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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFH8318TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfh8318trpbf-datasheets-5635.pdf | 8-PowerTDFN | 5 | 12 Weeks | No SVHC | 8 | EAR99 | HIGH RELIABILITY | No | DUAL | FLAT | 3.6W | 1 | FET General Purpose Power | R-PDSO-F5 | 15 ns | 33ns | 12 ns | 18 ns | 27A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 59W Tc | 50A | 400A | 30V | N-Channel | 3180pF @ 10V | 1.8 V | 3.1m Ω @ 20A, 10V | 2.35V @ 50μA | 27A Ta 120A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| RS1E200GNTB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rs1e200gntb-datasheets-5661.pdf | 8-PowerTDFN | Lead Free | 5 | 20 Weeks | 70.590313mg | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | 13.2 ns | 7.2ns | 8.4 ns | 34.7 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3W Ta 25.1W Tc | 30V | N-Channel | 1080pF @ 15V | 4.6m Ω @ 20A, 10V | 2.5V @ 1mA | 20A Ta | 16.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TPH11003NL,LQ | Toshiba Semiconductor and Storage | $2.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 16 Weeks | 850.995985mg | 8 | No | 1 | 8-SOP Advance (5x5) | 660pF | 7.5 ns | 2.1ns | 1.9 ns | 13.5 ns | 32A | 20V | 30V | 1.6W Ta 21W Tc | 12.6mOhm | 30V | N-Channel | 660pF @ 15V | 11mOhm @ 5.5A, 10V | 2.3V @ 100μA | 32A Ta | 7.5nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A08KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a08ktc-datasheets-5546.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | No SVHC | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 2.6 ns | 2.1ns | 4.6 ns | 12.3 ns | 7.9A | 20V | SILICON | DRAIN | SWITCHING | 2.12W Ta | TO-252AA | 0.08Ohm | 60V | N-Channel | 459pF @ 40V | 80m Ω @ 4.8A, 10V | 3V @ 250μA | 5.36A Ta | 5.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK7Y13-40B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nexperiausainc-buk7y1340b115-datasheets-5763.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 12 Weeks | 4.535924g | 4 | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 85W | 1 | 9 ns | 25ns | 27 ns | 35 ns | 58A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85W Tc | 55A | 220A | 40V | N-Channel | 1311pF @ 25V | 13m Ω @ 25A, 10V | 4V @ 1mA | 58A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD4809NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntd4809nt4g-datasheets-5646.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 4 Weeks | 9MOhm | 4 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 4 | Single | 40 | 2W | 1 | FET General Purpose Power | R-PSSO-G2 | 12.3 ns | 22.7ns | 2.8 ns | 25.3 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 1.4W Ta 52W Tc | 9A | 30V | N-Channel | 1456pF @ 12V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9.6A Ta 58A Tc | 25nC @ 11.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TSM036N03PQ56 RLG | Taiwan Semiconductor Corporation | $4.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm036n03pq56rlg-datasheets-5757.pdf | 8-PowerTDFN | 20 Weeks | 30V | 83W Tc | N-Channel | 2530pF @ 15V | 3.6m Ω @ 22A, 10V | 2.5V @ 250μA | 124A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH100N30X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh100n30x3-datasheets-5802.pdf | TO-247-3 | 19 Weeks | 300V | 480W Tc | N-Channel | 7.66nF @ 25V | 13.5m Ω @ 50A, 10V | 4.5V @ 4mA | 100A Tc | 122nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS7N03R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntms7n03r2g-datasheets-5783.pdf | 30V | 7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 29 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | FET General Purpose Power | 71ns | 38 ns | 27 ns | 7mA | 20V | SILICON | SWITCHING | 800mW Ta | 0.023Ohm | 30V | N-Channel | 1190pF @ 25V | 23m Ω @ 7A, 10V | 3V @ 250μA | 4.8A Ta | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TSM045NA03CR RLG | Taiwan Semiconductor Corporation | $9.