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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM35N10CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | 260 | 30 | 100V | 83.3W Tc | N-Channel | 1598pF @ 30V | 37m Ω @ 10A, 10V | 3V @ 250μA | 32A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3430DV-T1-GE3 | Vishay Siliconix | $1.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3430dvt1e3-datasheets-4579.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.14W | 1 | FET General Purpose Power | 9 ns | 11ns | 9 ns | 16 ns | 1.8A | 20V | SILICON | 2V | 1.14W Ta | 100V | N-Channel | 2 V | 170m Ω @ 2.4A, 10V | 2V @ 250μA (Min) | 1.8A Ta | 6.6nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STD3NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std3nm60n-datasheets-6038.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | 1.8Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | GULL WING | STD3N | Single | 50W | 1 | R-PSSO-G2 | 6 ns | 9.5ns | 31 ns | 23 ns | 3.3A | 25V | SILICON | DRAIN | SWITCHING | 50W Tc | 86 mJ | 600V | N-Channel | 188pF @ 50V | 1.8 Ω @ 1.65A, 10V | 4V @ 250μA | 3.3A Tc | 9.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| SK8603170L | Panasonic Electronic Components | $3.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | DEPLETION MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-sk8603170l-datasheets-6088.pdf | 8-PowerSMD, Flat Leads | 4.9mm | 950μm | 5.9mm | 5 | 12 Weeks | 8 | EAR99 | unknown | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 24W | 1 | R-PDSO-F5 | 11 ns | 10ns | 7 ns | 48 ns | 59A | 3V | SILICON | DRAIN | SWITCHING | 2.8W Ta 24W Tc | 20A | 30V | N-Channel | 2940pF @ 10V | 4.1m Ω @ 14A, 10V | 3V @ 2.56mA | 20A Ta 59A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7809AVTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7809avtrpbf-datasheets-6129.pdf | 30V | 13.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 9MOhm | 8 | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | 14 ns | 36ns | 10 ns | 96 ns | 13.3A | 12V | 30V | SILICON | SWITCHING | 6.3 mm | 1V | 2.5W Ta | 30V | N-Channel | 3780pF @ 16V | 1 V | 9m Ω @ 15A, 4.5V | 1V @ 250μA | 13.3A Ta | 62nC @ 5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| ES6U1T2R | ROHM Semiconductor | $3.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | SOT-563, SOT-666 | Lead Free | 6 | 10 Weeks | yes | EAR99 | e2 | Tin/Copper (Sn/Cu) | DUAL | FLAT | 260 | 6 | 10 | 1 | Other Transistors | Not Qualified | R-PDSO-F6 | 1.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 700mW Ta | 0.26Ohm | P-Channel | 290pF @ 6V | 260m Ω @ 1.3A, 4.5V | 1V @ 1mA | 1.3A Ta | 2.4nC @ 4.5V | Schottky Diode (Isolated) | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7932TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfh7932trpbf-datasheets-6156.pdf | 8-PowerVDFN | 6.096mm | 939.8μm | 5.1mm | Lead Free | 3 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 3.4W | 1 | FET General Purpose Power | R-PDSO-N3 | 20 ns | 48ns | 20 ns | 23 ns | 24A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 3.4W Ta | 25A | 0.0033Ohm | 30V | N-Channel | 4270pF @ 15V | 1.8 V | 3.3m Ω @ 25A, 10V | 2.35V @ 100μA | 24A Ta 104A Tc | 51nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TSM9409CS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm9409csrlg-datasheets-6013.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 60V | 3W Ta | P-Channel | 540pF @ 30V | 155m Ω @ 3.5A, 10V | 1V @ 250μA | 3.5A Ta | 6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPH3356-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-cph3356tlw-datasheets-5016.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 6 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | Tin | not_compliant | e6 | DUAL | GULL WING | 1 | R-PDSO-G3 | 5.7 ns | 11ns | 20 ns | 34 ns | 2.5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Ta | 0.137Ohm | P-Channel | 250pF @ 10V | 137m Ω @ 1A, 4.5V | 1.4V @ 1mA | 2.5A Ta | 3.3nC @ 4.5V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J216FE,LF | Toshiba Semiconductor and Storage | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | 12V | 700mW Ta | P-Channel | 1040pF @ 12V | 32m Ω @ 3.5A, 4.5V | 1V @ 1mA | 4.8A Ta | 12.7nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9675-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk967555a118-datasheets-6034.