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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDS4470 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds4470-datasheets-6950.pdf | 40V | 12.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 9MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 14 ns | 12ns | 29 ns | 37 ns | 12.5A | 30V | SILICON | SWITCHING | 3.9V | 2.5W Ta | 50A | 370 mJ | 40V | N-Channel | 2659pF @ 20V | 9m Ω @ 12.5A, 10V | 5V @ 250μA | 12.5A Ta | 63nC @ 10V | 10V | +30V, -20V | |||||||||||||||||||||||||||||||||||
| IPU80R3K3P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu80r3k3p7akma1-datasheets-6963.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 18W Tc | 3.8A | 2 mJ | N-Channel | 120pF @ 500V | 3.3 Ω @ 590mA, 10V | 3.5V @ 30μA | 1.9A Tc | 5.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4NB65CH C5G | Taiwan Semiconductor Corporation | $6.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4nb65chc5g-datasheets-6986.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 32 Weeks | TO-251 (IPAK) | 650V | 70W Tc | N-Channel | 549pF @ 25V | 3.37Ohm @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 13.46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS70R950CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ips70r950ceakma1-datasheets-6992.pdf | TO-251-3 Stub Leads, IPak | Contains Lead | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | 1 | R-PSIP-T3 | 7.4A | 700V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 68W Tc | 12A | 0.95Ohm | 50 mJ | N-Channel | 328pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 150μA | 7.4A Tc | 15.3nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STD11N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std11n65m5-datasheets-6999.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | 480MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | GULL WING | STD11 | Single | 85W | 1 | R-PSSO-G2 | 23 ns | 23 ns | 9A | 25V | SILICON | SWITCHING | 85W Tc | 9A | 650V | N-Channel | 620pF @ 100V | 480m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R4-30BLE,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn3r430ble118-datasheets-7015.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | not_compliant | e3 | Tin (Sn) | IEC-60134 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 178W Tc | 120A | 672A | 0.005Ohm | 246 mJ | N-Channel | 4682pF @ 15V | 3.4m Ω @ 25A, 10V | 2.15V @ 1mA | 120A Tc | 81nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPSA70R750P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipsa70r750p7sakma1-datasheets-7027.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 34.7W Tc | 15.4A | 0.75Ohm | N-Channel | 306pF @ 400V | 750m Ω @ 1.4A, 10V | 3.5V @ 70μA | 6.5A Tc | 8.3nC @ 400V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD40NF03LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 30V | 40A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD40 | 3 | Single | 30 | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 165ns | 25 ns | 21 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 1V | 80W Tc | TO-252AA | 850 mJ | 30V | N-Channel | 1440pF @ 25V | 11m Ω @ 20A, 10V | 1V @ 250μA | 40A Tc | 30nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK9606-40B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk960640b118-datasheets-6847.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | GULL WING | 3 | Single | 203W | 1 | R-PSSO-G2 | 43 ns | 145ns | 92 ns | 132 ns | 129A | 15V | 40V | SILICON | DRAIN | SWITCHING | 203W Tc | 75A | 494 mJ | 40V | N-Channel | 4901pF @ 25V | 5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 44nC @ 5V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||
| TSM015NA03CR RLG | Taiwan Semiconductor Corporation | $4.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm015na03crrlg-datasheets-6859.pdf | 8-PowerTDFN | 15 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 104W Tc | N-Channel | 4243pF @ 15V | 1.5m Ω @ 32A, 10V | 2.5V @ 250μA | 205A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R5-40BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn4r540bs118-datasheets-6874.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 1 | R-PSSO-G2 | 19 ns | 23ns | 9 ns | 30 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 148W Tc | 545A | 0.0045Ohm | 152 mJ | 40V | N-Channel | 2683pF @ 20V | 4.5m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 42.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK969R0-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk969r060e118-datasheets-6851.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 21 ns | 65ns | 46 ns | 32 ns | 75A | 10V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 137W Tc | 0.009Ohm | 86 mJ | N-Channel | 4350pF @ 25V | 8m Ω @ 20A, 10V | 2.1V @ 1mA | 75A Tc | 29.8nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM018NA03CR RLG | Taiwan Semiconductor Corporation | $5.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm018na03crrlg-datasheets-6641.pdf | 8-PowerTDFN | 32 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 104W Tc | N-Channel | 3479pF @ 15V | 1.8m Ω @ 29A, 10V | 2.5V @ 250μA | 185A Tc | 56nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8P60W5,RVQ | Toshiba Semiconductor and Storage | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 8A | 600V | 80W Tc | N-Channel | 590pF @ 300V | 560m Ω @ 4A, 10V | 4.5V @ 400μA | 8A Ta | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9624-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk962455a118-datasheets-6337.