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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM600P03CS RLG | Taiwan Semiconductor Corporation | $2.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm600p03csrlg-datasheets-5082.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8-SOP | 30V | 2.1W Tc | P-Channel | 560pF @ 15V | 60mOhm @ 3A, 10V | 2.5V @ 250μA | 4.7A Tc | 9.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS5U17TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 30V | 2A | SOT-23-5 Thin, TSOT-23-5 | Lead Free | 5 | 20 Weeks | 5 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 5 | Single | 10 | 1.25W | 1 | FET General Purpose Powers | 8 ns | 10ns | 10 ns | 21 ns | 2A | 12V | SILICON | SWITCHING | 1.5V | 900mW Ta | 2A | 30V | N-Channel | 175pF @ 10V | 100m Ω @ 2A, 4.5V | 1.5V @ 1mA | 2A Ta | 3.9nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| PMCM6501UPEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/nexperiausainc-pmcm6501upez-datasheets-5287.pdf | 4-XFBGA, WLCSP | 13 Weeks | 20V | 556mW | 22mOhm | P-Channel | 19.1nC @ 4.5V | 2.5V 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRL025P03TR | ROHM Semiconductor | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rrl025p03tr-datasheets-5299.pdf | 6-SMD, Flat Leads | 6 | 20 Weeks | 6 | yes | EAR99 | No | e2 | TIN COPPER | DUAL | 260 | 6 | Single | 10 | 1W | 1 | Other Transistors | 7 ns | 16ns | 33 ns | 50 ns | 2.5A | 20V | SILICON | SWITCHING | 30V | 320mW Ta | 0.075Ohm | -30V | P-Channel | 480pF @ 10V | 75m Ω @ 2.5A, 10V | 2.5V @ 1mA | 2.5A Ta | 5.2nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM240N03CX6 RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | SOT-23-6 | 6 | 28 Weeks | EAR99 | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.56W Tc | 6.5A | 26A | 0.024Ohm | 32 mJ | N-Channel | 345pF @ 25V | 24m Ω @ 6A, 10V | 2.5V @ 250μA | 6.5A Tc | 4.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS6U24TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | -30V | -1A | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 20 Weeks | 6 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 6 | Single | 10 | 900mW | 1 | Other Transistors | 9 ns | 7ns | 7 ns | 18 ns | 1A | 20V | SILICON | SWITCHING | 30V | 1.25W Ta | 1A | 0.4Ohm | -30V | P-Channel | 90pF @ 10V | 400m Ω @ 1A, 10V | 2.5V @ 1mA | 1A Ta | 1.7nC @ 5V | Schottky Diode (Isolated) | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| RT1A045APTCR | ROHM Semiconductor | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rt1a045aptcr-datasheets-5354.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | EAR99 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F8 | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 650mW Ta | 0.03Ohm | P-Channel | 4200pF @ 6V | 30m Ω @ 4.5A, 4.5V | 1V @ 1mA | 4.5A Ta | 40nC @ 4.5V | 1.5V 4.5V | -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| US5U3TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-us5u3tr-datasheets-5346.pdf | 6-SMD (5 Leads), Flat Lead | Lead Free | 5 | 12 Weeks | No SVHC | 5 | yes | EAR99 | No | e2 | TIN COPPER | DUAL | 260 | 5 | Single | 10 | 1W | 1 | FET General Purpose Power | 7 ns | 9ns | 6 ns | 15 ns | 1.5A | 12V | 30V | SILICON | SWITCHING | 1.5V | 1W Ta | 0.34Ohm | 30V | N-Channel | 80pF @ 10V | 1.5 V | 240m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 1.5A Ta | 2.2nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | |||||||||||||||||||||||||||||||||||||||||
| IXTH6N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixth6n100d2-datasheets-5417.pdf | TO-247-3 | 3 | 24 Weeks | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 300W Tc | TO-247AD | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 6A Tc | 95nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD25485F5T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-SMD, No Lead | 1.49mm | 730μm | Lead Free | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 5 days ago) | yes | 338μm | YES | BOTTOM | 260 | CSD25485 | Single | NOT SPECIFIED | 1 | SILICON | SWITCHING | 20V | 20V | 1.4W Ta | 0.07Ohm | P-Channel | 533pF @ 10V | 35m Ω @ 900mA, 8V | 1.3V @ 250μA | 5.3A Ta | 3.5nC @ 4.5V | 1.8V 8V | -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF19NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw19nm50n-datasheets-1928.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 250MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF19 | 3 | Single | 30W | 1 | FET General Purpose Power | 12 ns | 16ns | 17 ns | 61 ns | 14A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 56A | 208 mJ | 500V | N-Channel | 1000pF @ 50V | 250m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 34nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| TSM4436CS RLG | Taiwan Semiconductor Corporation | $5.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4436csrlg-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8-SOP | 60V | 2.5W Ta | N-Channel | 1100pF @ 30V | 36mOhm @ 4.6A, 10V | 3V @ 250μA | 8A Ta | 10.5nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3009LFVW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Wettable Flank | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmn3009lfvw7-datasheets-5433.pdf | 8-PowerVDFN | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1W Ta | N-Channel | 2000pF @ 15V | 5m Ω @ 30A, 10V | 2.5V @ 250μA | 60A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM180N03CS RLG | Taiwan Semiconductor Corporation | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm180n03csrlg-datasheets-5173.