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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMNH6012LK3Q-13 | Diodes Incorporated | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh6012lk3q13-datasheets-6373.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 17 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2W Ta | 120A | 0.018Ohm | 100 mJ | N-Channel | 1926pF @ 30V | 12m Ω @ 25A, 10V | 3V @ 250μA | 80A Tc | 35.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM026NA03CR RLG | Taiwan Semiconductor Corporation | $3.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm026na03crrlg-datasheets-6328.pdf | 8-PowerTDFN | 28 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 125W Tc | N-Channel | 2540pF @ 15V | 2.6m Ω @ 24A, 10V | 2.5V @ 250μA | 168A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN027-100BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn027100bs118-datasheets-6526.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 14.4 ns | 11.4ns | 8.9 ns | 29.6 ns | 37A | 4.9V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 103W Tc | 148A | 0.0268Ohm | 59 mJ | 100V | N-Channel | 1624pF @ 50V | 26.8m Ω @ 15A, 10V | 4V @ 1mA | 37A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDD3690 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd3690-datasheets-6547.pdf | 100V | 22A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 260.37mg | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | GULL WING | Single | 60W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 6.5ns | 10 ns | 29 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 60W Tc | 75A | 0.064Ohm | 100V | N-Channel | 1514pF @ 50V | 64m Ω @ 5.4A, 10V | 4V @ 250μA | 22A Tc | 39nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK7613-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk761360e118-datasheets-6537.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 10.8 ns | 9.2ns | 9.8 ns | 21.9 ns | 58A | 20V | 60V | SILICON | DRAIN | SWITCHING | 96W Tc | 60V | N-Channel | 1730pF @ 25V | 13m Ω @ 15A, 10V | 4V @ 1mA | 58A Tc | 22.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AOD7S65 | Alpha & Omega Semiconductor Inc. | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aod7s65-datasheets-0931.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 7A | 650V | 89W Tc | N-Channel | 434pF @ 100V | 650m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 9.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R5-25YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn1r525yl115-datasheets-6564.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 12 Weeks | 453.59237mg | 4 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 109W | 1 | 50 ns | 97ns | 36 ns | 72 ns | 100A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 109W Tc | MO-235 | 0.0022Ohm | 290 mJ | 25V | N-Channel | 4830pF @ 12V | 1.5m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 76nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQD50N04-5M6_T4GE3 | Vishay Siliconix | $1.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n045m6ge3-datasheets-3962.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 1 | Single | TO-252AA | 9 ns | 19ns | 5 ns | 13 ns | 50A | 20V | 40V | 71W Tc | 5.6mOhm | N-Channel | 4000pF @ 25V | 5.6mOhm @ 20A, 10V | 3.5V @ 250μA | 50A Tc | 85nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD60NF55LAT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std60nf55lat4-datasheets-6612.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 260 | STD60N | 3 | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 180ns | 35 ns | 80 ns | 60A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 110W Tc | 240A | 400 mJ | N-Channel | 1950pF @ 25V | 15m Ω @ 30A, 10V | 2V @ 250μA | 60A Tc | 40nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||
| STD3NK50Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std3nk50z1-datasheets-6661.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | No SVHC | 3 | NRND (Last Updated: 8 months ago) | No | e3 | Matte Tin (Sn) | 260 | STD3N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | 8 ns | 13ns | 14 ns | 24 ns | 1.15A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | 9.2A | 500V | N-Channel | 280pF @ 25V | 3.75 V | 3.3 Ω @ 1.15A, 10V | 4.5V @ 50μA | 2.3A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPSA70R900P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipsa70r900p7sakma1-datasheets-6663.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 30.5W Tc | 12.8A | 0.9Ohm | N-Channel | 211pF @ 400V | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 6A Tc | 6.8nC @ 400V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB600CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm60nb600cprog-datasheets-6666.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 36 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 63W Tc | 7A | 21A | 0.6Ohm | 36 mJ | N-Channel | 516pF @ 100V | 600m Ω @ 2.1A, 10V | 4V @ 250μA | 7A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS70R2K0CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips70r2k0ceakma1-datasheets-6669.pdf | TO-251-3 Stub Leads, IPak | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 42W Tc | 6.3A | 2Ohm | 11 mJ | N-Channel | 163pF @ 100V | 2 Ω @ 1A, 10V | 3.5V @ 70μA | 4A Tc | 7.8nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPH7R506NH,L1Q | Toshiba Semiconductor and Storage | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshiba-tph7r506nhl1q-datasheets-0911.pdf | 8-PowerVDFN | 5 | 12 Weeks | 8 | unknown | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.6W Ta 45W Tc | 55A | 66A | 0.019Ohm | 132 mJ | N-Channel | 2320pF @ 30V | 7.5m Ω @ 11A, 10V | 4V @ 300μA | 22A Ta | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PHB27NQ10T,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/nexperiausainc-phb27nq10t118-datasheets-6469.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | No | 107W | D2PAK | 1.24nF | 12 ns | 43ns | 24 ns | 32 ns | 28A | 20V | 100V | 100V | 107W Tc | 50mOhm | 100V | N-Channel | 1240pF @ 25V | 50mOhm @ 14A, 10V | 4V @ 1mA | 28A Tc | 30nC @ 10V | 50 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7635-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk763555a118-datasheets-6181.