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | e3 | YES | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 62W | 1 | Not Qualified | R-PSSO-G2 | 10 ns | 47ns | 33 ns | 28 ns | 20A | 10V | 55V | SILICON | DRAIN | SWITCHING | 62W Tc | 72 mJ | 55V | N-Channel | 643pF @ 25V | 68m Ω @ 10A, 10V | 2V @ 1mA | 20A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK50P04M1(T6RSS-Q) | Toshiba Semiconductor and Storage | $3.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10mm | 2.3mm | 6.1mm | 16 Weeks | 3 | No | Single | 60W | 1 | DP | 2.6nF | 29 ns | 22ns | 10 ns | 77 ns | 50A | 20V | 40V | 60W Tc | 3.8mOhm | N-Channel | 2600pF @ 10V | 8.7mOhm @ 25A, 10V | 2.3V @ 500μA | 50A Ta | 38nC @ 10V | 8.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD5N52K3 | STMicroelectronics | $0.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu5n52k3-datasheets-4415.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 1.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 260 | STD5N | 3 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 11ns | 16 ns | 29 ns | 4.4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.75V | 70W Tc | 525V | N-Channel | 545pF @ 100V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FQD9N25TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqu9n25tu-datasheets-4660.pdf | 250V | 7.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 105ns | 45 ns | 25 ns | 7.4A | 30V | SILICON | DRAIN | SWITCHING | 5V | 2.5W Ta 55W Tc | 29.6A | 0.42Ohm | 250V | N-Channel | 700pF @ 25V | 420m Ω @ 3.7A, 10V | 5V @ 250μA | 7.4A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| TSM070NA04LCR RLG | Taiwan Semiconductor Corporation | $4.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm070na04lcrrlg-datasheets-6041.pdf | 8-PowerTDFN | 5 | 28 Weeks | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 113W Tc | 14A | 364A | 0.0089Ohm | 163 mJ | N-Channel | 1469pF @ 20V | 7m Ω @ 14A, 10V | 2.5V @ 250μA | 91A Tc | 23.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM060N03ECP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 54W Tc | N-Channel | 1210pF @ 25V | 6m Ω @ 20A, 10V | 2.5V @ 250μA | 70A Tc | 11.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5304TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfh5304trpbf-datasheets-5943.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 4.5MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 13 ns | 25ns | 6.6 ns | 12 ns | 79A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 46W Tc | 22A | 320A | 46 mJ | 30V | N-Channel | 2360pF @ 10V | 2.35 V | 4.5m Ω @ 47A, 10V | 2.35V @ 50μA | 22A Ta 79A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTTFS4824NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-nttfs4824ntag-datasheets-5965.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 2 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 8 | 4.1W | 1 | FET General Purpose Powers | S-PDSO-F5 | 13 ns | 38ns | 5.5 ns | 18 ns | 20.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 660mW Ta 46.3W Tc | 69A | 0.0075Ohm | 255 pF | 30V | N-Channel | 2363pF @ 12V | 1.9 V | 5m Ω @ 20A, 10V | 2.5V @ 250μA | 8.3A Ta 69A Tc | 29nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SK8403180L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | DEPLETION MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonic-sk8403180l-datasheets-0824.pdf | 8-PowerSMD, Flat Leads | 3.05mm | 950μm | 3.05mm | 5 | 12 Weeks | 8 | EAR99 | unknown | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | S-PDSO-F5 | 8 ns | 6ns | 6 ns | 39 ns | 39A | 3V | SILICON | DRAIN | SWITCHING | 2W Ta 19W Tc | 12A | 51A | 30V | N-Channel | 1680pF @ 10V | 7.1m Ω @ 8.5A, 10V | 3V @ 1.45mA | 12A Ta 39A Tc | 10nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9215-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk921555a118-datasheets-5961.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 115W | 1 | R-PSSO-G2 | 19 ns | 161ns | 165 ns | 138 ns | 62A | 15V | 55V | SILICON | DRAIN | SWITCHING | 115W Tc | TO-252AA | 55A | 248A | 0.0166Ohm | 211 mJ | 55V | N-Channel | 2916pF @ 25V | 13.6m Ω @ 25A, 10V | 2V @ 1mA | 55A Tc | 48nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| IXFH52N30Q | IXYS | $24.