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | GULL WING | 3 | Single | 105W | 1 | R-PSSO-G2 | 17.5 ns | 104ns | 80 ns | 82.5 ns | 46A | 10V | 55V | SILICON | DRAIN | SWITCHING | 105W Tc | 0.026Ohm | 76 mJ | 55V | N-Channel | 1815pF @ 25V | 21.7m Ω @ 25A, 10V | 2V @ 1mA | 46A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| STD5NK60ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp5nk60z-datasheets-5866.pdf | 650V | 5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.48mm | 6.2mm | Lead Free | 2 | No SVHC | 1.6Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | DPAK-0068772-C2 | not_compliant | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD5N | 3 | 1 | Single | 30 | 90W | 1 | FET General Purpose Power | Not Qualified | 150°C | R-PSSO-G2 | 16 ns | 25ns | 25 ns | 36 ns | 5A | 30V | 600V | SILICON | SWITCHING | 3V | 90W Tc | TO-252AA | 5A | 20A | 220 mJ | 600V | N-Channel | 690pF @ 25V | 3.75 V | 1.6 Ω @ 2.5A, 10V | 4.5V @ 50μA | 5A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| STD4NK60Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk60zt4-datasheets-6401.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 260 | STD4N | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | 12 ns | 9.5ns | 16.5 ns | 29 ns | 4A | 30V | SILICON | SWITCHING | 70W Tc | 4A | 600V | N-Channel | 510pF @ 25V | 2 Ω @ 2A, 10V | 4.5V @ 50μA | 4A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| TPH5R906NH,L1Q | Toshiba Semiconductor and Storage | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshiba-tph5r906nhl1q-datasheets-0970.pdf | 8-PowerVDFN | 12 Weeks | 8 | 28A | 60V | 1.6W Ta 57W Tc | N-Channel | 3100pF @ 30V | 5.9m Ω @ 14A, 10V | 4V @ 300μA | 28A Ta | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8554 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc8554-datasheets-6769.pdf | 8-PowerWDFN | 3mm | 950μm | 3mm | Lead Free | 8 | 23 Weeks | 165.33333mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | FLAT | Single | 2W | 1 | FET General Purpose Power | 13 ns | 10ns | 7 ns | 32 ns | 16.5A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta 41W Tc | 72A | 36A | 0.005Ohm | 20V | N-Channel | 3380pF @ 10V | 5m Ω @ 16.5A, 10V | 3V @ 250μA | 16.5A Tc | 62nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHD6N62ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n62et1ge3-datasheets-6795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 14 Weeks | 1 | 78W | 150°C | TO-252AA | 12 ns | 22 ns | 6A | 30V | 620V | 78W Tc | 780mOhm | 620V | N-Channel | 578pF @ 100V | 900mOhm @ 3A, 10V | 4V @ 250μA | 6A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM024NA04LCR RLG | Taiwan Semiconductor Corporation | $1.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm024na04lcrrlg-datasheets-6816.pdf | 8-PowerTDFN | 5 | 28 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 125W Tc | 25A | 680A | 0.003Ohm | 346 mJ | N-Channel | 4224pF @ 20V | 2.4m Ω @ 25A, 10V | 2.5V @ 250μA | 170A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM033NA04LCR RLG | Taiwan Semiconductor Corporation | $4.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm033na04lcrrlg-datasheets-6807.pdf | 8-PowerTDFN | 5 | 28 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 125W Tc | 20A | 564A | 0.0044Ohm | 290 mJ | N-Channel | 3130pF @ 20V | 3.3m Ω @ 20A, 10V | 2.5V @ 250μA | 141A Tc | 47nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK768R1-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk768r140e118-datasheets-6165.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 11 ns | 9ns | 9 ns | 21 ns | 75A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 96W Tc | 0.0072Ohm | N-Channel | 1730pF @ 25V | 7.2m Ω @ 20A, 10V | 4V @ 1mA | 75A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7488TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7488trpbf-datasheets-6414.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 14 Weeks | 29MOhm | 8 | EAR99 | No | 2.5W | 1 | 13 ns | 12ns | 16 ns | 44 ns | 6.3A | 20V | 2.5W Ta | 80V | N-Channel | 1680pF @ 25V | 29m Ω @ 3.8A, 10V | 4V @ 250μA | 6.3A Ta | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPSA70R1K4P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipsa70r1k4p7sakma1-datasheets-6696.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 22.7W Tc | 8.2A | N-Channel | 158pF @ 400V | 1.4 Ω @ 700mA, 10V | 3.5V @ 40μA | 4A Tc | 4.7nC @ 400V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSD220N06TL | ROHM Semiconductor | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsd220n06tl-datasheets-6693.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | 3 | No | 22A | 20V | 20W Ta | 60V | N-Channel | 22A Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD30N06S215ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd30n06s215atma2-datasheets-6654.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | yes | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 30A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 120A | 0.0147Ohm | 240 mJ | N-Channel | 1485pF @ 25V | 14.7m Ω @ 30A, 10V | 4V @ 80μA | 30A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4R4P06PL,RQ | Toshiba Semiconductor and Storage | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 60V | 87W Tc | N-Channel | 3280pF @ 30V | 4.4mOhm @ 29A, 10V | 2.5V @ 500μA | 58A Tc | 48.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7611-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk761155a118-datasheets-6722.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 166W | 1 | R-PSSO-G2 | 18 ns | 90ns | 68 ns | 84 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 166W Tc | 55V | N-Channel | 3093pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDD3690 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd3690-datasheets-6547.pdf | 100V | 22A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 260.37mg | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | GULL WING | Single | 60W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 6.5ns | 10 ns | 29 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 60W Tc | 75A | 0.064Ohm | 100V | N-Channel | 1514pF @ 50V | 64m Ω @ 5.4A, 10V | 4V @ 250μA | 22A Tc | 39nC @ 10V | 6V 10V | ±20V |