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 85W | 1 | R-PSSO-G2 | 10 ns | 62ns | 20 ns | 24 ns | 35A | 20V | 55V | SILICON | DRAIN | SWITCHING | 85W Tc | 49 mJ | 55V | N-Channel | 872pF @ 25V | 35m Ω @ 20A, 10V | 4V @ 1mA | 35A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTMFS4821NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntmfs4821nt1g-datasheets-5788.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 2 Weeks | 10.8MOhm | 5 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | Single | 38.5W | 1 | FET General Purpose Power | 13.3 ns | 38ns | 3.8 ns | 16.6 ns | 58.5A | 16V | SILICON | DRAIN | SWITCHING | 870mW Ta 38.5W Tc | 30V | N-Channel | 1400pF @ 12V | 6.95m Ω @ 30A, 10V | 2.5V @ 250μA | 8.8A Ta 58.5A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RQ1E070RPTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-rq1e070rptr-datasheets-6196.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 20 Weeks | 8 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 8 | 1 | 10 | 1 | Other Transistors | 16 ns | 35ns | 70 ns | 140 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 550mW Ta | 7A | -30V | P-Channel | 2700pF @ 10V | 17m Ω @ 7A, 10V | 2.5V @ 1mA | 7A Ta | 26nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN1R7-25YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn1r725yldx-datasheets-6102.pdf | SC-100, SOT-669 | 4 | 12 Weeks | HIGH RELIABILITY | IEC-60134 | SINGLE | GULL WING | 4 | 1 | R-PSSO-G4 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 135W Tc | MO-235 | 860A | 0.00242Ohm | 746 mJ | N-Channel | 3415pF @ 12V | 1.7m Ω @ 25A, 10V | 2.2V @ 1mA | 100A Tc | 46.7nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TSM055N03EPQ56 RLG | Taiwan Semiconductor Corporation | $1.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm055n03epq56rlg-datasheets-5796.pdf | 8-PowerTDFN | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 74W Tc | N-Channel | 1210pF @ 25V | 5.5m Ω @ 20A, 10V | 2.5V @ 250μA | 80A Tc | 11.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK626R2-40C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk626r240c118-datasheets-6110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 128W | 1 | R-PSSO-G2 | 16.7 ns | 48.6ns | 17 ns | 124 ns | 90A | 16V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 128W Tc | N-Channel | 3720pF @ 25V | 6.2m Ω @ 15A, 10V | 2.8V @ 1mA | 90A Tc | 67nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| DMTH6005LK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth6005lk3q13-datasheets-6310.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.1W Ta 100W Tc | 150A | 0.0056Ohm | 98 mJ | N-Channel | 2962pF @ 30V | 5.6m Ω @ 50A, 10V | 3V @ 250μA | 90A Tc | 47.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK7660-100A,118 | Nexperia USA Inc. | $6.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7660100a118-datasheets-6274.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 106W | 1 | R-PSSO-G2 | 10 ns | 45ns | 20 ns | 31 ns | 26A | 20V | 100V | SILICON | DRAIN | SWITCHING | 106W Tc | 106A | 0.06Ohm | 110 mJ | 100V | N-Channel | 1377pF @ 25V | 60m Ω @ 15A, 10V | 4V @ 1mA | 26A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSO130P03SHXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-bso130p03shxuma1-datasheets-6278.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 8 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.56W | 1 | Not Qualified | 16ns | 9.2A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 1.56W Ta | P-Channel | 3520pF @ 25V | 13m Ω @ 11.7A, 10V | 2.2V @ 140μA | 9.2A Ta | 81nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMS7570S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms7570s-datasheets-6283.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 10 Weeks | 90mg | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 14 ns | 5.9ns | 4 ns | 34 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 83W Tc | MO-240AA | 25V | N-Channel | 4515pF @ 13V | 1.7 V | 1.95m Ω @ 28A, 10V | 3V @ 1mA | 28A Ta 49A Tc | 69nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TSM650N15CS RLG | Taiwan Semiconductor Corporation | $11.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm650n15csrlg-datasheets-6384.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 12.5W Tc | 4A | 36A | 0.08Ohm | 60 mJ | N-Channel | 1783pF @ 75V | 65m Ω @ 4A, 10V | 4V @ 250μA | 9A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R4-30BL,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn3r430bl118-datasheets-6387.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 114W | 1 | R-PSSO-G2 | 40 ns | 73ns | 28 ns | 59 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 114W Tc | 609A | 200 mJ | 30V | N-Channel | 3907pF @ 15V | 3.3m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STD4NK60ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk60zt4-datasheets-6401.pdf | 600V | 4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | GULL WING | 260 | STD4N | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 9.5ns | 16.5 ns | 29 ns | 4A | 30V | SILICON | SWITCHING | 2.3V | 70W Tc | TO-252AA | 4A | 600V | N-Channel | 510pF @ 25V | 2 Ω @ 2A, 10V | 4.5V @ 50μA | 4A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| BUK7210-55B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~185°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | /files/nexperiausainc-buk721055b118-datasheets-6125.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | 3 | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 167W | 1 | R-PSSO-G2 | 18 ns | 91ns | 45 ns | 48 ns | 75A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | N-Channel | 2453pF @ 25V | 10m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TSM9409CS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm9409csrlg-datasheets-6013.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 60V | 3W Ta | P-Channel | 540pF @ 30V | 155m Ω @ 3.5A, 10V | 1V @ 250μA | 3.5A Ta | 6nC @ 10V | 4.5V 10V | ±20V |