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm045na03crrlg-datasheets-5768.pdf | 8-PowerTDFN | 5 | 32 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 89W Tc | 18A | 432A | 0.0063Ohm | 104 mJ | N-Channel | 1194pF @ 15V | 4.5m Ω @ 18A, 10V | 2.5V @ 250μA | 108A Tc | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8878 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fdd8878-datasheets-5832.pdf | 30V | 40A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 40W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 79ns | 27 ns | 38 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 40W Tc | TO-252AA | 25 mJ | 30V | N-Channel | 880pF @ 15V | 15m Ω @ 35A, 10V | 2.5V @ 250μA | 11A Ta 40A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TSM080N03EPQ56 RLG | Taiwan Semiconductor Corporation | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm080n03epq56rlg-datasheets-5760.pdf | 8-PowerTDFN | 20 Weeks | 8-PDFN (5x6) | 30V | 54W Tc | N-Channel | 750pF @ 25V | 8mOhm @ 16A, 10V | 2.5V @ 250μA | 55A Tc | 7.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH80N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixth80n65x2-datasheets-5850.pdf | TO-247-3 | 25.66mm | 15 Weeks | EAR99 | IXTH80N65X2 | not_compliant | NOT SPECIFIED | 1 | NOT SPECIFIED | 890W | 150°C | 36 ns | 72 ns | 80A | 30V | 890W Tc | 650V | N-Channel | 7753pF @ 25V | 40m Ω @ 40A, 10V | 4.5V @ 4mA | 80A Tc | 144nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFMA2N028Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdfma2n028z-datasheets-5618.pdf | 20V | 3.7A | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 60mg | No SVHC | 68MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 1.4W | 1 | FET General Purpose Power | 8 ns | 8ns | 8 ns | 14 ns | 3.7A | 12V | SILICON | DRAIN | SWITCHING | 1V | 1.4W Tj | 90 pF | 20V | N-Channel | 455pF @ 10V | 68m Ω @ 3.7A, 4.5V | 1.5V @ 250μA | 3.7A Ta | 6nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| RZQ045P01TR | ROHM Semiconductor | $1.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rzq045p01tr-datasheets-5471.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 26 Weeks | 100MOhm | 6 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 6 | 10 | 1.25W | 1 | Other Transistors | 12 ns | 75ns | 75 ns | 390 ns | 4.5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.25W Ta | 12A | 12V | P-Channel | 2450pF @ 6V | 35m Ω @ 4.5A, 4.5V | 1V @ 1mA | 4.5A Ta | 31nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| NTLUS3A18PZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | µCool™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntlus3a18pztag-datasheets-5438.pdf | 6-UDFN Exposed Pad | 2mm | 500μm | 2mm | Lead Free | 6 | 6 Weeks | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ULTRA LOW RESISTANCE | Tin | No | e3 | YES | DUAL | 6 | Single | 1.7W | 1 | Other Transistors | 8.6 ns | 15ns | 88 ns | 150 ns | 8.2A | 8V | SILICON | DRAIN | SWITCHING | 20V | 700mW Ta | -20V | P-Channel | 2240pF @ 15V | 18m Ω @ 7A, 4.5V | 1V @ 250μA | 5.1A Ta | 28nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| TSM1NB60CP ROG | Taiwan Semiconductor Corporation | $1.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm1nb60cprog-datasheets-5512.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 600V | 39W Tc | N-Channel | 138pF @ 25V | 10 Ω @ 500mA, 10V | 4.5V @ 250μA | 1A Tc | 6.1nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R0-25YLB,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn6r025ylb115-datasheets-5501.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | HIGH RELIABILITY | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 58W | 1 | 16 ns | 17ns | 9 ns | 30 ns | 73A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 58W Tc | MO-235 | 292A | 0.0079Ohm | 15 mJ | 25V | N-Channel | 1099pF @ 12V | 6.1m Ω @ 20A, 10V | 1.95V @ 1mA | 73A Tc | 19.