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30q-datasheets-5986.pdf | 300V | 52A | TO-247-3 | Contains Lead | 3 | 8 Weeks | 6g | No SVHC | 60mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 3 | Single | 360W | 1 | FET General Purpose Power | 60ns | 25 ns | 80 ns | 52A | 20V | 300V | SILICON | DRAIN | 4V | 360W Tc | 250 ns | 208A | 300V | N-Channel | 5300pF @ 25V | 4 V | 60m Ω @ 500mA, 10V | 4V @ 4mA | 52A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPZ60R040C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/infineontechnologies-ipz60r040c7xksa1-datasheets-6004.pdf | TO-247-4 | Lead Free | 18 Weeks | yes | EAR99 | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 50A | 600V | 227W Tc | N-Channel | 4340pF @ 400V | 40m Ω @ 24.9A, 10V | 4V @ 1.24mA | 50A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSH065N03TB1 | ROHM Semiconductor | $6.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsh065n03tb1-datasheets-5951.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | 2W | 8-SOP | 430pF | 6.5A | 30V | 2W Ta | 30mOhm | 30V | N-Channel | 430pF @ 10V | 27mOhm @ 6.5A, 10V | 2.5V @ 1mA | 6.5A Ta | 8.6nC @ 5V | 27 mΩ | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS3E095BNGZETB | ROHM Semiconductor | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | yes | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2W Tc | 9.5A | 36A | 0.0219Ohm | 12.9 mJ | N-Channel | 680pF @ 15V | 14.6m Ω @ 9.5A, 10V | 2.5V @ 1mA | 9.5A Ta | 8.3nC @ 4.5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STQ3N45K3-AP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stq3n45k3ap-datasheets-5771.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 4.95mm | 4.95mm | 3.94mm | Lead Free | 3 | No SVHC | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | STQ3 | 3 | Single | 2.5W | 1 | FET General Purpose Power | 600mA | 30V | SILICON | SWITCHING | 3.75V | 3W Tc | 0.6A | 2.4A | 450V | N-Channel | 150pF @ 25V | 3.8 Ω @ 500mA, 10V | 4.5V @ 50μA | 600mA Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPN30008NH,LQ | Toshiba Semiconductor and Storage | $0.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 710pF | 12 Weeks | 8 | Single | 27W | 3.8ns | 3.6 ns | 14 ns | 9.6A | 20V | 700mW Ta 27W Tc | 80V | N-Channel | 920pF @ 40V | 30m Ω @ 4.8A, 10V | 4V @ 100μA | 9.6A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RW1E025RPT2CR | ROHM Semiconductor | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | SOT-563, SOT-666 | Lead Free | 6 | 10 Weeks | yes | EAR99 | e2 | TIN COPPER | DUAL | FLAT | 260 | 6 | 10 | 1 | Other Transistors | Not Qualified | R-PDSO-F6 | 2.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 700mW Ta | 0.075Ohm | P-Channel | 480pF @ 10V | 75m Ω @ 2.5A, 10V | 2.5V @ 1mA | 2.5A Ta | 5.2nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6226-75C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk622675c118-datasheets-5900.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 80W | 1 | R-PSSO-G2 | 11.8 ns | 15.6ns | 31 ns | 59 ns | 33A | 16V | 75V | SILICON | DRAIN | SWITCHING | 80W Tc | 0.04Ohm | 42 mJ | 75V | N-Channel | 2000pF @ 25V | 29m Ω @ 12A, 10V | 2.8V @ 1mA | 33A Tc | 34nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDD8882 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdd8882-datasheets-5918.pdf | 30V | 55A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 55W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 82ns | 25 ns | 40 ns | 55A | 20V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-252AA | 30V | N-Channel | 1260pF @ 15V | 11.5m Ω @ 35A, 10V | 2.5V @ 250μA | 12.6A Ta 55A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| ZXMN6A08KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a08ktc-datasheets-5546.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | No SVHC | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 2.6 ns | 2.1ns | 4.6 ns | 12.3 ns | 7.9A | 20V | SILICON | DRAIN | SWITCHING | 2.12W Ta | TO-252AA | 0.08Ohm | 60V | N-Channel | 459pF @ 40V | 80m Ω @ 4.8A, 10V | 3V @ 250μA | 5.36A Ta | 5.8nC @ 10V | 4.5V 10V | ±20V |
