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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFZ14SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfz14spbf-datasheets-7501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | 60V | 3.7W Ta 43W Tc | 200mOhm | 60V | N-Channel | 300pF @ 25V | 200mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2N100CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2n100chc5g-datasheets-7516.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 30 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 77W Tc | 1.85A | 7.4A | 20 mJ | N-Channel | 625pF @ 25V | 8.5 Ω @ 900mA, 10V | 5.5V @ 250μA | 1.85A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK964R2-80E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk964r280e118-datasheets-7519.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 357W | 1 | R-PSSO-G2 | 70 ns | 109ns | 115 ns | 203 ns | 120A | 15V | 80V | SILICON | DRAIN | SWITCHING | 349W Tc | 740A | 0.0042Ohm | 485 mJ | 80V | N-Channel | 17130pF @ 25V | 4m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 123nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R5-40PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn4r540ps127-datasheets-7524.pdf | TO-220-3 | 31.75mm | 6.35mm | 6.35mm | Lead Free | 3 | 12 Weeks | 13.607771g | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 148W | 1 | 19 ns | 23ns | 9 ns | 30 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 148W Tc | TO-220AB | 545A | 0.0046Ohm | 40V | N-Channel | 2683pF @ 12V | 4.6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 42.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TSM80N1R2CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n1r2cprog-datasheets-7505.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30 Weeks | NOT SPECIFIED | NOT SPECIFIED | 800V | 110W Tc | N-Channel | 685pF @ 100V | 1.2 Ω @ 2.75A, 10V | 4V @ 250μA | 5.5A Tc | 19.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF2N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std2n80k5-datasheets-6794.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | STF2N | Single | 20W | 1 | 8 ns | 19 ns | 2A | 30V | SILICON | ISOLATED | SWITCHING | 20W Tc | TO-220AB | 2A | 8A | 60.5 mJ | 800V | N-Channel | 95pF @ 100V | 4.5 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 3nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STF7N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf7n60m2-datasheets-7538.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | STF7N | 1 | Single | 7.6 ns | 7.2ns | 15.9 ns | 19.3 ns | 5A | 25V | 600V | 20W Tc | N-Channel | 271pF @ 100V | 950m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 8.8nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP5NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp5nk50zfp-datasheets-8885.pdf | 500V | 4.4A | TO-220-3 | Lead Free | 3 | 12 Weeks | No SVHC | 1.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP5N | 3 | Single | 70W | 1 | FET General Purpose Power | 15 ns | 10ns | 15 ns | 32 ns | 4.4A | 30V | SILICON | SWITCHING | 3.75V | 70W Tc | TO-220AB | 310 ns | 500V | N-Channel | 535pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 28nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| BUK664R4-55C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk664r455c118-datasheets-6940.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 204W | 1 | R-PSSO-G2 | 25 ns | 65ns | 116 ns | 252 ns | 100A | 16V | 55V | SILICON | DRAIN | SWITCHING | 204W Tc | 550A | 0.0077Ohm | 55V | N-Channel | 7750pF @ 25V | 4.9m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 124nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU1N60APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | 3 | 8 Weeks | 329.988449mg | Unknown | 3 | No | 260 | 3 | 1 | Single | 40 | 36W | 1 | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 4V | 36W Tc | 5.6A | 7Ohm | 600V | N-Channel | 229pF @ 25V | 7 Ω @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| STL25N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl25n60m2ep-datasheets-7552.pdf | 8-PowerVDFN | 12 Weeks | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | STL25 | 16A | 600V | 125W Tc | N-Channel | 1090pF @ 100V | 205m Ω @ 8A, 10V | 4.75V @ 250μA | 16A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR224PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 250V | 2.5W Ta 42W Tc | 400 ns | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 4 V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP200N3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp200n3ll-datasheets-7494.pdf | TO-220-3 | Lead Free | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STP200 | NOT SPECIFIED | 30V | 176.5W Tc | N-Channel | 5200pF @ 25V | 2.4m Ω @ 60A, 10V | 2.5V @ 250μA | 120A Tc | 53nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB900CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb900chc5g-datasheets-7345.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 36 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 36.8W Tc | 4A | 12A | 0.9Ohm | 42.3 mJ | N-Channel | 315pF @ 100V | 900m Ω @ 1.2A, 10V | 4V @ 250μA | 4A Tc | 9.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK763R1-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk763r160e118-datasheets-7381.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | Tin | No | D2PAK | 8.92nF | 28 ns | 45ns | 49 ns | 68 ns | 120A | 20V | 60V | 60V | 293W Tc | N-Channel | 8920pF @ 25V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 120A Tc | 114nC @ 10V | 3.1 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK661R9-40C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk661r940c118-datasheets-7367.