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 30V | 2.5W Tc | N-Channel | 345pF @ 25V | 18m Ω @ 8A, 10V | 2V @ 250μA | 9A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J502NU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 16 Weeks | 6 | yes | 1W | 6A | 8V | 20V | 1W Ta | -20V | P-Channel | 1800pF @ 10V | 23.1m Ω @ 4A, 4.5V | 1V @ 1mA | 6A Ta | 24.8nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10090BLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt10090bllg-datasheets-5246.pdf | 1kV | 12A | TO-247-3 | Lead Free | 3 | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 298W | 1 | Not Qualified | R-PSFM-T3 | 9 ns | 5ns | 4 ns | 23 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 298W Tc | TO-247AD | 48A | 0.9Ohm | N-Channel | 1969pF @ 25V | 950m Ω @ 6A, 10V | 5V @ 1mA | 12A Tc | 71nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| PMCM4402UPEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/nexperiausainc-pmcm4402upez-datasheets-5011.pdf | 4-XFBGA, WLCSP | 13 Weeks | 20V | 400mW | 65mOhm | P-Channel | 6.2nC @ 4.5V | 2.5V 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTR4501NST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | TO-236-3, SC-59, SOT-23-3 | 2 Weeks | 1.437803g | EAR99 | e3 | Tin (Sn) | 1.25W | 1 | Single | 6.5 ns | 12ns | 3 ns | 12 ns | 3.2A | 12V | 20V | 70mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB23XNEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmpb23xnez-datasheets-5048.pdf | 6-UDFN Exposed Pad | 8 Weeks | 6-DFN2020MD (2x2) | 20V | 1.7W Ta | N-Channel | 1136pF @ 10V | 22mOhm @ 7A, 4.5V | 900mV @ 250μA | 7A Ta | 17nC @ 10V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RTL035N03FRATR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-SMD, Flat Leads | 6 | 16 Weeks | EAR99 | not_compliant | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1W Ta | 3.5A | 0.079Ohm | N-Channel | 350pF @ 10V | 56m Ω @ 3.5A, 4.5V | 1.5V @ 1mA | 3.5A Ta | 6.4nC @ 4.5V | 2.5V 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMFPB8032XP,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmfpb8032xp115-datasheets-5072.pdf | 6-UDFN Exposed Pad | Lead Free | 8 Weeks | 6 | e3 | Tin (Sn) | NOT SPECIFIED | 6 | 1 | Single | NOT SPECIFIED | 6 ns | 14ns | 50 ns | 120 ns | 2.7A | -600mV | -20V | 20V | 485mW Ta 6.25W Tc | -20V | P-Channel | 550pF @ 10V | 102m Ω @ 2.7A, 4.5V | 1V @ 250μA | 2.7A Ta | 8.6nC @ 4.5V | Schottky Diode (Isolated) | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM3446CX6 RFG | Taiwan Semiconductor Corporation | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm3446cx6rfg-datasheets-5069.pdf | SOT-23-6 | 20 Weeks | 20V | 2W Ta | N-Channel | 700pF @ 10V | 33m Ω @ 5.3A, 4.5V | 1V @ 250μA | 5.3A Tc | 8.8nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP1100UCB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmp1100ucb47-datasheets-5091.pdf | 4-UFBGA, WLBGA | 23 Weeks | 4 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 2.5A | 12V | 670mW Ta | P-Channel | 820pF @ 6V | 83m Ω @ 3A, 4.5V | 800mV @ 250μA | 2.5A Ta | 14nC @ 4.5V | 1.3V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R041C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r041c6fksa1-datasheets-5122.pdf | TO-247-3 | 3 | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 481W Tc | 272A | 0.041Ohm | 1954 mJ | N-Channel | 6530pF @ 10V | 41m Ω @ 44.4A, 10V | 3.5V @ 2.96mA | 77.5A Tc | 290nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW57N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb57n65m5-datasheets-5392.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 17 Weeks | 63mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STW57N | Single | 250W | 1 | 73 ns | 15ns | 19 ns | 12 ns | 42A | 25V | 250W Tc | 650V | N-Channel | 4200pF @ 100V | 63m Ω @ 21A, 10V | 5V @ 250μA | 42A Tc | 98nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E150GNTB | ROHM Semiconductor | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq3e150gntb-datasheets-5109.pdf | 8-PowerVDFN | Lead Free | 5 | 20 Weeks | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | 11.6 ns | 5.8ns | 7.8 ns | 34.4 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2W Ta 17.2W Tc | 60A | N-Channel | 850pF @ 15V | 6.1m Ω @ 15A, 10V | 2.5V @ 1mA | 15A Ta | 15.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB17N50LPBF | Vishay Siliconix | $3.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb17n50lpbf-datasheets-5152.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 220W | 1 | TO-220AB | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 5V | 220W Tc | 250 ns | 320mOhm | N-Channel | 2760pF @ 25V | 5 V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFT150N30X3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n30x3-datasheets-2094.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 300V | 890W Tc | N-Channel | 13.1nF @ 25V | 8.3m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 254nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RTL020P02FRATR | ROHM Semiconductor | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-SMD, Flat Leads | 6 | 16 Weeks | Unknown | 6 | EAR99 | not_compliant | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | -2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | -2V | 1W Ta | 2A | 0.15Ohm | P-Channel | 430pF @ 10V | 135m Ω @ 2A, 4.5V | 2V @ 1mA | 2A Ta | 4.9nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD13302W |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 4-UFBGA, DSBGA | 0m | 625μm | 0m | Lead Free | 4 | 6 Weeks | 4 | ACTIVE (Last Updated: 6 days ago) | yes | 650μm | EAR99 | ULTRA LOW RESISTANCE | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD13302 | Single | 1 | 6 ns | 7ns | 7 ns | 17 ns | 1.6A | 10V | SILICON | SWITCHING | 12V | 12V | 1.8W Ta | 29A | 0.0285Ohm | 196 pF | N-Channel | 862pF @ 6V | 17.1m Ω @ 1A, 4.5V | 1.3V @ 250μA | 1.6A Ta | 7.8nC @ 4.5V | 2.5V 4.5V | ±10V |