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDMA410NZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdma410nzt-datasheets-5523.pdf | 6-UDFN Exposed Pad | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | Single | NOT SPECIFIED | 20V | 2.4W Ta | N-Channel | 1310pF @ 10V | 23m Ω @ 9.5A, 4.5V | 1V @ 250μA | 9.5A Ta | 14nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS0309AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms0309as-datasheets-5535.pdf | 8-PowerTDFN | 5 | 18 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | not_compliant | e3 | DUAL | FLAT | 260 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 11 ns | 4.5ns | 3.7 ns | 29 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 50W Tc | MO-240AA | 0.0035Ohm | 66 mJ | 30V | N-Channel | 3000pF @ 15V | 3.5m Ω @ 21A, 10V | 3V @ 1mA | 21A Ta 49A Tc | 47nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| PSMN5R4-25YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-psmn5r425yldx-datasheets-5479.pdf | SC-100, SOT-669 | 4 | 12 Weeks | HIGH RELIABILITY | IEC-60134 | SINGLE | GULL WING | 4 | 1 | R-PSSO-G4 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 47W Tc | MO-235 | 280A | 0.00569Ohm | 75.8 mJ | N-Channel | 858pF @ 12V | 5.69m Ω @ 15A, 10V | 2.2V @ 1mA | 70A Tc | 12.4nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N100Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfa4n100q-datasheets-0756.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 3Ohm | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 150W Tc | 4A | 700 mJ | 1kV | N-Channel | 1050pF @ 25V | 3 Ω @ 2A, 10V | 4.5V @ 1.5mA | 4A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP65R110CFDAAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r110cfdafksa1-datasheets-4724.pdf | TO-220-3 | Contains Lead | 3 | 18 Weeks | 3 | no | HIGH RELIABILITY | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 16 ns | 11ns | 6 ns | 68 ns | 31.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 277.8W Tc | TO-220AB | 99.6A | 0.11Ohm | 845 mJ | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TSM9435CS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm9435csrlg-datasheets-5476.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 30V | 5.3W Tc | P-Channel | 551.57pF @ 15V | 60m Ω @ 5.3A, 10V | 3V @ 250μA | 5.3A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0280090J-TR | Cree/Wolfspeed | $5.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SiCFET (Silicon Carbide) | RoHS Compliant | 2015 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 26 Weeks | D2PAK-7 | 900V | 50W Tc | N-Channel | 150pF @ 600V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 11A Tc | 9.5nC @ 15V | 15V | +18V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7277-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk727755a118-datasheets-5487.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | 3 | EAR99 | Tin | No | e3 | GULL WING | 3 | Single | 51W | 1 | R-PSSO-G2 | 10 ns | 50ns | 40 ns | 70 ns | 180mA | 20V | 55V | SILICON | DRAIN | SWITCHING | 51W Tc | 0.077Ohm | 55V | N-Channel | 422pF @ 25V | 77m Ω @ 10A, 10V | 4V @ 1mA | 18A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMN10H099SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn10h099sfg7-datasheets-5603.pdf | 8-PowerVDFN | 1.127nF | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | 1 | 5.4 ns | 5.9ns | 7.3 ns | 20 ns | 4.2A | 20V | 980mW Ta | 100V | N-Channel | 1172pF @ 50V | 80m Ω @ 3.3A, 10V | 3V @ 250μA | 4.2A Ta | 25.2nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM080N03PQ56 RLG | Taiwan Semiconductor Corporation | $1.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm080n03pq56rlg-datasheets-5454.pdf | 8-PowerTDFN | 20 Weeks | 8-PDFN (5x6) | 30V | 69W Tc | N-Channel | 843pF @ 15V | 8mOhm @ 14A, 10V | 2.5V @ 250μA | 73A Tc | 14.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP410N30NAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp410n30naksa1-datasheets-5613.pdf | TO-220-3 | 20.7mm | Contains Lead | 3 | 13 Weeks | yes | Halogen Free | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 300W | 1 | 175°C | R-PSFM-T3 | 16 ns | 43 ns | 44A | 20V | 300V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | TO-220AB | 240 mJ | 300V | N-Channel | 7180pF @ 100V | 41m Ω @ 44A, 10V | 4V @ 270μA | 44A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NVF5P03T3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntf5p03t3g-datasheets-4721.pdf | TO-261-4, TO-261AA | Lead Free | 22 Weeks | 4 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 4 | Single | 3.7A | 20V | 30V | 1.56W Ta | P-Channel | 950pF @ 25V | 100m Ω @ 5.2A, 10V | 3V @ 250μA | 3.7A Ta | 38nC @ 10V | 4.5V 10V | ±20V |