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | Tin | No | e3 | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 60 ns | 140ns | 416 ns | 234 ns | 120A | 16V | 40V | SILICON | DRAIN | SWITCHING | 306W Tc | 40V | N-Channel | 15100pF @ 25V | 1.9m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 260nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PHP29N08T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-php29n08t127-datasheets-7390.pdf | TO-220-3 | 3 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 88W | 1 | 9.5 ns | 70ns | 9 ns | 15 ns | 27A | 30V | 75V | SILICON | DRAIN | SWITCHING | 88W Tc | 108A | 0.05Ohm | 75V | N-Channel | 810pF @ 25V | 50m Ω @ 14A, 11V | 5V @ 2mA | 27A Tc | 19nC @ 10V | 11V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R285P7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r285p7auma1-datasheets-7341.pdf | 4-PowerTSFN | 4 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 59W Tc | 36A | 0.285Ohm | 38 mJ | N-Channel | 761pF @ 400V | 285m Ω @ 3.8A, 10V | 4V @ 190μA | 13A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL86566-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl86566f085-datasheets-7372.pdf | 8-PowerSFN | 16 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | Single | 240A | 60V | 300W Tj | N-Channel | 6655pF @ 30V | 2.4m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB900CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb900cprog-datasheets-6313.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 36 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 36.8W Tc | 4A | 12A | 0.9Ohm | 42.3 mJ | N-Channel | 315pF @ 100V | 900m Ω @ 1.2A, 10V | 4V @ 250μA | 4A Tc | 9.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9609-40B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk960940b118-datasheets-6624.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 157W | 1 | R-PSSO-G2 | 29 ns | 106ns | 89 ns | 108 ns | 95A | 15V | 40V | SILICON | DRAIN | SWITCHING | 157W Tc | 75A | 0.01Ohm | 241 mJ | 40V | N-Channel | 3600pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 32nC @ 5V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| STP20NF06L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount, Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp20nf06l-datasheets-7440.pdf | 60V | 20A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | No SVHC | 70mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP20N | 3 | Single | 60W | 1 | FET General Purpose Power | 12 ns | 30ns | 6 ns | 20 ns | 10A | 18V | SILICON | SWITCHING | 3V | 60W Tc | TO-220AB | 80A | 60V | N-Channel | 400pF @ 25V | 70m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 7.5nC @ 10V | 5V 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||
| BSB015N04NX3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsb015n04nx3gxuma1-datasheets-7451.pdf | 3-WDSON | Lead Free | 3 | 26 Weeks | yes | EAR99 | Silver | 8541.29.00.95 | e4 | Halogen Free | BOTTOM | NO LEAD | 3 | 1 | Not Qualified | R-MBCC-N3 | 6.4ns | 35A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 180A | 400A | 0.0015Ohm | 290 mJ | N-Channel | 12000pF @ 20V | 1.5m Ω @ 30A, 10V | 4V @ 250μA | 36A Ta 180A Tc | 142nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHD2N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihd2n80ege3-datasheets-7474.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 14 Weeks | 1 | 62.5W | 150°C | 11 ns | 19 ns | 2.8A | 30V | 62.5W Tc | 800V | N-Channel | 315pF @ 100V | 2.75 Ω @ 1A, 10V | 4V @ 250μA | 2.8A Tc | 19.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL22N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl22n65m5-datasheets-7476.pdf | 8-PowerVDFN | 8mm | 950μm | 8mm | Lead Free | 12 Weeks | 210MOhm | 5 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STL22 | Single | 110W | 43 ns | 7.5ns | 7.5 ns | 43 ns | 15A | 20V | 2.8W Ta 110W Tc | 650V | N-Channel | 1345pF @ 100V | 210m Ω @ 8.5A, 10V | 5V @ 250μA | 15A Tc | 36nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1N60APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 7Ohm | 3 | No | 18A | 650V | 1 | Single | 36W | 1 | D-Pak | 229pF | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | 600V | 600V | 36W Tc | 440 ns | 7Ohm | 600V | N-Channel | 229pF @ 25V | 4 V | 7Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 7 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STP3NK90ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp3nk90zfp-datasheets-7316.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 245 | STP3N | 3 | Single | 25W | 1 | FET General Purpose Power | 18 ns | 7ns | 18 ns | 45 ns | 3A | 30V | SILICON | ISOLATED | SWITCHING | 900V | 900V | 3.75V | 25W Tc | TO-220AB | 3A | N-Channel | 590pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 22.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| BUK964R4-40B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk964r440b118-datasheets-7186.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 254W | 1 | R-PSSO-G2 | 44 ns | 118ns | 132 ns | 197 ns | 174A | 15V | 40V | SILICON | DRAIN | SWITCHING | 254W Tc | 75A | 697A | 0.0044Ohm | 40V | N-Channel | 7124pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 64nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||
| STD120N4LF6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std120n4lf6-datasheets-7180.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 4MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD12 | 3 | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 95ns | 45 ns | 125 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 1V | 110W Tc | 40V | N-Channel | 4300pF @ 25V | 4m Ω @ 40A, 10V | 3V @ 250μA | 80A Tc | 80nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPS80R1K2P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ips80r1k2p7akma1-datasheets-7197.pdf | TO-251-3 Stub Leads, IPak | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 37W Tc | 11A | 10 mJ | N-Channel | 300pF @ 500V | 1.2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4.5A Tc | 11nC @ 10V | 10V | ±20V |
