 4.5V @ 50μA | 2.1A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHU2N80E-GE3 | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu2n80ege3-datasheets-7575.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 9.78mm | 18 Weeks | 1 | 62.5W | 150°C | IPAK (TO-251) | 11 ns | 19 ns | 2.8A | 30V | 800V | 62.5W Tc | 2.38Ohm | 800V | N-Channel | 315pF @ 100V | 2.75Ohm @ 1A, 10V | 4V @ 250μA | 2.8A Tc | 19.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R7-80PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn8r780ps127-datasheets-7577.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 170W | 1 | 21 ns | 26ns | 20 ns | 46 ns | 90A | 20V | 80V | SILICON | DRAIN | SWITCHING | 170W Tc | TO-220AB | 0.0087Ohm | 80V | N-Channel | 3346pF @ 40V | 8.7m Ω @ 10A, 10V | 4V @ 1mA | 90A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STU9N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu9n60m2-datasheets-7583.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 26 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STU9N | Single | 60W | 1 | 8.8 ns | 7.5ns | 13.5 ns | 22 ns | 5.5A | 25V | 600V | 60W Tc | 650V | N-Channel | 320pF @ 100V | 780m Ω @ 3A, 10V | 4V @ 250μA | 5.5A Tc | 10nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU420APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfr420apbf-datasheets-7258.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | 3 | 12 Weeks | 329.988449mg | Unknown | 3 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 83W | 1 | 8.1 ns | 12ns | 13 ns | 16 ns | 3.3A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 4.5V | 83W Tc | 3Ohm | N-Channel | 340pF @ 25V | 4.5 V | 3 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3.3A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| BUK7635-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk7635100a118-datasheets-6800.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 149W | 1 | R-PSSO-G2 | 15 ns | 67ns | 35 ns | 56 ns | 41A | 20V | 100V | SILICON | DRAIN | SWITCHING | 149W Tc | 165A | 110 mJ | 100V | N-Channel | 2535pF @ 25V | 35m Ω @ 25A, 10V | 4V @ 1mA | 41A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| RCD080N25TL | ROHM Semiconductor | $0.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/rohm-rcd080n25tl-datasheets-1187.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7mm | 2.5mm | 5.8mm | 2 | 10 Weeks | 3 | EAR99 | No | e2 | Tin/Copper (Sn98Cu2) | GULL WING | 3 | Single | 20W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 40ns | 15 ns | 40 ns | 8A | 30V | SILICON | SWITCHING | 850mW Ta 20W Tc | 8A | 4.67 mJ | 250V | N-Channel | 1440pF @ 25V | 300m Ω @ 4A, 10V | 5V @ 1mA | 8A Ta | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TSM60NB600CF C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb600cfc0g-datasheets-7618.pdf | TO-220-3 Full Pack | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 41.7W Tc | N-Channel | 528pF @ 100V | 600m Ω @ 1.7A, 10V | 4V @ 250μA | 8A Tc | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ24LPBF | Vishay Siliconix | $3.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz24lpbf-datasheets-7621.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 11 ns | 110ns | 41 ns | 23 ns | 17A | 10V | SILICON | DRAIN | SWITCHING | 3.7W Ta 60W Tc | 68A | 60V | N-Channel | 870pF @ 25V | 100m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 18nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| SIHD6N62E-GE3 | Vishay Siliconix | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n62et1ge3-datasheets-6795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | D-PAK (TO-252AA) | 578pF | 12 ns | 10ns | 16 ns | 22 ns | 6A | 20V | 620V | 78W Tc | 900mOhm | N-Channel | 578pF @ 100V | 900mOhm @ 3A, 10V | 4V @ 250μA | 6A Tc | 34nC @ 10V | 900 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP4NK60ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp4nk60z-datasheets-1747.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP4N | 3 | Single | 25W | 1 | FET General Purpose Power | 12 ns | 9.5ns | 16.5 ns | 29 ns | 4A | 30V | 600V | SILICON | ISOLATED | SWITCHING | 3.75V | 25W Tc | TO-220AB | 4A | 600V | N-Channel | 510pF @ 25V | 3.75 V | 2 Ω @ 2A, 10V | 4.5V @ 50μA | 4A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STD3NK80Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf3nk80z-datasheets-2747.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | STD3N | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | 17 ns | 27ns | 40 ns | 36 ns | 1.25A | 30V | SILICON | SWITCHING | 3.75V | 70W Tc | 2.5A | 800V | N-Channel | 485pF @ 25V | 4.5 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP9NK70Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nk70z-datasheets-7643.pdf | 700V | 7.5A | TO-220-3 | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP9N | 3 | Single | 115W | 1 | FET General Purpose Power | 22 ns | 17ns | 13 ns | 45 ns | 4A | 30V | SILICON | SWITCHING | 3.75V | 115W Tc | TO-220AB | 700V | N-Channel | 1370pF @ 25V | 1.2 Ω @ 4A, 10V | 4.5V @ 100μA | 7.5A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| PSMN4R4-80BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn4r480bs118-datasheets-7592.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 34.7 ns | 38.1ns | 18.4 ns | 66 ns | 100A | 20V | 80V | SILICON | DRAIN | SWITCHING | 306W Tc | 680A | 0.0045Ohm | 80V | N-Channel | 8400pF @ 40V | 4.5m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHD12N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TA | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd12n50ege3-datasheets-7651.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | 1.437803g | Unknown | 3 | YES | GULL WING | 1 | 1 | R-PSSO-G2 | 10.5A | SILICON | DRAIN | SWITCHING | 550V | 500V | 4V | 114W Tc | N-Channel | 886pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 10.5A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR224PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 250V | 2.5W Ta 42W Tc | 400 ns | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 4 V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STP200N3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp200n3ll-datasheets-7494.pdf | TO-220-3 | Lead Free | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STP200 | NOT SPECIFIED | 30V | 176.5W Tc | N-Channel | 5200pF @ 25V | 2.4m Ω @ 60A, 10V | 2.5V @ 250μA | 120A Tc | 53nC @ 4.5V | 4.5V 10V | ±20V |
